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1. 发明申请

US20090001377A1 PIXEL STRUCTURE AND FABRICATION METHOD THEREOF 有权
标题翻译：像素结构和制造方法
公开(公告)号：US20090001377A1
公开(公告)日：2009-01-01
申请号：US11851392
申请日：2007-09-07
申请人： Ming-Yan Chen , Yi-Wei Chen , Yi-Sheng Cheng , Ying-Chi Liao
发明人： Ming-Yan Chen , Yi-Wei Chen , Yi-Sheng Cheng , Ying-Chi Liao
IPC分类号： H01L29/786 , H01L21/00
CPC分类号： H01L29/78621 , H01L27/1255 , H01L27/1288
摘要： A pixel structure and a fabrication method thereof are provided, wherein a semiconductor pattern and a data line are defined simultaneously by performing a half-tone or grey-tone masking process. In addition, a self-alignment manner is further adopted to fabricate a lightly doped region with symmetric lengths on two sides of a channel region through steps such as photoresist ashing and etching, so as to prevent the problem of misalignment of mask generated when a mask is used to define the lightly doped region in the conventional art. Furthermore, a source pattern and a drain pattern are made to directly contact a source region and a drain region of the semiconductor pattern, such that a process of fabricating a via is omitted. Besides, in the present invention, a common line pattern surrounding the peripheral of the pixel region is also formed to improve the aperture ratio of the pixel structure.
摘要翻译：提供一种像素结构及其制造方法，其中通过执行半色调或灰度色调掩蔽处理同时定义半导体图案和数据线。此外，进一步采用自对准方式，通过诸如光致抗蚀剂灰化和蚀刻的步骤在通道区域的两侧上制造具有对称长度的轻掺杂区域，以防止当掩模产生的掩模失配的问题用于定义传统技术中的轻掺杂区域。此外，使源极图案和漏极图案直接接触半导体图案的源极区域和漏极区域，从而省略了制造通孔的工艺。此外，在本发明中，还形成围绕像素区域的周边的公共线图案，以提高像素结构的开口率。

2. 发明授权

US07763942B2 Pixel structure 有权
标题翻译：像素结构
公开(公告)号：US07763942B2
公开(公告)日：2010-07-27
申请号：US11851392
申请日：2007-09-07
申请人： Ming-Yan Chen , Yi-Wei Chen , Yi-Sheng Cheng , Ying-Chi Liao
发明人： Ming-Yan Chen , Yi-Wei Chen , Yi-Sheng Cheng , Ying-Chi Liao
IPC分类号： H01L23/62 , H01L21/8238 , G02F1/1343
CPC分类号： H01L29/78621 , H01L27/1255 , H01L27/1288
摘要： A pixel structure and a fabrication method thereof are provided, wherein a semiconductor pattern and a data line are defined simultaneously by performing a half-tone or grey-tone masking process. In addition, a self-alignment manner is further adopted to fabricate a lightly doped region with symmetric lengths on two sides of a channel region through steps such as photoresist ashing and etching, so as to prevent the problem of misalignment of mask generated when a mask is used to define the lightly doped region in the conventional art. Furthermore, a source pattern and a drain pattern are made to directly contact a source region and a drain region of the semiconductor pattern, such that a process of fabricating a via is omitted. Besides, in the present invention, a common line pattern surrounding the peripheral of the pixel region is also formed to improve the aperture ratio of the pixel structure.
摘要翻译：提供一种像素结构及其制造方法，其中通过执行半色调或灰度色调掩蔽处理同时定义半导体图案和数据线。此外，进一步采用自对准方式，通过诸如光致抗蚀剂灰化和蚀刻的步骤在通道区域的两侧上制造具有对称长度的轻掺杂区域，以防止当掩模产生的掩模失配的问题用于定义传统技术中的轻掺杂区域。此外，使源极图案和漏极图案直接接触半导体图案的源极区域和漏极区域，从而省略了制造通孔的工艺。此外，在本发明中，还形成围绕像素区域的周边的公共线图案，以提高像素结构的开口率。

3. 发明授权

US07855112B2 Fabrication method of pixel structure 有权
标题翻译：像素结构的制作方法
公开(公告)号：US07855112B2
公开(公告)日：2010-12-21
申请号：US12779940
申请日：2010-05-13
申请人： Ming-Yan Chen , Yi-Wei Chen , Yi-Sheng Cheng , Ying-Chi Liao
发明人： Ming-Yan Chen , Yi-Wei Chen , Yi-Sheng Cheng , Ying-Chi Liao
IPC分类号： H01L21/8238 , H01L23/62
CPC分类号： H01L29/78621 , H01L27/1255 , H01L27/1288
摘要： A fabrication method of a pixel structure includes providing a substrate. A semiconductor layer and a first conductive layer are formed on the substrate in sequence and patterned to form a semiconductor pattern and a data line pattern. A gate insulation layer and a second conductive layer are formed on the substrate in sequence and patterned to form a gate pattern and a scan line pattern connected to each other. A source region, a drain region, a channel region, and a lightly doped region are formed in the semiconductor pattern. A third conductive layer formed on the substrate is patterned to form a source pattern and a drain pattern. A protective layer is formed on the substrate and patterned to form a contact window to expose the drain pattern. A pixel electrode electrically connected to the drain pattern through the contact window is formed on the protective layer.
摘要翻译：像素结构的制造方法包括提供基板。依次在基板上形成半导体层和第一导电层，并将其图案化以形成半导体图案和数据线图形。依次在基板上形成栅极绝缘层和第二导电层，并将其图案化以形成彼此连接的栅极图案和扫描线图案。在半导体图案中形成源极区，漏极区，沟道区和轻掺杂区。形成在衬底上的第三导电层被图案化以形成源图案和漏极图案。在衬底上形成保护层并图案化以形成接触窗口以暴露漏极图案。通过接触窗电连接到漏极图案的像素电极形成在保护层上。

4. 发明申请

US20100233859A1 FABRICATION METHOD OF PIXEL STRUCTURE 有权
标题翻译：像素结构的制造方法
公开(公告)号：US20100233859A1
公开(公告)日：2010-09-16
申请号：US12779940
申请日：2010-05-13
申请人： Ming-Yan Chen , Yi-Wei Chen , Yi-Sheng Cheng , Ying-Chi Liao
发明人： Ming-Yan Chen , Yi-Wei Chen , Yi-Sheng Cheng , Ying-Chi Liao
IPC分类号： H01L21/336
CPC分类号： H01L29/78621 , H01L27/1255 , H01L27/1288
摘要： A fabrication method of a pixel structure includes providing a substrate. A semiconductor layer and a first conductive layer are formed on the substrate in sequence and patterned to form a semiconductor pattern and a data line pattern. A gate insulation layer and a second conductive layer are formed on the substrate in sequence and patterned to form a gate pattern and a scan line pattern connected to each other. A source region, a drain region, a channel region, and a lightly doped region are formed in the semiconductor pattern. A third conductive layer formed on the substrate is patterned to form a source pattern and a drain pattern. A protective layer is formed on the substrate and patterned to form a contact window to expose the drain pattern. A pixel electrode electrically connected to the drain pattern through the contact window is formed on the protective layer.
摘要翻译：像素结构的制造方法包括提供基板。依次在基板上形成半导体层和第一导电层，并将其图案化以形成半导体图案和数据线图形。依次在基板上形成栅极绝缘层和第二导电层，并将其图案化以形成彼此连接的栅极图案和扫描线图案。在半导体图案中形成源极区，漏极区，沟道区和轻掺杂区。形成在衬底上的第三导电层被图案化以形成源图案和漏极图案。在衬底上形成保护层并图案化以形成接触窗口以暴露漏极图案。通过接触窗电连接到漏极图案的像素电极形成在保护层上。

5. 发明申请

US20080296581A1 Pixel structure and method for forming the same 审中-公开
标题翻译：像素结构及其形成方法
公开(公告)号：US20080296581A1
公开(公告)日：2008-12-04
申请号：US11892191
申请日：2007-08-21
申请人： Chih-Wei Chao , Yi-Sheng Cheng , Kun-Chih Lin , Yi-Wei Chen
发明人： Chih-Wei Chao , Yi-Sheng Cheng , Kun-Chih Lin , Yi-Wei Chen
IPC分类号： H01L21/00 , H01L29/786
CPC分类号： H01L27/1248 , G02F1/136213 , H01L27/124 , H01L27/1255 , H01L29/78621
摘要： A pixel structure including at least one thin-film transistor, at least one storage capacitor, a patterned first metal layer, an interlayer dielectric layer, a passivation layer, and a patterned pixel electrode is provided. The storage capacitor is electrically connected to the thin-film transistor. The patterned first metal layer is covered by the interlayer dielectric layer. The thin-film transistor and the interlayer dielectric layer are covered by the passivation layer, wherein an opening is formed in the passivation layer and a part of the interlayer dielectric layer. The patterned pixel electrode is formed on a part of the passivation layer and a part of the interlayer dielectric layer and contacted with a part of the passivation layer and a part of the interlayer dielectric layer. The storage capacitor includes the patterned first metal layer, a remained part of the interlayer dielectric layer located under the opening, and the patterned pixel electrode.
摘要翻译：提供了包括至少一个薄膜晶体管，至少一个存储电容器，图案化第一金属层，层间介电层，钝化层和图案化像素电极的像素结构。存储电容器电连接到薄膜晶体管。图案化的第一金属层被层间介电层覆盖。薄膜晶体管和层间电介质层被钝化层覆盖，其中在钝化层中形成一个开口和一部分层间电介质层。图案化的像素电极形成在钝化层的一部分和层间电介质层的一部分上，并与钝化层的一部分和层间电介质层的一部分接触。存储电容器包括图案化的第一金属层，位于开口下方的层间介电层的剩余部分和图案化的像素电极。

6. 发明授权

US07601552B2 Semiconductor structure of liquid crystal display and manufacturing method thereof 有权
标题翻译：液晶显示器的半导体结构及其制造方法
公开(公告)号：US07601552B2
公开(公告)日：2009-10-13
申请号：US12017162
申请日：2008-01-21
申请人： Yi-Sheng Cheng , Ta-Wei Chiu
发明人： Yi-Sheng Cheng , Ta-Wei Chiu
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , H01L27/1255
摘要： A semiconductor structure of a liquid crystal display and the manufacturing method thereof are described. The manufacturing method includes the following steps. A patterned polysilicon layer and a first dielectric layer are formed on a substrate. A first patterned metal layer is formed to construct a gate electrode and a capacitor electrode. An ion implantation is conducted on the polysilicon layer to form drain and source electrodes. A second dielectric layer and a second patterned metal layer are formed thereon. Sequentially, a third dielectric layer is formed thereon. A plurality of via openings are formed by a patterned photoresist layer, and a third metal layer is formed thereon and filled into the via openings. The patterned photoresist layer and the redundant third metal layer are stripped from the substrate to form via plugs in the via openings. A patterned transparent conductive layer is formed thereon to connect the via plugs.
摘要翻译：对液晶显示器的半导体结构及其制造方法进行说明。该制造方法包括以下步骤。在基板上形成图形化的多晶硅层和第一介质层。形成第一图案化金属层以构成栅电极和电容器电极。在多晶硅层上进行离子注入以形成漏极和源极。在其上形成第二介电层和第二图案化金属层。接着，在其上形成第三电介质层。通过图案化的光致抗蚀剂层形成多个通路孔，并且在其上形成第三金属层并填充到通孔中。图案化的光致抗蚀剂层和冗余的第三金属层从基板剥离以在通孔开口中形成通孔塞。在其上形成图案化的透明导电层以连接通孔塞。

7. 发明申请

US20080251790A1 Pixel, a Storage Capacitor, and a Method for Forming the Same 有权
标题翻译：像素，存储电容器及其形成方法
公开(公告)号：US20080251790A1
公开(公告)日：2008-10-16
申请号：US12048631
申请日：2008-03-14
申请人： Yi-Sheng Cheng
发明人： Yi-Sheng Cheng
IPC分类号： H01L27/12 , H01L29/94 , H01L21/84
CPC分类号： H01L27/1255 , G02F1/136213 , H01L27/1214 , H01L27/1259 , H01L27/1288 , H01L27/13
摘要： A pixel, a storage capacitor, and a method for forming the same. The storage capacitor formed on a substrate comprises a semiconductor layer, a first dielectric layer, a first conductive layer, a second dielectric layer and a second conductive layer. The semiconductor layer is formed on the substrate wherein the semiconductor layer and the substrate are covered by the first dielectric layer. The first conductive layer is formed on a part of the first dielectric layer. The second dielectric layer is formed on the first conductive layer, and the lateral side of the stacking structure including the second dielectric layer and the first conductive layer has a taper shaped. The second conductive layer is formed on a part of the second dielectric layer.
摘要翻译：像素，存储电容器及其形成方法。形成在基板上的存储电容器包括半导体层，第一介电层，第一导电层，第二介电层和第二导电层。半导体层形成在基板上，其中半导体层和基板被第一介电层覆盖。第一导电层形成在第一介电层的一部分上。第二电介质层形成在第一导电层上，并且包括第二电介质层和第一导电层的堆叠结构的横向侧具有锥形。第二导电层形成在第二电介质层的一部分上。

8. 发明申请

US20080225192A1 Pixel Structure of LCD and Fabrication Method Thereof 有权
标题翻译： LCD的像素结构及其制作方法
公开(公告)号：US20080225192A1
公开(公告)日：2008-09-18
申请号：US12019701
申请日：2008-01-25
申请人： Yi-Sheng Cheng , Chih-Wei Chao
发明人： Yi-Sheng Cheng , Chih-Wei Chao
IPC分类号： G02F1/1343 , H01L21/84
CPC分类号： H01L27/124 , G02F1/136209 , G02F1/136213 , G02F2001/136231 , H01L27/1255 , H01L27/1288
摘要： Five photomasks are used in fabricating the pixel structure of an LCD. In this pixel structure, a metal light-shielding layer is formed under the thin film transistor to reduce photocurrent. Furthermore, a metal conductive wire is used to increase the storage capacity of the storage capacitor.
摘要翻译：五个光掩模用于制造LCD的像素结构。在该像素结构中，在薄膜晶体管的下方形成金属遮光层，以减少光电流。此外，使用金属导线来增加存储电容器的存储容量。

9. 发明授权

US08018013B2 Pixel structure and method for manufacturing thereof 有权
标题翻译：像素结构及其制造方法
公开(公告)号：US08018013B2
公开(公告)日：2011-09-13
申请号：US11740937
申请日：2007-04-27
申请人： Hsiang-Lin Lin , Ching-Yu Tsai , Yi-Sheng Cheng , Kuo-Yu Huang
发明人： Hsiang-Lin Lin , Ching-Yu Tsai , Yi-Sheng Cheng , Kuo-Yu Huang
IPC分类号： H01L29/72
CPC分类号： H01L27/1288 , G09G3/3648 , G09G2300/0465 , H01L27/124 , H01L27/1255 , H01L29/0657 , H01L29/41733 , H01L29/42384
摘要： A pixel structure including a scan line, a data line, an active device, a shielding electrode, and a pixel electrode is provided on a substrate. The data line includes an upper conductive wire and a bottom conductive wire. The upper conductive wire is disposed over and across the scan line. The bottom conductive wire is electrically connected to the upper conductive wire. The active device is electrically connected to the scan line and the upper conductive wire. The shielding electrode is disposed over the bottom conductive wire. The pixel electrode disposed over the shielding electrode is electrically connected to the active device. In addition, parts of the pixel electrode and parts of the shielding electrode form a storage capacitor.
摘要翻译：在基板上设置包括扫描线，数据线，有源器件，屏蔽电极和像素电极的像素结构。数据线包括上导线和底导线。上导线设置在扫描线上方并穿过扫描线。底部导线与上导电线电连接。有源器件电连接到扫描线和上导电线。屏蔽电极设置在底部导线上。设置在屏蔽电极上方的像素电极与有源器件电连接。此外，像素电极的一部分和屏蔽电极的一部分形成存储电容器。

10. 发明申请

US20100285618A1 Pixel Structure of LCD and Fabrication Method Thereof 有权
标题翻译： LCD的像素结构及其制作方法
公开(公告)号：US20100285618A1
公开(公告)日：2010-11-11
申请号：US12844166
申请日：2010-07-27
申请人： Yi-Sheng Cheng , Chih-Wei Chao
发明人： Yi-Sheng Cheng , Chih-Wei Chao
IPC分类号： H01L33/00 , H01L21/02
CPC分类号： G02F1/136209 , G02F1/136213 , H01L27/1255
摘要： In this pixel structure, a metal layer/a dielectric layer/a heavily doped silicon layer constitutes a bottom electrode/a capacitor dielectric layer/a top electrode of a storage capacitor. At the same time, a metal shielding layer is formed under the thin film transistor to decrease photo-leakage-current.
摘要翻译：在该像素结构中，金属层/电介质层/重掺杂硅层构成存储电容器的底部电极/电容器电介质层/顶部电极。同时，在薄膜晶体管下方形成金属屏蔽层，以降低光漏电流。

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