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    • 1. 发明授权
    • Apparatus for computing power consumption of MOS transistor logic
function block
    • 用于计算MOS晶体管逻辑功能块功耗的装置
    • US5473548A
    • 1995-12-05
    • US100117
    • 1993-07-30
    • Naoko OmoriMichio Komoda
    • Naoko OmoriMichio Komoda
    • G01R31/28G06F17/50
    • G06F17/5022G06F2217/78
    • Apparatus for computing power consumption in an MOS transistor logic function block include circuit information deriving unit for deriving circuit information appropriate for a logic function block of interest based on input and output varying signals to and from said logic function block, load capacitance data, and a net list, slew rate determining unit for determining an input slew rate based on information from said circuit information deriving unit, a memory section containing expressions for use in computation of power consumption caused by through-current, each expression corresponding to a different one of various types of logic function blocks and representing power consumption caused by through-current as a function of a slew rate and load capacitance, and power consumption determining unit for determining power consumption due to through-current by substituting the slew rate as determined by said slew rate determining unit and load capacitance data into the computation expression as read from said memory section.
    • 用于计算MOS晶体管逻辑功能块中的功耗的装置包括:电路信息导出单元,用于基于输入和输出与所述逻辑功能块,负载电容数据以及所述逻辑功能块的变化信号的输入和输出,导出适合于感兴趣的逻辑功能块的电路信息 网络列表,转换速率确定单元,用于基于来自所述电路信息导出单元的信息确定输入转换速率;存储器部分,其包含用于计算由贯通电流引起的功耗的表达式,每个表达对应于不同的各种 逻辑功能块的类型,并且表示作为转换速率和负载电容的函数的通过电流引起的功率消耗;以及功率消耗确定单元,用于通过替换由所述转换速率确定的转换速率来确定由于通过电流的功率消耗 将单位和负载电容数据确定到计算表达式中 从所述存储器部分读取。
    • 2. 发明授权
    • Clock forming method for semiconductor integrated circuit and program product for the method
    • 半导体集成电路的时钟形成方法和方法的程序产品
    • US07479825B2
    • 2009-01-20
    • US11584492
    • 2006-10-23
    • Michio Komoda
    • Michio Komoda
    • H01L25/00
    • G06F17/5045G06F2217/62
    • Regions G1 to G8 each including a predetermined number of flip-flops (FF) are divided into two groups. This dividing is performed so that the number of data connection channels intersected by a boundary is minimized. In the case of intersection of two data connection channels (A1, A2), the number of data connection channels intersected by the boundary is two, the minimum number. After grouping of all the regions (G1 to G4, G5 to G8), clock tree synthesis (CTS) is performed. If clock forming is performed in this way, the increase in clock skew on an actual device can be limited and on-chip variation resistance can be increased.
    • 每个包括预定数量的触发器(FF)的区域G1至G8被分成两组。 执行这种划分,使得由边界相交的数据连接信道的数量被最小化。 在两个数据连接通道(A1,A2)的交点的情况下,边界相交的数据连接通道的数量是两个,最小数量。 在所有区域(G1至G4,G5至G8)分组之后,执行时钟树合成(CTS)。 如果以这种方式执行时钟形成,则可以限制实际器件上的时钟偏移的增加,并且可以增加片上变化电阻。
    • 5. 发明授权
    • Semiconductor integrated circuit device
    • 半导体集成电路器件
    • US06292043B1
    • 2001-09-18
    • US09453795
    • 1999-12-03
    • Junya ShiraishiMichio Komoda
    • Junya ShiraishiMichio Komoda
    • H03K300
    • G06F1/10
    • In a semiconductor integrated circuit device, a clock buffer is arranged at the center of a chip by using a core I/O technique for arranging an input/output buffer at an arbitrary position. A clock is wired such that, with reference to a wire extending to a circuit in a chip which is farthest from the clock buffer and must be synchronously controlled. Wires extending to the other circuits are intentionally bypassed to make wires extending to all the circuits electrically equal to each other in length. Thus, a skew of a clock can be suppressed due to the isometric wiring.
    • 在半导体集成电路器件中,通过使用用于在任意位置布置输入/输出缓冲器的核心I / O技术将时钟缓冲器布置在芯片的中心。 时钟被布线,使得参考延伸到与时钟缓冲器最远的芯片中的电路并且必须被同步控制的导线。 延伸到其他电路的电线被有意地绕过,使得延伸到所有电路的电线在长度上彼此电相等。 因此,由于等距布线可以抑制时钟的偏斜。
    • 6. 发明授权
    • Delay calculation method capable of calculating delay time with small margin of error
    • 延迟计算方法能够计算出误差小的延迟时间
    • US07496491B2
    • 2009-02-24
    • US11174542
    • 2005-07-06
    • Michio Komoda
    • Michio Komoda
    • G06F17/50G06G7/48
    • G06F17/5031
    • A delay calculation method that is capable of calculating delay time with a small margin of error is provided for delay calculation in a logic circuit. The operating characteristics of transistor are expressed with a fixed resistance and a power supply voltage that changes with time. The power supply voltage is represented as a waveform which is a combination of two straight lines: the one indicating that the voltage, after a fixed delay of t0, increases to V1 during Δt1; and the one indicating that the voltage increases from V1 to E during Δt2 and thereafter remains at the fixed value of E. A difference in the shapes of input waveforms is adopted as a correction parameter to determine the values of Δt1, V1, and Δt2.
    • 在逻辑电路中提供延迟计算方法,其延迟计算方法能够计算误差小的​​延迟时间。 晶体管的工作特性用固定电阻和随时间变化的电源电压表示。 电源电压表示为两条直线的组合的波形:表示在固定延迟t0之前的电压在Deltat1期间增加到V1的电压; 并且在Deltat2期间电压从V1增加到E,之后保持在E的固定值。采用输入波形的形状差作为校正参数来确定Deltat1,V1和Deltat2的值。
    • 7. 发明申请
    • Clock forming method for semiconductor integrated circuit and program product for the method
    • 半导体集成电路的时钟形成方法和方法的程序产品
    • US20070094627A1
    • 2007-04-26
    • US11584492
    • 2006-10-23
    • Michio Komoda
    • Michio Komoda
    • G06F17/50
    • G06F17/5045G06F2217/62
    • Regions G1 to G8 each including a predetermined number of flip-flops (FF) are divided into two groups. This dividing is performed so that the number of data connection channels intersected by a boundary is minimized. In the case of intersection of two data connection channels (A1, A2), the number of data connection channels intersected by the boundary is two, the minimum number. After grouping of all the regions (G1 to G4, G5 to G8), clock tree synthesis (CTS) is performed. If clock forming is performed in this way, the increase in clock skew on an actual device can be limited and on-chip variation resistance can be increased.
    • 包括预定数量的触发器(FF)的区域G 1至G 8被分成两组。 执行这种划分,使得由边界相交的数据连接信道的数量被最小化。 在两个数据连接通道(A 1,A 2)的交点的情况下,边界相交的数据连接通道的数量是最小数量。 在所有区域(G 1至G 4,G 5至G 8)分组之后,执行时钟树合成(CTS)。 如果以这种方式执行时钟形成,则可以限制实际器件上的时钟偏移的增加,并且可以增加片上变化电阻。