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    • 2. 发明申请
    • Flash Memory Cells Having Leakage-Inhibition Layers
    • 具有泄漏抑制层的闪存单元
    • US20100001335A1
    • 2010-01-07
    • US12168545
    • 2008-07-07
    • Ming-Tsong WangTong-Chern OngAlbert ChinHsueh-Jen Yang
    • Ming-Tsong WangTong-Chern OngAlbert ChinHsueh-Jen Yang
    • H01L29/792
    • H01L29/792H01L29/513H01L29/518
    • A semiconductor device includes a semiconductor substrate; a tunneling layer over the semiconductor substrate, wherein the tunneling layer has a first conduction band; a storage layer over the tunneling layer, wherein the storage layer has a second conduction band; a blocking layer over the storage layer, wherein the blocking layer has a third conduction band; a gate electrode over the blocking layer; and at least one of a first leakage-inhibition layer and a second leakage-inhibition layer. The first leakage-inhibition layer is between the tunneling layer and the storage layer, and has a fourth conduction band lower than the first conduction band. The second leakage-inhibition layer is between the blocking layer and the gate electrode, and has a fifth conduction band lower than the third conduction band.
    • 半导体器件包括半导体衬底; 在所述半导体衬底上的隧道层,其中所述隧道层具有第一导带; 在所述隧道层上的存储层,其中所述存储层具有第二导带; 在所述存储层上的阻挡层,其中所述阻挡层具有第三导带; 阻挡层上的栅电极; 以及第一泄漏抑制层和第二泄漏抑制层中的至少一个。 第一泄漏抑制层在隧道层和存储层之间,并且具有比第一导带低的第四导带。 第二泄漏抑制层位于阻挡层和栅电极之间,并且具有比第三导带低的第五导带。
    • 4. 发明授权
    • Flash memory cells having leakage-inhibition layers
    • 具有泄漏抑制层的闪存单元
    • US08735963B2
    • 2014-05-27
    • US12168545
    • 2008-07-07
    • Ming-Tsong WangTong-Chern OngAlbert ChinHsueh-Jen Yang
    • Ming-Tsong WangTong-Chern OngAlbert ChinHsueh-Jen Yang
    • H01L29/792
    • H01L29/792H01L29/513H01L29/518
    • A semiconductor device includes a semiconductor substrate; a tunneling layer over the semiconductor substrate, wherein the tunneling layer has a first conduction band; a storage layer over the tunneling layer, wherein the storage layer has a second conduction band; a blocking layer over the storage layer, wherein the blocking layer has a third conduction band; a gate electrode over the blocking layer; and at least one of a first leakage-inhibition layer and a second leakage-inhibition layer. The first leakage-inhibition layer is between the tunneling layer and the storage layer, and has a fourth conduction band lower than the first conduction band. The second leakage-inhibition layer is between the blocking layer and the gate electrode, and has a fifth conduction band lower than the third conduction band.
    • 半导体器件包括半导体衬底; 在所述半导体衬底上的隧道层,其中所述隧道层具有第一导带; 在所述隧道层上的存储层,其中所述存储层具有第二导带; 在所述存储层上的阻挡层,其中所述阻挡层具有第三导带; 阻挡层上的栅电极; 以及第一泄漏抑制层和第二泄漏抑制层中的至少一个。 第一泄漏抑制层在隧道层和存储层之间,并且具有比第一导带低的第四导带。 第二泄漏抑制层位于阻挡层和栅电极之间,并且具有比第三导带低的第五导带。