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1. 发明申请

US20110236757A1 POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：电力存储装置及其制造方法
公开(公告)号：US20110236757A1
公开(公告)日：2011-09-29
申请号：US13049407
申请日：2011-03-16
申请人： Mikio YUKAWA , Tamae MORIWAKA
发明人： Mikio YUKAWA , Tamae MORIWAKA
IPC分类号： H01M4/58 , H01M4/26 , C23C14/34 , C23C14/06
CPC分类号： H01M4/5825 , C23C14/0036 , C23C14/08 , C23C14/3407 , C23C14/3492 , H01M4/0404 , H01M4/0426 , H01M4/136 , H01M4/1397 , H01M4/366 , H01M10/052 , H01M2004/021 , Y10T29/49108 , Y10T29/49115
摘要： A power storage device with favorable battery characteristics and a manufacturing method thereof are provided. The power storage device includes at least a positive electrode and a negative electrode provided so as to face the positive electrode with an electrolyte provided therebetween. The positive electrode includes a collector and a film containing an active material over the collector. The film containing the active material contains LieFejPgOh satisfying relations 3.5≦h/g≦4.5, 0.6≦g/f≦1.1, and 0≦e/f≦1.3 and LiaFebPcOd satisfying relations 3.5≦d/c≦4.5, 0.6≦c/b≦1.8, and 0.7≦a/b≦2.8. The film containing the active material contains the LiaFebPcOd satisfying the relations 3.5≦d/c≦4.5, 0.6≦c/b≦1.8, and 0.7≦a/b≦2.8 in a region which is in contact with the electrolyte.
摘要翻译：提供了具有良好的电池特性的蓄电装置及其制造方法。蓄电装置至少包括正电极和负电极，所述正电极和负电极设置成面对正电极，其间设置有电解质。正极包括集电体和在集电体上含有活性材料的膜。含有活性物质的膜含有满足3.5＆nlE; h / g＆nlE; 4.5,0.6＆amp; nlE; g / f＆nlE; 1.1和0＆amp; nEE; e / f＆nlE; 1.3和LiaFebPcOd的关系的LiFejPgOh满足3.5＆nlE; d / c＆nlE; 4.5,0.6 ＆nlE; c / b＆nlE; 1.8和0.7＆nlE; a / b＆nlE; 2.8。含有活性物质的膜含有与电解质接触的区域中满足3.5＆nlE; d / c＆nlE; 4.5,0.6＆nlE; c / b＆nlE; 1.8和0.7＆nlE; a / b＆nlE; 2.8的关系的LiaFebPcOd。

2. 发明申请

US20110212363A1 POWER STORAGE SYSTEM AND MANUFACTURING METHOD THEREFOR AND SECONDARY BATTERY AND CAPACITOR 审中-公开
标题翻译：电力储存系统及其二次电池和电容器的制造方法
公开(公告)号：US20110212363A1
公开(公告)日：2011-09-01
申请号：US13033877
申请日：2011-02-24
申请人： Shunpei YAMAZAKI , Tamae MORIWAKA , Kazutaka KURIKI , Mikio YUKAWA
发明人： Shunpei YAMAZAKI , Tamae MORIWAKA , Kazutaka KURIKI , Mikio YUKAWA
IPC分类号： H01M10/26 , H01G9/00 , H01M4/48 , H01M4/505 , H01G9/042 , H01M4/26 , B82Y99/00
CPC分类号： H01G11/26 , H01G11/28 , H01G11/32 , H01G11/46 , H01M4/131 , H01M4/134 , H01M4/1395 , H01M4/366 , H01M4/587 , H01M4/62 , H01M10/0525 , H01M10/0561 , H01M2004/021 , Y02E60/13 , Y10T29/417 , Y10T29/49108 , Y10T29/49115
摘要： The present invention relates to a power storage system including a negative electrode which has a crystalline silicon film provided as a negative electrode active material on the surface of a current collector and contains a conductive oxide in a surface layer section of the crystalline silicon film. Alternatively, the present invention relates to a method for manufacturing a power storage system, which includes the step of forming an amorphous silicon film on a current collector, adding a catalytic element for promoting crystallization of the amorphous silicon, onto a surface of the amorphous silicon film, heating the amorphous silicon film with the catalytic element added to crystallize the amorphous silicon film and thereby form a crystalline silicon film, and using the crystalline silicon film as a negative electrode active material layer.
摘要翻译：本发明涉及一种蓄电系统，其包括负极，该负极具有在集电体的表面上设置为负极活性物质的结晶硅膜，并且在结晶硅膜的表层部分中含有导电氧化物。或者，本发明涉及一种用于制造蓄电系统的方法，其包括在集电器上形成非晶硅膜的步骤，将非晶硅的结晶的催化元素添加到非晶硅的表面上加热非晶硅膜，加入催化剂元素使非晶硅膜结晶，从而形成结晶硅膜，并使用结晶硅膜作为负极活性物质层。

3. 发明申请

US20120108029A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120108029A1
公开(公告)日：2012-05-03
申请号：US13295304
申请日：2011-11-14
申请人： Mikio YUKAWA , Nobuharu OHSAWA , Ryoji NOMURA , Yoshinobu ASAMI
发明人： Mikio YUKAWA , Nobuharu OHSAWA , Ryoji NOMURA , Yoshinobu ASAMI
IPC分类号： H01L21/02
CPC分类号： G11C13/0014 , B82Y10/00 , G11C2213/77 , G11C2213/79 , H01L27/285 , H01L51/0591
摘要： It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semiconductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over a first conductive layer and a second conductive layer over the organic compound layer including an insulator. Further, the semiconductor device is manufactured by forming a first conductive layer, discharging a composition of an insulator and an organic compound over the first conductive layer to form an organic compound layer including an insulator, and forming a second conductive layer over the organic compound layer including an insulator.
摘要翻译：本发明的一个目的是提供一种以高成本低成本制造高性能且高可靠性的存储器件和设置有存储器件的半导体器件的技术。半导体器件包括在第一导电层上包括绝缘体的有机化合物层和包含绝缘体的有机化合物层上的第二导电层。此外，半导体器件通过在第一导电层上形成第一导电层，排出绝缘体和有机化合物的组合物而形成包含绝缘体的有机化合物层，并在有机化合物层上形成第二导电层来制造包括绝缘体。

4. 发明申请

US20110186802A1 MEMORY DEVICE AND A SEMICONDUCTOR DEVICE 有权
标题翻译：存储器件和半导体器件
公开(公告)号：US20110186802A1
公开(公告)日：2011-08-04
申请号：US13085727
申请日：2011-04-13
申请人： Mikio YUKAWA
发明人： Mikio YUKAWA
IPC分类号： H01L45/00
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/0009 , G11C13/04 , G11C2213/77 , G11C2213/79 , H01L27/13 , H01L51/52
摘要： The present invention provides a memory device and a semiconductor device which have high reliability for writing at low cost. Furthermore, the present invention provides a memory device and a semiconductor device having a non-volatile memory element in which data can be additionally written and which can prevent forgery due to rewriting and the like. The memory element includes a first conductive layer, a second conductive layer, and an organic compound layer, which is formed between the first conductive layer and the second conductive layer, and which has a photosensitized oxidation reduction agent which can be an excited state by recombination energy of electrons and holes and a substance which can react with the photosensitized oxidation reduction agent.
摘要翻译：本发明提供了一种以低成本写入的高可靠性的存储器件和半导体器件。此外，本发明提供了一种具有非易失性存储元件的存储器件和半导体器件，其中可以额外地写入数据，并且可以防止由于重写等引起的伪造。存储元件包括形成在第一导电层和第二导电层之间的第一导电层，第二导电层和有机化合物层，并且其具有通过复合可以是激发态的光敏氧化还原剂电子和空穴的能量以及可与光敏氧化还原剂反应的物质。

5. 发明申请

US20110294010A1 POWER STORAGE DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：蓄电装置及其制造方法
公开(公告)号：US20110294010A1
公开(公告)日：2011-12-01
申请号：US13113237
申请日：2011-05-23
申请人： Mikio YUKAWA
发明人： Mikio YUKAWA
IPC分类号： H01M4/66 , H01G9/15 , C23C16/44 , C23C14/34 , C23C14/08
CPC分类号： H01G11/30 , C23C14/08 , C23C14/3414 , H01G11/26 , H01G11/32 , H01G11/50 , H01M4/0421 , H01M4/133 , H01M4/136 , H01M4/1393 , H01M4/1397 , H01M4/366 , H01M4/5805 , H01M4/587 , H01M10/0525 , Y02E60/13 , Y02T10/7011 , Y02T10/7022
摘要： It is an object to perform insertion and extraction of lithium ions effectively at a positive electrode of a power storage device so as to increase the reaction speed. Further, it is an object to increase the capacitance per unit volume of an active material of a positive electrode. A layer containing carbon and an active material layer are stacked at a positive electrode, whereby insertion and extraction of lithium ions are effectively performed at the positive electrode and reaction speed can be increased, even when the thickness of the positive electrode is increased. The active material layer interposed between the layers each containing carbon includes particulate crystals and therefore has high density, so that the active material can have large capacitance per unit volume.
摘要翻译：本发明的目的是在蓄电装置的正极上有效地进行锂离子的提取，提高反应速度。此外，其目的是增加正极活性物质的每单位体积电容。在正极层叠含有碳和活性物质层的层，能够在正极上有效地进行锂离子的插拔，即使增加正极的厚度，也能够提高反应速度。插入在各自含有碳的层之间的活性物质层包括颗粒状晶体，因此具有高密度，使得活性物质可以具有每单位体积的大的电容。

6. 发明申请

US20100295034A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100295034A1
公开(公告)日：2010-11-25
申请号：US12847352
申请日：2010-07-30
申请人： Hiroko ABE , Yuji IWAKI , Mikio YUKAWA , Shunpei YAMAZAKI , Yasuyuki ARAI , Yasuko WATANABE , Yoshitaka MORIYA
发明人： Hiroko ABE , Yuji IWAKI , Mikio YUKAWA , Shunpei YAMAZAKI , Yasuyuki ARAI , Yasuko WATANABE , Yoshitaka MORIYA
IPC分类号： H01L51/00 , H01L23/52 , H01L45/00
CPC分类号： H01L51/0579 , B82Y10/00 , G11C13/0014 , G11C13/04 , H01L27/112 , H01L27/115 , H01L51/0051 , H01L51/0059
摘要： It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna.
摘要翻译：本发明的目的是提供一种其中可以写入数据的半导体器件，除了制造半导体器件并且可以防止伪造的情况下。此外，本发明的另一个目的是提供一种廉价的半导体器件，其包括具有简单结构的存储器。半导体器件包括形成在单晶半导体衬底上的场效应晶体管，形成在场效应晶体管上的第一导电层，形成在第一导电层上的有机化合物层，以及形成在有机化合物层上的第二导电层，并且存储元件包括第一导电层，有机化合物和第二导电层。根据上述结构，可以通过拥有天线来提供可以进行数据的非接触式发送/接收的半导体器件。

7. 发明申请

US20100054294A1 SOLID-STATE DYE LASER 有权
标题翻译：固态激光
公开(公告)号：US20100054294A1
公开(公告)日：2010-03-04
申请号：US12549411
申请日：2009-08-28
申请人： Mikio YUKAWA , Tetsuo TSUTSUI
发明人： Mikio YUKAWA , Tetsuo TSUTSUI
IPC分类号： H01S3/20
CPC分类号： H01S3/168 , H01S3/025 , H01S3/08009 , H01S3/091 , H01S3/094034 , H01S3/23
摘要： To reduce the laser threshold by efficiently exciting a light-emitting body in a solid-state dye laser with light having high density, thereby facilitating emission of laser beams, and to miniaturize a solid-state dye laser including an excitation light source. A solid-state dye laser capable of emitting laser beams by efficiently introducing light from an excitation light source to a light-emitting body incorporated in an optical resonator structure and exciting the light-emitting body with light with high density, is realized.
摘要翻译：为了通过在具有高密度的光的固态染料激光器中有效地激发发光体来降低激光阈值，从而促进激光束的发射，并且使包括激发光源的固态染料激光器小型化。实现了能够通过有效地将来自激发光源的光引入到结合在光学谐振器结构中的发光体并且用高密度的光激发发光体来发射激光束的固态染料激光器。

8. 发明申请

US20110300445A1 POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：电力存储装置及其制造方法
公开(公告)号：US20110300445A1
公开(公告)日：2011-12-08
申请号：US13111079
申请日：2011-05-19
申请人： Satoshi MURAKAMI , Kazutaka KURIKI , Mikio YUKAWA
发明人： Satoshi MURAKAMI , Kazutaka KURIKI , Mikio YUKAWA
IPC分类号： H01M4/58 , C23C16/24 , H01G9/00 , H01M4/1395 , H01G9/042
CPC分类号： H01G11/24 , C23C16/24 , H01G11/30 , H01G11/46 , H01M4/0428 , H01M4/134 , H01M4/1395 , H01M4/48 , H01M4/52 , H01M4/661 , H01M10/0525 , H01M2220/20 , H01M2220/30 , Y02E60/122 , Y02E60/13 , Y02P70/54 , Y02T10/7022 , Y10T29/417 , Y10T29/49115
摘要： A power storage device which can have an improved performance such as higher discharge capacity and in which deterioration due to peeling of an active material layer or the like is difficult to occur, and a method for manufacturing the power storage device are provided. The power storage device includes a current collector, a mixed layer formed over the current collector, and a crystalline silicon layer which is formed over the mixed layer and functions as an active material layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions projecting over the crystalline silicon region. The whisker-like crystalline silicon region includes a protrusion having a bending or branching portion.
摘要翻译：能够提高放电容量等改善性能的蓄电装置，由于活性物质层等的剥离而导致的劣化难以发生，并且提供了蓄电装置的制造方法。蓄电装置包括集电体，在集电体上形成的混合层，以及形成在混合层上并用作活性物质层的晶体硅层。结晶硅层包括晶体硅区域和晶须状晶体硅区域，其包括在结晶硅区域上突出的多个突起。晶须状结晶硅区域包括具有弯曲或分支部分的突起。

9. 发明申请

US20110031469A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110031469A1
公开(公告)日：2011-02-10
申请号：US12904313
申请日：2010-10-14
申请人： Shunpei YAMAZAKI , Hiroko ABE , Yukie NEMOTO , Ryoji NOMURA , Mikio YUKAWA
发明人： Shunpei YAMAZAKI , Hiroko ABE , Yukie NEMOTO , Ryoji NOMURA , Mikio YUKAWA
IPC分类号： H01L45/00 , H01L29/786
CPC分类号： H01L27/2463 , B82Y10/00 , G11C13/00 , G11C13/0004 , G11C13/0014 , G11C13/0016 , G11C13/0069 , G11C17/143 , G11C17/16 , G11C17/18 , G11C2013/009 , G11C2213/77 , G11C2213/79 , H01L21/8221 , H01L23/66 , H01L27/0688 , H01L27/1266 , H01L27/2409 , H01L27/2436 , H01L27/283 , H01L45/06 , H01L45/065 , H01L45/1213 , H01L45/1233 , H01L45/141 , H01L45/143 , H01L45/144 , H01L51/0098 , H01L2223/6677 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
摘要： The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.
摘要翻译：本发明提供了一种非易失性，易于制造并且可另外写入的半导体器件。本发明的半导体器件包括多个晶体管，用作晶体管的源极布线或漏极布线的导电层，以及与多个晶体管之一重叠的存储元件，以及用作天线。存储元件包括第一导电层，有机化合物层和相变层，以及依次层叠的第二导电层。用作天线的导电层和用作多个晶体管的源极布线或漏极布线的导电层设置在同一层上。

10. 发明申请

US20110294011A1 ENERGY STORAGE DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：能源储存装置及其制造方法
公开(公告)号：US20110294011A1
公开(公告)日：2011-12-01
申请号：US13109083
申请日：2011-05-17
申请人： Kazutaka KURIKI , Mikio YUKAWA
发明人： Kazutaka KURIKI , Mikio YUKAWA
IPC分类号： H01M4/58 , B05D5/12 , H01M4/04 , H01G9/00 , H01G9/04
CPC分类号： H01G11/26 , H01G11/30 , H01M4/0428 , H01M4/134 , H01M4/661 , Y02E60/13
摘要： An energy storage device is provided in which a discharge capacity can be high and/or in which degradation of an electrode due to repetitive charge and discharge can be reduced. An electrode of the energy storage device which includes a crystalline silicon layer serving as an active material layer is provided. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region having a plurality of protrusions projected upward from the crystalline silicon region. The protrusions include a first protrusion and a second protrusion; the second protrusion has a larger length along the axis and a sharper tip than the first protrusion.
摘要翻译：提供了一种放电容量可以较高的能量存储装置和/或能够减少由于重复充放电导致的电极劣化的能量存储装置。提供了包含作为活性物质层的结晶硅层的储能装置的电极。晶体硅层包括晶体硅区域和具有从晶体硅区域向上突出的多个突起的晶须状结晶硅区域。突起包括第一突起和第二突起; 所述第二突起沿着所述轴线具有较大的长度，并且比所述第一突起更尖锐。

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