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1. 发明授权

US5471051A Photocathode capable of detecting position of incident light in one or two dimensions, phototube, and photodetecting apparatus containing same 失效
标题翻译：能够检测一维或二维入射光的位置的光电阴极，光电管和含有它的光电检测装置
公开(公告)号：US5471051A
公开(公告)日：1995-11-28
申请号：US251928
申请日：1994-06-01
申请人： Minoru Niigaki , Katsuyuki Kinoshita , Toru Hirohata , Tuneo Ihara , Masami Yamada , Norio Asakura , Yasuharu Negi , Tomoko Suzuki
发明人： Minoru Niigaki , Katsuyuki Kinoshita , Toru Hirohata , Tuneo Ihara , Masami Yamada , Norio Asakura , Yasuharu Negi , Tomoko Suzuki
IPC分类号： H01J1/34 , H01J43/04 , H01J40/14
CPC分类号： H01J1/34 , H01J43/045
摘要： There is disclosed a photocathode comprising:a photoelectric conversion layer for internally exciting photoelectrons in response to incident photons; a semiconductor layer having a photoelectron emission surface for emitting the photoelectrons generated and accelerated in the photoelectric conversion layer from the photoelectron emission surface; an upper surface electrode formed on the photoelectron emission surface of the semiconductor layer; and a lower surface electrode formed on the semiconductor layer so that the lower surface electrode is opposite to the upper surface electrode through the semiconductor layer, the upper surface electrode being divided so as to provide a plurality of pixel electrodes which are electrically insulated from each other, the plurality of pixel electrodes being respectively connected to a plurarity of bias application wires.
摘要翻译：公开了一种光电阴极，包括：用于响应于入射光子而内部激发光电子的光电转换层; 具有光电子发射表面的半导体层，用于发射从光电子发射表面在光电转换层中产生和加速的光电子; 形成在所述半导体层的光电子发射表面上的上表面电极; 以及形成在半导体层上的下表面电极，使得下表面电极通过半导体层与上表面电极相对，上表面电极被分割以提供彼此电绝缘的多个像素电极多个像素电极分别连接到多个偏置施加电线。

2. 发明授权

US5336902A Semiconductor photo-electron-emitting device 失效
标题翻译：半导体光电子发射器件
公开(公告)号：US5336902A
公开(公告)日：1994-08-09
申请号：US956283
申请日：1992-10-05
申请人： Minoru Nigaki , Tuneo Ihara , Toru Hirohata , Tomoko Suzuki , Kimitsugu Nakamura , Norio Asakura , Masami Yamada , Yasuharu Negi , Tomihiko Kuroyanagi , Yoshihiko Mizushima
发明人： Minoru Nigaki , Tuneo Ihara , Toru Hirohata , Tomoko Suzuki , Kimitsugu Nakamura , Norio Asakura , Masami Yamada , Yasuharu Negi , Tomihiko Kuroyanagi , Yoshihiko Mizushima
IPC分类号： H01J1/34 , H01L29/48
CPC分类号： H01J1/34
摘要： This invention relates to a semiconductor photo-electron-emitting device for emitting photoelectrons excited from the valence band to the conduction band by incident photons on a semiconductor layer. The device includes a Schottky electrode formed on the emitting surface on a surface of the semiconductor layer, and a conductor layer formed on a surface opposite to the emitting surface. A set bias voltage is applied between the Schottky electrode and the conductor layer to accelerate photoelectrons generated by the excitation of incident photons to the emitting surface and to transfer the accelerated photoelectrons from an energy band of a smaller effective mass to an energy band of a larger effective mass.
摘要翻译：本发明涉及一种半导体光电子发射器件，用于通过半导体层上的入射光子发射从价带激发到导带的光电子。该器件包括形成在半导体层的表面上的发光表面上的肖特基电极和形成在与发射表面相对的表面上的导体层。在肖特基电极和导体层之间施加设定的偏置电压，以加速由入射光子激发到发射表面产生的光电子，并将加速光电子从较小有效质量的能带转移到较大的能带有效质量。

3. 发明授权

US5591986A Photoemitter electron tube and photodetector 失效
标题翻译： Photoemitter电子管和光电探测器
公开(公告)号：US5591986A
公开(公告)日：1997-01-07
申请号：US299664
申请日：1994-09-02
申请人： Minoru Niigaki , Toru Hirohata , Tuneo Ihara , Masami Yamada
发明人： Minoru Niigaki , Toru Hirohata , Tuneo Ihara , Masami Yamada
IPC分类号： H01J1/34 , H01L27/14 , H01J31/00 , H01L29/49
CPC分类号： H01J1/34 , H01J2201/3423
摘要： The present invention provides a photoemission device excellent in quantum efficiency of photoelectric conversion, a high-sensitive electron tube employing it, and a high-sensitive photodetecting apparatus. A photoemission device of the present invention is arranged to have a photon absorbing layer for absorbing incident photons to excite photoelectrons, an insulator layer layered on one surface of the photon absorbing layer, a lead electrode layered on the insulator layer, and a contact formed on the other surface of the photon absorbing layer to apply a predetermined polarity voltage between the lead electrode and the other surface of the photon absorbing layer, whereby the photoelectrons excited by the incident photons entering the photon absorbing layer and moving toward the one side are made to be emitted by an electric field formed between the lead electrode and the one surface by the predetermined polarity voltage.
摘要翻译：本发明提供了一种光电转换量子效率优异的使用它的高灵敏度电子管和高灵敏度光电检测装置的光电发射装置。本发明的发光装置被配置为具有用于吸收入射光子以激发光电子的光子吸收层，层叠在光子吸收层的一个表面上的绝缘体层，层叠在绝缘体层上的引线电极和形成在光子吸收层的另一个表面，以在引线电极和光子吸收层的另一个表面之间施加预定的极性电压，由此进入光子吸收层并朝向一侧移动的入射光子激发的光电子被制成由形成在引线电极和一个表面之间的电场发射预定的极性电压。

4. 发明授权

US5747826A Photoemitter electron tube, and photodetector 失效
标题翻译： Photoemitter电子管和光电检测器
公开(公告)号：US5747826A
公开(公告)日：1998-05-05
申请号：US671195
申请日：1996-06-27
申请人： Minoru Niigaki , Toru Hirohata , Tuneo Ihara , Masami Yamada
发明人： Minoru Niigaki , Toru Hirohata , Tuneo Ihara , Masami Yamada
IPC分类号： H01J1/34 , H01L29/47
CPC分类号： H01J1/34 , H01J2201/3423
摘要： The present invention provides a photoemission device excellent in quantum efficiency of photoelectric conversion, a high-sensitive electron tube employing it, and a high-sensitive photodetecting apparatus. A photoemission device of the present invention is arranged to have a photon absorbing layer for absorbing incident photons to excite photoelectrons, an insulator layer layered on one surface of the photon absorbing layer, a lead electrode layered on the insulator layer, and a contact formed on the other surface of the photon absorbing layer to apply a predetermined polarity voltage between the lead electrode and the other surface of the photon absorbing layer, whereby the photoelectrons excited by the incident photons entering the photon absorbing layer and moving toward the one side are made to be emitted by an electric field formed between the lead electrode and the one surface by the predetermined polarity voltage.
摘要翻译：本发明提供了一种光电转换量子效率优异的使用它的高灵敏度电子管和高灵敏度光电检测装置的光电发射装置。本发明的发光装置被配置为具有用于吸收入射光子以激发光电子的光子吸收层，层叠在光子吸收层的一个表面上的绝缘体层，层叠在绝缘体层上的引线电极和形成在光子吸收层的另一个表面，以在引线电极和光子吸收层的另一个表面之间施加预定的极性电压，由此进入光子吸收层并朝向一侧移动的入射光子激发的光电子被制成由形成在引线电极和一个表面之间的电场发射预定的极性电压。

5. 发明授权

US6002141A Method of using photocathode and method of using electron tube 失效
标题翻译：使用光电阴极的方法和使用电子管的方法
公开(公告)号：US6002141A
公开(公告)日：1999-12-14
申请号：US562580
申请日：1995-11-24
申请人： Minoru Niigaki , Toru Hirohata , Masami Yamada , Katsuyuki Kinoshita
发明人： Minoru Niigaki , Toru Hirohata , Masami Yamada , Katsuyuki Kinoshita
IPC分类号： H01J1/34 , H01J29/38 , H01J31/50 , H01J40/06 , H01L29/06 , H01L29/12
CPC分类号： H01J1/34
摘要： The present invention is to provide a method of using a photocathode including a laminated heterostructure of Group III-V semiconductors, which is constituted by a p-type light-absorbing layer formed on a p-type substrate and a p-type electron-emitting layer formed on the light-absorbing layer, a first electrode formed to have a rectifying function with respect to the electron-emitting layer, and a second electrode formed in ohmic contact with the substrate, wherein a voltage necessary and sufficient to form a potential gradient throughout the light-absorbing layer is applied between the first electrode and the second electrode, thereby accelerating photoelectrons excited in the light-absorbing layer which absorbs external incident light on the basis of an electric field formed in the light-absorbing layer and the electron-emitting layer and emitting the photoelectrons from the electron-emitting layer. The accelerated electrons largely decrease differences in transit time until reaching the emission surface of the electron-emitting layer as compared to diffused electrons. Therefore, the response speed of the photocathode for detecting external incident light is increased.
摘要翻译：本发明提供一种使用包含III-V族半导体的层叠异质结构的光电阴极的方法，该方法由形成在p型衬底上的p型光吸收层和p型电子发射形成在光吸收层上的第一电极，形成为具有相对于电子发射层的整流功能的第一电极和与该衬底欧姆接触形成的第二电极，其中，形成电势梯度所必需的电压在整个光吸收层处施加在第一电极和第二电极之间，从而基于在光吸收层和电子发射层中形成的电场来加速吸收外部入射光的光吸收层中激发的光电子，并从电子发射层发射光电子。与扩散电子相比，加速电子大大地减小了传播时间的差异，直到达到电子发射层的发射表面。因此，用于检测外部入射光的光电阴极的响应速度增加。

6. 发明授权

US5680007A Photomultiplier having a photocathode comprised of a compound semiconductor material 失效
标题翻译：具有由化合物半导体材料构成的光电阴极的光电倍增管
公开(公告)号：US5680007A
公开(公告)日：1997-10-21
申请号：US507985
申请日：1995-07-27
申请人： Minoru Niigaki , Toru Hirohata , Tomoko Suzuki , Masami Yamada
发明人： Minoru Niigaki , Toru Hirohata , Tomoko Suzuki , Masami Yamada
IPC分类号： H01J1/34 , H01J43/08
CPC分类号： H01J1/34 , H01J43/08 , H01J2201/3423
摘要： A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode and a lower surface electrode by a battery. Upon application of this voltage, a p-n junction formed between a contact layer and an electron emission layer is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer to excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface. The photoelectrons obtain an energy upon this electric field acceleration, and are transitioned, in the electron emission layer, to a conduction band at a higher energy level, and emitted into a vacuum.
摘要翻译：提供了具有优异的光电转换特性的稳定性和再现性并且具有能够获得高光敏性的结构的光电发射表面。通过电池在上表面电极和下表面电极之间施加预定的电压。在施加该电压时，形成在接触层和电子发射层之间的p-n结被反向偏置。耗尽层从p-n结延伸到光电发射表面，并且在电子发射层和在光子电子加速方向上的光吸收层形成电场。当入射光吸收在光吸收层中以激发光电子时，光电子通过电场被加速到发射表面。光电子在该电场加速度下获得能量，并且在电子发射层中被转变到更高能量级的导带，并且发射到真空中。

7. 发明授权

US5710435A Photomultiplier having a photocathode comprised of semiconductor material 失效
标题翻译：具有由半导体材料构成的光电阴极的光电倍增管
公开(公告)号：US5710435A
公开(公告)日：1998-01-20
申请号：US580057
申请日：1995-12-20
申请人： Minoru Niigaki , Toru Hirohata , Tomoko Suzuki , Masami Yamada
发明人： Minoru Niigaki , Toru Hirohata , Tomoko Suzuki , Masami Yamada
IPC分类号： H01J1/34 , H01J43/08 , H01L29/06 , H01L29/12
CPC分类号： H01J1/34 , H01J43/08 , H01J2201/3423
摘要： A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode and a lower surface electrode by a battery. Upon application of this voltage, a p-n junction formed between a contact layer and an electron emission layer is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer to excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface. The photoelectrons obtain an energy upon this electric field acceleration, and are transited, in the electron emission layer, to a conduction band at a higher energy level, and emitted into a vacuum.
摘要翻译：提供了具有优异的光电转换特性的稳定性和再现性并且具有能够获得高光敏性的结构的光电发射表面。通过电池在上表面电极和下表面电极之间施加预定的电压。在施加该电压时，形成在接触层和电子发射层之间的p-n结被反向偏置。耗尽层从p-n结延伸到光电发射表面，并且在电子发射层和在光子电子加速方向上的光吸收层形成电场。当入射光吸收在光吸收层中以激发光电子时，光电子通过电场被加速到发射表面。光电子在该电场加速下获得能量，并且在电子发射层中转移到更高能级的导带，并发射到真空中。

8. 发明授权

US07365356B2 Photocathode 有权
标题翻译：光电阴极
公开(公告)号：US07365356B2
公开(公告)日：2008-04-29
申请号：US11055663
申请日：2005-02-11
申请人： Toru Hirohata , Minoru Niigaki , Tomoko Mochizuki , Masami Yamada
发明人： Toru Hirohata , Minoru Niigaki , Tomoko Mochizuki , Masami Yamada
IPC分类号： H01L29/06 , H01L31/072
CPC分类号： H01J1/34 , H01J2201/342
摘要： The invention relates to a photocathode having a structure that permits a decrease in the radiant sensitivity at low temperatures is suppressed so that the S/N ratio is improved. In the photocathode, a light absorbing layer is formed on the upper layer of a substrate. An electron emitting layer is formed on the upper layer of the light absorbing layer. A contact layer having a striped-shape is formed on the upper layer of the electron emitting layer. A surface electrode composed of metal is formed on the surface of the contact layer. The interval between bars in the contact layer is adjusted so as to become 0.2 μm or more but 2 μm or less.
摘要翻译：本发明涉及具有抑制低温下的辐射灵敏度降低的结构的光电阴极，从而提高S / N比。在光电阴极中，在基板的上层形成有光吸收层。在光吸收层的上层形成电子发射层。具有条纹状的接触层形成在电子发射层的上层。在接触层的表面上形成由金属构成的表面电极。调整接触层中的条之间的间隔，使其变为0.2μm以上2μm以下。

9. 发明申请

US20050168144A1 Photocathode 有权
公开(公告)号：US20050168144A1
公开(公告)日：2005-08-04
申请号：US11055663
申请日：2005-02-11
申请人： Toru Hirohata , Minoru Niigaki , Tomoko Mochizuki , Masami Yamada
发明人： Toru Hirohata , Minoru Niigaki , Tomoko Mochizuki , Masami Yamada
IPC分类号： H01J1/34 , H01J40/06 , H01J43/08 , H01L29/06
CPC分类号： H01J1/34 , H01J2201/342
摘要： The invention relates to a photocathode having a structure that permits a decrease in the radiant sensitivity at low temperatures is suppressed so that the S/N ratio is improved. In the photocathode, a light absorbing layer is formed on the upper layer of a substrate. An electron emitting layer is formed on the upper layer of the light absorbing layer. A contact layer having a striped-shape is formed on the upper layer of the electron emitting layer. A surface electrode composed of metal is formed on the surface of the contact layer. The interval between bars in the contact layer is adjusted so as to become 0.2 μm or more but 2 μm or less.

10. 发明授权

US06903363B2 Photocathode 有权
标题翻译：光电阴极
公开(公告)号：US06903363B2
公开(公告)日：2005-06-07
申请号：US10705901
申请日：2003-11-13
申请人： Toru Hirohata , Minoru Niigaki , Tomoko Mochizuki , Masami Yamada
发明人： Toru Hirohata , Minoru Niigaki , Tomoko Mochizuki , Masami Yamada
IPC分类号： H01J1/34 , H01J40/06 , H01J43/08 , H01L29/06 , H01L33/00
CPC分类号： H01J1/34 , H01J2201/342
摘要： The invention relates to a photocathode having a structure that permits a decrease in the radiant sensitivity at low temperatures is suppressed so that the S/N ratio is improved. In the photocathode, a light absorbing layer is formed on the upper layer of a substrate. An electron emitting layer is formed on the upper layer of the light absorbing layer. A contact layer having a striped-shape is formed on the upper layer of the electron emitting layer. A surface electrode composed of metal is formed on the surface of the contact layer. The interval between bars in the contact layer is adjusted so as to become 0.2 μm or more but 2 μm or less.
摘要翻译：本发明涉及具有抑制低温下的辐射灵敏度降低的结构的光电阴极，从而提高S / N比。在光电阴极中，在基板的上层形成有光吸收层。在光吸收层的上层形成电子发射层。具有条纹状的接触层形成在电子发射层的上层。在接触层的表面上形成由金属构成的表面电极。调整接触层中的条之间的间隔，使其变为0.2μm以上2μm以下。

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