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1. 发明申请

US20080038462A1 Method of forming a carbon layer on a substrate 审中-公开
标题翻译：在基材上形成碳层的方法
公开(公告)号：US20080038462A1
公开(公告)日：2008-02-14
申请号：US11501244
申请日：2006-08-09
申请人： Mirko Vogt , Hans-Peter Sperlich , Sven Frauenstein , Andre Neubauer
发明人： Mirko Vogt , Hans-Peter Sperlich , Sven Frauenstein , Andre Neubauer
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： C23C16/26 , C23C16/045
摘要： The present invention relates to a method of forming a carbon layer on a substrate. A substrate with a structured surface is provided, the structured surface comprising a sidewall. A plasma is formed from an atmosphere comprising a gaseous hydrocarbon compound. The substrate is processed with the plasma, thereby depositing a carbon layer on the structured surface of the substrate. According to one aspect of the invention, the gaseous hydrocarbon compound comprises a ratio of less than 2:1 between hydrogen and carbon. According to another aspect of the invention, the atmosphere comprises a gaseous additive compound, the gaseous additive compound having an affinity for binding to hydrogen. Accordingly, the plasma comprises a reduced reactive hydrogen content, thus enabling an improved carbon deposition at the sidewall of the structured surface.
摘要翻译：本发明涉及在基材上形成碳层的方法。提供具有结构化表面的基底，所述结构化表面包括侧壁。由包含气态烃化合物的气氛形成等离子体。用等离子体处理衬底，从而在衬底的结构化表面上沉积碳层。根据本发明的一个方面，气态烃化合物在氢和碳之间的比例小于2:1。根据本发明的另一方面，气氛包括气态添加剂化合物，气态添加剂化合物具有与氢结合的亲和力。因此，等离子体包括降低的反应性氢含量，因此能够在结构化表面的侧壁处改善碳沉积。

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