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1. 发明授权

US06214731B1 Copper metalization with improved electromigration resistance 有权
标题翻译：铜金属化具有改善的电迁移率
公开(公告)号：US06214731B1
公开(公告)日：2001-04-10
申请号：US09442771
申请日：1999-11-18
申请人： Takeshi Nogami , Minh Van Ngo , Shekhar Pramanick
发明人： Takeshi Nogami , Minh Van Ngo , Shekhar Pramanick
IPC分类号： H01L2144
CPC分类号： H01L21/76856 , H01L21/76843 , H01L21/76855 , H01L21/76877 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Cu interconnection patterns with improved electromigration resistance are formed by depositing a barrier metal layer, such as W or WN, to line an opening in a dielectric layer. The exposed surface of the deposited barrier metal layer is treated with silane or dichlorosaline to form a thin silicon layer thereon. Cu is then deposited to fill the opening and reacted with the thin silicon layer to form a thin layer of Cu silicide at the interface between Cu and the barrier metal layer, thereby reducing the interface defect density and improving electromigration resistance.
摘要翻译：具有改善的电迁移电阻的Cu互连图案通过沉积阻挡金属层（例如W或WN）来形成，以对电介质层中的开口进行排列。沉积的阻挡金属层的暴露表面用硅烷或二氯苯胺处理以在其上形成薄硅层。然后沉积Cu以填充开口并与薄硅层反应以在Cu和阻挡金属层之间的界面处形成Cu硅化物的薄层，从而降低界面缺陷密度并提高电迁移阻力。

2. 发明授权

US6165894A Method of reliably capping copper interconnects 有权
标题翻译：铜互连可靠封盖的方法
公开(公告)号：US6165894A
公开(公告)日：2000-12-26
申请号：US131872
申请日：1998-08-10
申请人： Shekhar Pramanick , Takeshi Nogami , Minh Van Ngo
发明人： Shekhar Pramanick , Takeshi Nogami , Minh Van Ngo
IPC分类号： H01L21/768 , H01L23/532 , H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： H01L21/76886 , H01L21/76834 , H01L21/76862 , H01L21/76877 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The adhesion of a diffusion barrier or capping layer to a Cu or Cu alloy interconnect member is significantly enhanced by treating the exposed surface of the Cu or Cu alloy interconnect member with an ammonia plasma followed by depositing the diffusion barrier layer on the treated surface. Embodiments include electroplating or electroless plating Cu or a Cu alloy to fill a damascene opening in a dielectric interlayer, chemical mechanical polishing, treating the exposed surface of the Cu/Cu alloy interconnect with an ammonia plasma, and depositing a silicon nitride diffusion barrier layer directly on the plasma treated surface.
摘要翻译：通过用氨等离子体处理Cu或Cu合金互连构件的暴露表面，然后在经处理的表面上沉积扩散阻挡层，扩散阻挡层或覆盖层对Cu或Cu合金互连构件的粘附性显着增强。实施例包括电镀或化学镀Cu或Cu合金以填充介电中间层中的镶嵌开口，化学机械抛光，用氨等离子体处理Cu / Cu合金互连的暴露表面，并直接沉积氮化硅扩散阻挡层在等离子体处理的表面上。

3. 发明授权

US06660634B1 Method of forming reliable capped copper interconnects 有权
标题翻译：形成可靠封盖铜互连的方法
公开(公告)号：US06660634B1
公开(公告)日：2003-12-09
申请号：US10291612
申请日：2002-11-12
申请人： Minh Van Ngo , Shekhar Pramanick , Takeshi Nogami
发明人： Minh Van Ngo , Shekhar Pramanick , Takeshi Nogami
IPC分类号： H01L2144
CPC分类号： H01L21/76862 , H01L21/76801 , H01L21/76877 , H01L21/76886 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , Y10S438/902 , Y10S438/906 , H01L2924/00
摘要： The adhesion of a diffusion barrier or capping layer to a Cu or Cu alloy interconnect member is significantly enhanced by treating the exposed surface of the Cu or Cu alloy interconnect member: (a) under plasma conditions with ammonia and silane or dichlorosilane to form a copper silicide layer thereon; or (b) with an ammonia plasma followed by reaction with silane or dichlorosilane to form a copper silicide layer thereon. The diffusion barrier layer is then deposited on the copper silicide layer. Embodiments include electroplating or electroless plating Cu or a Cu alloy to fill a damascene opening in a dielectric interlayer, chemical mechanical polishing, then treating the exposed surface of the Cu/Cu alloy interconnect to form the copper silicide layer thereon, and depositing a silicon nitride diffusion barrier layer on the copper silicide layer.
摘要翻译：扩散阻挡层或覆盖层对Cu或Cu合金互连构件的粘附通过处理Cu或Cu合金互连构件的暴露表面而显着增强：（a）在等离子体条件下用氨和硅烷或二氯硅烷形成铜硅化物层; 或（b）与氨等离子体接触，然后与硅烷或二氯硅烷反应，在其上形成硅化铜层。然后将扩散阻挡层沉积在硅化铜层上。实施例包括电镀或化学镀Cu或Cu合金以填充介电中间层中的镶嵌开口，化学机械抛光，然后处理Cu / Cu合金互连的暴露表面以在其上形成硅化铜层，并沉积氮化硅扩散阻挡层在硅化铜层上。

4. 发明授权

US06472755B1 Semiconductor device comprising copper interconnects with reduced in-line copper diffusion 有权
标题翻译：包括具有减少的在线铜扩散的铜互连的半导体器件
公开(公告)号：US06472755B1
公开(公告)日：2002-10-29
申请号：US09688928
申请日：2000-10-17
申请人： Minh Van Ngo , Takeshi Nogami
发明人： Minh Van Ngo , Takeshi Nogami
IPC分类号： H01L2348
CPC分类号： H01L23/53238 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L21/76883 , H01L23/53233 , H01L2924/0002 , H01L2924/00
摘要： Cu diffusion between Cu and Cu alloy interconnect members, e.g., lines, in a silicon oxide inter-layer dielectric is avoided or substantially reduced by converting an upper portion of the silicon oxide inter-layer dielectric between neighboring lines to silicon oxynitride and then depositing a capping layer. Embodiments include filling damascene trenches in a silicon oxide inter-layer dielectric with Cu or a Cu alloy, CMP to effect planarization such that the upper surfaces of the lines are substantially coplanar with the upper surface of the inter-layer dielectric and treating the exposed surfaces with a high strength ammonia plasma to ion bombard the exposed inter line silicon oxide with nitrogen atoms, thereby converting the upper portion to silicon oxynitride, while simultaneously removing or substantially reducing surface oxides on the lines. A silicon nitride capping layer is then deposited.
摘要翻译：通过将相邻线路之间的氧化硅层间电介质的上部部分转换为氮氧化硅，然后沉积氧化硅层，从而避免或基本上减少氧化硅层间电介质中Cu和Cu合金互连构件（例如线）之间的Cu扩散盖层实施例包括用Cu或Cu合金填充氧化硅层间电介质中的镶嵌沟槽CMP，以实现平面化，使得线的上表面与层间电介质的上表面基本上共面并且处理暴露表面用高强度氨等离子体离子轰击具有氮原子的暴露的线间氧化硅，从而将上部转化为氮氧化硅，同时除去或显着还原线上的表面氧化物。然后沉积氮化硅覆盖层。

5. 发明授权

US06335283B1 Method of reducing in-line copper diffusion 有权
标题翻译：减少在线铜扩散的方法
公开(公告)号：US06335283B1
公开(公告)日：2002-01-01
申请号：US09477719
申请日：2000-01-05
申请人： Minh Van Ngo , Takeshi Nogami
发明人： Minh Van Ngo , Takeshi Nogami
IPC分类号： H01L2144
CPC分类号： H01L21/76834 , H01L21/76826 , H01L21/76829 , H01L21/76883
摘要： Cu diffusion between Cu and Cu alloy interconnect members, e.g., lines, in a silicon oxide inter-layer dielectric is avoided or substantially reduced by converting an upper portion of the silicon oxide inter-layer dielectric between neighboring lines to silicon oxynitride and then depositing a capping layer. Embodiments include filling damascene trenches in a silicon oxide inter-layer dielectric with Cu or a Cu alloy, CMP to effect planarization such that the upper surfaces of the lines are substantially coplanar with the upper surface of the inter-layer dielectric and treating the exposed surfaces with a nitrogen plasma of sufficient strength to ion bombard the exposed inter line silicon oxide with nitrogen, thereby converting the upper portion to silicon oxynitride, while simultaneously removing or substantially reducing surface oxides on the lines. A silicon nitride capping layer is then deposited.
摘要翻译：通过将相邻线路之间的氧化硅层间电介质的上部部分转换为氮氧化硅，然后沉积氧化硅层，从而避免或基本上减少氧化硅层间电介质中Cu和Cu合金互连构件（例如线）之间的Cu扩散盖层实施例包括用Cu或Cu合金填充氧化硅层间电介质中的镶嵌沟槽CMP，以实现平面化，使得线的上表面与层间电介质的上表面基本上共面并且处理暴露表面具有足够强度的氮等离子体用氮气轰击暴露的线间氧化硅，从而将上部部分转化为氮氧化硅，同时除去或基本上还原管线上的表面氧化物。然后沉积氮化硅覆盖层。

6. 发明授权

US06303505B1 Copper interconnect with improved electromigration resistance 失效
标题翻译：铜互连具有改善的电迁移阻力
公开(公告)号：US06303505B1
公开(公告)日：2001-10-16
申请号：US09112472
申请日：1998-07-09
申请人： Minh Van Ngo , Shekhar Pramanick , Takeshi Nogami
发明人： Minh Van Ngo , Shekhar Pramanick , Takeshi Nogami
IPC分类号： H01L2144
CPC分类号： H01L21/76849 , H01L21/76838 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Capping layer adhesion to a Cu or Cu alloy interconnect member is enhanced by treating the exposed surface of the Cu or Cu alloy interconnect member with a hydrogen plasma to substantially reduce oxides thereon, forming a thin layer of copper silicide on the treated surface and depositing the capping layer thereon. Embodiments include electroplating or electroless plating Cu or a Cu alloy to fill a damascene opening in a dielectric layer, chemical-mechianiical polishing, hydrogen plasma treatment, reacting the treated surface with silane or dichlorosilane to form a layer of copper silicide on the treated surface and depositing a silicon nitride capping layer on the thin copper silicide layer.
摘要翻译：通过用氢等离子体处理Cu或Cu合金互连构件的暴露表面以大大减少其上的氧化物，在处理过的表面上形成薄的硅化铜层，并沉积到Cu或Cu合金互连构件上，盖层。实施例包括电镀或化学镀Cu或Cu合金以填充电介质层中的镶嵌开口，化学机械抛光，氢等离子体处理，使经处理的表面与硅烷或二氯硅烷反应，以在被处理的表面上形成硅化铜层，在薄的硅化铜层上沉积氮化硅覆盖层。

7. 发明授权

US06211084B1 Method of forming reliable copper interconnects 失效
标题翻译：形成可靠铜互连的方法
公开(公告)号：US06211084B1
公开(公告)日：2001-04-03
申请号：US09112161
申请日：1998-07-09
申请人： Minh Van Ngo , Shekhar Pramanick , Takeshi Nogami
发明人： Minh Van Ngo , Shekhar Pramanick , Takeshi Nogami
IPC分类号： H01L2144
CPC分类号： H01L21/76849 , H01L21/76834 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The adhesion of a diffusion barrier or capping layer to Cu and/or Cu alloy interconnect members is significantly enhanced by treating the exposed surface of the Cu and/or Cu alloy interconnect members with a silane or dichlorosilane plasma to form a layer of copper silicide thereon prior to depositing the capping layer. Embodiments include electroplating or electroless plating Cu or a Cu alloy to fill a damascene opening in a dielectric interlayer, chemical mechanical polishing, treating the exposed surface of the Cu or Cu alloy interconnect member in a silane or dichlorosilane plasma to form the copper silicide layer and depositing a capping layer of silicon nitride thereon.
摘要翻译：通过用硅烷或二氯硅烷等离子体处理Cu和/或Cu合金互连构件的暴露表面以在其上形成硅化铜层，扩散阻挡层或覆盖层对Cu和/或Cu合金互连构件的粘附性显着增强在沉积覆盖层之前。实施例包括电镀或化学镀Cu或Cu合金以填充介电中间层中的镶嵌开口，化学机械抛光，处理硅烷或二氯硅烷等离子体中Cu或Cu合金互连构件的暴露表面以形成硅化铜层和在其上沉积氮化硅覆盖层。

8. 发明授权

US06235632B1 Tungsten plug formation 失效
标题翻译：钨塞形成
公开(公告)号：US06235632B1
公开(公告)日：2001-05-22
申请号：US09006495
申请日：1998-01-13
申请人： Takeshi Nogami , Guarionex Morales , Minh Van Ngo
发明人： Takeshi Nogami , Guarionex Morales , Minh Van Ngo
IPC分类号： H01L2144
CPC分类号： H01L21/76864 , H01L21/76841 , H01L21/76843 , H01L21/76855 , H01L21/76877 , H01L21/76895
摘要： In a preferred embodiment, there is disclosed a method of forming a tungsten plug at the via level. A metal line is formed in a top portion of a first insulating layer. A second insulating layer is formed on the first insulating layer and over an exposed surface of the metal line. An etching process is applied to a region of the second insulating layer formed over the exposed surface of the metal line to create a contact hole within the region. The metal line is exposed at the region. A tungsten nitride thin film is deposited over the second insulating layer and the exposed metal line. A blanket tungsten thin film is deposited to fill the contact hole and to form a planar layer successively to the depositing of the tungsten nitride thin film. The tungsten nitride thin film and the blanket tungsten thin film are chemically mechanically polished until the upper surface of the second insulating layer is exposed.
摘要翻译：在优选实施例中，公开了一种在通孔级形成钨丝塞的方法。金属线形成在第一绝缘层的顶部。在第一绝缘层上和金属线的暴露表面上形成第二绝缘层。对形成在金属线的暴露表面上的第二绝缘层的区域施加蚀刻处理，以在该区域内形成接触孔。金属线暴露在该地区。在第二绝缘层和暴露的金属线上沉积氮化钨薄膜。沉积覆盖的钨薄膜以填充接触孔并且连续地形成平坦层以沉积氮化钨薄膜。化学机械抛光氮化钨薄膜和覆盖钨薄膜，直到第二绝缘层的上表面露出。

9. 发明授权

US06492266B1 Method of forming reliable capped copper interconnects 失效
标题翻译：形成可靠封盖铜互连的方法
公开(公告)号：US06492266B1
公开(公告)日：2002-12-10
申请号：US09112158
申请日：1998-07-09
申请人： Minh Van Ngo , Shekhar Pramanick , Takeshi Nogami
发明人： Minh Van Ngo , Shekhar Pramanick , Takeshi Nogami
IPC分类号： H01L2144
CPC分类号： H01L21/76862 , H01L21/76801 , H01L21/76877 , H01L21/76886 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , Y10S438/902 , Y10S438/906 , H01L2924/00
摘要： The adhesion of a diffusion barrier or capping layer to a Cu or Cu alloy interconnect member is significantly enhanced by treating the exposed surface of the Cu or Cu alloy interconnect member: (a) under plasma conditions with ammonia and silane or dichlorosilane to form a copper silicide layer thereon; or (b) with an ammonia plasma followed by reaction with silane or dichlorosilane to form a copper silicide layer thereon. The diffusion barrier layer is then deposited on the copper suicide layer. Embodiments include electroplating or electroless plating Cu or a Cu alloy to fill a damascene opening in a dielectric interlayer, chemical mechanical polishing, then treating the exposed surface of the Cu/Cu alloy interconnect to form the copper silicide layer thereon, and depositing a silicon nitride diffusion barrier layer on the copper silicide layer.
摘要翻译：扩散阻挡层或覆盖层对Cu或Cu合金互连构件的粘附通过处理Cu或Cu合金互连构件的暴露表面而显着增强：（a）在等离子体条件下用氨和硅烷或二氯硅烷形成铜硅化物层; 或（b）与氨等离子体接触，然后与硅烷或二氯硅烷反应，在其上形成硅化铜层。然后将扩散阻挡层沉积在硅化硅层上。实施例包括电镀或化学镀Cu或Cu合金以填充介电中间层中的镶嵌开口，化学机械抛光，然后处理Cu / Cu合金互连的暴露表面以在其上形成硅化铜层，并沉积氮化硅扩散阻挡层在硅化铜层上。

10. 发明授权

US6146988A Method of making a semiconductor device comprising copper interconnects with reduced in-line copper diffusion 有权
标题翻译：制造具有减少的在线铜扩散的铜互连的半导体器件的方法
公开(公告)号：US6146988A
公开(公告)日：2000-11-14
申请号：US477820
申请日：2000-01-05
申请人： Minh Van Ngo , Takeshi Nogami
发明人： Minh Van Ngo , Takeshi Nogami
IPC分类号： H01L21/768 , H01L21/4763
CPC分类号： H01L21/76834 , H01L21/76826 , H01L21/76829 , H01L21/76883
摘要： Cu diffusion between Cu and Cu alloy interconnect members, e.g., lines, in a silicon oxide inter-layer dielectric is avoided or substantially reduced by converting an upper portion of the silicon oxide inter-layer dielectric between neighboring lines to silicon oxynitride and then depositing a capping layer. Embodiments include filling damascene trenches in a silicon oxide inter-layer dielectric with Cu or a Cu alloy, CMP to effect planarization such that the upper surfaces of the lines are substantially coplanar with the upper surface of the inter-layer dielectric and treating the exposed surfaces with a high strength ammonia plasma to ion bombard the exposed inter line silicon oxide with nitrogen atoms, thereby converting the upper portion to silicon oxynitride, while simultaneously removing or substantially reducing surface oxides on the lines. A silicon nitride capping layer is then deposited.
摘要翻译：通过将相邻线路之间的氧化硅层间电介质的上部部分转换为氮氧化硅，然后沉积氧化硅层，从而避免或基本上减少氧化硅层间电介质中Cu和Cu合金互连构件（例如线）之间的Cu扩散盖层实施例包括用Cu或Cu合金填充氧化硅层间电介质中的镶嵌沟槽CMP，以实现平面化，使得线的上表面与层间电介质的上表面基本上共面并且处理暴露表面用高强度氨等离子体离子轰击具有氮原子的暴露的线间氧化硅，从而将上部转化为氮氧化硅，同时除去或显着还原线上的表面氧化物。然后沉积氮化硅覆盖层。

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