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1. 发明授权

US07952368B1 Apparatus and method for measuring diode chip 有权
标题翻译：二极管芯片测量装置及方法
公开(公告)号：US07952368B1
公开(公告)日：2011-05-31
申请号：US12876218
申请日：2010-09-06
申请人： Ming-Ji Dai , Sheng-Liang Li , Ra-Min Tain , Chun-Kai Liu , Chung-Yen Hsu , Ming-Te Lin , Kuang-Yu Tai
发明人： Ming-Ji Dai , Sheng-Liang Li , Ra-Min Tain , Chun-Kai Liu , Chung-Yen Hsu , Ming-Te Lin , Kuang-Yu Tai
IPC分类号： G01R31/00
CPC分类号： G01R31/2635
摘要： An apparatus and a method for measuring a diode chip are provided. The diode chip is placed on a thermal conductive element. The apparatus measures an instant starting current and a first temperature, which is associated with the instant starting current, of the thermal conductive element. After the diode chip operates, the apparatus adjusts the temperature of the thermal conductive element to a second temperature, such that the current of the diode chip is adjusted to be equal to the instant starting current. The apparatus calculates a property of the diode chip according to a real power of the diode chip and a difference between the first temperature and the second temperature.
摘要翻译：提供了一种用于测量二极管芯片的装置和方法。二极管芯片放置在导热元件上。该装置测量与导热元件的即时启动电流相关联的即时启动电流和第一温度。在二极管芯片工作之后，该装置将导热元件的温度调节到第二温度，使得二极管芯片的电流被调整为等于即时启动电流。该装置根据二极管芯片的实际功率和第一温度与第二温度之间的差来计算二极管芯片的特性。

2. 发明授权

US08075182B2 Apparatus and method for measuring characteristic and chip temperature of LED 有权
标题翻译： LED测量特性和芯片温度的仪器和方法
公开(公告)号：US08075182B2
公开(公告)日：2011-12-13
申请号：US12168921
申请日：2008-07-08
申请人： Ming-Ji Dai , Chun-Kai Liu , Heng-Chieh Chien , Chih-Kuang Yu , Sheng-Liang Li
发明人： Ming-Ji Dai , Chun-Kai Liu , Heng-Chieh Chien , Chih-Kuang Yu , Sheng-Liang Li
IPC分类号： G01K7/00
CPC分类号： G01K7/01 , G01K2217/00
摘要： An apparatus for measuring a characteristic and a chip temperature of an LED includes a thermal conductive component. An LED chip is disposed on the thermal conductive component. A temperature control unit is connected to the thermal conductive component for providing a temperature to the thermal conductive component, and therefore providing the temperature to the LED chip via the thermal conductive component. A power-source and voltage-meter unit provides a current to the LED chip, and measures a voltage value of the LED chip. Under a measurement mode, the current is featured with a current waveform having a high current level and a low current level which are alternatively changed, for applying to the LED chip. Measurements are conducted respectively corresponding to the high current level and the low current level, and a correlation curve between the voltage and the temperature can be obtained with the results of measurement.
摘要翻译：用于测量LED的特性和芯片温度的装置包括导热部件。 LED芯片设置在导热部件上。温度控制单元连接到导热部件，以向导热部件提供温度，因此通过导热部件向LED芯片提供温度。电源和电压表单元为LED芯片提供电流，并测量LED芯片的电压值。在测量模式下，电流特征在于具有高电流电流和低电流水平的电流波形，其被替代地改变，用于施加到LED芯片。分别对应于高电流电平和低电流电平进行测量，并且可以用测量结果获得电压和温度之间的相关曲线。

3. 发明申请

US20130160808A1 THERMOELECTRIC GENERATING APPARATUS AND MODULE 审中-公开
标题翻译：热电发生装置和模块
公开(公告)号：US20130160808A1
公开(公告)日：2013-06-27
申请号：US13430660
申请日：2012-03-26
申请人： Chung-Yen Hsu , Sheng-Liang Li
发明人： Chung-Yen Hsu , Sheng-Liang Li
IPC分类号： H01L35/32
CPC分类号： H01L35/32 , H01L35/16
摘要： A thermoelectric generating apparatus is provided which includes a first and a second thermoelectric (TE) devices. The first TE device and the second TE device have an electrical junction surface that is an interdigitated junction interface. The Seebeck coefficient of the first TE device is more than that of the second TE device. The first TE device includes a first extended portion, and the second TE device includes a second extended portion. The first extended portion is electrically connected with a first power output end with a first contact surface formed therebetween, and the area of the electrical junction surface is larger than that of the first contact surface. The second extended portion is electrically connected with a second power output end with a second contact surface formed therebetween, and the area of the electrical junction surface is larger than that of the second contact surface.
摘要翻译：提供一种包括第一和第二热电（TE）装置的热电发生装置。第一TE器件和第二TE器件具有作为叉指接合界面的电连接表面。第一TE设备的塞贝克系数大于第二TE设备的塞贝克系数。第一TE设备包括第一延伸部分，并且第二TE设备包括第二延伸部分。第一延伸部分与第一功率输出端电连接，其间形成有第一接触表面，并且电接合面的面积大于第一接触表面的面积。第二延伸部分与第二功率输出端电连接，其间形成有第二接触表面，并且电接合表面的面积大于第二接触表面的面积。

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