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1. 发明申请

US20080145966A1 METHOD FOR FABRICATION OF ORGANIC THIN-FILM TRANSISTOR 审中-公开
标题翻译：有机薄膜晶体管的制造方法
公开(公告)号：US20080145966A1
公开(公告)日：2008-06-19
申请号：US11923348
申请日：2007-10-24
申请人： Min-Hua Yang , Meng-Che Chuang , Wei-Hsiang Lin , Yu-Hsuan Chen , Chun-Hao Hsu , Wen-Hsin Hsiao , Chih-Kung Lee , Wen-Jong Wu
发明人： Min-Hua Yang , Meng-Che Chuang , Wei-Hsiang Lin , Yu-Hsuan Chen , Chun-Hao Hsu , Wen-Hsin Hsiao , Chih-Kung Lee , Wen-Jong Wu
IPC分类号： H01L51/40
CPC分类号： H01L51/0021 , H01L51/0023
摘要： A method for fabricating organic thin-film transistors is disclosed. The method includes the steps of: providing a mold and a flexible substrate, wherein the mold comprises microstructures for defining source/drain electrode patterns on the substrate and at least an opening for feeding a solution material; forming an adhesive layer on the flexible substrate such that the mold is attached to the flexible substrate via the adhesive layer; feeding a solution material for forming source/drain electrodes via the opening of the mold and curing the solution material so as to form source/drain electrodes; removing the mold and forming a semiconductor layer on the source/drain electrodes; forming an insulator layer on the semiconductor layer and on the source/drain electrodes; forming a gate electrode on the insulator layer; and forming a protective layer for covering the organic thin-film transistor. The channel length of the thin film transistor is determined by the resolution of the microstructures of the mold.
摘要翻译：公开了一种用于制造有机薄膜晶体管的方法。该方法包括以下步骤：提供模具和柔性基底，其中所述模具包括用于限定所述基底上的源/漏电极图案的微结构和用于馈送溶液材料的至少一个开口; 在所述柔性基板上形成粘合剂层，使得所述模具经由所述粘合剂层附接到所述柔性基板; 通过模具的开口供给用于形成源/漏电极的溶液，并固化溶液材料以形成源/漏电极; 去除模具并在源/漏电极上形成半导体层; 在所述半导体层和所述源极/漏极上形成绝缘体层; 在所述绝缘体层上形成栅电极; 以及形成用于覆盖有机薄膜晶体管的保护层。薄膜晶体管的沟道长度由模具的微结构的分辨率确定。

2. 发明授权

US08669558B2 Pixel structure and electrical bridging structure 有权
标题翻译：像素结构和电桥结构
公开(公告)号：US08669558B2
公开(公告)日：2014-03-11
申请号：US13349554
申请日：2012-01-12
申请人： Ching-Yang Liu , Wei-Hsiang Lin , Shu-Wei Chu , Hsiang-Chih Hsiao , Jhih-Jie Huang , Sai-Chang Liu , Yu-Hsing Liang
发明人： Ching-Yang Liu , Wei-Hsiang Lin , Shu-Wei Chu , Hsiang-Chih Hsiao , Jhih-Jie Huang , Sai-Chang Liu , Yu-Hsing Liang
IPC分类号： H01L29/04
CPC分类号： H01L27/3248
摘要： A pixel structure includes a thin film transistor device, an insulating layer disposed on the thin film transistor device, and a pixel electrode disposed on the insulating layer. The thin film transistor device includes a floating conductive pad disposed at one side of a semiconductor layer, and electrically connected to a source/drain electrode. The insulating layer has a first contact hole partially exposing the floating conductive pad. The pixel electrode is electrically connected to the floating conductive pad via the first contact hole.
摘要翻译：像素结构包括薄膜晶体管器件，设置在薄膜晶体管器件上的绝缘层和设置在绝缘层上的像素电极。薄膜晶体管器件包括设置在半导体层的一侧的浮置导电焊盘，并且电连接到源/漏电极。绝缘层具有部分地暴露浮动导电焊盘的第一接触孔。像素电极经由第一接触孔电连接到浮动导电焊盘。

3. 发明申请

US20120292622A1 PIXEL STRUCTURE AND ELECTRICAL BRIDGING STRUCTURE 有权
标题翻译：像素结构和电桥结构
公开(公告)号：US20120292622A1
公开(公告)日：2012-11-22
申请号：US13349554
申请日：2012-01-12
申请人： Ching-Yang Liu , Wei-Hsiang Lin , Shu-Wei Chu , Hsiang-Chih Hsiao , Jhih-Jie Huang , Sai-Chang Liu , Yu-Hsing Liang
发明人： Ching-Yang Liu , Wei-Hsiang Lin , Shu-Wei Chu , Hsiang-Chih Hsiao , Jhih-Jie Huang , Sai-Chang Liu , Yu-Hsing Liang
IPC分类号： H01L51/52 , H05K1/09
CPC分类号： H01L27/3248
摘要： A pixel structure includes a thin film transistor device, an insulating layer disposed on the thin film transistor device, and a pixel electrode disposed on the insulating layer. The thin film transistor device includes a floating conductive pad disposed at one side of a semiconductor layer, and electrically connected to a source/drain electrode. The insulating layer has a first contact hole partially exposing the floating conductive pad. The pixel electrode is electrically connected to the floating conductive pad via the first contact hole.
摘要翻译：像素结构包括薄膜晶体管器件，设置在薄膜晶体管器件上的绝缘层和设置在绝缘层上的像素电极。薄膜晶体管器件包括设置在半导体层的一侧的浮置导电焊盘，并且电连接到源/漏电极。绝缘层具有部分地暴露浮动导电焊盘的第一接触孔。像素电极经由第一接触孔电连接到浮动导电焊盘。

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