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    • 1. 发明申请
    • VACUUM PROCESSING APPARATUS
    • 真空加工设备
    • US20090214399A1
    • 2009-08-27
    • US12041029
    • 2008-03-03
    • Minoru YatomiAkitaka MakinoShingo Kimura
    • Minoru YatomiAkitaka MakinoShingo Kimura
    • B01J19/08
    • H01L21/67196H01L21/67201
    • The invention provides a vacuum processing apparatus for processing a sample placed within a processing chamber in a vacuum reactor using plasma generated within the processing chamber, the apparatus comprising an atmospheric transfer chamber disposed on a front portion of the apparatus for transferring the sample under atmospheric pressure, a vacuum transfer chamber arranged on a rear side of the atmospheric transfer chamber for transferring the sample in the inner side of the chamber being vacuumed, a lock chamber disposed between and connecting the vacuum transfer chamber and the atmospheric transfer chamber, a plurality of vacuum processing units including vacuum reactors and arranged in the circumference of and connected to the vacuum transfer chamber, and a plurality of flow controllers arranged in a space below the vacuum transfer chamber or the lock chamber for controlling flow rates of a plurality of gases for processing the sample to be supplied respectively to the vacuum processing units.
    • 本发明提供了一种真空处理装置,用于处理放置在真空反应器内的处理室内的样品的真空处理装置,该样品器使用处理室内产生的等离子体,该装置包括设置在装置前部的大气传送室,用于在大气压下传送样品 ,设置在大气传送室的后侧的真空传送室,用于将被抽吸的室的内侧的样品转移;设置在真空传送室和大气传送室之间并连接真空传送室和大气传送室的锁定室,多个真空 包括真空反应器的处理单元并布置在真空传送室的周边并连接到真空传送室,以及多个流量控制器,其布置在真空传送室或锁定室下方的空间中,用于控制用于处理的多个气体的流速 样品分别提供给真空专业人员 排污单位。
    • 2. 发明申请
    • VACUUM PROCESSING APPARATUS
    • 真空加工设备
    • US20090324367A1
    • 2009-12-31
    • US12203168
    • 2008-09-03
    • Masakazu IsozakiAkitaka MakinoShingo KimuraMinoru Yatomi
    • Masakazu IsozakiAkitaka MakinoShingo KimuraMinoru Yatomi
    • H01L21/677
    • H01L21/6719H01L21/67017H01L21/67196
    • A vacuum processing apparatus includes vacuum processing vessels each having a processing chamber with a pressure-reduced interior space, a vacuum transfer vessel which is coupled to the vacuum vessels disposed therearound and which has a low-pressure interior space in which a to-be-processed workpiece is conveyed, an atmospheric air transfer vessel which is coupled to the front side of the vacuum transfer vessel and which includes on its front face side cassette tables mounting thereon a cassette with the workpiece received therein for conveying the workpiece in an interior space under an atmospheric pressure, a position-aligning machine disposed within the atmospheric air transfer vessel at one of right and left ends for adjusting a position of the workpiece, and an adjuster disposed between lower part of this machine and a floor face for adjusting the supply of a fluid being fed to the vacuum processing vessels.
    • 真空处理装置包括各自具有具有减压内部空间的处理室的真空处理容器,耦合到设置在其周围的真空容器并具有低压内部空间的真空转移容器, 被输送的处理过的工件;大气转移容器,其连接到真空传送容器的前侧,并且其前表面上包括安装在其上的工作台,其中工件被接收在其中,用于将工件传送到内部空间中 大气压力的位置调整机构,位于左右两端的大气输送容器内,用于调整工件的位置;以及调节器,其配置在该机器的下部与底面之间, 流体被供给到真空处理容器。
    • 3. 发明授权
    • Vacuum processing apparatus
    • 真空加工设备
    • US08100620B2
    • 2012-01-24
    • US12203168
    • 2008-09-03
    • Masakazu IsozakiAkitaka MakinoShingo KimuraMinoru Yatomi
    • Masakazu IsozakiAkitaka MakinoShingo KimuraMinoru Yatomi
    • H01L21/677
    • H01L21/6719H01L21/67017H01L21/67196
    • A vacuum processing apparatus includes vacuum processing vessels each having a processing chamber with a pressure-reduced interior space, a vacuum transfer vessel which is coupled to the vacuum vessels disposed therearound and which has a low-pressure interior space in which a to-be-processed workpiece is conveyed, an atmospheric air transfer vessel which is coupled to the front side of the vacuum transfer vessel and which includes on its front face side cassette tables mounting thereon a cassette with the workpiece received therein for conveying the workpiece in an interior space under an atmospheric pressure, a position-aligning machine disposed within the atmospheric air transfer vessel at one of right and left ends for adjusting a position of the workpiece, and an adjuster disposed between lower part of this machine and a floor face for adjusting the supply of a fluid being fed to the vacuum processing vessels.
    • 真空处理装置包括各自具有具有减压内部空间的处理室的真空处理容器,耦合到设置在其周围的真空容器并具有低压内部空间的真空转移容器, 被输送的处理过的工件;大气转移容器,其连接到真空传送容器的前侧,并且其前表面上包括安装在其上的工作台,其中工件被接收在其中,用于将工件传送到内部空间中 大气压力的位置调整机构,位于左右两端之一的大气输送容器内,用于调整工件的位置;以及调节器,其设置在该机器的下部与底面之间, 流体被供给到真空处理容器。
    • 4. 发明申请
    • VACUUM PROCESSING APPARATUS
    • 真空加工设备
    • US20090165952A1
    • 2009-07-02
    • US12039994
    • 2008-02-29
    • Susumu TauchiShingo KimuraMinoru YatomiMasakazu IsozakiAkitaka Makino
    • Susumu TauchiShingo KimuraMinoru YatomiMasakazu IsozakiAkitaka Makino
    • H01L21/306
    • H01L21/6719
    • The invention provides a semiconductor manufacturing apparatus having a high productivity per installed area. In a vacuum processing apparatus provided with a plurality of cassettes on which a cassette is stored, a vacuum feed chamber arranged in a back face side of the atmospheric air feed chamber in a state of being coupled thereto, having a polygonal plane shape and structured such that the wafer is fed in a depressurized inner portion, and a plurality of vacuum processing chambers detachably coupled to a side surface of the vacuum feed chamber, arranged in adjacent thereto and processing the wafer fed to an inner portion from the vacuum feed chamber, a plurality of vacuum processing apparatuses includes a plurality of etching processing chamber carrying out an etching process of the wafer and at least one ashing processing chamber carrying out an ashing process of the wafer, the ashing processing chamber is coupled to a side surface in one of right and left sides as seen from the front face of the vacuum feed chamber, and the atmospheric air feed chamber is arranged so as to be biased to the one side to which the ashing processing chamber is coupled.
    • 本发明提供了一种具有每个安装面积的高生产率的半导体制造装置。 在设置有多个盒体的真空处理装置中,盒子被存储在该真空处理装置上,一个真空进料腔室被布置在大气供给室的背面侧,处于与之相连的状态,具有多边形平面形状并被构造 晶片被供给到减压内部,以及可拆卸地联接到真空进料室的侧表面的多个真空处理室,与真空进料室相邻布置并处理从真空进料室供给到内部的晶片, 多个真空处理装置包括执行晶片的蚀刻处理的多个蚀刻处理室和进行晶片的灰化处理的至少一个灰化处理室,灰化处理室与右侧的一个侧面 以及从真空进料室的前表面看到的左侧,大气供给室被布置成被偏压到t 灰色处理室与其相连的一侧。
    • 5. 发明授权
    • Vacuum processing apparatus
    • 真空加工设备
    • US08731706B2
    • 2014-05-20
    • US12388617
    • 2009-02-19
    • Shingo KimuraShouji OkiguchiAkira KagoshimaShinji Obama
    • Shingo KimuraShouji OkiguchiAkira KagoshimaShinji Obama
    • H01L21/67
    • H01L21/67745H01L21/67778
    • A vacuum processing apparatus includes a plurality of vacuum containers; a vacuumized transfer unit connected with the vacuum containers and having a transfer chamber; a plurality of lock chambers connected to the vacuumized transfer unit; a vacuumized transferring section arranged in the transfer chamber to transfer the sample between each of the lock chambers and each of the processing chambers inside the plurality of vacuum containers; an atmospheric transfer container having a space through which the sample is transferred under the atmospheric pressure; an atmospheric transfer unit arranged in the atmospheric transfer container and adapted to transfer the sample from a cassette; and a controller operative on the basis of schedule information of a plurality of operations to adjust the operations, the information including times of stagnation of the plurality of samples and set therefor.
    • 真空处理装置包括多个真空容器; 与真空容器连接并具有传送室的真空转印单元; 连接到所述真空转印单元的多个锁定室; 设置在所述传送室中的抽真空转印部分,用于将所述样品在每个所述锁定室与所述多个真空容器内的所述处理室内传送; 具有空气的大气转移容器,样品在大气压下通过该空间传送; 大气转移单元,布置在大气转移容器中并适于从样品盒传送样品; 以及控制器,其基于多个操作的调度信息进行操作以调整操作,所述信息包括所述多个样本的停滞时间并为此设置。
    • 7. 发明授权
    • Dielectric ceramic compositions and process for producing the same
    • 介电陶瓷组合物及其制备方法
    • US4764494A
    • 1988-08-16
    • US59190
    • 1987-06-11
    • Ken-ichi SakabeShingo KimuraKageyasu Akashi
    • Ken-ichi SakabeShingo KimuraKageyasu Akashi
    • C04B35/468H01G4/12C04B35/46C04B35/49
    • C04B35/4682C04B35/4684H01G4/1227
    • A dielectric ceramic composition comprising 87.5 to 99.6 mole % of barium titanate as a first component, 0.2 to 7.0 mole % of copper oxide as a second component, 0.2 to 5.5 mole % of at least one member selected from the group consisting of lithium oxide, zinc oxide, cadmium oxide and iron oxide as a third component, and if necessary, at least one complex oxide selected from the group consisting of lead titanate, strontium titanate, calcium titanate, magnesium titanate, barium zirconate, calcium zirconate, strontium zirconate, lead zirconate, magnesium zirconate, lead stannate, calcium stannate, strontium stannate, barium stannate and magnesium stannate, as a fourth component in an amount of 0.3 to 40.0 moles per 100 moles of the sum of the first, second and third components; and a process for producing said dielectric ceramic composition.
    • 一种介电陶瓷组合物,其包含87.5至99.6摩尔%的钛酸钡作为第一组分,0.2至7.0摩尔%的氧化铜作为第二组分,0.2至5.5摩尔%的至少一种选自氧化锂, 氧化锌,氧化镉和氧化铁作为第三组分,如果需要,选自钛酸铅,钛酸锶,钛酸钙,钛酸镁,锆酸锆,锆酸锆,锆酸锶,铅的至少一种复合氧化物 锆酸盐,锆酸铅,锡酸铅,锡酸锶,锡酸锶,锡酸钡和锡酸镁,作为第一组分,第二组分和第三组分的总摩尔量为0.3至40.0摩尔的第四组分; 以及制造所述介电陶瓷组合物的方法。