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1. 发明申请

US20080121928A1 Semiconductor photocathode 审中-公开
标题翻译：半导体光电阴极
公开(公告)号：US20080121928A1
公开(公告)日：2008-05-29
申请号：US11987216
申请日：2007-11-28
申请人： Minoru Niigaki , Kazutoshi Nakajima , Toru Hirohata , Hirofumi Kan
发明人： Minoru Niigaki , Kazutoshi Nakajima , Toru Hirohata , Hirofumi Kan
IPC分类号： H01L31/0336
CPC分类号： H01L31/1035 , H01L31/0735 , Y02E10/544
摘要： A semiconductor photocathode has first and second III-V compound semiconductor layers doped with a p-type impurity and joined to each other to make a heterojunction. The second III-V compound semiconductor layer functions as a light absorbing layer, an energy gap of the second III-V compound semiconductor layer is smaller than that of the first III-V compound semiconductor layer, and Be or C is used as the p-type dopant in each semiconductor layer. At this time, the second III-V compound semiconductor layer may be deposited on the first III-V compound semiconductor layer. The first III-V compound semiconductor layer and the second III-V compound semiconductor layer may contain at least one from each group of (In, Ga, Al) and (As, P, N).
摘要翻译：半导体光电阴极具有掺杂有p型杂质并且彼此接合以形成异质结的第一和第二III-V族化合物半导体层。第二III-V族化合物半导体层用作光吸收层，第二III-V族化合物半导体层的能隙小于第一III-V族化合物半导体层的能隙，使用Be或C作为p 型掺杂剂。此时，第二III-V族化合物半导体层可以沉积在第一III-V族化合物半导体层上。第一III-V族化合物半导体层和第二III-V族化合物半导体层可以含有（In，Ga，Al）和（As，P，N）中的至少一种。

2. 发明申请

US20080121909A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20080121909A1
公开(公告)日：2008-05-29
申请号：US11987215
申请日：2007-11-28
申请人： Minoru Niigaki , Toru Hirohata , Kazutoshi Nakajima , Hirofumi Kan
发明人： Minoru Niigaki , Toru Hirohata , Kazutoshi Nakajima , Hirofumi Kan
IPC分类号： H01L33/00 , H01L31/0336
CPC分类号： H01L33/30 , H01L31/03046 , H01L31/1035 , H01L33/02 , H01L33/025 , H01L33/305 , Y02E10/544
摘要： A semiconductor device has first and second III-V compound semiconductor layers one of which functions as a photosensitive layer or as a light emitting layer, which are doped with a p-type impurity in a low concentration, and which are joined to each other to make a heterojunction. An energy gap of the second III-V compound semiconductor layer is smaller than that of the first III-V compound semiconductor layer and the p-type dopant in each semiconductor layer is Be or C. At this time, the second III-V compound semiconductor layer may be deposited on the first III-V compound semiconductor layer. The first III-V compound semiconductor layer and the second III-V compound semiconductor layer may contain at least one from each group of (In, Ga, Al) and (As, P, N).
摘要翻译：半导体器件具有第一和第二III-V族化合物半导体层，其中一个作为感光层或作为发光层，其以低浓度掺杂有p型杂质，并且彼此接合，做异质结。第二III-V族化合物半导体层的能隙比第一III-V族化合物半导体层的能隙小，在各半导体层中的p型掺杂剂为Be或C.此时，第二III-V族化合物半导体层可以沉积在第一III-V族化合物半导体层上。第一III-V族化合物半导体层和第二III-V族化合物半导体层可以含有（In，Ga，Al）和（As，P，N）中的至少一种。

3. 发明授权

US06917058B2 Semiconductor photocathode 有权
标题翻译：半导体光电阴极
公开(公告)号：US06917058B2
公开(公告)日：2005-07-12
申请号：US10433060
申请日：2001-12-18
申请人： Minoru Niigaki , Toru Hirohata , Hirofumi Kan , Kuniyoshi Mori
发明人： Minoru Niigaki , Toru Hirohata , Hirofumi Kan , Kuniyoshi Mori
IPC分类号： H01J1/34 , H01J29/38 , H01J31/50 , H01J40/06 , H01L29/24
CPC分类号： H01J1/34 , H01J2201/3423
摘要： In the case of a thick light-absorbing layer 2, a phenomenon of a decrease in the time resolution occurs. However, when the thickness of the light-absorbing layer 2 is limited, a portion of low electron concentration in one electron group is cut out, and hence overlap regions of adjacent electron concentration distributions decrease. Therefore, by shortening the transit time necessary for the passage of electrons, regions of overlapping electron distributions due to diffusion can also be suppressed. Furthermore, the strength of an electric field within a light-absorbing layer can be increased by thinning the light-absorbing layer. Therefore, the time resolution of infrared rays can be remarkably improved by a synergistic action of these effects. If it is assumed that the time resolution is 40 ps (picoseconds), for example, when the thickness of a light-absorbing layer is 1.3 μm which is nearly equal to the wavelength of infrared, then a possible time resolution is 7.5 ps when this thickness is 0.19 μm.
摘要翻译：在厚光吸收层2的情况下，会发生时间分辨率降低的现象。然而，当光吸收层2的厚度受限时，一个电子组中的低电子浓度部分被切掉，因此相邻电子浓度分布的重叠区域减小。因此，通过缩短电子通过所需的通行时间，也可以抑制由扩散引起的重叠电子分布的区域。此外，可以通过使光吸收层变薄来增加光吸收层内的电场强度。因此，通过这些效果的协同作用，可以显着提高红外线的时间分辨率。如果假设时间分辨率为40ps（皮秒），例如，当光吸收层的厚度为1.3μm，几乎等于红外线的波长时，则当这样的时间分辨率为7.5ps时厚度为0.19毫米。

4. 发明授权

US07816866B2 Photocathode comprising a plurality of openings on an electron emission layer 失效
标题翻译：光电阴极包括在电子发射层上的多个开口
公开(公告)号：US07816866B2
公开(公告)日：2010-10-19
申请号：US11585936
申请日：2006-10-25
申请人： Kazutoshi Nakajima , Minoru Niigaki , Tomoko Mochizuki , Toru Hirohata
发明人： Kazutoshi Nakajima , Minoru Niigaki , Tomoko Mochizuki , Toru Hirohata
IPC分类号： H01J40/06 , H01J37/08 , G21K5/10 , H01L29/12
CPC分类号： H01J1/34 , H01J2201/3423
摘要： A semiconductor photocathode 1 includes: a transparent substrate 11; a first electrode 13, formed on the transparent substrate 11 and enabling passage of light that has been transmitted through the transparent substrate 11; a window layer 14, formed on the first electrode 13 and formed of a semiconductor material with a thickness of no less than 10 nm and no more than 200 nm; a light absorbing layer 15, formed on the window layer 14, formed of a semiconductor material that is lattice matched to the window layer 14, is narrower in energy band gap than the window layer 14, and in which photoelectrons are excited in response to the incidence of light; an electron emission layer 16, formed on the light absorbing layer 15, formed of a semiconductor material that is lattice matched to the light absorbing layer 15, and emitting the photoelectrons excited in the light absorbing layer 15 to the exterior from a surface; and a second electrode 18, formed on the electron emission layer.
摘要翻译：半导体光电阴极1包括：透明基板11; 第一电极13，其形成在透明基板11上，并能透过透明基板11的光通过; 窗口层14，其形成在第一电极13上并且由不小于10nm且不大于200nm的厚度的半导体材料形成; 形成在与窗口层14格子匹配的半导体材料的窗口层14上的光吸收层15的能带隙比窗口层14更窄，并且其中光电子响应于光的发生; 由与光吸收层15晶格匹配的半导体材料形成的光吸收层15上形成的电子发射层16，并且将从光吸收层15激发的光电子从表面发射到外部; 以及形成在电子发射层上的第二电极18。

5. 发明申请

US20090273281A1 PHOTOCATHODE AND ELECTRON TUBE HAVING THE SAME 审中-公开
标题翻译：具有相同的光电管和电子管
公开(公告)号：US20090273281A1
公开(公告)日：2009-11-05
申请号：US12432850
申请日：2009-04-30
申请人： Minoru Niigaki , Toru Hirohata , Harumasa Yoshida , Hirofumi Kan
发明人： Minoru Niigaki , Toru Hirohata , Harumasa Yoshida , Hirofumi Kan
IPC分类号： H01J40/06 , H01L29/12
CPC分类号： H01J31/50 , H01J1/34 , H01J40/06 , H01J2231/5001
摘要： The photocathode of the present invention is provided with a supporting substrate composed of a single-crystal compound semiconductor, a light absorbing layer which is formed on the supporting substrate and smaller in an energy band gap than the supporting substrate to absorb incident light transmitted through the supporting substrate, thereby generating photoelectrons, and a surface layer which is formed on the light absorbing layer to lower a work function of the light absorbing layer, in which the supporting substrate comprises Al(1−x)GaxN (0≦X
摘要翻译：本发明的光电阴极设置有由单晶化合物半导体构成的支撑基板，形成在支撑基板上的光吸收层，并且与支撑基板相比能量带隙更小，以吸收透过该基板的入射光支撑基板，从而产生光电子;以及表面层，其形成在光吸收层上以降低光吸收层的功函数，其中支撑衬底包括Al（1-x）GaxN（0≤x≤1 ），并且光吸收层包括由选自Al，Ga和In以及N中的至少一种材料构成的化合物半导体。

6. 发明授权

US06563264B2 Photocathode and electron tube 有权
公开(公告)号：US06563264B2
公开(公告)日：2003-05-13
申请号：US09842831
申请日：2001-04-27
申请人： Minoru Niigaki , Toru Hirohata , Tomoko Mochizuki , Hirofumi Kan
发明人： Minoru Niigaki , Toru Hirohata , Tomoko Mochizuki , Hirofumi Kan
IPC分类号： H01J4018
CPC分类号： H01J1/34 , H01J2201/3423
摘要： This photocathode comprises: InP substrate 1; InAsx2P1−x2(0 x1>0.53) light-absorbing layer 3; InAsx3P1−x3 (0

7. 发明授权

US5986387A Transmission type electron multiplier and electron tube provided 失效
标题翻译：提供透射型电子倍增器和电子管
公开(公告)号：US5986387A
公开(公告)日：1999-11-16
申请号：US964890
申请日：1997-11-05
申请人： Minoru Niigaki , Toru Hirohata , Hirofumi Kan , Masami Yamada
发明人： Minoru Niigaki , Toru Hirohata , Hirofumi Kan , Masami Yamada
IPC分类号： H01J1/32 , H01J31/50 , H01J43/04 , H01J43/10 , H01J43/22 , H01J43/24
CPC分类号： H01J43/045 , H01J1/32 , H01J43/10
摘要： This invention relates to a transmission type electron multiplier having a high secondary electron generation efficiency and having the structure capable of detecting positions of incidence of detected light, and also to an electron tube provided therewith. The electron tube comprises a closed container, an electron source, housed in the closed container, for emitting electrons into the closed container, an anode disposed so as to face the electron source, and a transmission type electron multiplier disposed between the electron source and the anode. Particularly, the transmission type electron multiplier comprises a thin film of diamond or a material containing a principal component of diamond, and a reinforcing member for reinforcing the thin film, the reinforcing member having an aperture for exposing a part of the thin film.
摘要翻译：本发明涉及具有高二次电子发生效率并且具有能够检测检测到的光的入射位置的结构的透射型电子倍增器，以及与其相关的电子管。电子管包括容纳在密闭容器中的密封容器，电子源，用于将电子发射到密闭容器中，设置成面对电子源的阳极和设置在电子源和电子源之间的透射型电子倍增器阳极。特别地，透射型电子倍增器包括金刚石薄膜或含有金刚石主要成分的材料，以及用于增强薄膜的加强构件，所述加强构件具有用于暴露薄膜的一部分的孔。

8. 发明授权

US5982094A Electron tube with polycrystalline diamond photocathode 失效
标题翻译：电子管与多晶金刚石光电阴极
公开(公告)号：US5982094A
公开(公告)日：1999-11-09
申请号：US931459
申请日：1997-09-17
申请人： Minoru Niigaki , Toru Hirohata , Hirofumi Kan , Masami Yamada
发明人： Minoru Niigaki , Toru Hirohata , Hirofumi Kan , Masami Yamada
IPC分类号： H01J1/34 , H01J40/16 , H01J43/08 , H01J40/06
CPC分类号： H01J40/16 , H01J1/34 , H01J43/08 , H01J2201/3421 , H01J2231/50
摘要： A photocathode includes a first layer of polycrystalline diamond or a material mainly composed of polycrystalline diamond. The first layer of polycrystalline diamond may be terminated with hydrogen, or oxygen, and a second layer of an alkali metal or compound of an alkali metal, may be provided on the first layer of polycrystalline diamond whose surface is terminated with hydrogen or oxygen. The photocathode can be use for both reflection and transmission electron tubes and can yield a quantum efficiency higher than that in a monocrystal diamond thin film.
摘要翻译：光电阴极包括第一层多晶金刚石或主要由多晶金刚石构成的材料。第一层多晶金刚石可以用氢或氧终止，并且第二层碱金属或碱金属化合物可以在其表面用氢或氧终止的第一多晶金刚石层上提供。光电阴极可以用于反射和透射电子管，并且可以产生比单晶金刚石薄膜中的量子效率更高的量子效率。

9. 发明授权

US5959400A Electron tube having a diamond field emitter 失效
标题翻译：具有金刚石场发射体的电子管
公开(公告)号：US5959400A
公开(公告)日：1999-09-28
申请号：US950177
申请日：1997-10-14
申请人： Minoru Niigaki , Toru Hirohata , Hirofumi Kan , Masami Yamada
发明人： Minoru Niigaki , Toru Hirohata , Hirofumi Kan , Masami Yamada
IPC分类号： H01J31/12 , H01J1/304 , H01J7/02 , H01J29/04 , H01J29/94 , H01J1/30
CPC分类号： H01J29/94 , H01J1/304 , H01J2201/30426 , H01J2201/30457 , H01J2329/00
摘要： The present invention relates to an electron tube having a configuration which can maintain its operating stability for a long period of time. The electron tube comprises, at least, a field emitter which is made of diamond or a material mainly composed of diamond and has a surface terminated with hydrogen, and a sealed envelope for accommodating the diamond field emitter. Due to the hydrogen termination, the electron affinity of the diamond field emitter is set to a negative state. Also, hydrogen is enclosed within the sealed envelope. Due to this configuration, the hydrogen-terminated state of the diamond field emitter surface is stabilized, and the electron affinity of the diamond emitter is restrained from changing for a long period of time.
摘要翻译：本发明涉及具有长时间保持其运行稳定性的结构的电子管。电子管至少包括由金刚石制成的场致发射体或主要由金刚石构成并具有用氢封端的表面的材料，以及用于容纳金刚石场发射体的密封外壳。由于氢终止，金刚石场发射体的电子亲和力被设定为负状态。此外，氢气封闭在密封的信封内。由于这种结构，金刚石场发射体表面的氢端基状态被稳定，并且金刚石发射体的电子亲和力被抑制长时间变化。

10. 发明申请

US20070096648A1 Photocathode 失效
标题翻译：光电阴极
公开(公告)号：US20070096648A1
公开(公告)日：2007-05-03
申请号：US11585936
申请日：2006-10-25
申请人： Kazutoshi Nakajima , Minoru Niigaki , Tomoko Mochizuki , Toru Hirohata
发明人： Kazutoshi Nakajima , Minoru Niigaki , Tomoko Mochizuki , Toru Hirohata
IPC分类号： H01J40/06
CPC分类号： H01J1/34 , H01J2201/3423
摘要： A semiconductor photocathode 1 includes: a transparent substrate 11; a first electrode 13, formed on the transparent substrate 11 and enabling passage of light that has been transmitted through the transparent substrate 11; a window layer 14, formed on the first electrode 13 and formed of a semiconductor material with a thickness of no less than 10 nm and no more than 200 nm; a light absorbing layer 15, formed on the window layer 14, formed of a semiconductor material that is lattice matched to the window layer 14, is narrower in energy band gap than the window layer 14, and in which photoelectrons are excited in response to the incidence of light; an electron emission layer 16, formed on the light absorbing layer 15, formed of a semiconductor material that is lattice matched to the light absorbing layer 15, and emitting the photoelectrons excited in the light absorbing layer 15 to the exterior from a surface; and a second electrode 18, formed on the electron emission layer.
摘要翻译：半导体光电阴极1包括：透明基板11; 第一电极13，其形成在透明基板11上，并能透过透明基板11的光通过; 窗口层14，其形成在第一电极13上并且由不小于10nm且不大于200nm的厚度的半导体材料形成; 形成在与窗口层14格子匹配的半导体材料的窗口层14上的光吸收层15的能带隙比窗口层14更窄，并且其中光电子响应于光的发生; 由与光吸收层15晶格匹配的半导体材料形成的光吸收层15上形成的电子发射层16，并且将从光吸收层15激发的光电子从表面发射到外部; 以及形成在电子发射层上的第二电极18。

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