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1. 发明申请

US20070068626A1 Vacuum processing apparatus 失效
标题翻译：真空加工设备
公开(公告)号：US20070068626A1
公开(公告)日：2007-03-29
申请号：US11512309
申请日：2006-08-30
申请人： Michiaki Kobayashi , Tsutomu Nakamura , Takeo Uchino , Akitaka Makino , Masashi Nakagome
发明人： Michiaki Kobayashi , Tsutomu Nakamura , Takeo Uchino , Akitaka Makino , Masashi Nakagome
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/67126 , H01J37/32495 , H01J37/3266 , H01J37/32743
摘要： A plasma processing apparatus which contributes to reducing required time for maintenance and thereby to enhancing the efficiency of processing and that of apparatus operation is to be provided. A vacuum processing apparatus comprises a vacuum vessel in which a substrate-shaped sample is arranged in an internally arranged processing chamber in which the pressure is reduced; a transfer chamber to which the vacuum vessel is linked and through whose inside reduced in pressure the sample is transferred; a passage which establishes communication between the transfer chamber and the vacuum vessel in a state in which the transfer chamber and the processing chamber are linked to each other and through whose inside the sample not yet processed or already processed is transferred; and a covering member which is removably coupled to cover the internal wall face of the passage, wherein the sample is processed within the processing chamber with a plasma formed in the processing chamber.
摘要翻译：提供一种等离子体处理装置，其有助于减少维护所需的时间，从而提高处理效率和装置操作的效率。真空处理装置包括真空容器，其中基板形样品布置在其中压力降低的内部布置的处理室中; 传送室，真空容器连接到该传送室，并且其内部的压力降低，样品被传送; 在传送室和处理室彼此连接并且样品尚未处理或已经被处理的内部的状态下传送在传送室和真空容器之间建立连通的通道; 以及覆盖部件，其可移除地联接以覆盖通道的内壁面，其中，在处理室内用处理室中形成的等离子体处理样品。

2. 发明申请

US20080066859A1 Plasma processing apparatus capable of adjusting pressure within processing chamber 审中-公开
标题翻译：能够调节处理室内的压力的等离子体处理装置
公开(公告)号：US20080066859A1
公开(公告)日：2008-03-20
申请号：US11512124
申请日：2006-08-30
申请人： Michiaki Kobayashi , Tsutomu Nakamura , Akitaka Makino
发明人： Michiaki Kobayashi , Tsutomu Nakamura , Akitaka Makino
IPC分类号： H01L21/306
CPC分类号： H01J37/3244 , H01J37/32834
摘要： A vacuum pump exhausts gas within the processing chamber from a lower portion of a sample so as to reduce pressure within a processing chamber. The vacuum pump includes a rotary vane and a fixed vane which are arranged within a case of the vacuum pump and have a plurality of impeller blades in a coaxial manner; an exhausting port for exhausting the gas exhausted from the rotary vane outside the case; and a conducting port arranged along a lower direction of the rotary vane, into which inert gas is conducted, which are provided on a circumference thereof. An MFC (flow rate adjusting device) is arranged between a gas storage unit of the inert gas and the conducting port, for adjusting an amount of the inert gas.
摘要翻译：真空泵从样品的下部排出处理室内的气体，以减少处理室内的压力。所述真空泵包括旋转叶片和固定叶片，所述旋转叶片和固定叶片布置在所述真空泵的壳体内并具有同轴的多个叶轮叶片; 用于将从旋转叶片排出的气体排出外壳的排气口; 以及沿其旋转叶片的下方向布置的导电口，惰性气体被引导入其周围。在惰性气体的气体存储单元和导电口之间设置MFC（流量调节装置），用于调节惰性气体的量。

3. 发明授权

US08048259B2 Vacuum processing apparatus 失效
标题翻译：真空加工设备
公开(公告)号：US08048259B2
公开(公告)日：2011-11-01
申请号：US11512309
申请日：2006-08-30
申请人： Michiaki Kobayashi , Tsutomu Nakamura , Takeo Uchino , Akitaka Makino , Masashi Nakagome
发明人： Michiaki Kobayashi , Tsutomu Nakamura , Takeo Uchino , Akitaka Makino , Masashi Nakagome
IPC分类号： C23F1/00 , C23C16/00 , C23C14/00
CPC分类号： H01L21/67126 , H01J37/32495 , H01J37/3266 , H01J37/32743
摘要： A plasma processing apparatus which contributes to reducing required time for maintenance and thereby to enhancing the efficiency of processing and that of apparatus operation is to be provided. A vacuum processing apparatus comprises a vacuum vessel in which a substrate-shaped sample is arranged in an internally arranged processing chamber in which the pressure is reduced; a transfer chamber to which the vacuum vessel is linked and through whose inside reduced in pressure the sample is transferred; a passage which establishes communication between the transfer chamber and the vacuum vessel in a state in which the transfer chamber and the processing chamber are linked to each other and through whose inside the sample not yet processed or already processed is transferred; and a covering member which is removably coupled to cover the internal wall face of the passage, wherein the sample is processed within the processing chamber with a plasma formed in the processing chamber.
摘要翻译：提供一种等离子体处理装置，其有助于减少维护所需的时间，从而提高处理效率和装置操作的效率。真空处理装置包括真空容器，其中基板形样品布置在其中压力降低的内部布置的处理室中; 传送室，真空容器连接到该传送室，并且其内部的压力降低，样品被传送; 在传送室和处理室彼此连接并且样品尚未处理或已经被处理的内部的状态下传送在传送室和真空容器之间建立连通的通道; 以及覆盖部件，其可移除地联接以覆盖通道的内壁面，其中，在处理室内用处理室中形成的等离子体处理样品。

4. 外观设计

USD556704S1 Grounded electrode for a plasma processing apparatus 有权
标题翻译：等离子体处理装置的接地电极
公开(公告)号：USD556704S1
公开(公告)日：2007-12-04
申请号：US29236982
申请日：2005-08-25
申请人： Tsutomu Nakamura , Susumu Tauchi , Akitaka Makino
设计人： Tsutomu Nakamura , Susumu Tauchi , Akitaka Makino

5. 外观设计

USD557425S1 Cover ring for a plasma processing apparatus 有权
标题翻译：等离子体处理装置的盖环
公开(公告)号：USD557425S1
公开(公告)日：2007-12-11
申请号：US29236933
申请日：2005-08-25
申请人： Tsutomu Nakamura , Susumu Tauchi , Akitaka Makino
设计人： Tsutomu Nakamura , Susumu Tauchi , Akitaka Makino

6. 发明授权

US08897906B2 Wafer processing based on sensor detection and system learning 有权
标题翻译：基于传感器检测和系统学习的晶片处理
公开(公告)号：US08897906B2
公开(公告)日：2014-11-25
申请号：US13236818
申请日：2011-09-20
申请人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Hideki Kihara
发明人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Hideki Kihara
IPC分类号： H01L21/68 , H01L21/677
CPC分类号： H01L21/68 , H01L21/67742 , Y10S901/03 , Y10S901/46
摘要： A vacuum processing apparatus includes a robot connected to a vacuum container to carry a wafer on one of its two arms to or from a processing chamber; a unit to detect an amount of deviation of the wafer from a predetermined wafer mounting position on the arm that may occur when the robot carries the wafer into or out of the processing chamber; and an adjusting device to adjust the operation of the robot based on the detected amount of deviation. The adjusting device adjusts the robot operation based on the result of a teaching operation performed in advance. After being subjected to the initial teaching operation, the robot again undergoes a second teaching operation according to the information on the amount of wafer position deviation that is detected by moving the wafer in a predetermined transfer pattern, before the wafer processing is performed.
摘要翻译：真空处理装置包括连接到真空容器以将其两个臂中的一个上的晶片携带到处理室或从处理室移动的机器人; 用于检测当机器人将晶片进入或离开处理室时可能发生的晶片与在臂上的预定晶片安装位置的偏移量的单元; 以及基于检测到的偏差量来调整机器人的操作的调整装置。调整装置根据预先执行的教学动作的结果调整机器人的动作。在进行初始教导操作之后，根据关于在执行晶片处理之前通过以预定的传送图案移动晶片来检测的晶片位置偏差量的信息，机器人再次进行第二示教操作。

7. 发明授权

US08460467B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US08460467B2
公开(公告)日：2013-06-11
申请号：US13177076
申请日：2011-07-06
申请人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
IPC分类号： C23F1/00 , C23C16/00 , H01L21/677
CPC分类号： H01L21/6719 , H01L21/67017 , Y10S414/135 , Y10S414/139
摘要： A vacuum processing apparatus includes a transfer unit disposed at a center thereof, plural processing chambers, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas, and a mass flow controller unit interposed between two of the processing chambers for supplying gas to the chambers.
摘要翻译：一种真空处理装置，包括设置在其中心的转印单元，多个处理室，每个处理室具有用于支撑待处理物体的处理台，并使用气体进行处理;以及质量流量控制单元，用于向腔室供应气体的处理室。

8. 发明授权

US08286822B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US08286822B2
公开(公告)日：2012-10-16
申请号：US12651701
申请日：2010-01-04
申请人： Susumu Tauchi , Akitaka Makino
发明人： Susumu Tauchi , Akitaka Makino
IPC分类号： B65D6/40 , B65D53/02 , B65D43/04
CPC分类号： H01L21/67126 , H01L21/6719 , H01L21/67196 , H01L21/67201
摘要： The invention provides a highly reliable plasma processing apparatus having stable sealing performance. The vacuum processing apparatus comprises a vacuum vessel having its inside decompressed; an opening disposed in a wall of the vacuum vessel for communicating the inside with the outside thereof and through which a sample to be processed is taken in and out; a valve body 701 disposed outside the wall for airtightly sealing or opening the opening; and a drive unit for driving the valve body to carry out the sealing or opening operation, the drive unit comprising a first member 705 coupled to an actuator 702 that moves along a substantially linear first direction as a result of operation of the actuator, a second member 706 coupled to the first member 705 that moves along a substantially linear second direction that intersects with the first direction, and the valve body 701 coupled to the second member that seals the opening as a result of the movement of the second member.
摘要翻译：本发明提供了具有稳定的密封性能的高度可靠的等离子体处理装置。真空处理装置包括其内部减压的真空容器; 设置在真空容器的壁中的开口，用于将内部与其外部连通，并且待处理样品通过该开口被取出; 阀体701，其设置在所述壁的外侧，用于气密地密封或打开所述开口; 驱动单元，用于驱动阀体进行密封或打开操作，驱动单元包括第一构件705，第一构件705联接到作为致动器的操作的结果沿基本线性的第一方向移动的致动器702;第二构件构件706，其联接到第一构件705，其沿着与第一方向相交的基本上线性的第二方向移动;以及阀体701，其联接到由于第二构件的移动而密封开口的第二构件。

9. 发明申请

US20080217295A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20080217295A1
公开(公告)日：2008-09-11
申请号：US11683014
申请日：2007-03-07
申请人： SUSUMU TAUCHI , Akitaka Makino , Seiichi Watanabe , Naoki Yasui
发明人： SUSUMU TAUCHI , Akitaka Makino , Seiichi Watanabe , Naoki Yasui
IPC分类号： C23F1/00
CPC分类号： C23F4/00 , G03F1/80 , H01J37/32522 , H01L21/67017 , H01L21/67109 , H01L21/6831
摘要： The present invention provides a plasma processing apparatus or a plasma processing method that can etch a multilayer film structure for constituting a gate structure with high accuracy and high efficiency. A plasma processing method of, on processing a sample on a sample stage 112 in a depressurized discharge room 117, etching a multilayer film (including a high-k and a metal gate) at 0.1 Pa or less and with the sample stage 112 temperature-regulated by using a pressure gauge 133 to be used for pressure regulation and connected to the processing room and a main pump for exhaustion 130.
摘要翻译：本发明提供等离子体处理装置或等离子体处理方法，其可以以高精度和高效率蚀刻用于构成栅极结构的多层膜结构。一种等离子体处理方法，在对减压排出室117中的样品台112上的样品进行处理时，蚀刻0.1Pa以下的多层膜（包括高k和金属栅极），并且在样品台112中，通过使用用于压力调节并连接到处理室的压力计133和用于耗尽的主泵130进行调节。

10. 发明申请

US20070209759A1 Plasma etching apparatus and plasma etching method 审中-公开
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20070209759A1
公开(公告)日：2007-09-13
申请号：US11501814
申请日：2006-08-10
申请人： Go Miya , Naoshi Itabashi , Seiichiro Kanno , Akitaka Makino , Hiroshi Akiyama
发明人： Go Miya , Naoshi Itabashi , Seiichiro Kanno , Akitaka Makino , Hiroshi Akiyama
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/32137 , H01J37/32192 , H01J37/3244
摘要： In performing plasma etching with the aim to form a gate electrode on a large-diameter substrate, it is difficult according to prior art methods to ensure the in-plane uniformity of CD shift of the gate electrode. The present invention solves the problem by supplying processing gases having different flow rates and compositions respectively through openings formed at positions opposing to the substrate and at the upper corner or side wall of the processing chamber.
摘要翻译：为了在大直径基板上形成栅电极进行等离子体蚀刻，根据现有技术的方法难以确保栅电极的CD偏移的平面内均匀性。本发明通过分别通过形成在与基板相对的位置处的开口和在处理室的上角或侧壁处分别提供具有不同流速和组成的处理气体来解决该问题。

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