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1. 发明申请

US20120115288A1 METHOD FOR FABRICATING ACTIVE DEVICE ARRAY SUBSTRATE 有权
标题翻译：用于制作主动装置阵列基板的方法
公开(公告)号：US20120115288A1
公开(公告)日：2012-05-10
申请号：US13349586
申请日：2012-01-13
申请人： Ming-Wei Sun , Chen-Yueh Li , Yu-Cheng Chen , Chia-Tien Peng
发明人： Ming-Wei Sun , Chen-Yueh Li , Yu-Cheng Chen , Chia-Tien Peng
IPC分类号： H01L21/336
CPC分类号： H01L27/14692 , H01L27/1214 , H01L27/1288 , H01L27/14609 , H01L27/14623 , H01L27/14645
摘要： A method for fabricating an active device array substrate is provided. A first patterned semiconductor layer, a gate insulator, a first patterned conductive layer and a first dielectric layer is sequentially formed on a substrate. First contact holes exposing the first patterned semiconductor layer are formed in the first dielectric layer and the gate insulator. A second patterned conductive layer and a second patterned semiconductor layer disposed thereon are simultaneously formed on the first dielectric layer. The second conductive layer includes contact conductors and a bottom electrode. The second patterned semiconductor layer includes an active layer. A second dielectric layer having second contact holes is formed on the first dielectric layer, wherein a portion of the second contact holes exposes the active layer. A third patterned conductive layer electrically connected to the active layer through a portion of the second contact holes is formed on the second dielectric layer.
摘要翻译：提供一种用于制造有源器件阵列衬底的方法。第一图案化半导体层，栅极绝缘体，第一图案化导电层和第一介电层依次形成在衬底上。暴露第一图案化半导体层的第一接触孔形成在第一介电层和栅极绝缘体中。第一图案化导电层和设置在其上的第二图案化半导体层同时形成在第一介电层上。第二导电层包括接触导体和底部电极。第二图案化半导体层包括有源层。具有第二接触孔的第二电介质层形成在第一电介质层上，其中一部分第二接触孔露出有源层。通过第二接触孔的一部分电连接到有源层的第三图案化导电层形成在第二介电层上。

2. 发明授权

US08143117B2 Active device array substrate and method for fabricating the same 有权
标题翻译：有源器件阵列衬底及其制造方法
公开(公告)号：US08143117B2
公开(公告)日：2012-03-27
申请号：US12539614
申请日：2009-08-12
申请人： Ming-Wei Sun , Chen-Yueh Li , Yu-Cheng Chen , Chia-Tien Peng
发明人： Ming-Wei Sun , Chen-Yueh Li , Yu-Cheng Chen , Chia-Tien Peng
IPC分类号： H01L21/336 , H01L21/8232 , H01L27/085
CPC分类号： H01L27/14692 , H01L27/1214 , H01L27/1288 , H01L27/14609 , H01L27/14623 , H01L27/14645
摘要： A method for fabricating an active device array substrate is provided. A first patterned semiconductor layer, a gate insulator, a first patterned conductive layer and a first dielectric layer is sequentially formed on a substrate. First contact holes exposing the first patterned semiconductor layer are formed in the first dielectric layer and the gate insulator. A second patterned conductive layer and a second patterned semiconductor layer disposed thereon are simultaneously formed on the first dielectric layer. The second conductive layer includes contact conductors and a bottom electrode. The second patterned semiconductor layer includes an active layer. A second dielectric layer having second contact holes is formed on the first dielectric layer, wherein a portion of the second contact holes exposes the active layer. A third patterned conductive layer electrically connected to the active layer through a portion of the second contact holes is formed on the second dielectric layer.
摘要翻译：提供一种用于制造有源器件阵列衬底的方法。第一图案化半导体层，栅极绝缘体，第一图案化导电层和第一介电层依次形成在衬底上。暴露第一图案化半导体层的第一接触孔形成在第一介电层和栅极绝缘体中。第一图案化导电层和设置在其上的第二图案化半导体层同时形成在第一介电层上。第二导电层包括接触导体和底部电极。第二图案化半导体层包括有源层。具有第二接触孔的第二电介质层形成在第一电介质层上，其中一部分第二接触孔露出有源层。通过第二接触孔的一部分电连接到有源层的第三图案化导电层形成在第二介电层上。

3. 发明申请

US20100230763A1 ACTIVE DEVICE ARRAY SUBSTRATE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：主动装置阵列基板及其制造方法
公开(公告)号：US20100230763A1
公开(公告)日：2010-09-16
申请号：US12539614
申请日：2009-08-12
申请人： Ming-Wei Sun , Chen-Yueh Li , Yu-Cheng Chen , Chia-Tien Peng
发明人： Ming-Wei Sun , Chen-Yueh Li , Yu-Cheng Chen , Chia-Tien Peng
IPC分类号： H01L27/085 , H01L21/8232 , H01L21/336
CPC分类号： H01L27/14692 , H01L27/1214 , H01L27/1288 , H01L27/14609 , H01L27/14623 , H01L27/14645
摘要： A method for fabricating an active device array substrate is provided. A first patterned semiconductor layer, a gate insulator, a first patterned conductive layer and a first dielectric layer is sequentially formed on a substrate. First contact holes exposing the first patterned semiconductor layer are formed in the first dielectric layer and the gate insulator. A second patterned conductive layer and a second patterned semiconductor layer disposed thereon are simultaneously formed on the first dielectric layer. The second conductive layer includes contact conductors and a bottom electrode. The second patterned semiconductor layer includes an active layer. A second dielectric layer having second contact holes is formed on the first dielectric layer, wherein a portion of the second contact holes exposes the active layer. A third patterned conductive layer electrically connected to the active layer through a portion of the second contact holes is formed on the second dielectric layer.
摘要翻译：提供一种用于制造有源器件阵列衬底的方法。第一图案化半导体层，栅极绝缘体，第一图案化导电层和第一介电层依次形成在衬底上。暴露第一图案化半导体层的第一接触孔形成在第一介电层和栅极绝缘体中。第一图案化导电层和设置在其上的第二图案化半导体层同时形成在第一介电层上。第二导电层包括接触导体和底部电极。第二图案化半导体层包括有源层。具有第二接触孔的第二电介质层形成在第一电介质层上，其中一部分第二接触孔露出有源层。通过第二接触孔的一部分电连接到有源层的第三图案化导电层形成在第二介电层上。

4. 发明授权

US08198149B2 Method for fabricating active device array substrate 有权
标题翻译：制造有源器件阵列衬底的方法
公开(公告)号：US08198149B2
公开(公告)日：2012-06-12
申请号：US13349586
申请日：2012-01-13
申请人： Ming-Wei Sun , Chen-Yueh Li , Yu-Cheng Chen , Chia-Tien Peng
发明人： Ming-Wei Sun , Chen-Yueh Li , Yu-Cheng Chen , Chia-Tien Peng
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/14692 , H01L27/1214 , H01L27/1288 , H01L27/14609 , H01L27/14623 , H01L27/14645
摘要： A method for fabricating an active device array substrate is provided. A first patterned semiconductor layer, a gate insulator, a first patterned conductive layer and a first dielectric layer is sequentially formed on a substrate. First contact holes exposing the first patterned semiconductor layer are formed in the first dielectric layer and the gate insulator. A second patterned conductive layer and a second patterned semiconductor layer disposed thereon are simultaneously formed on the first dielectric layer. The second conductive layer includes contact conductors and a bottom electrode. The second patterned semiconductor layer includes an active layer. A second dielectric layer having second contact holes is formed on the first dielectric layer, wherein a portion of the second contact holes exposes the active layer. A third patterned conductive layer electrically connected to the active layer through a portion of the second contact holes is formed on the second dielectric layer.
摘要翻译：提供一种用于制造有源器件阵列衬底的方法。第一图案化半导体层，栅极绝缘体，第一图案化导电层和第一介电层依次形成在衬底上。暴露第一图案化半导体层的第一接触孔形成在第一介电层和栅极绝缘体中。第一图案化导电层和设置在其上的第二图案化半导体层同时形成在第一介电层上。第二导电层包括接触导体和底部电极。第二图案化半导体层包括有源层。具有第二接触孔的第二电介质层形成在第一电介质层上，其中一部分第二接触孔露出有源层。通过第二接触孔的一部分电连接到有源层的第三图案化导电层形成在第二介电层上。

5. 发明申请

US20100187536A1 ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：用于液晶显示器的阵列基板及其制造方法
公开(公告)号：US20100187536A1
公开(公告)日：2010-07-29
申请号：US12752192
申请日：2010-04-01
申请人： Yu-Cheng Chen , Chen-Yueh Li
发明人： Yu-Cheng Chen , Chen-Yueh Li
IPC分类号： H01L33/16
CPC分类号： H01L27/124 , H01L27/1255
摘要： A method for fabricating an array substrate for a liquid crystal display (LCD) is provided. A semiconductor layer and a transparent lower electrode formed on a substrate is provided and covered by a first dielectric layer serving as a gate dielectric layer and a capacitor dielectric layer. A gate electrode and an upper electrode comprising a transparent electrode portion and a metal electrode portion are formed on the first dielectric layer and covered by a second dielectric layer. A source/drain electrode, a planarization layer, and a pixel electrode are sequentially formed on the second dielectric layer, in which the source/drain electrode is electrically connected to the semiconductor layer through the first and second dielectric layers and the pixel electrode is electrically connected to the source/drain electrode through the planarization layer. An array substrate for an LCD is also disclosed.
摘要翻译：提供一种用于制造液晶显示器（LCD）阵列基板的方法。提供形成在基板上的半导体层和透明下电极，并被用作栅极介电层和电容器电介质层的第一介电层覆盖。包括透明电极部分和金属电极部分的栅电极和上电极形成在第一电介质层上并被第二电介质层覆盖。源极/漏极，平坦化层和像素电极依次形成在第二电介质层上，其中源极/漏极通过第一和第二电介质层电连接到半导体层，并且像素电极是电通过平坦化层与源极/漏极连接。还公开了一种用于LCD的阵列基板。

6. 发明申请

US20090085037A1 ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：用于液晶显示器的阵列基板及其制造方法
公开(公告)号：US20090085037A1
公开(公告)日：2009-04-02
申请号：US12128664
申请日：2008-05-29
申请人： Yu-Cheng Chen , Chen-Yueh Li
发明人： Yu-Cheng Chen , Chen-Yueh Li
IPC分类号： H01L27/12 , H01L21/84
CPC分类号： H01L27/124 , H01L27/1255
摘要： A method for fabricating an array substrate for a liquid crystal display (LCD) is provided. A semiconductor layer and a transparent lower electrode formed on a substrate is provided and covered by a first dielectric layer serving as a gate dielectric layer and a capacitor dielectric layer. A gate electrode and an upper electrode comprising a transparent electrode portion and a metal electrode portion are formed on the first dielectric layer and covered by a second dielectric layer. A source/drain electrode, a planarization layer, and a pixel electrode are sequentially formed on the second dielectric layer, in which the source/drain electrode is electrically connected to the semiconductor layer through the first and second dielectric layers and the pixel electrode is electrically connected to the source/drain electrode through the planarization layer. An array substrate for an LCD is also disclosed.
摘要翻译：提供一种用于制造液晶显示器（LCD）阵列基板的方法。提供形成在基板上的半导体层和透明下电极，并被用作栅极介电层和电容器电介质层的第一介电层覆盖。包括透明电极部分和金属电极部分的栅电极和上电极形成在第一电介质层上并被第二电介质层覆盖。源极/漏极，平坦化层和像素电极依次形成在第二电介质层上，其中源极/漏极通过第一和第二电介质层电连接到半导体层，并且像素电极是电通过平坦化层与源极/漏极连接。还公开了一种用于LCD的阵列基板。

7. 发明申请

US20120112214A1 ACTIVE DEVICE ARRAY SUBSTRATE 有权
标题翻译：主动设备阵列基板
公开(公告)号：US20120112214A1
公开(公告)日：2012-05-10
申请号：US13353328
申请日：2012-01-19
申请人： Yu-Cheng Chen , Chen-Yueh Li , Ching-Sang Chuang , Ching-Chieh Shih , An-Thung Cho
发明人： Yu-Cheng Chen , Chen-Yueh Li , Ching-Sang Chuang , Ching-Chieh Shih , An-Thung Cho
IPC分类号： H01L27/15
CPC分类号： H01L27/1288 , H01L27/1214
摘要： An active device array substrate is provided. First, a substrate having a display area and a sensing area is provided. Then, a first patterned conductor layer is disposed on the display area of the substrate. A gate insulator is disposed on the substrate. A patterned semiconductor layer, a second patterned conductor layer and a patterned photosensitive dielectric layer are disposed on the gate insulator, wherein the second patterned conductor layer includes a source electrode, a drain electrode and a lower electrode, the patterned photosensitive dielectric layer covering the second patterned conductor layer includes an interface protection layer disposed on the source electrode and the drain electrode and a photo-sensing layer disposed on the lower electrode. A passivation layer is then disposed on the substrate. After that, a third patterned conductor layer including a pixel electrode and an upper electrode is disposed on the passivation layer.
摘要翻译：提供有源器件阵列衬底。首先，提供具有显示区域和感测区域的基板。然后，在基板的显示区域上设置第一图案化导体层。栅极绝缘体设置在基板上。图案化半导体层，第二图案化导体层和图案化感光介电层设置在栅极绝缘体上，其中第二图案化导体层包括源电极，漏电极和下电极，图案化的感光介电层覆盖第二图案化导体层包括设置在源电极和漏电极上的界面保护层和设置在下电极上的感光层。然后在衬底上设置钝化层。之后，在钝化层上设置包括像素电极和上部电极的第三图案化导体层。

8. 发明授权

US07973317B2 Array substrate for liquid crystal display and method for fabricating the same 有权
标题翻译：液晶显示器用阵列基板及其制造方法
公开(公告)号：US07973317B2
公开(公告)日：2011-07-05
申请号：US12752192
申请日：2010-04-01
申请人： Yu-Cheng Chen , Chen-Yueh Li
发明人： Yu-Cheng Chen , Chen-Yueh Li
IPC分类号： H01L27/14
CPC分类号： H01L27/124 , H01L27/1255
摘要： A method for fabricating an array substrate for a liquid crystal display (LCD) is provided. A semiconductor layer and a transparent lower electrode formed on a substrate is provided and covered by a first dielectric layer serving as a gate dielectric layer and a capacitor dielectric layer. A gate electrode and an upper electrode comprising a transparent electrode portion and a metal electrode portion are formed on the first dielectric layer and covered by a second dielectric layer. A source/drain electrode, a planarization layer, and a pixel electrode are sequentially formed on the second dielectric layer, in which the source/drain electrode is electrically connected to the semiconductor layer through the first and second dielectric layers and the pixel electrode is electrically connected to the source/drain electrode through the planarization layer. An array substrate for an LCD is also disclosed.
摘要翻译：提供一种用于制造液晶显示器（LCD）阵列基板的方法。提供形成在基板上的半导体层和透明下电极，并被用作栅极介电层和电容器电介质层的第一介电层覆盖。包括透明电极部分和金属电极部分的栅电极和上电极形成在第一电介质层上并被第二电介质层覆盖。源极/漏极，平坦化层和像素电极依次形成在第二电介质层上，其中源极/漏极通过第一和第二电介质层电连接到半导体层，并且像素电极是电通过平坦化层与源极/漏极连接。还公开了一种用于LCD的阵列基板。

9. 发明申请

US20100267177A1 METHOD FOR FABRICATING ACTIVE DEVICE ARRAY SUBSTRATE 有权
标题翻译：用于制作主动装置阵列基板的方法
公开(公告)号：US20100267177A1
公开(公告)日：2010-10-21
申请号：US12559506
申请日：2009-09-15
申请人： Yu-Cheng Chen , Chen-Yueh Li , Ching-Sang Chuang , Ching-Chieh Shih , An-Thung Cho
发明人： Yu-Cheng Chen , Chen-Yueh Li , Ching-Sang Chuang , Ching-Chieh Shih , An-Thung Cho
IPC分类号： H01L21/28
CPC分类号： H01L27/1288 , H01L27/1214
摘要： A method for fabricating an active device array substrate is provided. First, a substrate having a display area and a sensing area is provided. Then, a first patterned conductor layer is formed on the display area of the substrate. A gate insulator is formed on the substrate. A patterned semiconductor layer, a second patterned conductor layer and a patterned photosensitive dielectric layer are formed on the gate insulator, wherein the second patterned conductor layer includes a source electrode, a drain electrode and a lower electrode, the patterned photosensitive dielectric layer covering the second patterned conductor layer includes an interface protection layer disposed on the source electrode and the drain electrode and a photo-sensing layer disposed on the lower electrode. A passivation layer is then formed on the substrate. After that, a third patterned conductor layer including a pixel electrode and an upper electrode is formed on the passivation layer.
摘要翻译：提供一种用于制造有源器件阵列衬底的方法。首先，提供具有显示区域和感测区域的基板。然后，在基板的显示区域上形成第一图案化导体层。在基板上形成栅极绝缘体。图案化的半导体层，第二图案化导体层和图案化的光敏介电层形成在栅极绝缘体上，其中第二图案化导体层包括源电极，漏电极和下电极，图案化的感光介电层覆盖第二图案化导体层包括设置在源电极和漏电极上的界面保护层和设置在下电极上的感光层。然后在衬底上形成钝化层。之后，在钝化层上形成包括像素电极和上电极的第三图案化导体层。

10. 发明授权

US07745243B2 Method for forming pixel structure of transflective liquid crystal display 有权
标题翻译：半透射液晶显示装置像素结构形成方法
公开(公告)号：US07745243B2
公开(公告)日：2010-06-29
申请号：US12416934
申请日：2009-04-02
申请人： Yu-Cheng Chen , Chen-Yueh Li , Ching-Sang Chuang , Kun-Chih Lin
发明人： Yu-Cheng Chen , Chen-Yueh Li , Ching-Sang Chuang , Kun-Chih Lin
IPC分类号： H01L21/8232
CPC分类号： G02F1/133555 , G02F2001/136231
摘要： A forming method of the present invention includes forming a first patterned conductive layer, which includes a transparent conductive layer and a metal layer stacked together on a substrate, where the first patterned conductive layer functions as gate lines, gate electrodes, common lines and predetermined transparent pixel electrode structures; and forming a second patterned conductive layer on the substrate. The second patterned conductive layer includes data lines and reflective pixel electrodes, and be directly connected to doping regions, such as source regions/drain regions. According to the forming method of the present invention, pixel structures of a transflective liquid crystal display device can be formed through five mask processes. Therefore, the manufacturing process of the transflective liquid crystal display device is effectively simplified, so the product yield is improved and the cost can be reduced.
摘要翻译：本发明的形成方法包括形成第一图案化导电层，其包括在基板上堆叠在一起的透明导电层和金属层，其中第一图案化导电层用作栅极线，栅电极，共同线和预定透明像素电极结构; 以及在所述衬底上形成第二图案化导电层。第二图案化导电层包括数据线和反射像素电极，并且直接连接到诸如源极区/漏极区的掺杂区。根据本发明的形成方法，可以通过五个掩模工艺形成半透射型液晶显示装置的像素结构。因此，有效地简化了半透射型液晶显示装置的制造工艺，从而提高了产品成品率，降低了成本。

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