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1. 发明申请

US20100148170A1 FIELD EFFECT TRANSISTOR AND DISPLAY APPARATUS 审中-公开
标题翻译：场效应晶体管和显示装置
公开(公告)号：US20100148170A1
公开(公告)日：2010-06-17
申请号：US12634319
申请日：2009-12-09
申请人： Miki Ueda , Tatsuya Iwasaki , Naho Itagaki , Amita Goyal
发明人： Miki Ueda , Tatsuya Iwasaki , Naho Itagaki , Amita Goyal
IPC分类号： H01L33/00 , H01L29/12 , H01L21/04 , H01L29/78 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/78696
摘要： A field-effect transistor provided with at least a semiconductor layer and a gate electrode disposed over the above-described semiconductor layer with a gate insulating film therebetween, wherein the above-described semiconductor layer includes a first amorphous oxide semiconductor layer having at least one element selected from the group of Zn and In, and a second amorphous oxide semiconductor layer having at least one element selected from the group of Ge and Si and at least one element selected from the group of Zn and In. The composition of the above-described first amorphous oxide semiconductor layer is different from the composition of the above-described second amorphous oxide semiconductor layer.
摘要翻译：一种场效应晶体管，其至少设置有半导体层和设置在上述半导体层上的栅极，其间具有栅极绝缘膜，其中上述半导体层包括具有至少一个元素的第一非晶氧化物半导体层选自Zn和In组，以及具有选自Ge和Si中的至少一种元素的第二非晶氧化物半导体层和选自Zn和In中的至少一种元素。上述第一非晶氧化物半导体层的组成与上述第二非晶氧化物半导体层的组成不同。

2. 发明授权

US08212248B2 Amorphous oxide and field effect transistor 有权
标题翻译：无定形氧化物和场效应晶体管
公开(公告)号：US08212248B2
公开(公告)日：2012-07-03
申请号：US12742977
申请日：2008-12-25
申请人： Naho Itagaki , Amita Goyal , Tatsuya Iwasaki
发明人： Naho Itagaki , Amita Goyal , Tatsuya Iwasaki
IPC分类号： H01L29/10
CPC分类号： H01L29/7869
摘要： An amorphous oxide at least includes: at least one element selected from the group consisting of In, Zn, and Sn; and Mo. An atomic composition ratio of Mo to a number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 5 atom % or lower.
摘要翻译：无定形氧化物至少包括：选自In，Zn和Sn中的至少一种元素; 和Mo。无定形氧化物中Mo与全部金属原子数的原子组成比为0.1原子％以上且5原子％以下。

3. 发明申请

US20110175081A1 THIN FILM TRANSISTOR AND DISPLAY 有权
标题翻译：薄膜晶体管和显示器
公开(公告)号：US20110175081A1
公开(公告)日：2011-07-21
申请号：US12809096
申请日：2009-01-30
申请人： Amita Goyal , Naho Itagaki , Tatsuya Iwasaki
发明人： Amita Goyal , Naho Itagaki , Tatsuya Iwasaki
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , C23C14/086
摘要： A thin film transistor includes a gate electrode, a gate insulation layer, a channel layer, a source electrode, and a drain electrode formed on a substrate, in which: the channel layer contains indium, germanium, and oxygen; and the channel layer has a compositional ratio expressed by In/(In+Ge) of 0.5 or more and 0.97 or less.
摘要翻译：薄膜晶体管包括形成在基板上的栅电极，栅极绝缘层，沟道层，源电极和漏电极，其中：沟道层包含铟，锗和氧; 并且沟道层具有由In /（In + Ge）表示的组成比为0.5以上且0.97以下。

4. 发明授权

US08742412B2 Thin film transistor using an oxide semiconductor and display 有权
标题翻译：使用氧化物半导体和显示器的薄膜晶体管
公开(公告)号：US08742412B2
公开(公告)日：2014-06-03
申请号：US12809096
申请日：2009-01-30
申请人： Amita Goyal , Naho Itagaki , Tatsuya Iwasaki
发明人： Amita Goyal , Naho Itagaki , Tatsuya Iwasaki
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , C23C14/086
摘要： A thin film transistor includes a gate electrode, a gate insulation layer, a channel layer, a source electrode, and a drain electrode formed on a substrate, in which: the channel layer contains indium, germanium, and oxygen; and the channel layer has a compositional ratio expressed by In/(In+Ge) of 0.5 or more and 0.97 or less.
摘要翻译：薄膜晶体管包括形成在基板上的栅电极，栅极绝缘层，沟道层，源电极和漏电极，其中：沟道层包含铟，锗和氧; 并且沟道层具有由In /（In + Ge）表示的组成比为0.5以上且0.97以下。

5. 发明授权

US08314425B2 Field-effect transistor using amorphouse oxide 有权
标题翻译：使用氧化铝氧化物的场效应晶体管
公开(公告)号：US08314425B2
公开(公告)日：2012-11-20
申请号：US12747601
申请日：2009-01-20
申请人： Tatsuya Iwasaki , Amita Goyal , Naho Itagaki
发明人： Tatsuya Iwasaki , Amita Goyal , Naho Itagaki
IPC分类号： H01L29/04
CPC分类号： H01L29/7869
摘要： A field-effect transistor includes at least a channel layer, a gate insulating layer, a source electrode, a drain electrode, and a gate electrode, which are formed on a substrate. The channel layer is made of an amorphous oxide material that contains at least In and B, and the amorphous oxide material has an element ratio B/(In+B) of 0.05 or higher and 0.29 or lower.
摘要翻译：场效应晶体管至少包括形成在基板上的沟道层，栅极绝缘层，源电极，漏电极和栅电极。沟道层由至少含有In和B的无定形氧化物材料制成，无定形氧化物材料的元素比B /（In + B）为0.05以上且0.29以下。

6. 发明申请

US20100276685A1 AMORPHOUS OXIDE AND FIELD EFFECT TRANSISTOR 有权
标题翻译：非晶氧化物和场效应晶体管
公开(公告)号：US20100276685A1
公开(公告)日：2010-11-04
申请号：US12742977
申请日：2008-12-25
申请人： Naho Itagaki , Amita Goyal , Tatsuya Iwasaki
发明人： Naho Itagaki , Amita Goyal , Tatsuya Iwasaki
IPC分类号： H01L29/12
CPC分类号： H01L29/7869
摘要： An amorphous oxide at least includes: at least one element selected from the group consisting of In, Zn, and Sn; and Mo. An atomic composition ratio of Mo to a number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 5 atom % or lower.
摘要翻译：无定形氧化物至少包括：选自In，Zn和Sn中的至少一种元素; 和Mo。无定形氧化物中Mo与全部金属原子数的原子组成比为0.1原子％以上且5原子％以下。

7. 发明申请

US20100264419A1 FIELD-EFFECT TRANSISTOR 有权
标题翻译：场效应晶体管
公开(公告)号：US20100264419A1
公开(公告)日：2010-10-21
申请号：US12747601
申请日：2009-01-20
申请人： Tatsuya Iwasaki , Amita Goyal , Naho Itagaki
发明人： Tatsuya Iwasaki , Amita Goyal , Naho Itagaki
IPC分类号： H01L27/06 , H01L29/786
CPC分类号： H01L29/7869
摘要： A field-effect transistor includes at least a channel layer, a gate insulating layer, a source electrode, a drain electrode, and a gate electrode, which are formed on a substrate. The channel layer is made of an amorphous oxide material that contains at least In and B, and the amorphous oxide material has an element ratio B/(In+B) of 0.05 or higher and 0.29 or lower.
摘要翻译：场效应晶体管至少包括形成在基板上的沟道层，栅极绝缘层，源电极，漏电极和栅电极。沟道层由至少含有In和B的无定形氧化物材料制成，无定形氧化物材料的元素比B /（In + B）为0.05以上且0.29以下。

8. 发明授权

US07768031B2 Light emitting device and method of producing a light emitting device 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US07768031B2
公开(公告)日：2010-08-03
申请号：US11677251
申请日：2007-02-21
申请人： Naho Itagaki , Tomoyuki Oike , Tatsuya Iwasaki , Toru Den
发明人： Naho Itagaki , Tomoyuki Oike , Tatsuya Iwasaki , Toru Den
IPC分类号： H01L33/26 , H05B33/14
CPC分类号： H05B33/14 , C09K11/642 , C09K11/883
摘要： To provide a DC drive type inorganic light emitting device excellent in luminous efficiency, provided is a light emitting device, including: a substrate; and a first layer and a second layer laminated on the substrate, in which the second layer is formed of a first portion containing Zn and at least one element chosen from S and Se as its constituent elements; and a second portion containing at least one element chosen from Cu and Ag and at least one element chosen from S and Se as its constituent elements; the first layer is made of a light emitting layer formed of at least one element chosen from S and Se and of Zn; and, in the second layer, the second portion has a cross section parallel to the substrate which tapers toward the first layer.
摘要翻译：为了提供发光效率优异的直流驱动型无机发光装置，提供了一种发光装置，包括：基板; 以及层叠在所述基板上的第一层和第二层，其中所述第二层由包含Zn的第一部分和选自S和Se的至少一种元素作为其构成元素形成; 和含有选自Cu和Ag中的至少一种元素的第二部分和选自S和Se的至少一种元素作为其组成元素; 第一层由由至少一种选自S和Se的元素和Zn形成的发光层制成; 并且在第二层中，第二部分具有平行于基板的横截面朝向第一层逐渐变细的横截面。

9. 发明申请

US20100140611A1 AMORPHOUS OXIDE AND FIELD EFFECT TRANSISTOR 有权
标题翻译：非晶氧化物和场效应晶体管
公开(公告)号：US20100140611A1
公开(公告)日：2010-06-10
申请号：US12597934
申请日：2008-05-22
申请人： Naho Itagaki , Tatsuya Iwasaki
发明人： Naho Itagaki , Tatsuya Iwasaki
IPC分类号： H01L29/22 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/247
摘要： In a field effect transistor, a channel layer of the field effect transistor is composed of an amorphous oxide including In, Zn, N and O, an atomic composition ratio of N to N and O (N/(N+O)) in the amorphous oxide is equal to or larger than 0.01 atomic percent and equal to or smaller than 3 atomic percent, and the amorphous oxide does not include Ga, or, in a case where the amorphous oxide includes Ga, the number of Ga atoms contained in the amorphous oxide is smaller than the number of N atoms.
摘要翻译：在场效应晶体管中，场效应晶体管的沟道层由包括In，Zn，N和O的无定形氧化物，N与N的原子组成比和O（N /（N + O））的原子组成比组成无定形氧化物等于或大于0.01原子％且等于或小于3原子％，并且非晶氧化物不包括Ga，或者在非晶氧化物包括Ga的情况下，包含在无定形氧化物小于N原子数。

10. 发明授权

US08164090B2 Field effect transistor and process for production thereof 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US08164090B2
公开(公告)日：2012-04-24
申请号：US12573381
申请日：2009-10-05
申请人： Tatsuya Iwasaki , Naho Itagaki
发明人： Tatsuya Iwasaki , Naho Itagaki
IPC分类号： H01L29/72
CPC分类号： H01L29/7869 , H01L29/78618
摘要： A field effect transistor has a gate electrode, gate-insulating layer, a channel and a source and drain electrodes connected electrically to the channel, the channel comprising an oxide semiconductor, the source electrode or the drain electrode comprising an oxynitride.
摘要翻译：场效应晶体管具有栅极电极，栅极绝缘层，沟道以及与沟道电连接的源极和漏极，所述沟道包括氧化物半导体，源电极或漏电极包括氧氮化物。

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