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1. 发明授权

US08546846B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US08546846B2
公开(公告)日：2013-10-01
申请号：US13064186
申请日：2011-03-09
申请人： Min-Ho Kim , Martin F. Schubert , Jong Kyu Kim , F. Fred Schubert , Yongio Park , Cheolsoo Sone , Sukho Yoon
发明人： Min-Ho Kim , Martin F. Schubert , Jong Kyu Kim , F. Fred Schubert , Yongio Park , Cheolsoo Sone , Sukho Yoon
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/02 , H01L33/32
摘要： A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers and having a structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked; and an electron blocking layer disposed between the active layer and the p-type nitride semiconductor layer. The electron blocking layer has a superlattice structure in which two or more layers having different compositions are alternately stacked. An absolute value of a net polarization mismatch between a material, the material having a composition corresponding to an average composition of the superlattice structure, and a quantum barrier layer adjacent to the electron blocking layer among the plurality of quantum barrier layers is less than ⅔ of an absolute value of a net polarization mismatch between AlxG1-xN(0
摘要翻译：氮化物半导体发光器件包括n型和p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间的有源层，并且具有多个量子势垒层和一个或多个量子阱层交替堆叠的结构; 以及设置在有源层和p型氮化物半导体层之间的电子阻挡层。电子阻挡层具有超晶格结构，其中具有不同组成的两层或更多层交替堆叠。在多个量子势垒层中，具有与超晶格结构的平均组成对应的组成的材料和与电子阻挡层相邻的量子势垒层的材料之间的净偏振失配的绝对值小于2 / 3的具有等于材料的带隙能量和与其不同的组成的Al x G 1-x N（0

2. 发明申请

US20120132887A1 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20120132887A1
公开(公告)日：2012-05-31
申请号：US13064186
申请日：2011-03-09
申请人： Min-Ho Kim , Martin F. Schubert , Jong Kyu Kim , F. Fred Schubert , Yongio Park , Cheolsoo Sone , Sukho Yoon
发明人： Min-Ho Kim , Martin F. Schubert , Jong Kyu Kim , F. Fred Schubert , Yongio Park , Cheolsoo Sone , Sukho Yoon
IPC分类号： H01L33/06
CPC分类号： H01L33/04 , H01L33/02 , H01L33/32
摘要： A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers and having a structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked; and an electron blocking layer disposed between the active layer and the p-type nitride semiconductor layer. The electron blocking layer has a superlattice structure in which two or more layers having different compositions are alternately stacked. An absolute value of a net polarization mismatch between a material, the material having a composition corresponding to an average composition of the superlattice structure, and a quantum barrier layer adjacent to the electron blocking layer among the plurality of quantum barrier layers is less than ⅔ of an absolute value of a net polarization mismatch between AlxG1-xN(0
摘要翻译：氮化物半导体发光器件包括n型和p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间的有源层，并且具有多个量子势垒层和一个或多个量子阱层交替堆叠的结构; 以及设置在有源层和p型氮化物半导体层之间的电子阻挡层。电子阻挡层具有超晶格结构，其中具有不同组成的两层或更多层交替堆叠。在多个量子势垒层中，材料，具有对应于超晶格结构的平均组成的组成的材料和与电子阻挡层相邻的量子势垒层的材料之间的净偏振失配的绝对值小于具有等于材料的带隙能量和不同于其的组成的Al x G 1-x N（0

3. 发明申请

US20090050874A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：氮化物半导体发光器件
公开(公告)号：US20090050874A1
公开(公告)日：2009-02-26
申请号：US12195077
申请日：2008-08-20
申请人： Min-Ho Kim , Martin F. Schubert , Jong Kyu Kim , E. Fred Schubert , Yongjo Park , Cheolsoo Sone , Sukho Yoon
发明人： Min-Ho Kim , Martin F. Schubert , Jong Kyu Kim , E. Fred Schubert , Yongjo Park , Cheolsoo Sone , Sukho Yoon
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/04 , H01L33/32
摘要： A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, an active layer disposed between the n-type and p-type nitride semiconductor layers and having a structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked, and an electron blocking layer disposed between the active layer and the p-type nitride semiconductor layer. The electron blocking layer has greater bandgap energy than a quantum barrier layer adjacent to the electron blocking layer among the plurality of quantum barrier layers, and has a net polarization equal to or smaller than that of the quantum barrier layer adjacent thereto. The nitride semiconductor light emitting device can achieve high efficiency in every current region by minimizing a net polarization mismatch between a quantum barrier layer and an electron blocking layer.
摘要翻译：氮化物半导体发光器件包括n型和p型氮化物半导体层，有源层设置在n型和p型氮化物半导体层之间，并且具有多个量子势垒层和一个或多个量子阱层交替层叠，并且设置在有源层和p型氮化物半导体层之间的电子阻挡层。电子阻挡层具有比在多个量子势垒层中与电子阻挡层相邻的量子势垒层具有更大的带隙能量，并且具有等于或小于与其相邻的量子势垒层的净极化的净极化。氮化物半导体发光器件可以通过最小化量子势垒层和电子阻挡层之间的净偏振失配来实现每个电流区域的高效率。

4. 发明申请

US20110001123A1 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20110001123A1
公开(公告)日：2011-01-06
申请号：US12923195
申请日：2010-09-08
申请人： Min-Ho Kim , Martin F. Schubert , Jong Kyu Kim , E. Fred Schubert , Yongjo Park , Cheolsoo Sone , Sukho Yoon
发明人： Min-Ho Kim , Martin F. Schubert , Jong Kyu Kim , E. Fred Schubert , Yongjo Park , Cheolsoo Sone , Sukho Yoon
IPC分类号： H01L33/04
CPC分类号： H01L33/02 , H01L33/04 , H01L33/32
摘要： A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, and an active layer disposed between the n-type and p-type nitride semiconductor layers and having a stack structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked. A net polarization of the quantum barrier layer is smaller than or equal to a net polarization of the quantum well layer. A nitride semiconductor light emitting device can be provided, which can realize high efficiency even at high currents by minimizing the net polarization mismatch between the quantum barrier layer and the quantum well layer. Also, a high-efficiency nitride semiconductor light emitting device can be achieved by reducing the degree of energy-level bending of the quantum well layer.
摘要翻译：氮化物半导体发光器件包括n型和p型氮化物半导体层，以及设置在n型和p型氮化物半导体层之间的有源层，并且具有堆叠结构，其中多个量子势垒层和一个或更多量子阱层交替堆叠。量子势垒层的净极化小于或等于量子阱层的净极化。可以提供氮化物半导体发光器件，其可以通过最小化量子势垒层和量子阱层之间的净极化失配而在高电流下实现高效率。此外，可以通过降低量子阱层的能量级弯曲的程度来实现高效率的氮化物半导体发光器件。

5. 发明申请

US20090050875A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：氮化物半导体发光器件
公开(公告)号：US20090050875A1
公开(公告)日：2009-02-26
申请号：US12195088
申请日：2008-08-20
申请人： Min-Ho Kim , Martin F. Schubert , Jong Kyu Kim , E. Fred Schubert , Yongjo Park , Cheolsoo Sone , Sukho Yoon
发明人： Min-Ho Kim , Martin F. Schubert , Jong Kyu Kim , E. Fred Schubert , Yongjo Park , Cheolsoo Sone , Sukho Yoon
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/04 , H01L33/32
摘要： A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, and an active layer disposed between the n-type and p-type nitride semiconductor layers and having a stack structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked. A net polarization of the quantum barrier layer is smaller than or equal to a net polarization of the quantum well layer. A nitride semiconductor light emitting device can be provided, which can realize high efficiency even at high currents by minimizing the net polarization mismatch between the quantum barrier layer and the quantum well layer. Also, a high-efficiency nitride semiconductor light emitting device can be achieved by reducing the degree of energy-level bending of the quantum well layer.
摘要翻译：氮化物半导体发光器件包括n型和p型氮化物半导体层，以及设置在n型和p型氮化物半导体层之间的有源层，并且具有堆叠结构，其中多个量子势垒层和一个或更多量子阱层交替堆叠。量子势垒层的净极化小于或等于量子阱层的净极化。可以提供氮化物半导体发光器件，其可以通过最小化量子势垒层和量子阱层之间的净极化失配而在高电流下实现高效率。此外，可以通过降低量子阱层的能量级弯曲的程度来实现高效率的氮化物半导体发光器件。

6. 发明授权

US08502266B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US08502266B2
公开(公告)日：2013-08-06
申请号：US12923195
申请日：2010-09-08
申请人： Min-Ho Kim , Martin F. Schubert , Jong Kyu Kim , E. Fred Schubert , Yongjo Park , Cheolsoo Sone , Sukho Yoon
发明人： Min-Ho Kim , Martin F. Schubert , Jong Kyu Kim , E. Fred Schubert , Yongjo Park , Cheolsoo Sone , Sukho Yoon
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/04 , H01L33/32
摘要： A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, and an active layer disposed between the n-type and p-type nitride semiconductor layers and having a stack structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked. A net polarization of the quantum barrier layer is smaller than or equal to a net polarization of the quantum well layer. A nitride semiconductor light emitting device can be provided, which can realize high efficiency even at high currents by minimizing the net polarization mismatch between the quantum barrier layer and the quantum well layer. Also, a high-efficiency nitride semiconductor light emitting device can be achieved by reducing the degree of energy-level bending of the quantum well layer.
摘要翻译：氮化物半导体发光器件包括n型和p型氮化物半导体层，以及设置在n型和p型氮化物半导体层之间的有源层，并且具有堆叠结构，其中多个量子势垒层和一个或更多量子阱层交替堆叠。量子势垒层的净极化小于或等于量子阱层的净极化。可以提供氮化物半导体发光器件，其可以通过最小化量子势垒层和量子阱层之间的净极化失配而在高电流下实现高效率。此外，可以通过降低量子阱层的能量级弯曲的程度来实现高效率的氮化物半导体发光器件。

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