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1. 发明授权

US08625248B2 Electrostatic discharge protector 失效
标题翻译：静电放电保护器
公开(公告)号：US08625248B2
公开(公告)日：2014-01-07
申请号：US13123262
申请日：2009-10-06
申请人： Mina Onishi , Yoshimitsu Ishihara , Hirofumi Inoue , Yukihiko Azuma
发明人： Mina Onishi , Yoshimitsu Ishihara , Hirofumi Inoue , Yukihiko Azuma
IPC分类号： H02H1/04 , H02H3/22
CPC分类号： H01C7/12 , H01T4/10 , H05K1/0259 , H05K2201/09672 , H05K2201/09881
摘要： The present invention provides an electrostatic discharge protector capable of protecting electronic circuit boards having various designs from electrostatic discharge freely, simply and easily. The electrostatic discharge protector of the present invention comprises at least three conductive members containing one pair of electrodes and the conductive members other than the electrodes, the conductive members are each disposed in such a way that the gap between one conductive member and the other conductive member has a width of 0.1 to 10 μm, an insulating member is disposed and embedded in at least one of gaps having a width of 0.1 to 10 μm which are adjacent to each conductive member and one electrode is connected to the other electrode paired with the one electrode through the insulating member and the conductive members other than electrodes.
摘要翻译：本发明提供一种静电放电保护器，其能够简单且容易地保护具有各种设计的电子电路板免受静电放电。本发明的静电放电保护器包括至少三个包含一对电极的导电构件和除电极之外的导电构件，导电构件各自设置成使得一个导电构件和另一个导电构件之间的间隙具有0.1至10微米的宽度，绝缘构件设置并嵌入在与每个导电构件相邻的宽度为0.1至10μm的间隙中的至少一个中，并且一个电极连接到与该一个配对的另一个电极电极通过绝缘构件和除电极之外的导电构件。

2. 发明申请

US20090099283A1 THERMOSETTING RESIN COMPOSITIONS, FLEXIBLE CIRCUIT BOARD OVERCOATING AGENTS, AND SURFACE PROTECTIVE LAYERS 审中-公开
标题翻译：热固性树脂组合物，柔性电路板过氧化物和表面保护层
公开(公告)号：US20090099283A1
公开(公告)日：2009-04-16
申请号：US12282609
申请日：2007-03-13
申请人： Yoshimitsu Ishihara , Hirofumi Inoue , Mina Onishi
发明人： Yoshimitsu Ishihara , Hirofumi Inoue , Mina Onishi
IPC分类号： C08K5/09 , C08K5/15
CPC分类号： H05K3/285 , C08G18/12 , C08G18/348 , C08G18/44 , C08G18/6659 , C08G18/69 , C08G59/4269 , C08K5/1539 , C08K5/41 , C08L75/04 , C09D163/00 , C09D175/04 , H05K1/0393 , H05K2201/0209 , C08G18/282 , C08L2666/20 , C08L2666/04 , C08L2666/14
摘要： Overcoating agents and thermosetting resin compositions of the invention give protective layers that have excellent adhesion to substrates and in particular to tin, excellent long-term reliability of electric insulation and small warpage. A thermosetting resin composition according to the invention includes a carboxyl group-containing urethane resin (A), a curing agent (B) and an acid anhydride (C) as essential components. A flexible circuit board overcoating agent includes the thermosetting resin composition. A surface protective layer of the invention comprises a cured product of the thermosetting resin composition.
摘要翻译：本发明的外涂剂和热固性树脂组合物提供对基材具有优异粘合性，特别是锡的保护层，优异的电绝缘长期可靠性和小翘曲。本发明的热固性树脂组合物含有含羧基的聚氨酯树脂（A），固化剂（B）和酸酐（C）作为必要成分。柔性电路板外涂剂包括热固性树脂组合物。本发明的表面保护层包括热固性树脂组合物的固化产物。

3. 发明申请

US20110317326A1 DISCHARGE GAP FILLING COMPOSITION AND ELECTROSTATIC DISCHARGE PROTECTOR 审中-公开
标题翻译：放电气隙填充组合物和静电放电保护器
公开(公告)号：US20110317326A1
公开(公告)日：2011-12-29
申请号：US13254288
申请日：2010-03-01
申请人： Mina Onishi , Yoshimitsu Ishihara , Hirofumi Inoue , Yukihiko Azuma
发明人： Mina Onishi , Yoshimitsu Ishihara , Hirofumi Inoue , Yukihiko Azuma
IPC分类号： H05F1/00 , C08L83/04 , C08K9/02 , H05K1/00 , H05K7/00
CPC分类号： H01T4/02 , H01C7/1006 , H01C7/12 , H01C17/06526 , H01C17/06553 , H01T4/10 , H05K9/0067
摘要： A discharge gap filling composition for an electrostatic discharge protector. The composition contains oxide film coated metal particles (A), a layered substance (B) and a binder component (C). Also disclosed is an electrostatic discharge protector including a discharge gap and a discharge gap filling material containing the discharge gap filling composition that is filled in the discharge gap.
摘要翻译：一种用于静电放电保护器的放电间隙填充组合物。该组合物含有氧化膜被覆的金属粒子（A），层状物质（B）和粘合剂成分（C）。还公开了包括放电间隙的静电放电保护器和包含填充在放电间隙中的放电间隙填充组合物的放电间隙填充材料。

4. 发明申请

US20110194225A1 ELECTROSTATIC DISCHARGE PROTECTOR 失效
标题翻译：静电放电保护器
公开(公告)号：US20110194225A1
公开(公告)日：2011-08-11
申请号：US13123262
申请日：2009-10-06
申请人： Mina Onishi , Yoshimitsu Ishihara , Hirofumi Inoue , Yukihiko Azuma
发明人： Mina Onishi , Yoshimitsu Ishihara , Hirofumi Inoue , Yukihiko Azuma
IPC分类号： H05F3/00
CPC分类号： H01C7/12 , H01T4/10 , H05K1/0259 , H05K2201/09672 , H05K2201/09881
摘要： The present invention provides an electrostatic discharge protector capable of protecting electronic circuit boards having various designs from electrostatic discharge freely, simply and easily. The electrostatic discharge protector of the present invention comprises at least three conductive members containing one pair of electrodes and the conductive members other than the electrodes, the conductive members are each disposed in such a way that the gap between one conductive member and the other conductive member has a width of 0.1 to 10 μm, an insulating member is disposed and embedded in at least one of gaps having a width of 0.1 to 10 μm which are adjacent to each conductive member and one electrode is connected to the other electrode paired with the one electrode through the insulating member and the conductive members other than electrodes.
摘要翻译：本发明提供一种静电放电保护器，其能够简单且容易地保护具有各种设计的电子电路板免受静电放电。本发明的静电放电保护器包括至少三个包含一对电极的导电构件和除电极之外的导电构件，导电构件各自设置成使得一个导电构件和另一个导电构件之间的间隙具有0.1至10μm的宽度，绝缘构件设置并嵌入到与每个导电构件相邻的宽度为0.1至10μm的间隙中的至少一个中，并且一个电极连接到与该一个电极配对的另一个电极电极通过绝缘构件和除电极之外的导电构件。

5. 发明申请

US20100201802A1 RESIN COMPOSITION AND USE THEREOF 审中-公开
标题翻译：树脂组合物及其用途
公开(公告)号：US20100201802A1
公开(公告)日：2010-08-12
申请号：US12669407
申请日：2008-07-14
申请人： Mina Onishi , Hirofumi Inoue
发明人： Mina Onishi , Hirofumi Inoue
IPC分类号： H04N7/18 , H05K1/00 , C08K3/30 , C08K3/36
CPC分类号： H05K3/285 , C08G18/0823 , C08G18/348 , C08G18/44 , C08G18/6659 , C08G18/69 , C08G18/758 , C08L63/00 , C08L75/04 , C08L75/14 , G01N21/94 , G01N21/956 , G01N2021/95638 , H01L27/1462 , H01L27/14625 , H05K1/0269 , H05K2203/161 , C08L2666/20 , C08L2666/14
摘要： The resin composition includes a color pigment (A) and a curable resin (B) and gives a cured film satisfying the following requirements (I), (II), (III), (IV) and (V): (I) the maximum transmittance of light having wavelengths of 500 nm to 550 nm is not less than 90%; (II) the minimum transmittance of light having wavelengths of 600 nm to 650 nm is less than 80%; (III) the maximum reflectance of light having wavelengths of 500 nm to 550 nm is less than 12%; (IV) the minimum reflectance of light having wavelengths of 600 nm to 650 nm is less than 7%; (V) the 60° gloss value measured with white light is not less than 80.
摘要翻译：树脂组合物包括着色颜料（A）和固化性树脂（B），并且得到满足以下要求（I），（II），（III），（IV）和（V）的固化膜：（I）具有500nm至550nm波长的光的最大透射率不小于90％; （II）具有600nm至650nm波长的光的最小透射率小于80％; （III）波长为500nm至550nm的光的最大反射率小于12％; （IV）波长为600nm至650nm的光的最小反射率小于7％; （V）用白光测量的60°光泽值不小于80。

6. 发明授权

US08575589B2 Nonvolatile semiconductor memory device and method of manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08575589B2
公开(公告)日：2013-11-05
申请号：US12271434
申请日：2008-11-14
申请人： Hiroyuki Nagashima , Koichi Kubo , Hirofumi Inoue
发明人： Hiroyuki Nagashima , Koichi Kubo , Hirofumi Inoue
IPC分类号： H01L29/06
CPC分类号： H01L27/2463 , H01L27/101 , H01L27/112 , H01L27/2436 , H01L27/2481 , H01L45/085 , H01L45/146 , H01L45/147 , H01L45/1675
摘要： A nonvolatile semiconductor memory device includes a plurality of first lines; a plurality of second lines crossing the plurality of first lines; a plurality of memory cells each connected at an intersection of the first and second lines between both lines and including a variable resistor operative to store information in accordance with a variation in resistance; and a protection film covering the side of the variable resistor to suppress migration of cations at the side of the variable resistor.
摘要翻译：非易失性半导体存储器件包括多条第一线; 多条第二线穿过多条第一线; 多个存储单元，每个存储单元分别连接在两条线之间的第一和第二线的交点处，并且包括可变电阻，用于根据电阻的变化存储信息; 以及覆盖可变电阻器一侧的保护膜，以抑制可变电阻器一侧的阳离子迁移。

7. 发明授权

US08469164B2 Damper 有权
标题翻译：阻尼器
公开(公告)号：US08469164B2
公开(公告)日：2013-06-25
申请号：US12298196
申请日：2007-04-10
申请人： Takuhiro Kondo , Hirofumi Inoue
发明人： Takuhiro Kondo , Hirofumi Inoue
IPC分类号： F16F9/34
CPC分类号： F16F15/03 , B60G13/001 , B60G15/062 , B60G15/065 , B60G17/0157 , B60G17/021 , B60G2202/312 , B60G2202/32 , F16F9/0209 , F16F9/06 , F16F9/18 , F16F2232/04 , F16F2232/06
摘要： A damper (D1) comprising an actuator A connected to a sprung member (B) side of a vehicle, the actuator having a motion converting mechanism (T) for converting a linear motion into a rotational motion and a motor (M) to which the rotational motion resulting from the conversion by the motion converting mechanism (T) is transmitted; a hydraulic damper (E), the hydraulic damper (E) having a cylinder (C), a piston (P) inserted slidably into the cylinder (C) and defining two pressure chambers within the cylinder (C), and a rod (R) connected at one end thereof to the piston (P), the linear motion of the actuator (A) being transmitted to one of the rod (R) and the cylinder (C), the other of the rod (R) and the cylinder (C) being connected to an unsprung member (W) side of the vehicle; a spring (1) accommodated within one of the two pressure chambers and biasing the hydraulic damper (E) in a damper compressing direction; and a spring (2) accommodated within the other pressure chamber and biasing the hydraulic damper (E) in a damper extending direction.
摘要翻译：一种阻尼器（D1），包括连接到车辆的弹簧构件（B）侧的致动器A，所述致动器具有用于将直线运动转换为旋转运动的运动转换机构（T）和马达（M），所述运动转换机构传送由运动转换机构（T）的转换产生的旋转运动; 液压阻尼器（E），具有气缸（C）的液压阻尼器（E），可滑动地插入气缸（C）中并限定气缸（C）内的两个压力室的活塞（P）和杆（R ），致动器（A）的直线运动传递到杆（R）和气缸（C）中的一个，杆（R）和气缸（C）中的另一个（C）连接到车辆的簧下部件（W）侧; 容纳在所述两个压力室中的一个内的弹簧（1），并且在阻尼器压缩方向上偏置所述液压阻尼器（E）以及容纳在另一个压力室内的弹簧（2），并且在阻尼器延伸方向上偏压液压阻尼器（E）。

8. 发明授权

US08467225B2 Semiconductor memory device and memory cell voltage application method 有权
标题翻译：半导体存储器件和存储单元电压施加方法
公开(公告)号：US08467225B2
公开(公告)日：2013-06-18
申请号：US12747290
申请日：2008-09-09
申请人： Hirofumi Inoue
发明人： Hirofumi Inoue
IPC分类号： G11C11/00
CPC分类号： G11C7/12 , G11C13/0004 , G11C13/0011 , G11C13/004 , G11C13/0069 , G11C2013/0076 , G11C2213/11 , G11C2213/12 , G11C2213/72
摘要： A semiconductor memory device includes a plurality of parallel word lines, a plurality of parallel bit lines formed crossing the plurality of word lines, and a plurality of memory cells arranged at intersections of the word lines and the bit lines. Each memory cell has one end connected to the word line and the other end connected to the bit line. The device also comprises a drive circuit operative to selectively apply a voltage for data read/write across the word line and the bit line. It further comprises a sense amplifier circuit connected to the plurality of bit lines and operative to read/write data stored in the memory cell. The device also comprises a bit-line drive auxiliary circuit operative to selectively adjust the potentials on the plurality of bit lines based on data read out of the memory cell by the sense amplifier circuit.
摘要翻译：半导体存储器件包括多条并行字线，与多条字线交叉形成的多条并行位线，以及布置在字线和位线的交点处的多个存储单元。每个存储单元的一端连接到字线，另一端连接到位线。该装置还包括驱动电路，其操作以选择性地施加跨越字线和位线的数据读/写电压。它还包括连接到多个位线的读出放大器电路，并用于读/写存储在存储单元中的数据。该装置还包括位线驱动辅助电路，其可操作以基于由读出放大器电路从存储单元读出的数据选择性地调整多个位线上的电位。

9. 发明授权

US08259489B2 Nonvolatile semiconductor memory device generating different write pulses to vary resistances 有权
标题翻译：产生不同写入脉冲以改变电阻的非易失性半导体存储器件
公开(公告)号：US08259489B2
公开(公告)日：2012-09-04
申请号：US12677017
申请日：2008-09-09
申请人： Hiroyuki Nagashima , Hirofumi Inoue , Haruki Toda
发明人： Hiroyuki Nagashima , Hirofumi Inoue , Haruki Toda
IPC分类号： G11C11/00
CPC分类号： H01L27/101 , G11C11/5685 , G11C13/0004 , G11C13/0009 , G11C13/004 , G11C13/0064 , G11C2013/0054 , G11C2013/0073 , G11C2213/56 , G11C2213/71 , G11C2213/72
摘要： A nonvolatile semiconductor memory device comprises a memory cell array of electrically erasable programmable nonvolatile memory cells arranged in matrix, each memory cell using a variable resistor. A pulse generator is operative to generate plural types of write pulses for varying the resistance of the variable resistor in three or more stages based on ternary or higher write data. A selection circuit is operative to select a write target memory cell from the memory cell array based on a write address and supply the write pulse generated from the pulse generator to the selected memory cell.
摘要翻译：非易失性半导体存储器件包括以矩阵形式布置的电可擦除可编程非易失性存储单元的存储单元阵列，每个存储单元使用可变电阻器。脉冲发生器用于产生多种类型的写入脉冲，用于基于三进制或更高写入数据在三个或更多个阶段中改变可变电阻器的电阻。选择电路可操作以基于写地址从存储单元阵列中选择写入目标存储单元，并将从脉冲发生器产生的写入脉冲提供给所选存储单元。

10. 发明授权

US08120942B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US08120942B2
公开(公告)日：2012-02-21
申请号：US12559931
申请日：2009-09-15
申请人： Takeshi Yamaguchi , Mariko Hayashi , Hirofumi Inoue , Takeshi Araki , Koichi Kubo
发明人： Takeshi Yamaguchi , Mariko Hayashi , Hirofumi Inoue , Takeshi Araki , Koichi Kubo
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C13/0069 , G11C2013/009 , G11C2213/32 , G11C2213/33 , G11C2213/71 , G11C2213/72 , H01L27/101 , H01L27/1021
摘要： A memory array includes a memory cell, the memory cell being disposed between a first line and a second line and being configured by a variable resistor and a rectifier connected in series. The variable resistor is a mixture of silicon oxide (SiO2) and a transition metal oxide, a proportion of the transition metal oxide being set to 55˜80%.
摘要翻译：存储器阵列包括存储器单元，存储单元设置在第一线路和第二线路之间，并且由可变电阻器和串联连接的整流器构成。可变电阻器是氧化硅（SiO 2）和过渡金属氧化物的混合物，过渡金属氧化物的比例设定为55〜80％。

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