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1. 发明授权

US07068478B2 CPP GMR read head 失效
标题翻译： CPP GMR读头
公开(公告)号：US07068478B2
公开(公告)日：2006-06-27
申请号：US10631840
申请日：2003-07-31
申请人： Min Li , Kunliang Zhang , Rachid Sbiaa , Cheng T. Horng , Simon Liao , Kochan Ju
发明人： Min Li , Kunliang Zhang , Rachid Sbiaa , Cheng T. Horng , Simon Liao , Kochan Ju
IPC分类号： G11B5/39 , C21D1/04 , G11C11/00
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , C21D1/04 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01F41/303 , Y10T29/49034 , Y10T29/49044
摘要： Replacing ruthenium with rhodium as the AFM coupling layer in a synthetically pinned CPP GMR structure enables the AP1/AP2 thicknesses to be increased. This results in improved stability and allows the free layer and AFM layer thicknesses to be decreased, leading to an overall improvement in the device performance. Another key advantage of this structure is that the magnetic annealing requirements (to establish antiparallelism between AP1 and AP2) can be significantly relaxed.
摘要翻译：在合成固定的CPP GMR结构中用铑代替钌作为AFM偶合层，可以提高AP1 / AP2的厚度。这导致改进的稳定性并且允许降低自由层和AFM层厚度，导致器件性能的总体改善。这种结构的另一个关键优点是可以显着放松磁性退火要求（建立AP1和AP2之间的反平行度）。

2. 发明授权

US06857180B2 Method for fabricating a patterned synthetic longitudinal exchange biased GMR sensor 失效
标题翻译：用于制造图案化合成纵向交换偏置GMR传感器的方法
公开(公告)号：US06857180B2
公开(公告)日：2005-02-22
申请号：US10104802
申请日：2002-03-22
申请人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Feng Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
发明人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Feng Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
摘要翻译：提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。

3. 发明授权

US07400475B2 Patterned, synthetic longitudinally exchange biased GMR sensor 失效
标题翻译：图案化，合成纵向交换偏置GMR传感器
公开(公告)号：US07400475B2
公开(公告)日：2008-07-15
申请号：US11036529
申请日：2005-01-14
申请人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Fong Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
发明人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Fong Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
摘要翻译：提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。

4. 发明授权

US07134186B2 Method for fabricating a patterned, synthetic transversely exchanged biased GMR sensor 失效
标题翻译：用于制造图案化合成的横向交换的偏置GMR传感器的方法
公开(公告)号：US07134186B2
公开(公告)日：2006-11-14
申请号：US11036922
申请日：2005-01-14
申请人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Fong Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
发明人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Fong Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
摘要翻译：提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。

5. 发明授权

US06999286B2 Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads 失效
公开(公告)号：US06999286B2
公开(公告)日：2006-02-14
申请号：US11091099
申请日：2005-03-28
申请人： Bernard Dieny , Cheng T. Horng , Kochan Ju , Min Li , Simon Liao
发明人： Bernard Dieny , Cheng T. Horng , Kochan Ju , Min Li , Simon Liao
IPC分类号： G11B5/127
CPC分类号： H01F41/302 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996 , H01F10/3259 , H01F10/3272
摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

6. 发明授权

US06972934B2 Synthetic anti-parallel spin valve with thin AFM layer for very high density application 失效
标题翻译：具有薄AFM层的合成反并联自旋阀，用于非常高密度的应用
公开(公告)号：US06972934B2
公开(公告)日：2005-12-06
申请号：US10883930
申请日：2004-07-02
申请人： Cheng T. Horng , Kochan Ju , Mao-Min Chen , Min Li , Ru-Ying Tong , Simon Liao
发明人： Cheng T. Horng , Kochan Ju , Mao-Min Chen , Min Li , Ru-Ying Tong , Simon Liao
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01F10/14 , H01F10/16 , H01F10/32 , H01F41/14 , H01L43/08 , H01L43/10 , H01L43/12
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01F10/3295 , Y10T29/49032 , Y10T29/49034 , Y10T29/49039 , Y10T29/49044 , Y10T29/49055
摘要： A method for forming top and bottom spin valve sensors and the sensors so formed, the sensors having a strongly coupled SyAP pinned layer and an ultra-thin antiferromagnetic pinning layer. The two strongly coupled ferromagnetic layers comprising the SyAP pinned layer in the top valve configuration are separated by a Ru spacer layer approximately 3 angstroms thick, while the two layers in the bottom spin valve configuration are separated by a Rh spacer layer approximately 5 angstroms thick. This allows the use of an ultra thin MnPt antiferromagnetic pinning layer of thickness between approximately 80 and approximately 150 angstroms. The sensor structure produced thereby is suitable for high density applications.
摘要翻译：用于形成顶部和底部自旋阀传感器和如此形成的传感器的方法，所述传感器具有强耦合的SyAP钉扎层和超薄反铁磁钉扎层。包括顶阀配置中的SyAP钉扎层的两个强耦合铁磁层由大约3埃厚的Ru隔离层隔开，而底部自旋阀结构中的两个层被大约5埃厚的Rh间隔层隔开。这允许使用厚度在大约80和大约150埃之间的超薄MnPt反铁磁性钉扎层。由此生产的传感器结构适用于高密度应用。

7. 发明授权

US07152304B2 Method for fabricating a patterned, synthetic transverse exchange biased GMR sensor 失效
标题翻译：用于制造图案化合成横向交换偏置GMR传感器的方法
公开(公告)号：US07152304B2
公开(公告)日：2006-12-26
申请号：US11036959
申请日：2005-01-14
申请人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Fong Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
发明人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Fong Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
摘要翻译：提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。

8. 发明授权

US06775903B2 Method for fabricating a top magnetoresistive sensor element having a synthetic pinned layer 失效
标题翻译：用于制造具有合成固定层的顶部磁阻传感器元件的方法
公开(公告)号：US06775903B2
公开(公告)日：2004-08-17
申请号：US09953546
申请日：2001-09-17
申请人： Cheng T. Horng , Kochan Ju , Mao-Min Chen , Min Li , Ru-Ying Tong , Simon Liao
发明人： Cheng T. Horng , Kochan Ju , Mao-Min Chen , Min Li , Ru-Ying Tong , Simon Liao
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01F10/3295 , Y10T29/49032 , Y10T29/49034 , Y10T29/49039 , Y10T29/49044 , Y10T29/49055
摘要： A method for forming top and bottom spin valve sensors and the sensors so formed, the sensors having a strongly coupled SyAP pinned layer and an ultra-thin antiferromagnetic pinning layer. The two strongly coupled ferromagnetic layers comprising the SyAP pinned layer in the top valve configuration are separated by a Ru spacer layer approximately 3 angstroms thick, while the two layers in the bottom spin valve configuration are separated by a Rh spacer layer approximately 5 angstroms thick. This allows the use of an ultra thin MnPt antiferromagnetic pinning layer of thickness between approximately 80 and approximately 150 angstroms. The sensor structure produced thereby is suitable for high density applications.
摘要翻译：用于形成顶部和底部自旋阀传感器和如此形成的传感器的方法，所述传感器具有强耦合的SyAP钉扎层和超薄反铁磁钉扎层。包括顶阀配置中的SyAP钉扎层的两个强耦合铁磁层由大约3埃厚的Ru隔离层隔开，而底部自旋阀结构中的两个层被大约5埃厚的Rh间隔层隔开。这允许使用厚度在大约80和大约150埃之间的超薄MnPt反铁磁性钉扎层。由此生产的传感器结构适用于高密度应用。

9. 发明授权

US06816346B2 Ferromagnetic/antiferromagnetic bilayer, including decoupler, for longitudinal bias 失效
标题翻译：铁磁/反铁磁双层，包括去耦器，用于纵向偏置
公开(公告)号：US06816346B2
公开(公告)日：2004-11-09
申请号：US10791015
申请日：2004-03-02
申请人： You Feng Zheng , Kochan Ju , Cheng T. Horng , Simon Liao , Ru Ying Tong
发明人： You Feng Zheng , Kochan Ju , Cheng T. Horng , Simon Liao , Ru Ying Tong
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： As the dimensions of spin valve heads continue to be reduced, a number of difficulties are being encountered. One such is with the longitudinal bias when an external magnetic field can cause reversal of the hard magnet, thereby causing a hysteric response by the head. This coercivity reduction becomes more severe as the hard magnet becomes thinner. This problem has been overcome by inserting a decoupling layer between the antiferromagnetic layer that is used to stabilize the pinned layer of the spin valve itself and the soft ferromagnetic layer that is used for longitudinal biasing. This soft ferromagnetic layer is pinned by a second antiferromagnetic layer deposited on it on its far side away from the first antiferromagnetic layer. The presence of the decoupling layer ensures that the magnetization of the soft layer is determined only by the second antiferromagnetic layer. The inclusion of said decoupling layer allows more latitude in etch depth control during manufacturing.

10. 发明授权

US06721143B2 Ferromagnetic/antiferromagnetic bilayer, including decoupler, for longitudinal bias 失效
标题翻译：铁磁/反铁磁双层，包括去耦器，用于纵向偏置
公开(公告)号：US06721143B2
公开(公告)日：2004-04-13
申请号：US09933963
申请日：2001-08-22
申请人： You Feng Zheng , Kochan Ju , Cheng T. Horng , Simon Liao , Ru Ying Tong
发明人： You Feng Zheng , Kochan Ju , Cheng T. Horng , Simon Liao , Ru Ying Tong
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： As the dimensions of spin valve heads continue to be reduced, a number of difficulties are being encountered. One such is with the longitudinal bias when an external magnetic field can cause reversal of the hard magnet, thereby causing a hysteric response by the head. This coercivity reduction becomes more severe as the hard magnet becomes thinner. This problem has been overcome by inserting a decoupling layer between the antiferromagnetic layer that is used to stabilize the pinned layer of the spin valve itself and the soft ferromagnetic layer that is used for longitudinal biasing. This soft ferromagnetic layer is pinned by a second antiferromagnetic layer deposited on it on its far side away from the first antiferromagnetic layer. The presence of the decoupling layer ensures that the magnetization of the soft layer is determined only by the second antiferromagnetic layer. The inclusion of the decoupling layer allows more latitude in etch depth control during manufacturing.
摘要翻译：随着自旋阀头的尺寸不断减小，正在遇到许多困难。当外部磁场可能导致硬磁体的反转时，其中之一是具有纵向偏置，从而导致头部的歇斯底里响应。随着硬磁体变薄，矫顽力降低变得更严重。通过在用于稳定自旋阀本身的被钉扎层的反铁磁性层和用于纵向偏置的软铁磁层之间插入去耦层已经克服了这个问题。该软铁磁层由沉积在其上的远离第一反铁磁性层的远侧的第二反铁磁层固定。去耦层的存在确保了软层的磁化仅由第二反铁磁层确定。包含去耦层在制造过程中允许蚀刻深度控制的更大的纬度。

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