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1. 发明授权

US08304899B2 Element wafer and method for manufacturing the same 有权
标题翻译：元件晶片及其制造方法
公开(公告)号：US08304899B2
公开(公告)日：2012-11-06
申请号：US12172603
申请日：2008-07-14
申请人： Mika Okumura , Makio Horikawa , Kimitoshi Satou , Yasuo Yamaguchi
发明人： Mika Okumura , Makio Horikawa , Kimitoshi Satou , Yasuo Yamaguchi
IPC分类号： H01L23/31
CPC分类号： G01P15/0802 , B81B2201/0235 , B81C1/00182 , H01L2924/0002 , H01L2924/00
摘要： A recessed portion is provided in first and second insulating films, the first insulating film being stacked on a semiconductor wafer, the second insulating film being stacked on the first insulating film. The first and second insulating films are processed to form wiring in a formation region of the semiconductor wafer in which an acceleration sensor is to be formed. After a sacrificial film is stacked on the wiring and processed, a conductive film is stacked on the wiring and processed to form a plurality of thin film structures in the formation region. The recessed portion surrounds the formation region.
摘要翻译：在第一绝缘膜和第二绝缘膜上设置凹部，第一绝缘膜层叠在半导体晶片上，第二绝缘膜层叠在第一绝缘膜上。在形成有加速度传感器的半导体晶片的形成区域中对第一绝缘膜和第二绝缘膜进行处理以形成布线。在牺牲膜堆叠在布线上并处理之后，在布线上堆叠导电膜并加工成在形成区域中形成多个薄膜结构。凹部包围形成区域。

2. 发明授权

US07533570B2 Electrostatic-capacitance-type acceleration sensor 有权
标题翻译：静电电容式加速度传感器
公开(公告)号：US07533570B2
公开(公告)日：2009-05-19
申请号：US11278904
申请日：2006-04-06
申请人： Yasuo Yamaguchi , Makio Horikawa , Mika Okumura , Kimitoshi Satou
发明人： Yasuo Yamaguchi , Makio Horikawa , Mika Okumura , Kimitoshi Satou
IPC分类号： G01P15/125 , G01P21/00
CPC分类号： G01P15/125 , B81B3/0008 , B81B7/0077 , B81B2201/0235 , G01P1/023 , G01P2015/0828
摘要： In an electrostatic-capacitance-type acceleration sensor, water, etc. penetrating into a sealed space incorporating an acceleration detector having a movable electrode 6, and sticking of the movable electrode 6 to a cap 8 due to static charge accumulated on the cap 8 during the anodic bonding being performed are prevented. A conductive shielding film 9 that can be extendedly transformed on the entire inner face of the cap 8 constituting the sealed space is provided, which is not only extendedly arranged so as to be sandwiched between a bonding frame 7 and the cap 8, but also electrically connected to the movable electrode 6; thereby, even if unevenness exists on the surface of the bonding frame 7, not only sufficient anodic bonding between the bonding frame 7 and the cap 8 becomes possible, but also the electric field due to the static charge accumulated in the cap 8 can be shielded.
摘要翻译：在静电电容式加速度传感器中，渗入包含具有可动电极6的加速度检测器的密封空间中的水等，以及由于静电电荷积聚在盖8上而将可动电极6粘附到盖8上防止进行阳极接合。提供了可以在构成密封空间的盖8的整个内表面上扩展变形的导电屏蔽膜9，其不仅被延伸地布置成夹在接合框架7和盖8之间，而且电连接连接到可动电极6; 因此，即使在接合框架7的表面上存在不均匀性，不仅可以在接合框架7和盖8之间进行足够的阳极接合，而且可以屏蔽由于积聚在盖8中的静电荷引起的电场。

3. 发明申请

US20070062285A1 ELECTROSTATIC-CAPACITANCE-TYPE ACCELERATION SENSOR 有权
标题翻译：静电电容型加速传感器
公开(公告)号：US20070062285A1
公开(公告)日：2007-03-22
申请号：US11278904
申请日：2006-04-06
申请人： Yasuo YAMAGUCHI , Makio Horikawa , Mika Okumura , Kimitoshi Satou
发明人： Yasuo YAMAGUCHI , Makio Horikawa , Mika Okumura , Kimitoshi Satou
IPC分类号： G01P15/125
CPC分类号： G01P15/125 , B81B3/0008 , B81B7/0077 , B81B2201/0235 , G01P1/023 , G01P2015/0828
摘要： In an electrostatic-capacitance-type acceleration sensor, water, etc. penetrating into a sealed space incorporating an acceleration detector having a movable electrode 6, and sticking of the movable electrode 6 to a cap 8 due to static charge accumulated on the cap 8 during the anodic bonding being performed are prevented. A conductive shielding film 9 that can be extendedly transformed on the entire inner face of the cap 8 constituting the sealed space is provided, which is not only extendedly arranged so as to be sandwiched between a bonding frame 7 and the cap 8, but also electrically connected to the movable electrode 6; thereby, even if unevenness exists on the surface of the bonding frame 7, not only sufficient anodic bonding between the bonding frame 7 and the cap 8 becomes possible, but also the electric field due to the static charge accumulated in the cap 8 can be shielded.
摘要翻译：在静电电容式加速度传感器中，渗入包含具有可动电极6的加速度检测器的密封空间中的水等，以及由于静电电荷积聚在盖8上而将可动电极6粘附到盖8上防止进行阳极接合。提供了可以在构成密封空间的盖8的整个内表面上扩展变形的导电屏蔽膜9，其不仅被延伸地布置成夹在接合框架7和盖8之间，而且电连接连接到可动电极6; 因此，即使在接合框架7的表面上存在不均匀性，不仅可以在接合框架7和盖8之间进行足够的阳极接合，而且可以屏蔽由于积聚在盖8中的静电荷引起的电场。

4. 发明申请

US20050227477A1 Method for fabricating semiconductor device and acceleration sensor 有权
标题翻译：制造半导体器件和加速度传感器的方法
公开(公告)号：US20050227477A1
公开(公告)日：2005-10-13
申请号：US10505180
申请日：2003-01-29
申请人： Mika Okumura , Makio Horikawa , Kimitoshi Satou
发明人： Mika Okumura , Makio Horikawa , Kimitoshi Satou
IPC分类号： B81B3/00 , G01P15/08 , G01P15/125 , H01L21/28 , H01L29/84 , H01L21/4763
CPC分类号： B81C1/00095 , B81B2201/0235 , B81C2201/0109 , B81C2201/0159 , G01P15/0802 , G01P15/125 , H01L29/84
摘要： An object of the present invention is to provide a technique for reducing a step height to be covered by photoresist during formation of an electrode connected to a semiconductor substrate, e.g. a silicon substrate on which an acceleration sensor resides. In order to achieve this object, an opening (80) for formation of an electrode (90) is formed before formation of a sacrificial layer (4), semiconductor film (50), and fixed electrode (51). Therefore thick photoresist is not required.
摘要翻译：本发明的目的是提供一种降低在与半导体衬底连接的电极形成期间由光致抗蚀剂覆盖的台阶高度的技术，例如，加速度传感器所在的硅基板。为了实现该目的，在形成牺牲层（4），半导体膜（50）和固定电极（51）之前形成用于形成电极（90）的开口（80）。因此，不需要厚的光致抗蚀剂。

5. 发明授权

US07495301B2 Thin film accelerometer 有权
标题翻译：薄膜加速度计
公开(公告)号：US07495301B2
公开(公告)日：2009-02-24
申请号：US11276338
申请日：2006-02-24
申请人： Mika Okumura , Makio Horikawa , Kimitoshi Satou
发明人： Mika Okumura , Makio Horikawa , Kimitoshi Satou
IPC分类号： H01L29/84 , H01L41/113
CPC分类号： G01P15/125 , B81B3/0086 , B81B2201/0235 , G01P15/0802 , G01P2015/0814 , Y10T428/24355
摘要： A thin film structure including a conductive thin film provided on a substrate and configured to be displaced in response to an applied acceleration, a pair of electrode pads formed on the substrate such that the pair of electrode pads are disposed on respective sides of the thin film, and a nonconductive film covering a top surface of the thin film and the side of the thin film facing the electrode pads. A top surface of the conductive thin film being higher than top surfaces of the electrode pads.
摘要翻译：一种薄膜结构，包括设置在基板上并被配置为响应于施加的加速度而移位的导电薄膜，形成在所述基板上的一对电极焊盘，使得所述一对电极焊盘设置在所述薄膜的相应侧上以及覆盖薄膜的顶表面和面向电极焊盘的薄膜侧的非导电膜。导电薄膜的顶表面高于电极焊盘的顶表面。

6. 发明授权

US07094620B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US07094620B2
公开(公告)日：2006-08-22
申请号：US10505180
申请日：2003-01-29
申请人： Mika Okumura , Makio Horikawa , Kimitoshi Satou
发明人： Mika Okumura , Makio Horikawa , Kimitoshi Satou
IPC分类号： H01L21/00 , H01L29/82
CPC分类号： B81C1/00095 , B81B2201/0235 , B81C2201/0109 , B81C2201/0159 , G01P15/0802 , G01P15/125 , H01L29/84
摘要： A semiconductor device manufacturing method includes forming an insulating layer on a semiconductor substrate, forming, over the insulating layer, a first sacrificial layer having a first opening, and forming, on the sacrificial layer, a first electrode and a dummy body between the first electrode and the first opening. A photoresist is formed on the structure obtained by the previous steps, the photoresist having a second opening that opens inside the first opening. The insulating layer is etched using the photoresist as a mask to expose the semiconductor substrate, and a second electrode is formed in contact with the exposed semiconductor substrate. The sacrificial layer is removed.
摘要翻译：一种半导体器件制造方法，包括在半导体衬底上形成绝缘层，在所述绝缘层上形成具有第一开口的第一牺牲层，并且在所述牺牲层上形成第一电极和所述第一电极之间的虚设体和第一个开幕。在由前述步骤获得的结构上形成光致抗蚀剂，光致抗蚀剂具有在第一开口内部开口的第二开口。使用光致抗蚀剂作为掩模蚀刻绝缘层以暴露半导体衬底，并且形成与暴露的半导体衬底接触的第二电极。牺牲层被去除。

7. 发明申请

US20080302184A1 ACCELERATION SENSOR AND FABRICATION METHOD THEREOF 有权
标题翻译：加速度传感器及其制造方法
公开(公告)号：US20080302184A1
公开(公告)日：2008-12-11
申请号：US11946507
申请日：2007-11-28
申请人： Yasuo Yamaguchi , Makio Horikawa , Mika Okumura , Kimitoshi Sato , Takeshi Murakami
发明人： Yasuo Yamaguchi , Makio Horikawa , Mika Okumura , Kimitoshi Sato , Takeshi Murakami
IPC分类号： G01P15/125 , G01R3/00
CPC分类号： G01P15/125 , B81B3/0086 , B81B2201/0235 , B81B2207/07 , G01P1/023 , G01P15/0802 , G01P2015/0814 , Y10T29/49002
摘要： First and second semiconductor layers are attached to each other with an insulation layer sandwiched therebetween. An acceleration sensor device is formed in the first semiconductor layer. A control device for controlling the acceleration sensor device is formed on the second semiconductor layer. Through holes are formed in the second semiconductor layer, and an insulation layer is formed to cover the wall surfaces of the through holes. Through interconnections are formed within the through holes for electrically connecting the acceleration sensor device and the control device to each other. Accordingly, it is possible to obtain an acceleration sensor having excellent detection accuracy while having a reduced size, and a fabrication method thereof.
摘要翻译：第一和第二半导体层通过夹在其间的绝缘层彼此附接。在第一半导体层中形成加速度传感器装置。用于控制加速度传感器装置的控制装置形成在第二半导体层上。在第二半导体层中形成通孔，并且形成绝缘层以覆盖通孔的壁表面。通孔之间形成有用于将加速度传感器装置和控制装置彼此电连接的通孔。因此，能够获得尺寸小的检测精度优异的加速度传感器及其制造方法。

8. 发明授权

US08193631B2 Semiconductor device and method of manufacturing the semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08193631B2
公开(公告)日：2012-06-05
申请号：US12164464
申请日：2008-06-30
申请人： Kimitoshi Sato , Mika Okumura , Yasuo Yamaguchi , Makio Horikawa
发明人： Kimitoshi Sato , Mika Okumura , Yasuo Yamaguchi , Makio Horikawa
IPC分类号： H01L23/48
CPC分类号： G01P15/125 , B81B7/007 , B81B2207/097 , G01P1/023 , G01P15/0802 , G01P2015/0814
摘要： A first interconnection is formed along a groove of a substrate and on a bottom surface of the groove, and has a first thickness. A second interconnection is electrically connected to the first interconnection and has a second thickness larger than the first thickness. An acceleration sensing unit is electrically connected to the second interconnection. A sealing unit has a portion opposed to the substrate with the first interconnection therebetween, and surrounds the second interconnection and the acceleration sensing unit on the substrate. A cap is arranged on the sealing unit to form a cavity on a region of the substrate surrounded by the sealing unit. Thereby, airtightness of the cavity can be ensured and also an electric resistance of the interconnection connected to the acceleration sensing unit can be reduced.
摘要翻译：第一互连沿着基板的凹槽和凹槽的底表面形成，并且具有第一厚度。第二互连电连接到第一互连并且具有大于第一厚度的第二厚度。加速度感测单元电连接到第二互连。密封单元具有与基板相对的部分，其间具有第一互连，并且包围基板上的第二互连和加速度感测单元。在密封单元上设置盖，以在由密封单元包围的基板的区域上形成空腔。由此，能够确保空腔的气密性，并且能够减少与加速度检测部连接的配线的电阻。

9. 发明授权

US07900515B2 Acceleration sensor and fabrication method thereof 有权
标题翻译：加速度传感器及其制造方法
公开(公告)号：US07900515B2
公开(公告)日：2011-03-08
申请号：US11946507
申请日：2007-11-28
申请人： Yasuo Yamaguchi , Makio Horikawa , Mika Okumura , Kimitoshi Sato , Takeshi Murakami
发明人： Yasuo Yamaguchi , Makio Horikawa , Mika Okumura , Kimitoshi Sato , Takeshi Murakami
IPC分类号： G01P15/125
CPC分类号： G01P15/125 , B81B3/0086 , B81B2201/0235 , B81B2207/07 , G01P1/023 , G01P15/0802 , G01P2015/0814 , Y10T29/49002
摘要： First and second semiconductor layers are attached to each other with an insulation layer sandwiched therebetween. An acceleration sensor device is formed in the first semiconductor layer. A control device for controlling the acceleration sensor device is formed on the second semiconductor layer. Through holes are formed in the second semiconductor layer, and an insulation layer is formed to cover the wall surfaces of the through holes. Through interconnections are formed within the through holes for electrically connecting the acceleration sensor device and the control device to each other. Accordingly, it is possible to obtain an acceleration sensor having excellent detection accuracy while having a reduced size, and a fabrication method thereof.
摘要翻译：第一和第二半导体层通过夹在其间的绝缘层彼此附接。在第一半导体层中形成加速度传感器装置。用于控制加速度传感器装置的控制装置形成在第二半导体层上。在第二半导体层中形成通孔，并且形成绝缘层以覆盖通孔的壁表面。通孔之间形成有用于将加速度传感器装置和控制装置彼此电连接的通孔。因此，能够获得尺寸小的检测精度优异的加速度传感器及其制造方法。

10. 发明授权

US07371600B2 Thin-film structure and method for manufacturing the same, and acceleration sensor and method for manufacturing the same 有权
标题翻译：薄膜结构及其制造方法，加速度传感器及其制造方法
公开(公告)号：US07371600B2
公开(公告)日：2008-05-13
申请号：US10344006
申请日：2001-06-13
申请人： Kiyoshi Ishibashi , Makio Horikawa , Mika Okumura , Masaaki Aoto , Daisaku Yoshida , Hirofumi Takakura
发明人： Kiyoshi Ishibashi , Makio Horikawa , Mika Okumura , Masaaki Aoto , Daisaku Yoshida , Hirofumi Takakura
IPC分类号： H01L21/00 , H01L29/82
CPC分类号： B81C1/00666 , B81B2201/0235 , B81C2201/0164 , B81C2201/0169 , G01P15/125 , G01P2015/0814 , H01G4/33 , H01G5/16
摘要： A thin-film structural body formed by using a semiconductor processing technique and a manufacturing method thereof, and particularly a thin-film structural body constituting a semiconductor acceleration sensor and a manufacturing method thereof. The thin-film structural body allows the thin-film member to be easily stress-controlled, and easily makes the film-thickness of the thin-film member thicker. The thin-film member forms a mass body and, beams and fixed electrodes of the semiconductor acceleration sensor are constituted by a plurality of doped polysilicon thin-films that are laminated by performing a step of film deposition of polysilicon while, for example, phosphorous is being doped as impurities plural times.
摘要翻译：通过使用半导体加工技术形成的薄膜结构体及其制造方法，特别是构成半导体加速度传感器的薄膜结构体及其制造方法。薄膜结构体允许薄膜构件易于受到应力控制，并且容易使薄膜构件的膜厚变厚。薄膜构件形成质量体，并且半导体加速度传感器的束和固定电极由多个掺杂的多晶硅薄膜构成，所述多个多晶硅薄膜通过执行多晶硅的薄膜沉积步骤而被层压，而例如磷是作为杂质多次掺杂。

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