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1. 发明授权

US11532477B2 Self-assembled nanostructures including metal oxides and semiconductor structures comprised thereof 有权
公开(公告)号：US11532477B2
公开(公告)日：2022-12-20
申请号：US16049329
申请日：2018-07-30
申请人： Micron Technology, Inc.
发明人： Nicholas Hendricks , Adam L. Olson , William R. Brown , Ho Seop Eom , Xue Chen , Kaveri Jain , Scott Schuldenfrei
IPC分类号： H01L21/027 , C08G81/00 , H01L21/033 , H01L21/3105 , B81C1/00 , C08L53/00 , H01L21/02
摘要： A self-assembled nanostructure comprises first domains and second domains. The first domains comprise a first block of a block copolymer material and an activatable catalyst. The second domains comprise a second block and substantially without the activatable catalyst. The activatable catalyst is capable of generating catalyst upon application of activation energy, and the generated catalyst is capable of reacting with a metal oxide precursor to provide a metal oxide. A semiconductor structure comprises such self-assembled nanostructure on a substrate.

2. 发明申请

US20180337035A1 SELF-ASSEMBLED NANOSTRUCTURES INCLUDING METAL OXIDES, SEMICONDUCTOR STRUCTURES COMPRISED THEREOF, AND METHODS OF FORMING SAME 审中-公开
公开(公告)号：US20180337035A1
公开(公告)日：2018-11-22
申请号：US16049329
申请日：2018-07-30
申请人： Micron Technology, Inc.
发明人： Nicholas Hendricks , Adam L. Olson , William R. Brown , Ho Seop Eom , Xue Chen , Kaveri Jain , Scott Schuldenfrei
IPC分类号： H01L21/027 , H01L21/3105 , H01L21/033 , H01L21/02 , B81C1/00 , C08L53/00 , C08G81/00
CPC分类号： H01L21/0273 , B81C1/00031 , B81C2201/0149 , C08G81/00 , C08L53/005 , H01L21/02118 , H01L21/02175 , H01L21/02318 , H01L21/0332 , H01L21/0337 , H01L21/31058
摘要： A self-assembled nanostructure comprises first domains and second domains. The first domains comprise a first block of a block copolymer material and an activatable catalyst. The second domains comprise a second block and substantially without the activatable catalyst. The activatable catalyst is capable of generating catalyst upon application of activation energy, and the generated catalyst is capable of reacting with a metal oxide precursor to provide a metal oxide. A semiconductor structure comprises such self-assembled nanostructure on a substrate.

3. 发明授权

US10049874B2 Self-assembled nanostructures including metal oxides and semiconductor structures comprised thereof 有权
公开(公告)号：US10049874B2
公开(公告)日：2018-08-14
申请号：US14920018
申请日：2015-10-22
申请人： Micron Technology, Inc.
发明人： Nicholas Hendricks , Adam L. Olson , William R. Brown , Ho Seop Eom , Xue Chen , Kaveri Jain , Scott Schuldenfrei
IPC分类号： H01L29/06 , H01L21/027 , C08G81/00 , H01L21/033 , H01L21/3105 , B81C1/00 , C08L53/00 , H01L21/02
摘要： A self-assembled nanostructure comprises first domains and second domains. The first domains comprise a first block of a block copolymer material and an activatable catalyst. The second domains comprise a second block and substantially without the activatable catalyst. The activatable catalyst is capable of generating catalyst upon application of activation energy, and the generated catalyst is capable of reacting with a metal oxide precursor to provide a metal oxide. A semiconductor structure comprises such self-assembled nanostructure on a substrate.

4. 发明授权

US09177795B2 Methods of forming nanostructures including metal oxides 有权
标题翻译：形成纳米结构的方法，包括金属氧化物
公开(公告)号：US09177795B2
公开(公告)日：2015-11-03
申请号：US14040245
申请日：2013-09-27
申请人： Micron Technology, Inc.
发明人： Nicholas Hendricks , Adam L. Olson , William R. Brown , Ho Seop Eom , Xue Chen , Kaveri Jain , Scott Schuldenfrei
IPC分类号： H01L21/302 , H01L21/027 , C08G81/00
CPC分类号： H01L21/0273 , B81C1/00031 , B81C2201/0149 , C08G81/00 , C08L53/005 , H01L21/02118 , H01L21/02175 , H01L21/02318 , H01L21/0332 , H01L21/0337 , H01L21/31058
摘要： A method of forming nanostructures may include forming a block copolymer composition within a trench in a material on a substrate, wherein the block copolymer composition may comprise a block copolymer material and an activatable catalyst having a higher affinity for a first block of the block copolymer material compared to a second block of the block copolymer material; self-assembling the block copolymer composition into first domains comprising the first block and the activatable catalyst, and second domains comprising the second block; generating catalyst from the activatable catalyst in at least one portion of the first domains to produce a structure comprising catalyst-containing domains and the second domains, the catalyst-containing domains comprising the first block and the catalyst; and reacting a metal oxide precursor with the catalyst in the catalyst-containing domains to produce a metal oxide-containing structure comprising the first block and metal oxide.
摘要翻译：形成纳米结构的方法可以包括在衬底中的材料中的沟槽内形成嵌段共聚物组合物，其中嵌段共聚物组合物可以包含嵌段共聚物材料和对于嵌段共聚物材料的第一嵌段具有更高亲和力的可活化催化剂与第二嵌段共聚物材料相比; 将嵌段共聚物组合物自组装成包含第一嵌段和可活化催化剂的第一畴，以及包含第二嵌段的第二畴; 在第一区域的至少一部分中从可活化催化剂产生催化剂以产生包含含催化剂的区域和第二区域的结构，所述含催化剂的区域包含第一嵌段和催化剂; 并使金属氧化物前体与含催化剂的区域中的催化剂反应，以制备包含第一嵌段和金属氧化物的含金属氧化物的结构。

5. 发明申请

US20150091137A1 METHODS OF FORMING NANOSTRUCTURES INCLUDING METAL OXIDES AND SEMICONDUCTOR STRUCTURES INCLUDING SAME 有权
标题翻译：形成金属氧化物的纳米结构的方法和包括其中的半导体结构
公开(公告)号：US20150091137A1
公开(公告)日：2015-04-02
申请号：US14040245
申请日：2013-09-27
申请人： Micron Technology, Inc.
发明人： Nicholas Hendricks , Adam L. Olson , William R. Brown , Ho Seop Eom , Xue Chen , Kaveri Jain , Scott Schuldenfrei
IPC分类号： H01L21/027 , C08G81/00
CPC分类号： H01L21/0273 , B81C1/00031 , B81C2201/0149 , C08G81/00 , C08L53/005 , H01L21/02118 , H01L21/02175 , H01L21/02318 , H01L21/0332 , H01L21/0337 , H01L21/31058
摘要： A method of forming nanostructures may include forming a block copolymer composition within a trench in a material on a substrate, wherein the block copolymer composition may comprise a block copolymer material and an activatable catalyst having a higher affinity for a first block of the block copolymer material compared to a second block of the block copolymer material; self-assembling the block copolymer composition into first domains comprising the first block and the activatable catalyst, and second domains comprising the second block; generating catalyst from the activatable catalyst in at least one portion of the first domains to produce a structure comprising catalyst-containing domains and the second domains, the catalyst-containing domains comprising the first block and the catalyst; and reacting a metal oxide precursor with the catalyst in the catalyst-containing domains to produce a metal oxide-containing structure comprising the first block and metal oxide.
摘要翻译：形成纳米结构的方法可以包括在衬底中的材料中的沟槽内形成嵌段共聚物组合物，其中嵌段共聚物组合物可以包含嵌段共聚物材料和对于嵌段共聚物材料的第一嵌段具有更高亲和力的可活化催化剂与第二嵌段共聚物材料相比; 将嵌段共聚物组合物自组装成包含第一嵌段和可活化催化剂的第一畴，以及包含第二嵌段的第二畴; 在第一区域的至少一部分中从可活化催化剂产生催化剂以产生包含含催化剂的区域和第二区域的结构，所述含催化剂的区域包含第一嵌段和催化剂; 并使金属氧化物前体与含催化剂的区域中的催化剂反应，以制备包含第一嵌段和金属氧化物的含金属氧化物的结构。

6. 发明申请

US20230116129A1 METHODS OF FORMING NANOSTRUCTURES INCLUDING METAL OXIDES USING BLOCK COPOLYMER MATERIALS 有权
公开(公告)号：US20230116129A1
公开(公告)日：2023-04-13
申请号：US18062495
申请日：2022-12-06
申请人： Micron Technology, Inc.
发明人： Nicholas Hendricks , Adam L. Olson , William R. Brown , Ho Seop Eom , Xue Chen , Kaveri Jain , Scott Schuldenfrei
IPC分类号： H01L21/027 , C08G81/00 , H01L21/033 , H01L21/3105 , B81C1/00 , C08L53/00 , H01L21/02
摘要： A self-assembled nanostructure comprises first domains and second domains. The first domains comprise a first block of a block copolymer material and an activatable catalyst. The second domains comprise a second block and substantially without the activatable catalyst. The activatable catalyst is capable of generating catalyst upon application of activation energy, and the generated catalyst is capable of reacting with a metal oxide precursor to provide a metal oxide. A semiconductor structure comprises such self-assembled nanostructure on a substrate.

7. 发明申请

US20160042941A1 SELF-ASSEMBLED NANOSTRUCTURES INCLUDING METAL OXIDES, SEMICONDUCTOR STRUCTURES COMPRISING THEREOF, AND METHODS OF FORMING SAME 审中-公开
标题翻译：包含金属氧化物的自组装纳米结构，其包含的半导体结构及其形成方法
公开(公告)号：US20160042941A1
公开(公告)日：2016-02-11
申请号：US14920018
申请日：2015-10-22
申请人： Micron Technology, Inc.
发明人： Nicholas Hendricks , Adam L. Olson , William R. Brown , Ho Seop Eom , Xue Chen , Kaveri Jain , Scott Schuldenfrei
IPC分类号： H01L21/027 , C08L53/00 , H01L21/033 , H01L21/3105 , H01L21/02
CPC分类号： H01L21/0273 , B81C1/00031 , B81C2201/0149 , C08G81/00 , C08L53/005 , H01L21/02118 , H01L21/02175 , H01L21/02318 , H01L21/0332 , H01L21/0337 , H01L21/31058
摘要： A self-assembled nanostructure comprises first domains and second domains. The first domains comprise a first block of a block copolymer material and an activatable catalyst. The second domains comprise a second block and substantially without the activatable catalyst. The activatable catalyst is capable of generating catalyst upon application of activation energy, and the generated catalyst is capable of reacting with a metal oxide precursor to provide a metal oxide. A semiconductor structure comprises such self-assembled nanostructure on a substrate.
摘要翻译：自组装纳米结构包括第一结构域和第二结构域。第一结构域包括嵌段共聚物材料的第一嵌段和可活化的催化剂。第二结构域包含第二嵌段并基本上不含可活化的催化剂。可活化的催化剂能够在施加活化能时产生催化剂，并且所产生的催化剂能够与金属氧化物前体反应以提供金属氧化物。半导体结构在衬底上包括这样的自组装纳米结构。

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