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1. 发明申请

US20160281225A1 PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PE-CVD) APPARATUS AND METHOD OF OPERATING THE SAME 审中-公开
标题翻译：等离子体增强化学蒸气沉积（PE-CVD）装置及其操作方法
公开(公告)号：US20160281225A1
公开(公告)日：2016-09-29
申请号：US14959333
申请日：2015-12-04
申请人： Minjong KIM , Jung-soo YOON , Jang-Hee LEE , Jongwon HONG
发明人： Minjong KIM , Jung-soo YOON , Jang-Hee LEE , Jongwon HONG
IPC分类号： C23C16/455 , C23C16/50
CPC分类号： C23C16/455 , C23C16/505 , H01J37/3244 , H01J37/32623 , H01J37/32633
摘要： A deposition apparatus includes a chuck in a process chamber, the chuck having a top surface on which a substrate is loaded, a showerhead disposed over the chuck, and a fence extension disposed in the process chamber. Plasma is generated in a space between the showerhead and the loaded substrate during a deposition process. The fence extension at least partially confines the plasma in the space during the deposition process, thereby enabling improved thickness uniformity and reliability of a layer deposited on the loaded substrate during the deposition process.
摘要翻译：沉积设备包括处理室中的卡盘，卡盘具有其上装载有基底的顶表面，设置在卡盘上方的喷头和设置在处理室中的护栏延伸部。在沉积过程中，等离子体在喷淋头和装载的基板之间的空间中产生。栅栏延伸部在沉积工艺期间至少部分地将等离子体限制在空间中，从而能够在沉积工艺期间改善沉积在装载的衬底上的层的厚度均匀性和可靠性。

2. 发明申请

US20160064193A1 SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译：半导体制造装置及使用该半导体器件的半导体器件的制造方法
公开(公告)号：US20160064193A1
公开(公告)日：2016-03-03
申请号：US14734183
申请日：2015-06-09
申请人： Hogon KIM , Hyunsu KIM , Jang-Hee LEE , Gilheyun CHOI , Jongwon HONG
发明人： Hogon KIM , Hyunsu KIM , Jang-Hee LEE , Gilheyun CHOI , Jongwon HONG
IPC分类号： H01J37/32
CPC分类号： H01J37/32165 , H01J37/32091 , H01J37/32174
摘要： A semiconductor manufacturing apparatus includes a lower electrode, an upper electrode, first and second high-frequency power sources, and a controller. The lower electrode is disposed in a process chamber, and the upper electrode is disposed over the lower electrode in the process chamber. The first high-frequency power source is connected to one of the lower electrode and the upper electrode, and the second high-frequency power source is connected to one of the lower electrode and the upper electrode. The controller is connected to the first and second high-frequency power sources. The first high-frequency power source generates a first high-frequency power used to perform a first capacitively coupled plasma (CCP) process. The second high-frequency power source generates a second high-frequency power used to perform a second CCP process. The controller controls the second high-frequency power source to interrupt the second high-frequency power during the first CCP process.
摘要翻译：半导体制造装置包括下电极，上电极，第一高频电源和第二高频电源以及控制器。下电极设置在处理室中，上电极设置在处理室中的下电极之上。第一高频电源连接到下电极和上电极中的一个，第二高频电源连接到下电极和上电极之一。控制器连接到第一和第二高频电源。第一高频电源产生用于执行第一电容耦合等离子体（CCP）过程的第一高频功率。第二高频电源产生用于执行第二CCP处理的第二高频电源。控制器控制第二高频电源，以在第一CCP过程中中断第二高频电源。

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