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1. 发明授权

US08436336B2 Structure and method for a high-speed semiconductor device having a Ge channel layer 有权
标题翻译：具有Ge沟道层的高速半导体器件的结构和方法
公开(公告)号：US08436336B2
公开(公告)日：2013-05-07
申请号：US11877186
申请日：2007-10-23
申请人： Minjoo L. Lee , Christopher W. Leitz , Eugene A. Fitzgerald
发明人： Minjoo L. Lee , Christopher W. Leitz , Eugene A. Fitzgerald
IPC分类号： H01L29/06
CPC分类号： H01L29/78696 , H01L29/1054 , H01L29/78684
摘要： The invention provides semiconductor structure comprising a strained Ge channel layer, and a gate dielectric disposed over the strained Ge channel layer. In one aspect of the invention, a strained Ge channel MOSFET is provided. The strained Ge channel MOSFET includes a relaxed SiGe virtual substrate with a Ge content between 50-95%, and a strained Ge channel formed on the virtual substrate. A gate structure is formed upon the strained Ge channel, whereupon a MOSFET is formed with increased performance over bulk Si. In another embodiment of the invention, a semiconductor structure comprising a relaxed Ge channel layer and a virtual substrate, wherein the relaxed Ge channel layer is disposed above the virtual substrate. In a further aspect of the invention, a relaxed Ge channel MOSFET is provided. The method includes providing a relaxed virtual substrate with a Ge composition of approximately 100% and a relaxed Ge channel formed on the virtual substrate.
摘要翻译：本发明提供包括应变Ge沟道层的半导体结构和设置在应变Ge沟道层上的栅极电介质。在本发明的一个方面，提供了应变的Ge沟道MOSFET。应变Ge沟道MOSFET包括Ge含量在50-95％之间的弛豫SiGe虚拟衬底和形成在虚拟衬底上的应变Ge沟道。在应变Ge通道上形成栅极结构，于是形成具有在体积Si上增加的性能的MOSFET。在本发明的另一实施例中，包括松弛的Ge沟道层和虚拟衬底的半导体结构，其中放宽的Ge沟道层设置在虚拟衬底之上。在本发明的另一方面，提供了一种放宽的Ge沟道MOSFET。该方法包括提供具有约100％的Ge组成的松弛虚拟衬底和形成在虚拟衬底上的松弛Ge沟道。

2. 发明授权

US07141820B2 Structures with planar strained layers 失效
标题翻译：具有平面应变层的结构
公开(公告)号：US07141820B2
公开(公告)日：2006-11-28
申请号：US10788741
申请日：2004-02-27
申请人： Minjoo L. Lee , Christopher W. Leitz , Eugene A. Fitzgerald
发明人： Minjoo L. Lee , Christopher W. Leitz , Eugene A. Fitzgerald
IPC分类号： H01L29/04
CPC分类号： H01L29/1054 , H01L21/823807 , H01L27/092 , H01L29/78 , H01L29/802
摘要： A structure including a compressively strained semiconductor layer, the compressively strained layer having a strain greater than or equal to 0.25%. A tensilely strained semiconductor layer may be formed over the compressively strained layer. The compressively strained layer is substantially planar, having a surface roughness characterized in (i) having an average wavelength greater than an average wavelength of a carrier in the compressively strained layer and/or (ii) having an average height less than 10 nm.
摘要翻译：包括压缩应变半导体层的结构，该压缩应变层具有大于或等于0.25％的应变。可以在压缩应变层上形成拉伸应变半导体层。压缩应变层基本上是平面的，具有表面粗糙度，其特征在于（i）平均波长大于压缩应变层中的载体的平均波长，和/或（ii）平均高度小于10nm。

3. 发明申请

US20090114902A1 TENSILE STRAINED GE FOR ELECTRONIC AND OPTOELECTRONIC APPLICATIONS 有权
标题翻译：电子和光电应用的拉伸应变通道
公开(公告)号：US20090114902A1
公开(公告)日：2009-05-07
申请号：US12265976
申请日：2008-11-06
申请人： Yu Bai , Minjoo L. Lee , Eugene A. Fitzgerald
发明人： Yu Bai , Minjoo L. Lee , Eugene A. Fitzgerald
IPC分类号： H01L29/15 , H01L21/20
CPC分类号： H01L21/0251 , B82Y10/00 , H01L21/02395 , H01L21/0245 , H01L21/02452 , H01L21/02463 , H01L21/02532 , H01L21/02535 , H01L29/1054 , Y10S438/933 , Y10S438/938
摘要： A semiconductor structure is provided. The semiconductor structure includes one or more III-IV material-based semiconductor layers. A tensile-strained Ge layer is formed on the one or more a III-IV material-based semiconductor layers. The tensile-strained Ge layer is produced through lattice-mismatched heteroepitaxy on the one or more a III-IV material-based semiconductor layers.
摘要翻译：提供半导体结构。半导体结构包括一个或多个III-IV材料基半导体层。在一个或多个III-IV材料基半导体层上形成拉伸应变Ge层。拉伸应变Ge层通过在一个或多个III-IV材料基半导体层上的晶格失配的异质外延产生。

4. 发明授权

US07301180B2 Structure and method for a high-speed semiconductor device having a Ge channel layer 有权
标题翻译：具有Ge沟道层的高速半导体器件的结构和方法
公开(公告)号：US07301180B2
公开(公告)日：2007-11-27
申请号：US10173986
申请日：2002-06-18
申请人： Minjoo L. Lee , Christopher W. Leitz , Eugene A. Fitzgerald
发明人： Minjoo L. Lee , Christopher W. Leitz , Eugene A. Fitzgerald
IPC分类号： H01L31/0328
CPC分类号： H01L29/78696 , H01L29/1054 , H01L29/78684
摘要： The invention provides semiconductor structure comprising a strained Ge channel layer, and a gate dielectric disposed over the strained Ge channel layer. In one aspect of the invention, a strained Ge channel MOSFET is provided. The strained Ge channel MOSFET includes a relaxed SiGe virtual substrate with a Ge content between 50-95%, and a strained Ge channel formed on the virtual substrate. A gate structure is formed upon the strained Ge channel, whereupon a MOSFET is formed with increased performance over bulk Si. In another embodiment of the invention, a semiconductor structure comprising a relaxed Ge channel layer and a virtual substrate, wherein the relaxed Ge channel layer is disposed above the virtual substrate. In a further aspect of the invention, a relaxed Ge channel MOSFET is provided. The method includes providing a relaxed virtual substrate with a Ge composition of approximately 100% and a relaxed Ge channel formed on the virtual substrate.
摘要翻译：本发明提供包括应变Ge沟道层的半导体结构和设置在应变Ge沟道层上的栅极电介质。在本发明的一个方面，提供了应变的Ge沟道MOSFET。应变Ge沟道MOSFET包括Ge含量在50-95％之间的弛豫SiGe虚拟衬底和形成在虚拟衬底上的应变Ge沟道。在应变Ge通道上形成栅极结构，于是形成具有在体积Si上增加的性能的MOSFET。在本发明的另一实施例中，包括松弛的Ge沟道层和虚拟衬底的半导体结构，其中放宽的Ge沟道层设置在虚拟衬底之上。在本发明的另一方面，提供了一种放宽的Ge沟道MOSFET。该方法包括提供具有约100％的Ge组成的松弛虚拟衬底和形成在虚拟衬底上的松弛Ge沟道。

5. 发明申请

US20080128747A1 STRUCTURE AND METHOD FOR A HIGH-SPEED SEMICONDUCTOR DEVICE HAVING A Ge CHANNEL LAYER 有权
标题翻译：具有Ge通道层的高速半导体器件的结构和方法
公开(公告)号：US20080128747A1
公开(公告)日：2008-06-05
申请号：US11877186
申请日：2007-10-23
申请人： Minjoo L. Lee , Christopher W. Leitz , Eugene A. Fitzgerald
发明人： Minjoo L. Lee , Christopher W. Leitz , Eugene A. Fitzgerald
IPC分类号： H01L29/778 , H01L21/336
CPC分类号： H01L29/78696 , H01L29/1054 , H01L29/78684
摘要： The invention provides semiconductor structure comprising a strained Ge channel layer, and a gate dielectric disposed over the strained Ge channel layer. In one aspect of the invention, a strained Ge channel MOSFET is provided. The strained Ge channel MOSFET includes a relaxed SiGe virtual substrate with a Ge content between 50-95%, and a strained Ge channel formed on the virtual substrate. A gate structure is formed upon the strained Ge channel, whereupon a MOSFET is formed with increased performance over bulk Si. In another embodiment of the invention, a semiconductor structure comprising a relaxed Ge channel layer and a virtual substrate, wherein the relaxed Ge channel layer is disposed above the virtual substrate. In a further aspect of the invention, a relaxed Ge channel MOSFET is provided. The method includes providing a relaxed virtual substrate with a Ge composition of approximately 100% and a relaxed Ge channel formed on the virtual substrate.
摘要翻译：本发明提供包括应变Ge沟道层的半导体结构和设置在应变Ge沟道层上的栅极电介质。在本发明的一个方面，提供了应变的Ge沟道MOSFET。应变Ge沟道MOSFET包括Ge含量在50-95％之间的弛豫SiGe虚拟衬底和形成在虚拟衬底上的应变Ge沟道。在应变Ge通道上形成栅极结构，于是形成具有在体积Si上增加的性能的MOSFET。在本发明的另一实施例中，包括松弛的Ge沟道层和虚拟衬底的半导体结构，其中放宽的Ge沟道层设置在虚拟衬底之上。在本发明的另一方面，提供了一种放宽的Ge沟道MOSFET。该方法包括提供具有约100％的Ge组成的松弛虚拟衬底和形成在虚拟衬底上的松弛Ge沟道。

6. 发明授权

US07005668B2 Method for improving hole mobility enhancement in strained silicon p-type MOSFETS 有权
标题翻译：用于改善应变硅p型MOSFET的空穴迁移率增强的方法
公开(公告)号：US07005668B2
公开(公告)日：2006-02-28
申请号：US10603712
申请日：2003-06-25
申请人： Minjoo L. Lee , Eugene A. Fitzgerald
发明人： Minjoo L. Lee , Eugene A. Fitzgerald
IPC分类号： H01L29/06
CPC分类号： H01L29/1054 , H01L29/165
摘要： A method of forming a MOSFET device is provided. The method includes providing a substrate. The method includes forming on the substrate a relaxed SiGe layer having a Ge content between 0.51 and 0.80. Furthermore, the method includes depositing on the relaxed SiGe layer a ε-Si layer.
摘要翻译：提供了一种形成MOSFET器件的方法。该方法包括提供基板。该方法包括在衬底上形成Ge含量在0.51和0.80之间的松弛的SiGe层。此外，该方法包括在松弛的SiGe层上沉积ε-Si层。

7. 发明授权

US08063413B2 Tensile strained GE for electronic and optoelectronic applications 有权
标题翻译：电子和光电应用的拉伸应变GE
公开(公告)号：US08063413B2
公开(公告)日：2011-11-22
申请号：US12265976
申请日：2008-11-06
申请人： Yu Bai , Minjoo L. Lee , Eugene A. Fitzgerald
发明人： Yu Bai , Minjoo L. Lee , Eugene A. Fitzgerald
IPC分类号： H01L29/15
CPC分类号： H01L21/0251 , B82Y10/00 , H01L21/02395 , H01L21/0245 , H01L21/02452 , H01L21/02463 , H01L21/02532 , H01L21/02535 , H01L29/1054 , Y10S438/933 , Y10S438/938
摘要： A semiconductor structure is provided. The semiconductor structure includes one or more III-IV material-based semiconductor layers. A tensile-strained Ge layer is formed on the one or more a III-IV material-based semiconductor layers. The tensile-strained Ge layer is produced through lattice-mismatched heteroepitaxy on the one or more a III-IV material-based semiconductor layers.
摘要翻译：提供半导体结构。半导体结构包括一个或多个III-IV材料基半导体层。在一个或多个III-IV材料基半导体层上形成拉伸应变Ge层。拉伸应变Ge层通过在一个或多个III-IV材料基半导体层上的晶格失配的异质外延产生。

8. 发明授权

US06916727B2 Enhancement of P-type metal-oxide-semiconductor field effect transistors 失效
标题翻译： P型金属氧化物半导体场效应晶体管的增强
公开(公告)号：US06916727B2
公开(公告)日：2005-07-12
申请号：US10177571
申请日：2002-06-21
申请人： Christopher W. Leitz , Minjoo L. Lee , Eugene A. Fitzgerald
发明人： Christopher W. Leitz , Minjoo L. Lee , Eugene A. Fitzgerald
IPC分类号： H01L21/20 , H01L21/8238 , H01L27/092 , H01L29/10 , H01L29/78 , H01L29/80
CPC分类号： H01L29/1054 , H01L21/823807 , H01L27/092 , H01L29/802
摘要： A structure includes a tensile strained layer disposed over a substrate, the tensile strained layer having a first thickness. A compressed layer is disposed between the tensile strained layer and the substrate, the compressed layer having a second thickness. The first and second thicknesses are selected to define a first carrier mobility in the tensile strained layer and a second carrier mobility in the compressed layer.
摘要翻译：一种结构包括设置在基底上的拉伸应变层，拉伸应变层具有第一厚度。压缩层设置在拉伸应变层和基底之间，压缩层具有第二厚度。选择第一和第二厚度以限定拉伸应变层中的第一载流子迁移率和压缩层中的第二载流子迁移率。

9. 发明授权

US06730551B2 Formation of planar strained layers 失效
标题翻译：平面应变层的形成
公开(公告)号：US06730551B2
公开(公告)日：2004-05-04
申请号：US10211126
申请日：2002-08-02
申请人： Minjoo L. Lee , Christopher W. Leitz , Eugene A. Fitzgerald
发明人： Minjoo L. Lee , Christopher W. Leitz , Eugene A. Fitzgerald
IPC分类号： H01L21337
CPC分类号： H01L29/1054 , H01L21/823807 , H01L27/092 , H01L29/78 , H01L29/802
摘要： A structure and a method for forming the structure, the method including forming a compressively strained semiconductor layer, the compressively strained layer having a strain greater than or equal to 0.25%. A tensilely strained semiconductor layer is formed over the compressively strained layer. The compressively strained layer is substantially planar, having a surface roughness characterized in (i) having an average wavelength greater than an average wavelength of a carrier in the compressively strained layer or (ii) having an average height less than 10 nm.
摘要翻译：一种用于形成结构的结构和方法，所述方法包括形成压缩应变半导体层，所述压应变层具有大于或等于0.25％的应变。在压缩应变层上形成拉伸应变半导体层。压缩应变层基本上是平面的，具有表面粗糙度，其特征在于：（i）平均波长大于压缩应变层中的载体的平均波长或（ii）平均高度小于10nm。

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