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1. 发明授权

US09070662B2 Chip-scale packaging with protective heat spreader 有权
标题翻译：带防护散热器的芯片级封装
公开(公告)号：US09070662B2
公开(公告)日：2015-06-30
申请号：US12716197
申请日：2010-03-02
申请人： Mihalis Michael , Ilija Jergovic
发明人： Mihalis Michael , Ilija Jergovic
IPC分类号： H01L23/367 , H01L23/42 , H01L23/31 , H01L23/00
CPC分类号： H01L23/3675 , H01L21/56 , H01L23/3107 , H01L23/3114 , H01L23/367 , H01L23/3672 , H01L23/42 , H01L24/13 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/75 , H01L24/83 , H01L24/92 , H01L24/97 , H01L2224/13082 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/2731 , H01L2224/32245 , H01L2224/73253 , H01L2224/75745 , H01L2224/81191 , H01L2224/83191 , H01L2224/83192 , H01L2224/83193 , H01L2224/838 , H01L2224/83855 , H01L2224/83862 , H01L2224/83874 , H01L2224/92242 , H01L2224/97 , H01L2224/98 , H01L2924/00011 , H01L2924/00014 , H01L2924/14 , H01L2924/1426 , H01L2924/181 , H01L2224/81 , H01L2224/83 , H01L2924/014 , H01L2924/00 , H01L2224/0401
摘要： A semiconductor package can include a semiconductor die having an integrated circuit, a first die surface, and an opposite second die surface. A packaging can be attached to the die and have a holder surface opposite the first die surface. A heat spreader can be configured to cover the second die surface and the packaging surface and can be attached thereto by a layer of adhesive positioned between the heat spreader and the semiconductor die. A semiconductor package array can include an array of semiconductor dies and a heat spreader configured to cover each semiconductor die. A conductive lead can be electrically connected to the integrated circuit in a semiconductor die and can extend from the first die surface. Manufacturing a semiconductor package can include applying thermally conductive adhesive to the heat spreader and placing the heat spreader proximate the semiconductor die.
摘要翻译：半导体封装可以包括具有集成电路的半导体管芯，第一管芯表面和相对的第二管芯表面。包装可以附接到模具并且具有与第一模具表面相对的保持器表面。散热器可以被配置为覆盖第二模具表面和包装表面，并且可以通过位于散热器和半导体管芯之间的粘合剂层附接到散热器。半导体封装阵列可以包括半导体管芯阵列和配置成覆盖每个半导体管芯的散热器。导电引线可以与半导体管芯中的集成电路电连接并且可以从第一管芯表面延伸。制造半导体封装可以包括将热传导粘合剂施加到散热器并将散热器放置在半导体管芯附近。

2. 发明申请

US20100224985A1 Chip-Scale Packaging with Protective Heat Spreader 有权
标题翻译：带防护散热器的芯片级封装
公开(公告)号：US20100224985A1
公开(公告)日：2010-09-09
申请号：US12716197
申请日：2010-03-02
申请人： Mihalis Michael , Ilija Jergovic
发明人： Mihalis Michael , Ilija Jergovic
IPC分类号： H01L23/367 , H01L23/52 , H01L23/50 , H01L21/50 , H01L23/538
CPC分类号： H01L23/3675 , H01L21/56 , H01L23/3107 , H01L23/3114 , H01L23/367 , H01L23/3672 , H01L23/42 , H01L24/13 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/75 , H01L24/83 , H01L24/92 , H01L24/97 , H01L2224/13082 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/2731 , H01L2224/32245 , H01L2224/73253 , H01L2224/75745 , H01L2224/81191 , H01L2224/83191 , H01L2224/83192 , H01L2224/83193 , H01L2224/838 , H01L2224/83855 , H01L2224/83862 , H01L2224/83874 , H01L2224/92242 , H01L2224/97 , H01L2224/98 , H01L2924/00011 , H01L2924/00014 , H01L2924/14 , H01L2924/1426 , H01L2924/181 , H01L2224/81 , H01L2224/83 , H01L2924/014 , H01L2924/00 , H01L2224/0401
摘要： A semiconductor package can include a semiconductor die having an integrated circuit, a first die surface, and an opposite second die surface. A packaging can be attached to the die and have a holder surface opposite the first die surface. A heat spreader can be configured to cover the second die surface and the packaging surface and can be attached thereto by a layer of adhesive positioned between the heat spreader and the semiconductor die. A semiconductor package array can include an array of semiconductor dies and a heat spreader configured to cover each semiconductor die. A conductive lead can be electrically connected to the integrated circuit in a semiconductor die and can extend from the first die surface. Manufacturing a semiconductor package can include applying thermally conductive adhesive to the heat spreader and placing the heat spreader proximate the semiconductor die.
摘要翻译：半导体封装可以包括具有集成电路的半导体管芯，第一管芯表面和相对的第二管芯表面。包装可以附接到模具并且具有与第一模具表面相对的保持器表面。散热器可以被配置为覆盖第二模具表面和包装表面，并且可以通过位于散热器和半导体管芯之间的粘合剂层附接到散热器。半导体封装阵列可以包括半导体管芯阵列和配置成覆盖每个半导体管芯的散热器。导电引线可以与半导体管芯中的集成电路电连接并且可以从第一管芯表面延伸。制造半导体封装可以包括将热传导粘合剂施加到散热器并将散热器放置在半导体管芯附近。

3. 发明授权

US08907642B1 Systems and methods for DC-to-DC converter control 有权
公开(公告)号：US08907642B1
公开(公告)日：2014-12-09
申请号：US13167684
申请日：2011-06-23
申请人： Andrew Burstein , Sombuddha Chakraborty , Yali Xiong , Michael D. McJimsey , Trey A. Roessig , Luigi Panseri , Paul H. Choi , Theodore V. Burmas , Biljana Beronja , Giovanni Garcea , Ilija Jergovic , Andrea Pizzutelli , Anthony J. Stratakos
发明人： Andrew Burstein , Sombuddha Chakraborty , Yali Xiong , Michael D. McJimsey , Trey A. Roessig , Luigi Panseri , Paul H. Choi , Theodore V. Burmas , Biljana Beronja , Giovanni Garcea , Ilija Jergovic , Andrea Pizzutelli , Anthony J. Stratakos
IPC分类号： H02M3/158
CPC分类号： H02M3/158 , H02M1/084 , H02M3/157 , H02M3/1584 , H02M2001/0003 , H03H7/20
摘要： A regulated, power supply system is described using multiphase DC-DC converters with dynamic fast-turnon, slow-turnoff phase shedding, early phase turn-on, and both load-voltage and drive-transistor feedback to pulsewidth modulators to provide fast response to load transients. In an embodiment, a system master can automatically determine whether all, or only some, slave phase units are fully populated. The programmable system includes fault detection with current and voltage sensing, telemetry capability, and automatic shutdown capability. In an embodiment, these are buck-type converters with or without coupled inductors, however some of the embodiments illustrated include boost configurations.

4. 发明授权

US08942009B2 Lead assembly for a flip-chip power switch 有权
标题翻译：用于倒装芯片电源开关的引线组件
公开(公告)号：US08942009B2
公开(公告)日：2015-01-27
申请号：US13336821
申请日：2011-12-23
申请人： Efren M. Lacap , Ilija Jergovic
发明人： Efren M. Lacap , Ilija Jergovic
IPC分类号： H05K5/02 , H05K7/18 , H01L23/50 , H01L23/498 , H02M3/158
CPC分类号： H01L23/50 , H01L23/49811 , H01L2224/13111 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13147 , H01L2224/16245 , H01L2924/00013 , H01L2924/10253 , H02M3/1588 , Y02B70/1466 , H01L2924/00014 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
摘要： A power switch assembly includes a flip-chip type integrated circuit chip and a lead-frame with a plurality of spaced apart parallel lead sections. The flip-chip type integrated circuit chip includes a distributed transistor, and first and second pluralities of flip-chip interconnects connected to source and drain regions, respectively. The first and second lead sections at least partially overlap along the first axis. Each of the plurality of lead sections includes a contact portion and an extended portion extending laterally from the contact portion. The extended portions of the first and second lead section extend from the contact portion in opposite directions. The first side of the first and second lead section contacts at least two of the first and plurality of flip-chip interconnects, respectively. The second side of the first and second lead are configured to contact a first and second contact area on a printed circuit board, respectively.
摘要翻译：电源开关组件包括倒装芯片型集成电路芯片和具有多个间隔开的平行引线部分的引线框架。倒装芯片型集成电路芯片包括分布式晶体管，以及分别连接到源极和漏极区域的第一和第二多个倒装芯片互连。第一和第二引线部分沿着第一轴线至少部分重叠。多个引线部分中的每一个包括接触部分和从接触部分横向延伸的延伸部分。第一和第二引线部分的延伸部分从接触部分沿相反方向延伸。第一和第二引线部分的第一侧分别接触第一和多个倒装芯片互连中的至少两个。第一和第二引线的第二侧分别被配置为接触印刷电路板上的第一和第二接触区域。

5. 发明授权

US08872384B2 Switching circuits for extracting power from an electric power source and associated methods 有权
标题翻译：用于从电源提取电力的开关电路及相关方法
公开(公告)号：US08872384B2
公开(公告)日：2014-10-28
申请号：US13212013
申请日：2011-08-17
申请人： Anthony J. Stratakos , Michael D. McJimsey , Ilija Jergovic , Alexandr Ikriannikov , Artin Der Minassians , Kaiwei Yao , David B. Lidsky , Marco A. Zuniga , Ana Borisavljevic
发明人： Anthony J. Stratakos , Michael D. McJimsey , Ilija Jergovic , Alexandr Ikriannikov , Artin Der Minassians , Kaiwei Yao , David B. Lidsky , Marco A. Zuniga , Ana Borisavljevic
IPC分类号： H01F27/42
CPC分类号： H02J1/102 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H02J3/383 , H02J2001/106 , H02M3/158 , H03K17/102 , H03K17/122 , H03K17/145 , H03K17/693 , H03K2217/0036 , H03K2217/0054 , Y02E10/563 , Y10T307/685 , Y10T307/696 , Y10T307/707 , H01L2924/00014
摘要： An electric power system includes N electric power sources and N switching circuits, where N in an integer greater than one. Each switching circuit includes an input port electrically coupled to a respective one of the N electric power sources, an output port, and a first switching device adapted to switch between its conductive and non-conductive states to transfer power from the input port to the output port. The output ports of the N switching circuits are electrically coupled in series and to a load to establish an output circuit. Each of the N switching circuits uses an interconnection inductance of the output circuit as a primary energy storage inductance of the switching circuit.
摘要翻译：电力系统包括N个电源和N个开关电路，其中N以大于1的整数。每个开关电路包括电耦合到N个电源中的相应一个的输入端口，输出端口和适于在其导电状态和非导通状态之间切换以将功率从输入端口传输到输出的第一开关装置港口。 N个开关电路的输出端口串联电耦合到负载以建立输出电路。 N个开关电路中的每一个使用输出电路的互连电感作为开关电路的一次能量存储电感。

6. 发明申请

US20120043823A1 Switching Circuits For Extracting Power From An Electric Power Source And Associated Methods 有权
标题翻译：用于从电源提取功率的开关电路及相关方法
公开(公告)号：US20120043823A1
公开(公告)日：2012-02-23
申请号：US13211985
申请日：2011-08-17
申请人： Anthony J. Stratakos , Michael D. McJimsey , Ilija Jergovic , Alexandr Ikriannikov , Artin Der Minassians , Kaiwei Yao , David B. Lidsky , Marco A. Zuniga , Ana Borisavljevic
发明人： Anthony J. Stratakos , Michael D. McJimsey , Ilija Jergovic , Alexandr Ikriannikov , Artin Der Minassians , Kaiwei Yao , David B. Lidsky , Marco A. Zuniga , Ana Borisavljevic
IPC分类号： H02J4/00 , G05F1/10
CPC分类号： H02J1/102 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H02J3/383 , H02J2001/106 , H02M3/158 , H03K17/102 , H03K17/122 , H03K17/145 , H03K17/693 , H03K2217/0036 , H03K2217/0054 , Y02E10/563 , Y10T307/685 , Y10T307/696 , Y10T307/707 , H01L2924/00014
摘要： A switching circuit for extracting power from an electric power source includes (1) an input port for electrically coupling to the electric power source, (2) an output port for electrically coupling to a load, (3) a first switching device configured to switch between its conductive state and its non-conductive state to transfer power from the input port to the output port, (4) an intermediate switching node that transitions between at least two different voltage levels at least in part due to the first switching device switching between its conductive state and its non-conductive state, and (5) a controller for controlling the first switching device to maximize an average value of a voltage at the intermediate switching node.
摘要翻译：用于从电源提取电力的切换电路包括：（1）用于电耦合到电源的输入端口，（2）用于电耦合到负载的输出端口;（3）第一开关装置，被配置为开关在其导电状态和其非导通状态之间，以将功率从输入端口传输到输出端口;（4）中间开关节点，其至少部分地由于第一开关器件在第其导通状态和非导通状态，以及（5）用于控制第一开关器件以使中间开关节点处的电压的平均值最大化的控制器。

7. 发明授权

US09106201B1 Systems and methods for DC-to-DC converter control 有权
标题翻译：用于DC-DC转换器控制的系统和方法
公开(公告)号：US09106201B1
公开(公告)日：2015-08-11
申请号：US13167665
申请日：2011-06-23
申请人： Sombuddha Chakraborty , Yali Xiong , Michael D. McJimsey , Anthony J. Stratakos , Giovanni Garcea , Ilija Jergovic , Andrew Burstein , Andrea Pizzutelli
发明人： Sombuddha Chakraborty , Yali Xiong , Michael D. McJimsey , Anthony J. Stratakos , Giovanni Garcea , Ilija Jergovic , Andrew Burstein , Andrea Pizzutelli
IPC分类号： G05F1/00 , H02J3/08 , H03H7/20 , H02M3/158
CPC分类号： H02M3/158 , H02M1/084 , H02M3/157 , H02M3/1584 , H02M2001/0003 , H03H7/20
摘要： A regulated, power supply system is described using multiphase DC-DC converters with dynamic fast-turnon, slow-turnoff phase shedding, early phase turn-on, and both load-voltage and drive-transistor feedback to pulsewidth modulators to provide fast response to load transients. In an embodiment, a system master can automatically determine whether all, or only some, slave phase units are fully populated. The programmable system includes fault detection with current and voltage sensing, telemetry capability, and automatic shutdown capability. In an embodiment, these are buck-type converters with or without coupled inductors, however some of the embodiments illustrated include boost configurations.
摘要翻译：使用具有动态快速旋转，慢关闭相位脱落，早期相位接通以及负载电压和驱动晶体管反馈到脉宽调制器的多相DC-DC转换器来描述稳压电源系统，以提供快速响应负载瞬变。在一个实施例中，系统主机可以自动地确定是否完全填充了所有或只有一些从动相位单元。可编程系统包括电流和电压检测，遥测能力和自动关机功能的故障检测。在一个实施例中，这些是具有或不具有耦合电感器的降压型转换器，然而所示实施例的一些包括升压配置。

8. 发明申请

US20130037963A1 CONDUCTIVE ROUTINGS IN INTEGRATED CIRCUITS USING UNDER BUMP METALLIZATION 有权
标题翻译：使用BUMP METALLIZATION的集成电路中的导电路由
公开(公告)号：US20130037963A1
公开(公告)日：2013-02-14
申请号：US13454968
申请日：2012-04-24
申请人： Ilija Jergovic , Efren M. Lacap
发明人： Ilija Jergovic , Efren M. Lacap
IPC分类号： H01L23/48
CPC分类号： H01L23/5226 , H01L23/4824 , H01L23/522 , H01L23/53238 , H01L24/05 , H01L24/13 , H01L2224/0401 , H01L2224/05624 , H01L2224/05647 , H01L2224/131 , H01L2924/00014 , H01L2924/14 , H01L2924/01014 , H01L2924/00
摘要： An integrated circuit structure includes a first conductive layer and an under bump metallization layer over the first conductive layer. The first conductive layer has a first conductive region and a second conductive region electrically isolated from the first conductive region. The under bump metallization layer has a first conductive area and a second conductive area electrically isolated from the first conductive area, the first conductive area substantially located over the first conductive region and the second conductive area substantially located over the second conductive region. At least one of the first conductive area or the first conductive region includes a first protrusion extending toward the second conductive area or second conductive region, respectively. Conductive vias connect the first conductive region to the second conductive area and connect the second conductive region to the first conductive area, and the vias include at least one via connected to the first protrusion.
摘要翻译：集成电路结构包括在第一导电层上的第一导电层和凸块下金属化层。第一导电层具有与第一导电区电绝缘的第一导电区域和第二导电区域。凸块下金属化层具有第一导电区域和与第一导电区域电隔离的第二导电区域，第一导电区域基本上位于第一导电区域上方，第二导电区域基本上位于第二导电区域上方。第一导电区域或第一导电区域中的至少一个分别包括朝向第二导电区域或第二导电区域延伸的第一突起。导电通孔将第一导电区域连接到第二导电区域并且将第二导电区域连接到第一导电区域，并且通孔包括连接到第一突起的至少一个通孔。

9. 发明申请

US20120044014A1 Switching Circuits For Extracting Power From An Electric Power Source And Associated Methods 有权
标题翻译：用于从电源提取功率的开关电路及相关方法
公开(公告)号：US20120044014A1
公开(公告)日：2012-02-23
申请号：US13211997
申请日：2011-08-17
申请人： Anthony J. Stratakos , Michael D. McJimsey , Ilija Jergovic , Alexandr Ikriannikov , Artin Der Minassians , Kaiwei Yao , David B. Lidsky , Marco A. Zuniga , Ana Borisavljevic
发明人： Anthony J. Stratakos , Michael D. McJimsey , Ilija Jergovic , Alexandr Ikriannikov , Artin Der Minassians , Kaiwei Yao , David B. Lidsky , Marco A. Zuniga , Ana Borisavljevic
IPC分类号： G11C5/14 , G05F1/10
CPC分类号： H02J1/102 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H02J3/383 , H02J2001/106 , H02M3/158 , H03K17/102 , H03K17/122 , H03K17/145 , H03K17/693 , H03K2217/0036 , H03K2217/0054 , Y02E10/563 , Y10T307/685 , Y10T307/696 , Y10T307/707 , H01L2924/00014
摘要： An integrated circuit chip includes a first input port, a first output port, and first and second transistors electrically coupled in series across the first input port. The second transistor is also electrically coupled across the first output port and is adapted to provide a path for current flowing through the first output port when the first transistor is in its non-conductive state. The integrated circuit chip additionally includes first driver circuitry for driving gates of the first and second transistors to cause the transistors to switch between their conductive and non-conductive states. The integrated circuit chip further includes first controller circuitry for controlling the first driver circuitry such that the first and second transistors switch between their conductive and non-conductive states to at least substantially maximize an amount of electric power extracted from an electric power source electrically coupled to the first input port.
摘要翻译：集成电路芯片包括第一输入端口，第一输出端口以及跨越第一输入端口串联电耦合的第一和第二晶体管。第二晶体管也电耦合跨越第一输出端口，并且适于在第一晶体管处于非导通状态时提供流过第一输出端口的电流的路径。集成电路芯片还包括用于驱动第一和第二晶体管的栅极的第一驱动器电路，以使晶体管在其导通状态和非导通状态之间切换。集成电路芯片还包括用于控制第一驱动器电路的第一控制器电路，使得第一和第二晶体管在其导电状态和非导通状态之间切换至少基本上最大化从电耦合到第一个输入端口。

10. 发明授权

US07989953B1 Flip chip power switch with under bump metallization stack 有权
标题翻译：倒装芯片功率开关，带有凸块下金属化堆叠
公开(公告)号：US07989953B1
公开(公告)日：2011-08-02
申请号：US12343372
申请日：2008-12-23
申请人： Ilija Jergovic , Efren M. Lacap
发明人： Ilija Jergovic , Efren M. Lacap
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/492 , H01L23/4824 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L2224/0345 , H01L2224/0346 , H01L2224/03462 , H01L2224/0401 , H01L2224/05012 , H01L2224/05027 , H01L2224/05083 , H01L2224/05096 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05541 , H01L2224/05552 , H01L2224/05647 , H01L2224/11444 , H01L2224/1147 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/81191 , H01L2224/81815 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor package includes a semiconductor substrate a semiconductor substrate having source and drain regions formed therein, an intermediate routing structure to provide electrical interconnects to the source and drain regions, a dielectric layer formed over the intermediate routing structure, and an under-bump-metallization (UBM) stack. The intermediate routing structure includes an outermost conductive layer, and the dielectric layer has an opening positioned over a portion of the intermediate layer routing structure. The UBM stack includes a conductive base layer formed over the dielectric layer and electrically connected to the outermost conductive layer through the opening, and a thick conductive layer formed on the base layer. A conductive bump is positioned on the UBM stack and laterally spaced from the opening.
摘要翻译：半导体封装包括半导体衬底，其中形成有源极和漏极区域的半导体衬底，用于向源极和漏极区域提供电互连的中间布线结构，在中间布线结构上形成的介电层，以及凹凸下金属化（UBM）堆栈。中间布线结构包括最外面的导电层，并且介电层具有位于中间层布线结构的一部分上的开口。 UBM堆叠包括形成在电介质层上并且通过开口电连接到最外面的导电层的导电基底层，以及形成在基底层上的厚的导电层。导电凸块定位在UBM堆叠上并且与开口横向间隔开。

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