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1. 发明申请

US20050151132A1 Semiconductor device and method of manufacturing the same 审中-公开
公开(公告)号：US20050151132A1
公开(公告)日：2005-07-14
申请号：US11048893
申请日：2005-02-03
申请人： Misako Nakazawa , Mitsuhiro Ichijo , Toshiji Hamatani , Hideto Ohnuma , Naoki Makita
发明人： Misako Nakazawa , Mitsuhiro Ichijo , Toshiji Hamatani , Hideto Ohnuma , Naoki Makita
IPC分类号： H01L21/20 , H01L21/322 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/423 , H01L29/49 , H01L29/786 , H01L29/04 , C30B1/00 , H01L21/00 , H01L21/36 , H01L29/10 , H01L29/12 , H01L31/036
CPC分类号： H01L29/4908 , H01L27/12 , H01L27/1277 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/78621
摘要： A barrier layer that meets three requirements, “withstand well against etching and protect a semiconductor film from an etchant as an etching stopper”, “allow impurities to move in itself during heat treatment for gettering”, and “have excellent reproducibility”, is formed and used to getter impurities contained in a semiconductor film. The barrier layer is a silicon oxide film and the ratio of a sub-oxide contained in the barrier layer is 18% or higher.

2. 发明授权

US06734050B2 Method of manufacturing a crystalline semiconductor film 失效
标题翻译：晶体半导体膜的制造方法
公开(公告)号：US06734050B2
公开(公告)日：2004-05-11
申请号：US10229385
申请日：2002-08-28
申请人： Misako Nakazawa , Toshiji Hamatani , Naoki Makita
发明人： Misako Nakazawa , Toshiji Hamatani , Naoki Makita
IPC分类号： H01L2184
CPC分类号： H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1296 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a problem in that uniformity in the amount of added catalyst element within a substrate is poor. The non-uniformity in the amount of added catalyst element within the substrate is thought to influence fluctuation in crystallinity of a crystalline semiconductor film that has undergone thermal crystallization, and exert a bad influence on the electrical characteristics of TFTs finally structured by the crystalline semiconductor film. The present invention solves this problem with the aforementioned conventional technique. If the spin rotational acceleration speed is set low during a period moving from a dripping of the catalyst element solution process to a high velocity spin drying process in a catalyst element spin addition step, then it becomes clear that the non-uniformity of the amount of added catalyst element within the substrate is improved. The above stated problems are therefore solved by applying a spin addition process with a low spin rotational acceleration to a method of manufacturing a crystalline semiconductor film.
摘要翻译：催化剂元素的自旋加成方法是简单且非常重要的技术，因为通过控制催化剂元素溶液中的催化剂元素浓度可以容易地添加结晶所需的催化剂元素的最小量，但是存在以下问题：底物内添加的催化剂元素的量差。认为衬底内添加的催化剂元素的量的不均匀性会影响已经经过热结晶的结晶半导体膜的结晶度的波动，并且对最终由结晶半导体膜构成的TFT的电特性产生不良影响。本发明通过上述传统技术解决了这个问题。如果在催化剂元素自由添加步骤中从催化剂元素溶液处理的滴落到高速纺丝干燥过程的时间段内将旋转旋转加速度设定为低，则显而易见的是，衬底内添加的催化剂元素得到改善。因此，通过对制造结晶半导体膜的方法应用具有低自旋旋转加速度的自旋加成工艺来解决上述问题。

3. 发明授权

US07960296B2 Crystalline semiconductor film, method of manufacturing the same, and semiconductor device 失效
标题翻译：结晶半导体膜及其制造方法以及半导体装置
公开(公告)号：US07960296B2
公开(公告)日：2011-06-14
申请号：US12269274
申请日：2008-11-12
申请人： Misako Nakazawa , Toshiji Hamatani , Naoki Makita
发明人： Misako Nakazawa , Toshiji Hamatani , Naoki Makita
IPC分类号： H01L21/00
CPC分类号： H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1296 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a problem in that uniformity in the amount of added catalyst element within a substrate is poor. The non-uniformity in the amount of added catalyst element within the substrate is thought to influence fluctuation in crystallinity of a crystalline semiconductor film that has undergone thermal crystallization, and exert a bad influence on the electrical characteristics of TFTs finally structured by the crystalline semiconductor film. The present invention solves this problem with the aforementioned conventional technique. If the spin rotational acceleration speed is set low during a period moving from a dripping of the catalyst element solution process to a high velocity spin drying process in a catalyst element spin addition step, then it becomes clear that the non-uniformity of the amount of added catalyst element within the substrate is improved. The above stated problems are therefore solved by applying a spin addition process with a low spin rotational acceleration to a method of manufacturing a crystalline semiconductor film.
摘要翻译：催化剂元素的自旋加成方法是简单且非常重要的技术，因为通过控制催化剂元素溶液中的催化剂元素浓度可以容易地添加结晶所需的催化剂元素的最小量，但是存在以下问题：底物内添加的催化剂元素的量差。认为衬底内添加的催化剂元素的量的不均匀性会影响已经经过热结晶的结晶半导体膜的结晶度的波动，并且对最终由结晶半导体膜构成的TFT的电特性产生不良影响。本发明通过上述传统技术解决了这个问题。如果在催化剂元素自由添加步骤中从催化剂元素溶液处理的滴落到高速纺丝干燥过程的时间段内将旋转旋转加速度设定为低，则显而易见的是，衬底内添加的催化剂元素得到改善。因此，通过对制造结晶半导体膜的方法应用具有低自旋旋转加速度的自旋加成工艺来解决上述问题。

4. 发明授权

US07452791B2 Crystalline semiconductor film, method of manufacturing the same, and semiconductor device 失效
标题翻译：结晶半导体膜及其制造方法以及半导体装置
公开(公告)号：US07452791B2
公开(公告)日：2008-11-18
申请号：US11240467
申请日：2005-10-03
申请人： Misako Nakazawa , Toshiji Hamatani , Naoki Makita
发明人： Misako Nakazawa , Toshiji Hamatani , Naoki Makita
IPC分类号： H01L21/20
CPC分类号： H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1296 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a problem in that uniformity in the amount of added catalyst element within a substrate is poor. The non-uniformity in the amount of added catalyst element within the substrate is thought to influence fluctuation in crystallinity of a crystalline semiconductor film that has undergone thermal crystallization, and exert a bad influence on the electrical characteristics of TFTs finally structured by the crystalline semiconductor film. The present invention solves this problem with the aforementioned conventional technique. If the spin rotational acceleration speed is set low during a period moving from a dripping of the catalyst element solution process to a high velocity spin drying process in a catalyst element spin addition step, then it becomes clear that the non-uniformity of the amount of added catalyst element within the substrate is improved. The above stated problems are therefore solved by applying a spin addition process with a low spin rotational acceleration to a method of manufacturing a crystalline semiconductor film.
摘要翻译：催化剂元素的自旋加成方法是简单且非常重要的技术，因为通过控制催化剂元素溶液中的催化剂元素浓度可以容易地添加结晶所需的催化剂元素的最小量，但是存在以下问题：底物内添加的催化剂元素的量差。认为衬底内添加的催化剂元素的量的不均匀性会影响已经经过热结晶的结晶半导体膜的结晶度的波动，并且对最终由结晶半导体膜构成的TFT的电特性产生不良影响。本发明通过上述传统技术解决了这个问题。如果在催化剂元素自由添加步骤中从催化剂元素溶液处理的滴落到高速纺丝干燥过程的时间段内将旋转旋转加速度设定为低，则显而易见的是，衬底内添加的催化剂元素得到改善。因此，通过对制造结晶半导体膜的方法应用具有低自旋旋转加速度的自旋加成工艺来解决上述问题。

5. 发明授权

US06987036B2 Method for forming crystalline semiconductor film and apparatus for forming the same 有权
公开(公告)号：US06987036B2
公开(公告)日：2006-01-17
申请号：US10209243
申请日：2002-08-01
申请人： Toshiji Hamatani , Misako Nakazawa , Naoki Makita
发明人： Toshiji Hamatani , Misako Nakazawa , Naoki Makita
IPC分类号： H01L21/84
CPC分类号： H01L21/02672 , C30B1/023 , C30B29/06 , H01L21/02532 , H01L21/2022
摘要： The invention is directed to a countermeasure against a local amorphous region observed as an eddy pattern on a thermally crystallized crystalline silicon film. The local amorphous region is thought to result from a deficiently formed ultra-thin silicon oxide film by ozone water treatment, which causes a local phenomenon of repelling a catalyst element solution during spin coating. This inhibits a uniform addition of a catalyst element. A relationship between an ozone concentration of ozone water and a wait time between the ozone water treatment and the subsequent step of adding the catalyst element is deduced and used for planning the countermeasure against the local amorphous region.

6. 发明授权

US06951802B2 Crystalline semiconductor film, method of manufacturing the same, and semiconductor device 失效
标题翻译：结晶半导体膜及其制造方法以及半导体装置
公开(公告)号：US06951802B2
公开(公告)日：2005-10-04
申请号：US10822820
申请日：2004-04-13
申请人： Misako Nakazawa , Toshiji Hamatani , Naoki Makita
发明人： Misako Nakazawa , Toshiji Hamatani , Naoki Makita
IPC分类号： H01L27/08 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L21/36
CPC分类号： H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1296 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a problem in that uniformity in the amount of added catalyst element within a substrate is poor. The non-uniformity in the amount of added catalyst element within the substrate is thought to influence fluctuation in crystallinity of a crystalline semiconductor film that has undergone thermal crystallization, and exert a bad influence on the electrical characteristics of TFTs finally structured by the crystalline semiconductor film. The present invention solves this problem with the aforementioned conventional technique. If the spin rotational acceleration speed is set low during a period moving from a dripping of the catalyst element solution process to a high velocity spin drying process in a catalyst element spin addition step, then it becomes clear that the non-uniformity of the amount of added catalyst element within the substrate is improved. The above stated problems are therefore solved by applying a spin addition process with a low spin rotational acceleration to a method of manufacturing a crystalline semiconductor film.
摘要翻译：催化剂元素的自旋加成方法是简单且非常重要的技术，因为通过控制催化剂元素溶液中的催化剂元素浓度可以容易地添加结晶所需的催化剂元素的最小量，但是存在以下问题：底物内添加的催化剂元素的量差。认为衬底内添加的催化剂元素的量的不均匀性会影响已经经过热结晶的结晶半导体膜的结晶度的波动，并且对最终由结晶半导体膜构成的TFT的电特性产生不良影响。本发明通过上述传统技术解决了这个问题。如果在催化剂元素自由添加步骤中从催化剂元素溶液处理的滴落到高速纺丝干燥过程的时间段内将旋转旋转加速度设定为低，则显而易见的是，衬底内添加的催化剂元素得到改善。因此，通过对制造结晶半导体膜的方法应用具有低自旋旋转加速度的自旋加成工艺来解决上述问题。

7. 发明授权

US06867077B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06867077B2
公开(公告)日：2005-03-15
申请号：US10400418
申请日：2003-03-28
申请人： Misako Nakazawa , Mitsuhiro Ichijo , Toshiji Hamatani , Hideto Ohnuma , Naoki Makita
发明人： Misako Nakazawa , Mitsuhiro Ichijo , Toshiji Hamatani , Hideto Ohnuma , Naoki Makita
IPC分类号： H01L21/20 , H01L21/322 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/423 , H01L29/49 , H01L29/786 , H01L21/00
CPC分类号： H01L29/4908 , H01L27/12 , H01L27/1277 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/78621
摘要： A barrier layer that meets three requirements, “withstand well against etching and protect a semiconductor film from an etchant as an etching stopper”, “allow impurities to move in itself during heat treatment for gettering”, and “have excellent reproducibility”, is formed and used to getter impurities contained in a semiconductor film. The barrier layer is a silicon oxide film and the ratio of a sub-oxide contained in the barrier layer is 18% or higher.
摘要翻译：满足三个要求的“阻挡蚀刻并保护半导体膜免受蚀刻剂作为蚀刻停止剂”的阻挡层，“允许杂质在用于吸气的热处理中自身移动”，形成“具有优异的再现性” 并且用于吸收包含在半导体膜中的杂质。阻挡层是氧化硅膜，阻挡层中含有的副氧化物的比例为18％以上。

8. 发明申请

US20060024925A1 Crystalline semiconductor film, method of manufacturing the same, and semiconductor device 失效
公开(公告)号：US20060024925A1
公开(公告)日：2006-02-02
申请号：US11240467
申请日：2005-10-03
申请人： Misako Nakazawa , Toshiji Hamatani , Naoki Makita
发明人： Misako Nakazawa , Toshiji Hamatani , Naoki Makita
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1296 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a problem in that uniformity in the amount of added catalyst element within a substrate is poor. The non-uniformity in the amount of added catalyst element within the substrate is thought to influence fluctuation in crystallinity of a crystalline semiconductor film that has undergone thermal crystallization, and exert a bad influence on the electrical characteristics of TFTs finally structured by the crystalline semiconductor film. The present invention solves this problem with the aforementioned conventional technique. If the spin rotational acceleration speed is set low during a period moving from a dripping of the catalyst element solution process to a high velocity spin drying process in a catalyst element spin addition step, then it becomes clear that the non-uniformity of the amount of added catalyst element within the substrate is improved. The above stated problems are therefore solved by applying a spin addition process with a low spin rotational acceleration to a method of manufacturing a crystalline semiconductor film.

9. 发明授权

US07821008B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07821008B2
公开(公告)日：2010-10-26
申请号：US11784965
申请日：2007-04-10
申请人： Misako Nakazawa , Naoki Makita
发明人： Misako Nakazawa , Naoki Makita
IPC分类号： H01L29/00 , H01L21/322
CPC分类号： H01L27/12 , H01L27/1277 , H01L29/42384 , H01L29/4908
摘要： A catalytic element is added to an amorphous semiconductor film and heat treatment is conducted therefor to produce a crystalline semiconductor film with good quality, a TFT (semiconductor device) with a satisfactory characteristic is realized using the crystalline semiconductor film. A semiconductor layer includes a region containing an impurity element which has a concentration of 1×1019/cm3 to 1×1021/cm3 and belongs to group 15 of the periodic table and an impurity element which has a concentration of 1.5×1019/cm3 to 3×1021/cm3 and belongs to group 13 of the periodic table, and the region is a region to which a catalytic element left in the semiconductor film (particularly, the channel forming region) moves.
摘要翻译：将催化元素添加到非晶半导体膜中，并进行热处理以产生质量好的结晶半导体膜，使用晶体半导体膜实现具有令人满意的特性的TFT（半导体器件）。半导体层包括含有浓度为1×1019 / cm3至1×1021 / cm3并属于周期表第15族的杂质元素的区域和浓度为1.5×1019 / cm3至 3×1021 / cm3，属于周期表的第13族，该区域是留在半导体膜（特别是沟道形成区域）中的催化元素移动的区域。

10. 发明申请

US20070241404A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070241404A1
公开(公告)日：2007-10-18
申请号：US11784965
申请日：2007-04-10
申请人： Misako Nakazawa , Naoki Makita
发明人： Misako Nakazawa , Naoki Makita
IPC分类号： H01L27/092
CPC分类号： H01L27/12 , H01L27/1277 , H01L29/42384 , H01L29/4908
摘要： A catalytic element is added to an amorphous semiconductor film and heat treatment is conducted therefor to produce a crystalline semiconductor film with good quality, a TFT (semiconductor device) with a satisfactory characteristic is realized using the crystalline semiconductor film. A semiconductor layer includes a region containing an impurity element which has a concentration of 1×1019/cm3 to 1×1021/cm3 and belongs to group 15 of the periodic table and an impurity element which has a concentration of 1.5×1019/cm3 to 3×1021/cm3 and belongs to group 13 of the periodic table, and the region is a region to which a catalytic element left in the semiconductor film (particularly, the channel forming region) moves.
摘要翻译：将催化元素添加到非晶半导体膜中，并进行热处理以产生质量好的结晶半导体膜，使用晶体半导体膜实现具有令人满意的特性的TFT（半导体器件）。半导体层包括含有浓度为1×10 19 / cm 3至1×10 12 / cm 3的杂质元素的区域属于周期表第15组，杂质元素浓度为1.5×10 9 / cm 3至3×10 21 / SUP> / cm 3，属于周期表第13族，区域是留在半导体膜（特别是沟道形成区）中的催化元素移动的区域。

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