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1. 发明授权

US07723135B2 Manufacturing method of display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US07723135B2
公开(公告)日：2010-05-25
申请号：US12022201
申请日：2008-01-30
申请人： Akio Yazaki , Mikio Hongo , Takeshi Sato , Takahiro Kamo
发明人： Akio Yazaki , Mikio Hongo , Takeshi Sato , Takahiro Kamo
IPC分类号： H01L21/00
CPC分类号： H01L21/02691 , B23K26/032 , H01L21/02532 , H01L21/02678 , H01L21/02683 , H01L21/02686 , H01L27/1214 , H01L27/1285
摘要： In crystallization of a silicon film by annealing with a linear-shaped laser beam having an ununiform width of the short axis of the beam, the profile (intensity distribution) of the laser beam is evaluated, and the result is fed back to an oscillating condition of the laser beam or an optical condition which projects this onto the silicon film, whereby a display device comprising a high-quality crystalline silicon film is produced. In the present invention, (1) the energy distribution of the linear-shaped laser beam is measured by a detector type CCD camera moved stepwise in the directions that its long axis and short axis extend, respectively, (2) a value obtained by dividing an accumulated intensity E in the long axis direction obtained by accumulating the detected signals in a direction parallel to the short axis by the square root of the width W of the short axis of the linear-shaped laser beam in each position in the long axis: E/√{square root over ( )}(W), is determined in all the positions of a cross section of the linear-shaped laser beam. Since a laser power which is suitable for lateral crystal growth of the silicon film has a close correlation with E/√{square root over ( )}(W), this value is used as an evaluation result mentioned above in the present invention.
摘要翻译：在用具有不均匀宽度的光束的线形激光束退火的硅膜的结晶中，评估激光束的轮廓（强度分布），并将结果反馈到振荡条件的激光束或将其投影到硅膜上的光学条件，由此产生包括高质量结晶硅膜的显示装置。在本发明中，（1）线状激光的能量分布通过分别沿其长轴和短轴延伸的方向逐步移动的检测器型CCD照相机来测量，（2）通过分割获得的值通过在长轴方向的各位置上将线性激光束的短轴的宽度W的平方根累积到与短轴平行的方向上的检测信号而获得的长轴方向上的累积强度E：在线形激光束的横截面的所有位置中确定E /√{平方根超过（）}（W）。由于适合于硅膜的横向晶体生长的激光功率与E /√{平方根超过（）}（W）具有密切相关性，所以将该值用作本发明上述的评估结果。

2. 发明申请

US20080188012A1 MANUFACTURING METHOD OF DISPLAY DEVICE 有权
标题翻译：显示装置的制造方法
公开(公告)号：US20080188012A1
公开(公告)日：2008-08-07
申请号：US12022201
申请日：2008-01-30
申请人： Akio Yazaki , Mikio Hongo , Takeshi Sato , Takahiro Kamo
发明人： Akio Yazaki , Mikio Hongo , Takeshi Sato , Takahiro Kamo
IPC分类号： H01L21/66
CPC分类号： H01L21/02691 , B23K26/032 , H01L21/02532 , H01L21/02678 , H01L21/02683 , H01L21/02686 , H01L27/1214 , H01L27/1285
摘要： In crystallization of a silicon film by annealing with a linear-shaped laser beam having an ununiform width of the short axis of the beam, the profile (intensity distribution) of the laser beam is evaluated, and the result is fed back to an oscillating condition of the laser beam or an optical condition which projects this onto the silicon film, whereby a display device comprising a high-quality crystalline silicon film is produced. In the present invention, (1) the energy distribution of the linear-shaped laser beam is measured by a detector type CCD camera moved stepwise in the directions that its long axis and short axis extend, respectively, (2) a value obtained by dividing an accumulated intensity E in the long axis direction obtained by accumulating the detected signals in a direction parallel to the short axis by the square root of the width W of the short axis of the linear-shaped laser beam in each position in the long axis: E/√{square root over ( )}(W), is determined in all the positions of a cross section of the linear-shaped laser beam. Since a laser power which is suitable for lateral crystal growth of the silicon film has a close correlation with E/√{square root over ( )}(W), this value is used as an evaluation result mentioned above in the present invention.
摘要翻译：在用具有不均匀宽度的光束的线形激光束退火的硅膜的结晶中，评估激光束的轮廓（强度分布），并将结果反馈到振荡条件的激光束或将其投影到硅膜上的光学条件，由此产生包括高质量结晶硅膜的显示装置。在本发明中，（1）线状激光的能量分布通过分别沿其长轴和短轴延伸的方向逐步移动的检测器型CCD照相机来测量，（2）通过分割获得的值通过在长轴方向的各位置上将线性激光束的短轴的宽度W的平方根累积到与短轴平行的方向上的检测信号而获得的长轴方向上的累积强度E：在线性激光束的横截面的所有位置中确定E /√{（W））的平方根，由于适合于硅膜的横向晶体生长的激光功率与 E（√）（（W））的平方根，将该值用作本发明上述的评价结果。

3. 发明授权

US07811910B2 Manufacturing method of display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US07811910B2
公开(公告)日：2010-10-12
申请号：US12043159
申请日：2008-03-06
申请人： Mikio Hongo , Akio Yazaki , Takahiro Kamo
发明人： Mikio Hongo , Akio Yazaki , Takahiro Kamo
IPC分类号： H01L21/268
CPC分类号： H01L21/268 , H01L21/02675 , H01L27/1285
摘要： In crystallization of a silicon film by annealing using a linear-shaped laser beam having a width of the short axis of the beam is ununiform, the profile (intensity distribution) of the laser beam is evaluated and the results are fed back to a condition of oscillating the laser beam or an optical condition for projecting the laser beam onto the silicon film, whereby a display device comprising a high-quality crystalline silicon film is manufactured. The energy distribution of the linear-shaped laser beam is determined by a detector type CCD camera which is moved stepwise in the directions in which its long axis and short axis extend, respectively, and a value obtained by dividing an accumulated intensity E in the long axis direction obtained by accumulating the detected signal in the direction parallel to the short axis by the square root of the width W of the short axis of the above linear-shaped laser beam in each position of the long axis: E/√{square root over ( )}(W), is determined in all the positions of a cross section of the linear-shaped laser beam to evaluate the above intensity distribution.
摘要翻译：在通过使用具有波束的短轴宽度的线形激光束进行退火的硅膜的结晶化不均匀的情况下，评价激光束的轮廓（强度分布），并将结果反馈到振荡激光束或将激光束投射到硅膜上的光学条件，由此制造包括高质量结晶硅膜的显示装置。线状激光束的能量分布由分别在其长轴和短轴延伸的方向上逐步移动的检测器型CCD照相机确定，并且通过将长时间的累积强度E除以获得的值将上述线状激光的短轴的宽度W的平方根在长轴的各位置上沿着与短轴平行的方向累积检测信号而得到的轴方向：E /√{平方根在线形激光束的横截面的所有位置中确定over（）}（W），以评估上述强度分布。

4. 发明申请

US20080227274A1 MANUFACTURING METHOD OF DISPLAY DEVICE 有权
标题翻译：显示装置的制造方法
公开(公告)号：US20080227274A1
公开(公告)日：2008-09-18
申请号：US12043159
申请日：2008-03-06
申请人： Mikio HONGO , Akio Yazaki , Takahiro Kamo
发明人： Mikio HONGO , Akio Yazaki , Takahiro Kamo
IPC分类号： H01L21/268
CPC分类号： H01L21/268 , H01L21/02675 , H01L27/1285
摘要： In crystallization of a silicon film by annealing using a linear-shaped laser beam having a width of the short axis of the beam is ununiform, the profile (intensity distribution) of the laser beam is evaluated and the results are fed back to a condition of oscillating the laser beam or an optical condition for projecting the laser beam onto the silicon film, whereby a display device comprising a high-quality crystalline silicon film is manufactured. The energy distribution of the linear-shaped laser beam is determined by a detector type CCD camera which is moved stepwise in the directions in which its long axis and short axis extend, respectively, and a value obtained by dividing an accumulated intensity E in the long axis direction obtained by accumulating the detected signal in the direction parallel to the short axis by the square root of the width W of the short axis of the above linear-shaped laser beam in each position of the long axis: E/√{square root over ( )}(W), is determined in all the positions of a cross section of the linear-shaped laser beam to evaluate the above intensity distribution.
摘要翻译：在通过使用具有波束的短轴宽度的线形激光束进行退火的硅膜的结晶化不均匀的情况下，评价激光束的轮廓（强度分布），并将结果反馈到振荡激光束或将激光束投射到硅膜上的光学条件，由此制造包括高质量结晶硅膜的显示装置。线状激光束的能量分布由分别在其长轴和短轴延伸的方向上逐步移动的检测器型CCD照相机确定，并且通过将长时间的累积强度E除以获得的值将上述线状激光的短轴的宽度W的平方根在长轴的各位置上沿着与短轴平行的方向累积检测信号而得到的轴方向：E /√{平方根在线形激光束的横截面的所有位置中确定（（W））以评估上述强度分布。

5. 发明申请

US20070155140A1 Manufacturing method of semiconductor film and image display device 有权
公开(公告)号：US20070155140A1
公开(公告)日：2007-07-05
申请号：US11711623
申请日：2007-02-28
申请人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
发明人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02691 , C30B1/06 , H01L21/02683 , H01L21/02686 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)

6. 发明授权

US07397831B2 Laser annealing apparatus and annealing method of semiconductor thin film using the same 有权
标题翻译：激光退火装置及使用其的半导体薄膜的退火方法
公开(公告)号：US07397831B2
公开(公告)日：2008-07-08
申请号：US10986936
申请日：2004-11-15
申请人： Mikio Hongo , Akio Yazaki , Mutsuko Hatano
发明人： Mikio Hongo , Akio Yazaki , Mutsuko Hatano
IPC分类号： H01S3/00
CPC分类号： B23K26/0738 , B23K26/0853 , G02B27/0927 , G02B27/0966 , H01L21/02678 , H01L21/02683 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L27/1296
摘要： A laser beam temporally modulated in amplitude by a modulator and shaped into a long and narrow shape by a beam shaper is rotated around the optical axis of an image rotator inserted between the beam shaper and a substrate. Thus, the longitudinal direction of the laser beam having the long and narrow shape is rotated around the optical axis on the substrate. In order to perform annealing in a plurality of directions on the substrate, the laser beam shaped into the long and narrow shape is rotated on the substrate while a stage mounted with the substrate is moved only in two directions, that is, X- and Y-directions.In such a manner, the substrate can be scanned at a high speed with a continuous wave laser beam modulated temporally in amplitude and shaped into a long and narrow shape, without rotating the substrate. Thus, a semiconductor film can be annealed.
摘要翻译：通过调制器暂时调制振幅的激光束并通过光束整形器成形为长而窄的形状围绕插入在光束整形器和基板之间的图像旋转器的光轴旋转。因此，具有长而窄形状的激光束的纵向方向围绕基板上的光轴旋转。为了在基板上沿多个方向进行退火，将形成为长而窄的形状的激光束在基板上旋转，而安装有基板的台仅沿两个方向移动，即，X轴和Y轴方向以这样一种方式，可以用波长时间上调制并成形为长而窄的连续波激光束高速扫描基板，而不旋转基板。因此，半导体膜可以退火。

7. 发明申请

US20050169330A1 Laser annealing apparatus and annealing method of semiconductor thin film 审中-公开
标题翻译：半导体薄膜的激光退火装置和退火方法
公开(公告)号：US20050169330A1
公开(公告)日：2005-08-04
申请号：US10987003
申请日：2004-11-15
申请人： Mikio Hongo , Akio Yazaki , Mutsuko Hatano , Takeshi Noda , Yukio Takasaki
发明人： Mikio Hongo , Akio Yazaki , Mutsuko Hatano , Takeshi Noda , Yukio Takasaki
IPC分类号： H01L21/324 , B23K26/073 , C30B13/24 , C30B29/06 , H01L21/20 , H01L21/268 , H01L29/04 , H01L29/786 , H01S3/00 , H01L21/00 , H01L21/84 , H01L21/76 , C30B1/00 , H01L21/36
CPC分类号： H01L21/02691 , B23K26/0738 , C30B13/24 , C30B29/06 , H01L21/02678 , H01L21/02683 , H01L21/2026 , H01L29/04 , H01L29/78675
摘要： When a laser bean temporally modulated in amplitude by a modulator is shaped into a long and narrow beam by a beam shaper, the scanning-direction size of the long and narrow beam shaped by the beam shaper is selected to be in a range of from 2 to 10 microns, preferably in a range of from 2 to 4 microns and the scanning speed of the beam is selected to be in a range of from 300 to 1000 mm/s, preferably in a range of from 500 to 1000 m/s. As a result, damage of the silicon thin film can be suppressed while energy utilizing efficiency of the laser beam can be improved. Accordingly, laterally grown crystals (belt-like crystals) improved in throughput can be obtained on a required region of a substrate scanned and irradiated with the laser beam.
摘要翻译：当通过调制器在振幅时间上调制的激光束通过光束整形器成形为长而窄的光束时，由光束整形器成形的长而窄的光束的扫描方向尺寸被选择在2 至10微米，优选在2至4微米的范围内，并且光束的扫描速度选择在300至1000mm / s的范围内，优选在500至1000m / s的范围内。结果，可以抑制硅薄膜的损伤，同时提高激光束的能量利用效率。因此，可以在扫描并照射激光束的基板的所需区域上获得提高生产量的横向生长的晶体（带状晶体）。

8. 发明授权

US07202144B2 Manufacturing method of semiconductor film and image display device 有权
标题翻译：半导体薄膜和图像显示装置的制造方法
公开(公告)号：US07202144B2
公开(公告)日：2007-04-10
申请号：US11007188
申请日：2004-12-09
申请人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
发明人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
IPC分类号： H01L21/20
CPC分类号： H01L21/02691 , C30B1/06 , H01L21/02683 , H01L21/02686 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)
摘要翻译：通过将激光或基板扫描到半导体薄膜的任意区域上并在其上照射激光来制造半导体薄膜。半导体薄膜由基本上带状的晶体形成，使得晶粒在扫描方向上在基板上在XY坐标上生长，其中激光的光束尺寸W（mum）的值x基本上在与扫描方向相同的方向被定义为X轴，其中扫描速度Vs（m / s）的值y被定义为Y轴，在满足以下所有条件的区域内进行结晶处理：条件1：光束尺寸W大于激光束的波长，条件2：扫描速度Vs小于晶体生长速度的上限，条件3：xx（1 / y）<25μs。

9. 发明申请

US20050214959A1 Semiconductor thin film manufacturing method 有权
标题翻译：半导体薄膜制造方法
公开(公告)号：US20050214959A1
公开(公告)日：2005-09-29
申请号：US11030065
申请日：2005-01-07
申请人： Mutsuko Hatano , Shinya Yamaguchi , Mikio Hongo , Akio Yazaki , Takeshi Noda
发明人： Mutsuko Hatano , Shinya Yamaguchi , Mikio Hongo , Akio Yazaki , Takeshi Noda
IPC分类号： G02F1/1368 , H01L21/20 , H01L21/336 , H01L21/66 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786
CPC分类号： H01L21/02683 , H01L21/0268 , H01L21/02691 , H01L21/2026 , H01L22/12 , H01L27/1214 , H01L27/1285 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor thin film. includes a highly sensitive inspection method for detecting lateral crystals and a crystallizing method. In the crystallizing method, the time-based pulse width of a laser SXL is modulated and an approximate band-like crystal silicon film SPSI is formed in a desired region while scanning the substrate SUB1 bidirectionally in the X and −X directions. In the inspection method, an inspection beam PRO1 is irradiated to the substrate just after the laser SXL is turned off. A protrusion TOKI will be formed on the silicon film portion where the laser SXL is turned off if the state of the silicon film is that of a lateral crystal SPSI. The inspection beam PRO1 is scattered by the protrusion TOKI and observed by a detector. If the state of the silicon film is granular crystal GGSI or aggregated film AGSI, such a protrusion TOKI is not observed.
摘要翻译：一种形成半导体薄膜的方法。包括用于检测横向晶体的高灵敏度检查方法和结晶方法。在结晶方法中，激光SXL的时间脉冲宽度被调制，并且在X和-X方向双向扫描衬底SUB 1的同时，在所需区域中形成近似带状晶体硅膜SPSI。在检查方法中，在激光SXL关闭之后，将检查光束PRO 1照射到基板。如果硅膜的状态是横向晶体SPSI的状态，则在硅膜部分上形成突起TOKI，其中激光SXL截止。检测光束PRO 1由突出部TOKI散射并由检测器观测。如果硅膜的状态是粒状晶体GGSI或聚集膜AGSI，则不观察到这样的突起TOKI。

10. 发明申请

US20050170618A1 Manufacturing method of semiconductor film and image display device 有权
标题翻译：半导体薄膜和图像显示装置的制造方法
公开(公告)号：US20050170618A1
公开(公告)日：2005-08-04
申请号：US11007188
申请日：2004-12-09
申请人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
发明人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
IPC分类号： G02F1/1368 , C30B1/06 , G02F1/133 , H01L21/20 , H01L21/268 , H01L21/324 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01L21/00 , C30B1/00 , H01L21/36
CPC分类号： H01L21/02691 , C30B1/06 , H01L21/02683 , H01L21/02686 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)
摘要翻译：通过将激光或基板扫描到半导体薄膜的任意区域上并在其上照射激光来制造半导体薄膜。半导体薄膜由基本上带状的晶体形成，使得晶粒在扫描方向上在基板上在XY坐标上生长，其中激光的光束尺寸W（mum）的值x基本上在与扫描方向相同的方向被定义为X轴，其中扫描速度Vs（m / s）的值y被定义为Y轴，在满足以下所有条件的区域内进行结晶处理：条件1：光束尺寸W大于激光束的波长，条件2：扫描速度Vs小于晶体生长速度的上限，条件3：xx（1 / y）<25μs。

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