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1. 发明授权

US6084053A Electronic part and process for manufacturing the same 失效
标题翻译：电子零件和制造过程相同
公开(公告)号：US6084053A
公开(公告)日：2000-07-04
申请号：US60105
申请日：1998-04-15
申请人： Minoru Matsubara , Yasutake Inoue , Mayumi Kakuta , Igor Rozhanskii , Kohei Goto
发明人： Minoru Matsubara , Yasutake Inoue , Mayumi Kakuta , Igor Rozhanskii , Kohei Goto
IPC分类号： C08G73/10 , H01B3/30 , H05K1/03 , B32B27/00
CPC分类号： H01B3/306 , C08G73/10 , C08G73/1039 , H05K1/0346 , Y10S428/901
摘要： Electronic parts and a process for manufacturing the electronic parts are provided. The electronic parts comprise an electric insulating material exhibiting a high heat resistance and low dielectric constant as a structural component. The electric insulating material is formed of a polyimide containing a recurring unit represented by the following general formula (1). ##STR1##
摘要翻译：提供了电子部件和用于制造电子部件的工艺。电子部件包括表现出高耐热性和低介电常数作为结构部件的电绝缘材料。电绝缘材料由含有由以下通式（1）表示的重复单元的聚酰亚胺形成。

2. 发明授权

US06376634B1 Composition for film formation and material for insulating film formation 有权
标题翻译：用于成膜和用于绝缘膜形成的材料的组合物
公开(公告)号：US06376634B1
公开(公告)日：2002-04-23
申请号：US09585275
申请日：2000-06-02
申请人： Michinori Nishikawa , Kinji Yamada , Mayumi Kakuta , Yasutake Inoue , Masahiko Ebisawa , Satoko Hakamatsuka , Kentarou Tamaki
发明人： Michinori Nishikawa , Kinji Yamada , Mayumi Kakuta , Yasutake Inoue , Masahiko Ebisawa , Satoko Hakamatsuka , Kentarou Tamaki
IPC分类号： C09D18304
CPC分类号： H01B3/46
摘要： A composition for film formation which is useful as an interlayer insulating film material in the production of semiconductor devices and the like, and gives a coating film having excellent uniformity, low dielectric constant, low leakage current and excellent storage stability; and a material for insulating film formation using the composition. The composition comprises (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one compound selected from the group consisting of (A-1) compounds represented by the formula (1): R1aSi(OR2)4−a, and (A-2) compounds represented by the formula (2): R3b(R4O)3−bSi—(R7)d—Si(OR5)3−cR6c; and (B) a compound represented by the formula (3): R8O (CHCH3CH2O)eR9.
摘要翻译：在半导体装置等的制造中，可用作层间绝缘膜材料的成膜用组合物，得到均匀性，低介电常数，低漏电流和优异的储存稳定性的涂膜; 以及使用该组合物的成膜绝缘材料。该组合物包含（A）通过水解和缩合至少一种选自（A-1）由式（1）表示的化合物的化合物）：R1aSi（OR2）4-a和（A-2）由式（2）表示的化合物：R3b（R4O）3-bSi-（R7）d-Si（OR5）3-cR6c; 和（B）由式（3）表示的化合物：R8O（CHCH 3 CH 2 O）e R 9。

3. 发明授权

US6011123A Curable resin composition and cured products 失效
标题翻译：可固化树脂组合物和固化产物
公开(公告)号：US6011123A
公开(公告)日：2000-01-04
申请号：US974916
申请日：1997-11-20
申请人： Takahiko Kurosawa , Kinji Yamada , Minoru Matsubara , Yasutake Inoue , Tomotaka Shinoda , Kouhei Gotou
发明人： Takahiko Kurosawa , Kinji Yamada , Minoru Matsubara , Yasutake Inoue , Tomotaka Shinoda , Kouhei Gotou
IPC分类号： C08G77/455 , C08K5/5415 , C08L79/08 , C09D183/10 , H01L21/312 , C08L77/00
CPC分类号： H01L21/312 , C08G77/455 , C08K5/5415 , C08L79/08 , C09D183/10
摘要： A curable resin composition comprising (A) a hydrolyzate or a partial condensate of an organosilane compound, or both; (B) at least one compound selected from the group consisting of polyamic acids having a hydrolyzable silyl group or carboxylic acid anhydride group, or both, and polyimides having a hydrolyzable silyl group or carboxylic acid anhydride group, or both; and (C) a chelate compound or an alkoxide compound with a metal selected from the group consisting of zirconium, titanium, and aluminum, or both the chelate compound and the alkoxide compound. The resin composition can be cured and fabricated without producing no cracks into a cured product such as a semiconductor device having a low dielectric constant, high heat resistance and moisture resistance, superior adhesion to various substrate materials, superb electrical insulation properties, and low moisture absorption. Semiconductor devices using this curable resin composition as an insulating film exhibit a low electricity consumption, work at a high speed, and have excellent reliability.
摘要翻译：一种可固化树脂组合物，其包含（A）有机硅烷化合物的水解产物或部分缩合物，或两者; （B）至少一种选自具有水解性甲硅烷基或羧酸酐基团的聚酰胺酸或二者的化合物和具有可水解甲硅烷基或羧酸酐基团的聚酰亚胺或两者; 和（C）螯合化合物或选自锆，钛和铝的金属的醇盐化合物，或螯合化合物和醇盐化合物两者。可以固化和制造树脂组合物，而不会在诸如具有低介电常数，高耐热性和耐湿性，优异的各种基材的粘合性，优异的电绝缘性能和低吸湿性的半导体装置等固化产物中不产生裂纹。使用该固化性树脂组合物作为绝缘膜的半导体装置的电耗低，高速工作，可靠性优异。

4. 发明授权

US06313233B1 Curable resin composition cured products 有权
标题翻译：固化树脂组合物固化产物
公开(公告)号：US06313233B1
公开(公告)日：2001-11-06
申请号：US09447952
申请日：1999-11-29
申请人： Takahiko Kurosawa , Kinji Yamada , Minoru Matsubara , Yasutake Inoue , Tomotaka Shinoda , Kouhei Gotou
发明人： Takahiko Kurosawa , Kinji Yamada , Minoru Matsubara , Yasutake Inoue , Tomotaka Shinoda , Kouhei Gotou
IPC分类号： C08G6548
CPC分类号： H01L21/02126 , C08G77/455 , C08K5/5415 , C08L79/08 , C09D183/10 , H01L21/312 , C08L2666/52
摘要： A curable resin composition comprising (A) a hydrolyzate or a partial condensate of an organosilane compound, or both; (B) at least one compound selected from the group consisting of polyamic acids having a hydrolyzable silyl group or carboxylic acid anhydride group, or both, and polyimides having a hydrolyzable silyl group or carboxylic acid anhydride group, or both; and (C) a chelate compound or an alkoxide compound with a metal selected from the group consisting of zirconium, titanium, and aluminum, or both the chelate compound and the alkoxide compound. The resin composition can be cured and fabricated without producing no cracks into a cured product such as a semiconductor device having a low dielectric constant, high heat resistance and moisture resistance, superior adhesion to various substrate materials, superb electrical insulation properties, and low moisture absorption. Semiconductor devices using this curable resin composition as an insulating film exhibit a low electricity consumption, work at a high speed, and have excellent reliability.
摘要翻译：一种可固化树脂组合物，其包含（A）有机硅烷化合物的水解产物或部分缩合物，或两者; （B）至少一种选自具有水解性甲硅烷基或羧酸酐基团的聚酰胺酸或二者的化合物和具有可水解甲硅烷基或羧酸酐基团的聚酰亚胺或两者; 和（C）螯合化合物或选自锆，钛和铝的金属的醇盐化合物，或螯合化合物和醇盐化合物两者。可以固化和制造树脂组合物，而不会在诸如具有低介电常数，高耐热性和耐湿性，优异的各种基材的粘合性，优异的电绝缘性能和低吸湿性的半导体装置等固化产物中不产生裂纹。使用该固化性树脂组合物作为绝缘膜的半导体装置的电耗低，高速工作，可靠性优异。

5. 发明授权

US06465368B2 Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film 有权
标题翻译：绝缘膜形成材料的制造方法，绝缘膜形成材料和绝缘膜
公开(公告)号：US06465368B2
公开(公告)日：2002-10-15
申请号：US09849302
申请日：2001-05-07
申请人： Yasutake Inoue , Junji Kawai , Michinori Nishikawa , Kinji Yamada
发明人： Yasutake Inoue , Junji Kawai , Michinori Nishikawa , Kinji Yamada
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/316 , Y10T428/1457
摘要： A method of manufacturing an insulating film-forming material comprising dissolving an inorganic polymer compound or an organic polymer compound in an organic solvent having a solubility in water of 100 g/100 cc or less at 20° C., and causing the solution to come in contact with water or an acidic aqueous solution to perform liquid-liquid extraction. The insulating film-forming material has a low metal impurity content and is capable of forming a silica-based film having excellent relative dielectric constant characteristics and low leakage current characteristics.
摘要翻译：一种绝缘膜形成材料的制造方法，其特征在于，将无机高分子化合物或有机高分子化合物溶解在20℃下在水中的溶解度为100g / 100cc以下的有机溶剂中，使溶液达到与水或酸性水溶液接触以进行液 - 液萃取。绝缘膜形成材料具有低的金属杂质含量，并且能够形成具有优异的相对介电常数特性和低泄漏电流特性的二氧化硅基膜。

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