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1. 发明申请

US20100179348A1 DIIMMONIUM SALT AND NEAR INFRARED RAY ABSORPTION FILM CONTAINING THE SAME 有权
标题翻译：二盐酸盐和近红外辐射吸收膜
公开(公告)号：US20100179348A1
公开(公告)日：2010-07-15
申请号：US12440188
申请日：2007-09-05
申请人： Min-Hyuk Lee , Ju-Sik Kang , Jeong-Ho Park , Sung-Yung Lee
发明人： Min-Hyuk Lee , Ju-Sik Kang , Jeong-Ho Park , Sung-Yung Lee
IPC分类号： C07C251/30
CPC分类号： C07F9/28 , C07C251/30
摘要： Disclosed are a diimmonium salt and a near infrared ray absorption film including the same which is used for blocking the near infrared ray. The diimmonium salt for a near infrared ray absorption film is represented by Formula 1 of the specification, wherein, n is an integer of 1 or 2, R1 to R8 are independently a substituted or unsubstituted linear or branched C1-C10 alkyl group, the substituent for the alkyl group is selected from the group consisting of a cyano group, a nitro group, a carboxyl group, a sulfone group, a halogen atom, a hydroxyl group, a C1 -C8 alkoxy, alkoxyalkoxy, acyloxy, or alkylamino group, and C6-C18 aryl or aryloxy group, and X is a substituted fluoro alkyl phosphate anion represented by Formula 2 of the specification, wherein, x is an integer of 0 or 1, y is an integer of 1, 2 or 3, z is an integer of 6-y, and R9 to R13 are independently a hydrogen atom (H) or a fluorine atom (F).
摘要翻译：公开了用于阻挡近红外线的二亚铵盐和包含该二亚铵盐的近红外线吸收膜。用于近红外线吸收膜的二亚铵盐由本说明书的式1表示，其中n为1或2的整数，R 1至R 8独立地为取代或未取代的直链或支链C 1 -C 10烷基，取代基所述烷基选自氰基，硝基，羧基，砜基，卤素原子，羟基，C 1 -C 8烷氧基，烷氧基烷氧基，酰氧基或烷基氨基，以及 C6-C18芳基或芳氧基，X是由本说明书的式2表示的取代的氟烷基磷酸根阴离子，其中x是0或1的整数，y是1,2或3的整数，z是 6-y的整数，R 9至R 13独立地为氢原子（H）或氟原子（F）。

2. 发明授权

US07964754B2 Diimmonium salt and near infrared ray absorption film containing the same 有权
标题翻译：二次盐和含有其的近红外线吸收膜
公开(公告)号：US07964754B2
公开(公告)日：2011-06-21
申请号：US12440188
申请日：2007-09-05
申请人： Min-Hyuk Lee , Ju-Sik Kang , Jeong-Ho Park , Sung-Yung Lee
发明人： Min-Hyuk Lee , Ju-Sik Kang , Jeong-Ho Park , Sung-Yung Lee
IPC分类号： C07C251/22 , G06K7/10 , G02B5/22
CPC分类号： C07F9/28 , C07C251/30
摘要： Disclosed are a diimmonium salt and a near infrared ray absorption film including the same which is used for blocking the near infrared ray. The diimmonium salt for a near infrared ray absorption film is represented by Formula 1 of the specification, wherein, n is an integer of 1 or 2, R1 to R8 are independently a substituted or unsubstituted linear or branched C1-C10 alkyl group, the substituent for the alkyl group is selected from the group consisting of a cyano group, a nitro group, a carboxyl group, a sulfone group, a halogen atom, a hydroxyl group, a C1 -C8 alkoxy, alkoxyalkoxy, acyloxy, or alkylamino group, and C6-C18 aryl or aryloxy group, and X is a substituted fluoro alkyl phosphate anion represented by Formula 2 of the specification, wherein, x is an integer of 0 or 1, y is an integer of 1, 2 or 3, z is an integer of 6-y, and R9 to R13 are independently a hydrogen atom (H) or a fluorine atom (F).
摘要翻译：公开了用于阻挡近红外线的二亚铵盐和包含该二亚铵盐的近红外线吸收膜。用于近红外线吸收膜的二亚铵盐由本说明书的式1表示，其中n为1或2的整数，R 1至R 8独立地为取代或未取代的直链或支链C 1 -C 10烷基，取代基所述烷基选自氰基，硝基，羧基，砜基，卤素原子，羟基，C 1 -C 8烷氧基，烷氧基烷氧基，酰氧基或烷基氨基，以及 C6-C18芳基或芳氧基，X是由本说明书的式2表示的取代的氟烷基磷酸根阴离子，其中x是0或1的整数，y是1,2或3的整数，z是 6-y的整数，R 9至R 13独立地为氢原子（H）或氟原子（F）。

3. 发明授权

US06605835B2 Ferroelectric memory and its method of fabrication 失效
标题翻译：铁电存储器及其制造方法
公开(公告)号：US06605835B2
公开(公告)日：2003-08-12
申请号：US10052033
申请日：2002-01-15
申请人： Sung-Yung Lee
发明人： Sung-Yung Lee
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： A ferroelectric memory device has a lower electrode, ferroelectric layer and a first portion of an upper electrode that are formed as a stack over a semiconductor substrate. Sidewalls of the stack are covered with a second portion of the upper electrode. An insulating spacer is disposed between the lower electrode and the second portion of the upper electrode. The second portion of the upper electrode is electrically connected to the first portion of the upper electrode yet electrically insulated by the insulating spacer from the lower electrode. At least one of the first and second portions of the upper electrode is formed of a hydrogen barrier layer to protect the ferroelectric layer of the stack from hydrogen ions.
摘要翻译：铁电存储器件具有在半导体衬底上形成为堆叠的下电极，铁电层和上电极的第一部分。堆叠的侧壁被上部电极的第二部分覆盖。绝缘垫片设置在下电极和上电极的第二部分之间。上部电极的第二部分电连接到上部电极的第一部分，而绝缘隔离物与下部电极电绝缘。上电极的第一和第二部分中的至少一个由氢阻挡层形成，以保护叠层的铁电层不受氢离子的影响。

4. 发明授权

US07144772B2 Semiconductor devices having capacitors of metal-insulator-metal structure with coextensive oxidation barrier pattern and lower electrode bottom and methods of forming the same 失效
标题翻译：具有金属 - 绝缘体 - 金属结构的电容器，具有共同的氧化屏障图案和下部电极底部的半导体器件及其形成方法
公开(公告)号：US07144772B2
公开(公告)日：2006-12-05
申请号：US10650344
申请日：2003-08-28
申请人： Sung-Yung Lee , Nak-Won Jang , Heung-Jin Joo
发明人： Sung-Yung Lee , Nak-Won Jang , Heung-Jin Joo
IPC分类号： H01L21/8242
CPC分类号： H01L28/75 , H01L21/31604 , H01L21/76895 , H01L27/10817 , H01L27/10852 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/90
摘要： A semiconductor device having MIM capacitors is configured so that the bottom surface of the lower electrode and a top surface area of an oxidation barrier pattern are substantially equal. Related methods for forming the device are also described.
摘要翻译：具有MIM电容器的半导体器件被配置为使得下电极的底表面和氧化阻挡图案的顶表面区域基本相等。还描述了用于形成装置的相关方法。

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