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1. 发明授权

US4331899A Spark plug 失效
标题翻译：火花塞
公开(公告)号：US4331899A
公开(公告)日：1982-05-25
申请号：US123819
申请日：1980-02-22
申请人： Minoru Nishida , Tadashi Hattori , Akira Tanaka
发明人： Minoru Nishida , Tadashi Hattori , Akira Tanaka
IPC分类号： H01T13/32
CPC分类号： H01T13/32
摘要： A spark plug comprises a center electrode fixed to a leg portion which is exposed into the combustion chamber of an engine and comprises a ground electrode which is bent so that its end opposes the forward end of the center electrode whereby discharge is produced between the ground electrode and the center electrode. The ground electrode includes a discharging surface not opposing a first side end portion of the center electrode which is near the bent portion, but opposing a second side end portion of the center electrode which is remote from the bent portion of the ground electrode. The discharging surface of the ground electrode may be provided by forming a projection or groove at the opposing end of the ground electrode.
摘要翻译：火花塞包括固定到暴露于发动机的燃烧室中的腿部的中心电极，并且包括接地电极，该接地电极弯曲成使其端部与中心电极的前端相对，从而在接地电极之间产生放电和中心电极。接地电极包括不与中心电极的靠近弯曲部分的第一侧端部相对的放电表面，而与中心电极的远离接地电极的弯曲部分的第二侧端部相对。接地电极的放电表面可以通过在接地电极的相对端形成突起或槽来提供。

2. 发明授权

US4393850A Ignition system for internal combustion engines 失效
标题翻译：内燃机点火系统
公开(公告)号：US4393850A
公开(公告)日：1983-07-19
申请号：US279516
申请日：1981-07-01
申请人： Minoru Nishida , Tadashi Hattori , Akira Tanaka
发明人： Minoru Nishida , Tadashi Hattori , Akira Tanaka
IPC分类号： F02P3/045 , F02P9/00 , F02P15/02 , F02P15/00 , F02P15/10
CPC分类号： F02P9/007
摘要： An ignition system for an internal combustion engine includes an ignition coil system for applying a secondary generated voltage of an ignition coil and a DC high voltage to each of spark plugs and an ignition control circuit for controlling the ignition coil system. The ignition control circuit includes an ignition coil control circuit for energizing and deenergizing the ignition coil and a DC high voltage generating circuit for generating a DC high voltage. The DC high voltage generating circuit generates the DC high voltage from before the secondary generated voltage of the ignition coil causing capacitive discharge at a spark plug to a predetermined time or crank angle after the start of the discharge.
摘要翻译：一种用于内燃机的点火系统包括点火线圈系统，用于将点火线圈和DC高电压的次级发电电压施加到每个火花塞和用于控制点火线圈系统的点火控制电路。点火控制电路包括用于使点火线圈通电和断电的点火线圈控制电路和用于产生DC高压的DC高电压产生电路。直流高电压产生电路在点火线圈的二次产生电压之前从火花塞的电容放电到放电开始后的预定时间或曲柄角之后产生直流高电压。

3. 发明授权

US4329615A Spark plug for internal combustion engines 失效
标题翻译：内燃机火花塞
公开(公告)号：US4329615A
公开(公告)日：1982-05-11
申请号：US146248
申请日：1980-05-05
申请人： Akira Tanaka , Tadashi Hattori , Minoru Nishida
发明人： Akira Tanaka , Tadashi Hattori , Minoru Nishida
IPC分类号： F02P13/00 , H01T13/20
CPC分类号： H01T13/20
摘要： A spark plug for internal combustion engines includes a center electrode, a ground electrode which is bent so that its end portion opposes the forward end face of the center electrode, supporting means for exposing the electrodes into the combustion chamber of an engine, and a cut portion formed on one side of the center electrode end face opposing the ground electrode bend.
摘要翻译：用于内燃机的火花塞包括中心电极，接地电极，其弯曲成使得其端部与中心电极的前端面相对，用于将电极暴露于发动机的燃烧室的支撑装置和切割形成在与接地电极弯曲相对的中心电极端面一侧的部分。

4. 发明申请

US20220326632A1 TONER, DEVELOPING AGENT, TONER HOUSING UNIT, IMAGE FORMING APPARATUS, AND A METHOD OF FORMING IMAGES 有权
公开(公告)号：US20220326632A1
公开(公告)日：2022-10-13
申请号：US17657471
申请日：2022-03-31
申请人： Keiji MAKABE , Akira Tanaka , Hidekazu Kakinuma , Tsukiko Takahashi
发明人： Keiji MAKABE , Akira Tanaka , Hidekazu Kakinuma , Tsukiko Takahashi
IPC分类号： G03G9/097 , G03G15/08 , G03G9/08
摘要： [Object] An object of the invention is to provide a toner that can both achieve a higher level of low temperature fixability and suppression of the toner scattering.
[Means of Achieving the Object]
The disclosure is to provide a toner, including base-particles, and an external-additive, wherein a glass-transition temperature obtained from a DSC-curve at a second-warming of a THF-insoluble component is −50° C. or higher and 10° C. or lower, wherein an average circularity of the toner is 0.975 or more and 0.985 or lower, wherein the toner satisfies the following formula: 1.5≤Bt−0.025−Ct≤3.0, wherein the Bt [m2/g] is a BET-specific-surface area of the toner-particles, and the Ct [%] is a coverage by the external-additive, and, at least a portion of a surface of the external-additive is coated with either an oxide of a metallic element, a hydroxide of the metallic element, or both.

5. 发明授权

US10303072B2 Toner, developer, and image forming device 有权
公开(公告)号：US10303072B2
公开(公告)日：2019-05-28
申请号：US15889461
申请日：2018-02-06
申请人： Akira Tanaka , Hiroyuki Takeda , Junichi Awamura , Hiroshi Yamada , Daichi Hisakuni , Yasuo Kamada
发明人： Akira Tanaka , Hiroyuki Takeda , Junichi Awamura , Hiroshi Yamada , Daichi Hisakuni , Yasuo Kamada
IPC分类号： G03G9/087 , C08G63/42 , C08G63/20 , G03G15/00 , C08G63/195 , C08G63/16 , C08G63/66 , C08G18/75 , C08G18/42
摘要： A toner is provided. The toner contains a polyester resin. The toner has a glass transition temperature (Tg1st) at first temperature rising of differential scanning calorimetry (DSC) of from 45° C. to 65° C. The toner includes a component insoluble in tetrahydrofuran (THF) having two glass transition temperatures (Tga1st and Tgb1st) at the first temperature rising of DSC, where Tga1st is in a range of −45° C. to 5° C. and Tgb1st is in a range of 45° C. to 70° C. The toner includes a component soluble in THF having a glass transition temperature (Tg2nd) at second temperature rising of DSC of from 40° C. to 65° C.

6. 发明授权

US08686398B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08686398B2
公开(公告)日：2014-04-01
申请号：US13599852
申请日：2012-08-30
申请人： Akira Tanaka , Yoko Motojima
发明人： Akira Tanaka , Yoko Motojima
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device includes a first conductivity-type first semiconductor layer, a second conductivity-type second semiconductor layer, a semiconductor light emitting layer, and first and second electrodes. The semiconductor light emitting layer is provided between the first semiconductor layer and the second semiconductor layer, and includes a multiple quantum well structure. The quantum well structure includes well layers and barrier layers each laminated alternately, each of the well layers being not less than 6 nm and not more than 10 nm. The first and second electrodes are electrically connected to the first and second semiconductor layers such that current flows in a direction substantially vertical to the main surface.
摘要翻译：半导体发光器件包括第一导电型第一半导体层，第二导电型第二半导体层，半导体发光层以及第一和第二电极。半导体发光层设置在第一半导体层和第二半导体层之间，并且包括多量子阱结构。量子阱结构包括交替层叠的阱层和势垒层，每个阱层不小于6nm且不大于10nm。第一和第二电极电连接到第一和第二半导体层，使得电流在基本垂直于主表面的方向上流动。

7. 发明授权

US08570240B2 Communication sheet structure 有权
标题翻译：通讯单结构
公开(公告)号：US08570240B2
公开(公告)日：2013-10-29
申请号：US12996839
申请日：2008-06-27
申请人： Akira Tanaka , Machiko Oouchida , Hiroyuki Mori
发明人： Akira Tanaka , Machiko Oouchida , Hiroyuki Mori
IPC分类号： H01Q1/36
CPC分类号： H04B13/00
摘要： A communication sheet structure for transmitting electromagnetic waves, and thereby performing communication, is characterized in that the communication sheet structure includes a planar base material with a relative dielectric constant at a frequency of from 800 MHz to 10 GHz of from 1.0 to 15.0, and one side of the base material includes conductor A existing portion and non-existing portion, and the other side of the base material includes a conductor B existing over 90% or more thereof. The communication sheet structure enables communication in two dimensions, and the communication sheet structure is extremely excellent in communication performances.
摘要翻译：用于传送电磁波，从而进行通信的通信片结构的特征在于，通信片结构包括平面基底材料，其相对介电常数在800MHz至10GHz的频率范围为1.0至15.0，一个基体材料的一侧包括导体A存在部分和不存在部分，并且基材的另一侧包括存在于其中90％以上的导体B. 通信片结构使得能够在二维方面进行通信，并且通信片结构在通信性能方面非常优异。

8. 发明申请

US20130228742A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20130228742A1
公开(公告)日：2013-09-05
申请号：US13599852
申请日：2012-08-30
申请人： Akira Tanaka , Yoko Motojima
发明人： Akira Tanaka , Yoko Motojima
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device includes a first conductivity-type first semiconductor layer, a second conductivity-type second semiconductor layer, a semiconductor light emitting layer, and first and second electrodes. The semiconductor light emitting layer is provided between the first semiconductor layer and the second semiconductor layer, and includes a multiple quantum well structure. The quantum well structure includes well layers and barrier layers each laminated alternately, each of the well layers being not less than 6 nm and not more than 10 nm. The first and second electrodes are electrically connected to the first and second semiconductor layers such that current flows in a direction substantially vertical to the main surface.
摘要翻译：半导体发光器件包括第一导电型第一半导体层，第二导电型第二半导体层，半导体发光层以及第一和第二电极。半导体发光层设置在第一半导体层和第二半导体层之间，并且包括多量子阱结构。量子阱结构包括交替层叠的阱层和势垒层，每个阱层不小于6nm且不大于10nm。第一和第二电极电连接到第一和第二半导体层，使得电流在基本垂直于主表面的方向上流动。

9. 发明授权

US08410473B2 Light emitting device 失效
标题翻译：发光装置
公开(公告)号：US08410473B2
公开(公告)日：2013-04-02
申请号：US13291176
申请日：2011-11-08
申请人： Akira Tanaka
发明人： Akira Tanaka
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/025 , H01L33/32 , H01S5/309 , H01S5/34333
摘要： A light emitting device includes: a first layer made of a semiconductor of a first conductivity type; a second layer made of a semiconductor of a second conductivity type; an active layer including a multiple quantum well provided between the first layer and the second layer, impurity concentration of the first conductivity type in each barrier layer of the multiple quantum well having a generally flat distribution or increasing toward the second layer, average of the impurity concentration in the barrier layer on the second layer side as viewed from each well layer of the multiple quantum well being equal to or greater than average of the impurity concentration in the barrier layer on the first layer side, and average of the impurity concentration in the barrier layer nearest to the second layer being higher than average of the impurity concentration in the barrier layer nearest to the first layer.
摘要翻译：发光器件包括：由第一导电类型的半导体制成的第一层; 由第二导电类型的半导体制成的第二层; 包括设置在第一层和第二层之间的多量子阱的有源层，多量子阱的每个势垒层中的第一导电类型的杂质浓度具有大致平坦的分布或朝着第二层增加，杂质的平均值从多量子阱的各阱层观察的第二层侧的阻挡层的浓度等于或大于第一层侧的阻挡层中的杂质浓度的平均值，以及最靠近第二层的阻挡层高于最靠近第一层的势垒层中的杂质浓度的平均值。

10. 发明授权

US08035212B2 Semiconductor chip mounting body, method of manufacturing semiconductor chip mounting body and electronic device 有权
标题翻译：半导体芯片安装体，半导体芯片安装体和电子器件的制造方法
公开(公告)号：US08035212B2
公开(公告)日：2011-10-11
申请号：US12621387
申请日：2009-11-18
申请人： Akira Tanaka , Minoru Takizawa , Mitsuyoshi Tanimoto , Akihiko Happoya
发明人： Akira Tanaka , Minoru Takizawa , Mitsuyoshi Tanimoto , Akihiko Happoya
IPC分类号： H01L23/48
CPC分类号： H01L21/563 , H01L23/295 , H01L23/3121 , H01L24/743 , H01L2224/16225 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2924/00011 , H01L2924/00014 , H01L2924/01029 , H01L2924/10253 , H01L2924/351 , H01L2924/00 , H01L2224/0401
摘要： According to one embodiment, a semiconductor chip mounting body, with an enhanced shock-resistance at portions of the bonding member corresponding to the corners of a semiconductor chip, is provided. The semiconductor chip mounting body includes a circuit board having a circuit pattern formed on a mounting surface thereof, a semiconductor chip mounted on the circuit pattern of the circuit board, and a bonding member arranged at least between the circuit board and the semiconductor chip, and on the sides of the semiconductor chip to fix the semiconductor chip on the circuit board. The bonding member contains thermosetting resin and magnetic powder dispersed in the thermosetting resin. The magnetic powder is locally disposed in portions of the bonding member which is located the corners of the semiconductor chip.
摘要翻译：根据一个实施例，提供一种半导体芯片安装体，其在与半导体芯片的角部对应的接合部件的部分处具有增强的抗冲击性。半导体芯片安装体包括电路板，其电路图案形成在其安装表面上，安装在电路板的电路图案上的半导体芯片和至少布置在电路板和半导体芯片之间的接合部件，以及在半导体芯片的侧面上将半导体芯片固定在电路板上。接合部件包含分散在热固性树脂中的热固性树脂和磁性粉末。磁性粉末局部地设置在位于半导体芯片的角部的接合部件的部分中。

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