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1. 发明公开

US20240074153A1 CONDUCTIVE STRUCTURES 审中-公开
公开(公告)号：US20240074153A1
公开(公告)日：2024-02-29
申请号：US17896039
申请日：2022-08-25
申请人： Micron Technology, Inc.
发明人： Daniel Billingsley , Jaydip Guha , Marko Milojevic , Sau Ha Cheung , Luca Fumagalli
IPC分类号： H01L27/108 , H01B1/02
CPC分类号： H01L27/10823 , H01B1/02 , H01L27/10876
摘要： Methods, apparatuses, and systems related to conductive structures are described. An example conductive structure includes a first conductive material including a conductive metal nitride, where the first conductive material has a thickness of at least 0.5 nanometers, and a second conductive material including a conductive metal, where the second conductive material is disposed on a first surface of the first conductive material.

2. 发明授权

US11735672B2 Integrated assemblies and methods of forming integrated assemblies 有权
公开(公告)号：US11735672B2
公开(公告)日：2023-08-22
申请号：US17216269
申请日：2021-03-29
申请人： Micron Technology, Inc.
发明人： Aaron Michael Lowe , Zhuo Chen , Marko Milojevic , Timothy A. Quick , Richard J. Hill , Scott E. Sills
IPC分类号： H01L29/786 , H01L27/13 , H01L27/12 , H10B53/20 , H10B12/00
CPC分类号： H01L29/78642 , H01L27/1203 , H01L27/13 , H10B12/05 , H10B12/31 , H10B53/20
摘要： Some embodiments include an integrated transistor having an active region comprising semiconductor material. A conductive gating structure is adjacent to the active region. The conductive gating structure includes an inner region proximate the active region and includes an outer region distal from the active region. The inner region includes a first material containing titanium and nitrogen, and the outer region includes a metal-containing second material. The second material has a higher conductivity than the first material. Some embodiments include integrated assemblies. Some embodiments include methods of forming integrated assemblies.

3. 发明公开

US20230148107A1 MEMORY DEVICES INCLUDING STRINGS OF MEMORY CELLS, AND RELATED ELECTRONIC SYSTEMS 审中-公开
公开(公告)号：US20230148107A1
公开(公告)日：2023-05-11
申请号：US18148662
申请日：2022-12-30
申请人： Micron Technology, Inc.
发明人： John D. Hopkins , Jordan D. Greenlee , Marko Milojevic
IPC分类号： H01L23/532 , H10B41/27 , H10B41/35 , H01L23/522 , H01L27/146 , H10N70/00 , H01L21/762 , H04N21/422 , H04N21/21 , H10B41/30
CPC分类号： H01L23/53209 , H01L27/11556 , H01L27/11524 , H01L23/5226 , H01L27/14636 , H01L45/1233 , H01L21/76264 , H04N21/4222 , H04N21/21 , H01L27/11521 , H01H2231/002
摘要： A microelectronic device comprises pillar structures extending vertically through an isolation material, conductive lines electrically coupled to the pillar structures, contact structures between the pillar structures and the conductive lines, and interconnect structures between the conductive lines and the contact structures. The conductive lines comprise one or more of titanium, ruthenium, aluminum, and molybdenum. The interconnect structures comprise a material composition that is different than one or more of a material composition of the contact structures and a material composition of the conductive lines. Related memory devices, electronic systems, and methods are also described.

4. 发明授权

US11081364B2 Reduction of crystal growth resulting from annealing a conductive material 有权
公开(公告)号：US11081364B2
公开(公告)日：2021-08-03
申请号：US16269309
申请日：2019-02-06
申请人： Micron Technology, Inc.
发明人： Marko Milojevic , John A. Smythe, III
IPC分类号： H01L27/10 , H01L21/321 , H01L21/3205 , H01L21/768 , H01L27/108 , H01L49/02
摘要： Systems, apparatuses, and methods related to reduction of crystal growth resulting from annealing a conductive material are described. An example apparatus includes a conductive material selected to have an electrical resistance that is reduced as a result of annealing. A stabilizing material may be formed over a surface of the conductive material. The stabilizing material may be selected to have properties that include stabilization of the reduced electrical resistance of the conductive material and reduction of a degree of freedom of crystal growth relative to the surface resulting from recrystallization of the conductive material during the annealing.

5. 发明授权

US09553264B2 Memory cells and semiconductor structures including electrodes comprising a metal, and related methods 有权
标题翻译：包含金属的电极的存储单元和半导体结构及相关方法
公开(公告)号：US09553264B2
公开(公告)日：2017-01-24
申请号：US14726779
申请日：2015-06-01
申请人： Micron Technology, Inc.
发明人： Dale W. Collins , Marko Milojevic , Scott E. Sills , Si-Young Park
IPC分类号： H01L45/00
CPC分类号： H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/1266 , H01L45/141 , H01L45/145 , H01L45/146 , H01L45/16
摘要： Memory cells (e.g., CBRAM cells) include an ion source material over an active material and an electrode comprising metal silicide over the ion source material. The ion source material may include at least one of a chalcogenide material and a metal. Apparatuses, such as systems and devices, include a plurality of such memory cells. Memory cells include an adhesion material of metal silicide between a ion source material and an electrode of elemental metal. Methods of forming a memory cell include forming a first electrode, forming an active material, forming an ion source material, and forming a second electrode including metal silicide over the metal ion source material. Methods of adhering a material including copper and a material including tungsten include forming a tungsten silicide material over a material including copper and treating the materials.
摘要翻译：存储单元（例如，CBRAM单元）包括活性材料上的离子源材料和在离子源材料上的包含金属硅化物的电极。离子源材料可以包括硫族化物材料和金属中的至少一种。装置，例如系统和装置，包括多个这样的存储单元。存储单元包括在离子源材料和元素金属电极之间的金属硅化物的粘附材料。形成存储单元的方法包括形成第一电极，形成活性材料，形成离子源材料，以及在金属离子源材料上形成包括金属硅化物的第二电极。包括铜和包括钨的材料的材料的粘合方法包括在包括铜的材料上形成硅化钨材料并处理材料。

6. 发明授权

US11574870B2 Microelectronic devices including conductive structures, and related methods 有权
公开(公告)号：US11574870B2
公开(公告)日：2023-02-07
申请号：US16990518
申请日：2020-08-11
申请人： Micron Technology, Inc.
发明人： John D. Hopkins , Jordan D. Greenlee , Marko Milojevic
IPC分类号： H01L23/532 , H01L23/522 , H01L27/146 , H01L27/11556 , H01L27/11524 , H01L45/00 , H01L21/762 , H04N21/422 , H04N21/21 , H01L27/11521
摘要： A microelectronic device comprises pillar structures extending vertically through an isolation material, conductive lines electrically coupled to the pillar structures, contact structures between the pillar structures and the conductive lines, and interconnect structures between the conductive lines and the contact structures. The conductive lines comprise one or more of titanium, ruthenium, aluminum, and molybdenum. The interconnect structures comprise a material composition that is different than one or more of a material composition of the contact structures and a material composition of the conductive lines. Related memory devices, electronic systems, and methods are also described.

7. 发明授权

US09324943B2 Filamentary memory devices and methods 有权
标题翻译：遗迹记忆装置和方法
公开(公告)号：US09324943B2
公开(公告)日：2016-04-26
申请号：US14451179
申请日：2014-08-04
申请人： Micron Technology, Inc.
发明人： Lei Bi , Beth R. Cook , Marko Milojevic , Durai Vishak Nirmal Ramaswamy
IPC分类号： G11C11/00 , H01L45/00 , G11C13/00 , H01L27/24
CPC分类号： H01L45/08 , G11C13/0002 , G11C13/0007 , G11C13/0035 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2013/0083 , G11C2213/35 , H01L27/2463 , H01L45/145
摘要： Apparatus, devices, systems, and methods are described that include filamentary memory cells. Mechanisms to substantially remove the filaments in the devices are described, so that the logical state of a memory cell that includes the removable filament can be detected. Additional apparatus, systems, and methods are described.
摘要翻译：描述了包括丝状记忆单元的装置，装置，系统和方法。描述了基本上去除器件中的细丝的机理，使得可以检测到包括可除去细丝的存储器单元的逻辑状态。描述了附加装置，系统和方法。

8. 发明授权

US09269899B1 Electronic device, memory cell, and method of flowing electric current 有权
标题翻译：电子设备，存储单元以及流过电流的方法
公开(公告)号：US09269899B1
公开(公告)日：2016-02-23
申请号：US14615188
申请日：2015-02-05
申请人： Micron Technology, Inc.
发明人： Kamal M. Karda , Marko Milojevic , David H. Wells , F. Daniel Gealy
IPC分类号： G11C5/12 , H01L45/00 , G11C13/00
CPC分类号： H01L45/126 , G11C5/12 , G11C11/221 , G11C13/0002 , G11C13/0004 , G11C13/003 , G11C2213/76 , H01L27/2409 , H01L45/04 , H01L45/06 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： An electronic device includes two conductive electrodes. A first current path extends from one of the electrodes to the other and has a dominant thermally activated conduction activation energy of 0.5 eV to 3.0 eV. A second current path extends from the one electrode to the other and is circuit-parallel the first current path. The second current path exhibits a minimum 100-times increase in electrical conductivity for increasing temperature within a temperature range of no more than 50° C. between 300° C. and 800° C. and exhibits a minimum 100-times decrease in electrical conductivity for decreasing temperature within the 50° C. temperature range. Other embodiments are disclosed.
摘要翻译：电子设备包括两个导电电极。第一电流路径从一个电极延伸到另一个电极，并且具有0.5eV至3.0eV的显性热激活传导激活能。第二电流路径从一个电极延伸到另一个电极并且与第一电流路径电路并联。在300℃和800℃之间，在不超过50℃的温度范围内增加温度，第二电流路径的电导率最小提高100倍，并且电导率最小降低100倍用于在50°C温度范围内降低温度。公开了其他实施例。

9. 发明申请

US20140339491A1 FILAMENTARY MEMORY DEVICES AND METHODS 有权
公开(公告)号：US20140339491A1
公开(公告)日：2014-11-20
申请号：US14451179
申请日：2014-08-04
申请人： Micron Technology, Inc.
发明人： Lei Bi , Beth R. Cook , Marko Milojevic , Durai Vishak Nirmal Ramaswamy
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/08 , G11C13/0002 , G11C13/0007 , G11C13/0035 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2013/0083 , G11C2213/35 , H01L27/2463 , H01L45/145
摘要： Apparatus, devices, systems, and methods are described that include filamentary memory cells. Mechanisms to substantially remove the filaments in the devices are described, so that the logical state of a memory cell that includes the that includes the removable filament can be detected. Additional apparatus, systems, and methods are described.
摘要翻译：描述了包括丝状记忆单元的装置，装置，系统和方法。描述了基本上去除装置中的长丝的机构，使得可以检测到包括可去除细丝的存储单元的逻辑状态。描述了附加装置，系统和方法。

10. 发明授权

US12113019B2 Memory devices including strings of memory cells, and related electronic systems 有权
公开(公告)号：US12113019B2
公开(公告)日：2024-10-08
申请号：US18148662
申请日：2022-12-30
申请人： Micron Technology, Inc.
发明人： John D. Hopkins , Jordan D. Greenlee , Marko Milojevic
IPC分类号： H01L23/522 , H01L21/762 , H01L23/532 , H01L27/146 , H04N21/21 , H04N21/422 , H10B41/27 , H10B41/30 , H10B41/35 , H10N70/00
CPC分类号： H01L23/53209 , H01L21/76264 , H01L23/5226 , H01L27/14636 , H04N21/21 , H04N21/4222 , H10B41/27 , H10B41/30 , H10B41/35 , H10N70/826 , H01H2231/002
摘要： A microelectronic device comprises pillar structures extending vertically through an isolation material, conductive lines electrically coupled to the pillar structures, contact structures between the pillar structures and the conductive lines, and interconnect structures between the conductive lines and the contact structures. The conductive lines comprise one or more of titanium, ruthenium, aluminum, and molybdenum. The interconnect structures comprise a material composition that is different than one or more of a material composition of the contact structures and a material composition of the conductive lines. Related memory devices, electronic systems, and methods are also described.

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