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1. 发明申请

US20220020685A1 SLIT OXIDE AND VIA FORMATION TECHNIQUES 有权
公开(公告)号：US20220020685A1
公开(公告)日：2022-01-20
申请号：US17489262
申请日：2021-09-29
申请人： Micron Technology, Inc.
发明人： Hongqi Li , Kaushik Varma Sagi , Manzar Siddik
IPC分类号： H01L23/522 , H01L21/768
摘要： Methods and apparatuses for slit oxide and via formation techniques are described, for example, for fabricating three dimensional memory devices that may include multiple decks of memory cells that each include memory cell stacks and associated access lines. The techniques may create an interconnect region without removing a portion of the memory cell stacks. The interconnect region may include one or more conductive vias extending through the decks of memory cells to couple the access lines with logic circuitry that may be located underneath the decks of memory cells. Further, the techniques may divide an array of memory cells into multiple subarrays of memory cells by forming trenches, which may sever the access lines. In some cases, each subarray of memory cells may be electrically isolated from other subarrays of memory cells. The techniques may reduce a total number of fabrication process steps.

2. 发明申请

US20210175247A1 Memory Arrays And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells 有权
公开(公告)号：US20210175247A1
公开(公告)日：2021-06-10
申请号：US16705388
申请日：2019-12-06
申请人： Micron Technology, Inc.
发明人： Manzar Siddik , Chris M. Carlson , Terry H. Kim , Kunal Shrotri , Srinath Venkatesan
IPC分类号： H01L27/11582 , H01L27/11556 , H01L21/3115 , H01L21/3215
摘要： A memory array comprising strings of memory cells comprises a vertical stack comprising alternating insulative tiers and conductive tiers. The strings of memory cells in the stack comprise channel-material strings and storage-material strings extending through the insulative tiers and the conductive tiers. At least some of the storage material of the storage-material strings in individual of the insulative tiers are intrinsically less charge-transmissive than is the storage material in the storage-material strings in individual of the conductive tiers. Other aspects, including method, are disclosed.

3. 发明申请

US20180331113A1 SEMICONDUCTOR STRUCTURES, MEMORY CELLS AND DEVICES COMPRISING FERROELECTRIC MATERIALS, SYSTEMS INCLUDING SAME, AND RELATED METHODS 审中-公开
公开(公告)号：US20180331113A1
公开(公告)日：2018-11-15
申请号：US15590863
申请日：2017-05-09
申请人： Micron Technology, Inc.
发明人： Albert Liao , Wayne I. Kinney , Yi Fang Lee , Manzar Siddik
IPC分类号： H01L27/11507 , H01L27/11509 , H01L49/02 , G11C11/22
CPC分类号： H01L27/11507 , G11C11/221 , G11C11/2297 , H01L27/11509 , H01L28/55
摘要： A semiconductor structure includes an electrode, a ferroelectric material adjacent the electrode, the ferroelectric material comprising an oxide of at least one of hafnium and zirconium, the ferroelectric material doped with bismuth, and another electrode adjacent the ferroelectric material on an opposite side thereof from the first electrode. Related semiconductor structures, memory cells, semiconductor devices, electronic systems, and related methods are disclosed.

4. 发明申请

US20170331032A1 Magnetic Tunnel Junctions 审中-公开
公开(公告)号：US20170331032A1
公开(公告)日：2017-11-16
申请号：US15588994
申请日：2017-05-08
申请人： Micron Technology, Inc.
发明人： Wei Chen , Witold Kula , Manzar Siddik , Suresh Ramarajan , Jonathan D. Harms
IPC分类号： H01L43/02 , H01L43/10 , H01L27/22
CPC分类号： H01L43/02 , G11C11/161 , H01L27/224 , H01L43/08 , H01L43/10
摘要： A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.

5. 发明授权

US09553259B2 Magnetic tunnel junctions 有权
标题翻译：磁隧道结
公开(公告)号：US09553259B2
公开(公告)日：2017-01-24
申请号：US15000620
申请日：2016-01-19
申请人： Micron Technology, Inc.
发明人： Manzar Siddik
IPC分类号： G11B5/127 , H01L43/10 , H01L43/02 , H01L43/08
CPC分类号： H01L43/10 , G11B5/127 , G11C11/161 , H01L43/02 , H01L43/08
摘要： A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and comprises magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic recording material of the first electrode comprises a first crystalline magnetic region, in one embodiment comprising Co and Fe. In one embodiment, the first electrode comprises a second amorphous region comprising amorphous XN, where X is one or more of W, Mo, Cr, V, Nb, Ta, Al, and Ti. In one embodiment, the first electrode comprises a second region comprising Co, Fe, and N.
摘要翻译：磁性隧道结包括包含磁记录材料的导电第一磁性电极。导电的第二磁电极与第一电极间隔开并且包括磁性参考材料。非磁性隧道绝缘体材料位于第一和第二电极之间。第一电极的磁记录材料包括第一结晶磁性区域，在一个实施方案中包括Co和Fe。在一个实施例中，第一电极包括包含非晶XN的第二非晶区域，其中X是W，Mo，Cr，V，Nb，Ta，Al和Ti中的一种或多种。在一个实施例中，第一电极包括包含Co，Fe和N的第二区域。

6. 发明申请

US20160308123A1 METHODS OF FORMING A MAGNETIC ELECTRODE OF A MAGNETIC TUNNEL JUNCTION AND METHODS OF FORMING A MAGNETIC TUNNEL JUNCTION 有权
标题翻译：形成磁性隧道结的磁电极的方法和形成磁性隧道结的方法
公开(公告)号：US20160308123A1
公开(公告)日：2016-10-20
申请号：US14687317
申请日：2015-04-15
申请人： Micron Technology, Inc.
发明人： Manzar Siddik , Witold Kula , Gurtej S. Sandhu
IPC分类号： H01L43/12 , H01L43/10 , H01L43/08
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08 , H01L43/10
摘要： A method of forming a magnetic electrode of a magnetic tunnel junction comprises forming non-magnetic MgO-comprising material over conductive material of the magnetic electrode being formed. An amorphous metal is formed over the MgO-comprising material. Amorphous magnetic electrode material comprising Co and Fe is formed over the amorphous metal. The amorphous magnetic electrode material is devoid of B. Non-magnetic tunnel insulator material comprising MgO is formed directly against the amorphous magnetic electrode material. The tunnel insulator material is devoid of B. After forming the tunnel insulator material, the amorphous Co and Fe-comprising magnetic electrode material is annealed at a temperature of at least about 250° C. to form crystalline Co and Fe-comprising magnetic electrode material from an MgO-comprising surface of the tunnel insulator material. The crystalline Co and Fe-comprising magnetic electrode material is devoid of B. Other method and non-method embodiments are disclosed.
摘要翻译：形成磁性隧道结的磁极的方法包括在形成的磁极的导电材料上形成非磁性的含MgO材料。在包含MgO的材料上形成无定形金属。包含Co和Fe的非晶磁性电极材料形成在无定形金属上。无定形磁极材料不含B.直接与非晶磁性电极材料形成包含MgO的非磁性隧道绝缘体材料。隧道绝缘体材料没有B.在形成隧道绝缘体材料之后，在至少约250℃的温度下对包含无定形Co和Fe的磁性电极材料进行退火以形成含Co和Fe的结晶的电极材料从隧道绝缘体材料的包含MgO的表面。含有Co和Fe的结晶的电极材料不含B。公开了其它方法和非方法的实施方案。

7. 发明申请

US20160211446A1 SPIN TRANSFER TORQUE MEMORY CELLS 有权
公开(公告)号：US20160211446A1
公开(公告)日：2016-07-21
申请号：US15084688
申请日：2016-03-30
申请人： Micron Technology, Inc.
发明人： Manzar Siddik , Witold Kula
IPC分类号： H01L43/12 , H01L43/08 , H01L43/10 , H01L43/02
CPC分类号： H01L43/12 , H01L43/02 , H01L43/08 , H01L43/10
摘要： Spin transfer torque memory cells and methods of forming the same are described herein. As an example, spin transfer torque memory cells may include an amorphous material, a storage material formed on the amorphous material, wherein the storage material is substantially boron free, an interfacial perpendicular magnetic anisotropy material formed on the storage material, a reference material formed on the interfacial perpendicular magnetic anisotropy material, wherein the reference material is substantially boron free, a buffer material formed on the reference material and a pinning material formed on the buffer material.

8. 发明申请

US20160211440A1 SEMICONDUCTOR DEVICES, MAGNETIC TUNNEL JUNCTIONS, AND METHODS OF FABRICATION THEREOF 审中-公开
标题翻译：半导体器件，磁性隧道结及其制造方法
公开(公告)号：US20160211440A1
公开(公告)日：2016-07-21
申请号：US14597903
申请日：2015-01-15
申请人： Micron Technology, Inc.
发明人： Manzar Siddik , Witold Kula , Suresh Ramarajan
IPC分类号： H01L43/08 , G11C11/16 , H01L43/12 , H01L43/02 , H01L43/10
CPC分类号： H01L43/08 , G11C11/161 , H01L43/12
摘要： A semiconductor device comprises an array of magnetic cell structures each comprising a magnetic tunnel junction over an electrode on a substrate. Each of the magnetic tunnel junctions includes a magnetic material over the substrate, a first tunnel barrier material over the magnetic material, a second tunnel barrier material over the annealed first tunnel barrier material, and another magnetic material over the second tunnel barrier material. Each magnetic tunnel junction is configured to exhibit a tunnel magnetoresistance greater than or equal to about 180% at a resistance area product of less than about 8 ohm μm2. The semiconductor device also includes another electrode over the another magnetic material. Semiconductor devices including the magnetic tunnel junctions, methods of forming the magnetic tunnel junctions, and methods of forming semiconductor devices including the magnetic tunnel junctions are disclosed.
摘要翻译：半导体器件包括磁性单元结构的阵列，每个磁性单元结构包括在衬底上的电极上的磁性隧道结。每个磁性隧道结包括在该基底上的磁性材料，在该磁性材料上方的第一隧道阻挡材料，该退火的第一隧道屏障材料上方的第二隧道阻挡材料，以及该第二隧道屏障材料上的另一种磁性材料。每个磁性隧道结被配置为在小于约8欧姆·μm2的电阻面积产生大于或等于约180％的隧道磁阻。半导体器件还包括在另一磁性材料上的另一电极。公开了包括磁隧道结的半导体器件，形成磁隧道结的方法，以及形成包括磁性隧道结的半导体器件的方法。

9. 发明申请

US20150303374A1 SPIN TRANSFER TORQUE MEMORY CELLS 有权
标题翻译：旋转转子记忆体细胞
公开(公告)号：US20150303374A1
公开(公告)日：2015-10-22
申请号：US14448343
申请日：2014-07-31
申请人： Micron Technology, Inc.
发明人： Manzar Siddik , Witold Kula
IPC分类号： H01L43/08 , H01L43/10 , H01L43/12 , H01L43/02
CPC分类号： H01L43/12 , H01L43/02 , H01L43/08 , H01L43/10
摘要： Spin transfer torque memory cells and methods of forming the same are described herein. As an example, spin transfer torque memory cells may include an amorphous material, a storage material formed on the amorphous material, wherein the storage material is substantially boron free, an interfacial perpendicular magnetic anisotropy material formed on the storage material, a reference material formed on the interfacial perpendicular magnetic anisotropy material, wherein the reference material is substantially boron free, a buffer material formed on the reference material and a pinning material formed on the buffer material.
摘要翻译：旋转传递扭矩存储单元及其形成方法在此描述。作为示例，自旋转移力矩存储单元可以包括无定形材料，形成在非晶材料上的储存材料，其中储存材料基本上不含硼，形成在存储材料上的界面垂直磁各向异性材料，界面垂直磁各向异性材料，其中参考材料基本上不含硼，形成在参考材料上的缓冲材料和形成在缓冲材料上的钉扎材料。

10. 发明授权

US12080329B2 Ferroelectric devices and ferroelectric memory cells 有权
公开(公告)号：US12080329B2
公开(公告)日：2024-09-03
申请号：US17812132
申请日：2022-07-12
申请人： Micron Technology, Inc.
发明人： Albert Liao , Wayne I. Kinney , Yi Fang Lee , Manzar Siddik
IPC分类号： G11C11/22 , H01L49/02 , H10B53/30 , H10B53/40
CPC分类号： G11C11/221 , G11C11/2297 , H01L28/40 , H01L28/55 , H10B53/30 , H10B53/40 , G11C11/2273 , G11C11/2275
摘要： A semiconductor structure includes an electrode, a ferroelectric material adjacent the electrode, the ferroelectric material comprising an oxide of at least one of hafnium and zirconium, the ferroelectric material doped with bismuth, and another electrode adjacent the ferroelectric material on an opposite side thereof from the first electrode. Related semiconductor structures, memory cells, semiconductor devices, electronic systems, and related methods are disclosed.

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