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    • 3. 发明授权
    • Thin film transistor array panel
    • 薄膜晶体管阵列面板
    • US09136283B2
    • 2015-09-15
    • US13616165
    • 2012-09-14
    • Min-Chul SongMan Hong NaYoung Je ChoSung Man KimSung-Hoon LimSoo Jung ChaeEu Gene Lee
    • Min-Chul SongMan Hong NaYoung Je ChoSung Man KimSung-Hoon LimSoo Jung ChaeEu Gene Lee
    • H01L29/04H01L27/12
    • H01L27/124
    • A thin film transistor array panel includes: a data line which extends in a column direction and transfers a data voltage; a first pixel electrode and a second pixel electrode connected to the data line and adjacent in a row direction; a first thin film transistor connected to the first pixel electrode and the data line, and including a first source electrode and a first drain electrode; and a second thin film transistor connected to the second pixel electrode and the data line, and including a second source electrode and a second drain electrode. The first pixel electrode is at the right of the data line, the second pixel electrode is at the left of the data line, and relative positions of the first source electrode and the first drain electrode are the same as relative positions of the second source electrode and the second drain electrode.
    • 薄膜晶体管阵列面板包括:沿列方向延伸并传送数据电压的数据线; 连接到数据线并且在行方向上相邻的第一像素电极和第二像素电极; 连接到第一像素电极和数据线的第一薄膜晶体管,并且包括第一源极和第一漏极; 以及连接到第二像素电极和数据线的第二薄膜晶体管,并且包括第二源电极和第二漏电极。 第一像素电极位于数据线的右侧,第二像素电极位于数据线的左侧,第一源电极和第一漏电极的相对位置与第二源极的相对位置相同 和第二漏电极。
    • 7. 发明授权
    • Method of manufacturing photoelectric device
    • 制造光电器件的方法
    • US08664015B2
    • 2014-03-04
    • US13568462
    • 2012-08-07
    • Sang-Jin ParkMin-Chul SongSung-Chan ParkDong-Seop KimWon-Gyun KimSang-Won Seo
    • Sang-Jin ParkMin-Chul SongSung-Chan ParkDong-Seop KimWon-Gyun KimSang-Won Seo
    • H01L21/00
    • H01L31/1804H01L21/223H01L21/2255H01L21/2256H01L21/268H01L31/02363H01L31/068Y02E10/547Y02P70/521
    • A method of manufacturing a solar cell including providing a semiconductor substrate having a first conductivity type; performing a first deposition process that includes forming a first doping material layer having a second conductivity type different from the first conductivity type; performing a drive-in process that includes heating the substrate having the first doping material layer thereon; performing a second deposition process after performing the drive-in process and including forming a second doping material layer on the first doping material layer, wherein the second doping material layer has the second conductivity type; locally heating portions of the substrate, the first doping material layer, and the second doping material layer with a laser to form a contact layer at a first surface of the substrate; and forming a first electrode on the contact layer and a second electrode on a second surface of the substrate opposite to the first surface.
    • 一种制造太阳能电池的方法,包括提供具有第一导电类型的半导体衬底; 执行包括形成具有不同于第一导电类型的第二导电类型的第一掺杂材料层的第一沉积工艺; 执行包括在其上加热具有第一掺杂材料层的衬底的驱入工艺; 在执行所述驱入工艺之后执行第二沉积工艺,并且包括在所述第一掺杂材料层上形成第二掺杂材料层,其中所述第二掺杂材料层具有第二导电类型; 用激光局部加热基板,第一掺杂材料层和第二掺杂材料层的部分,以在基板的第一表面上形成接触层; 以及在所述接触层上形成第一电极,在所述基板的与所述第一表面相对的第二表面上形成第二电极。