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1. 发明申请

US20070045768A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20070045768A1
公开(公告)日：2007-03-01
申请号：US11465151
申请日：2006-08-17
申请人： Miki YAMANKA , Yukio HIRAOKA , Osamu ISHIKAWA
发明人： Miki YAMANKA , Yukio HIRAOKA , Osamu ISHIKAWA
IPC分类号： H01L29/00
CPC分类号： H01L21/761 , H01L21/76224 , H01L27/0921 , H01L29/0821 , H01L29/7322
摘要： The present invention aims at providing a semiconductor device that can prevent quality degradation of a signal caused by noise, reduce a malfunction of a circuit caused by latch-up, and secure favorable isolation, and the semiconductor device includes: a first layer with a resistivity higher than 10 Ωcm and lower than 1 kΩcm which is formed in a semiconductor substrate; a second layer formed on a surface of the semiconductor substrate so as to be located above the first layer; two semiconductor devices formed in the second layer or on the second layer; and a trench-type insulating region which is located between the two semiconductor devices, is formed in the semiconductor substrate so as to reach the first layer from the surface of the semiconductor substrate, and electrically isolates the two semiconductor devices.
摘要翻译：本发明的目的在于提供一种半导体装置，其能够防止由噪声引起的信号的质量劣化，减少由闩锁引起的电路的故障，并确保良好的隔离，并且半导体器件包括：具有电阻率的第一层高于10Ωgmm且低于形成在半导体衬底中的1KOmegacm; 形成在所述半导体衬底的表面上以便位于所述第一层之上的第二层; 形成在第二层或第二层上的两个半导体器件; 并且在半导体衬底中形成位于两个半导体器件之间的沟槽型绝缘区域，以从半导体衬底的表面到达第一层，并且电隔离两个半导体器件。

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