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1. 发明授权

US5976898A Localization of defects of a metallic layer of a semiconductor circuit 失效
标题翻译：半导体电路的金属层的缺陷的定位
公开(公告)号：US5976898A
公开(公告)日：1999-11-02
申请号：US770476
申请日：1996-12-20
申请人： Michel Marty , Alain Brun
发明人： Michel Marty , Alain Brun
IPC分类号： G01R31/311 , G01R31/26 , H01L21/00 , H01L21/66
CPC分类号： G01R31/311
摘要： A method for locating possible defects on an opaque layer deposited on a production wafer of a semiconductor circuit, consisting in locally radiating an upper surface of the wafer by means of a laser, and detecting the occurrence of a current in a diode constituted by a PN junction placed under the opaque layer to be examined.
摘要翻译：一种用于定位沉积在半导体电路的生产晶片上的不透明层上的可能的缺陷的方法，其包括通过激光局部地辐射晶片的上表面，并且检测由PN构成的二极管中的电流的出现连接处置于待检查的不透明层之下。

2. 发明授权

US08981516B2 Back-side illuminated image sensor provided with a transparent electrode 有权
标题翻译：具有透明电极的背面照明图像传感器
公开(公告)号：US08981516B2
公开(公告)日：2015-03-17
申请号：US13445222
申请日：2012-04-12
申请人： Jens Prima , François Roy , Michel Marty
发明人： Jens Prima , François Roy , Michel Marty
IPC分类号： H01L21/00 , H01L27/146
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/1464 , H01L27/14643
摘要： A back-side illuminated image sensor formed from a thinned semiconductor substrate, wherein: a transparent conductive electrode, insulated from the substrate by an insulating layer, extends over the entire rear surface of the substrate; and conductive regions, insulated from the substrate by an insulating coating, extend perpendicularly from the front surface of the substrate to the electrode.
摘要翻译：一种由薄化的半导体衬底形成的背面照明图像传感器，其中：通过绝缘层与衬底绝缘的透明导电电极在衬底的整个后表面上延伸; 并且通过绝缘涂层与基板绝缘的导电区域从基板的前表面垂直延伸到电极。

3. 发明授权

US08704282B2 Method for forming a back-side illuminated image sensor 有权
标题翻译：用于形成背面照明图像传感器的方法
公开(公告)号：US08704282B2
公开(公告)日：2014-04-22
申请号：US13445013
申请日：2012-04-12
申请人： Michel Marty , François Roy , Jens Prima
发明人： Michel Marty , François Roy , Jens Prima
IPC分类号： H01L31/113 , H01L31/18
CPC分类号： H01L27/14689 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14687
摘要： A method for forming a back-side illuminated image sensor from a semiconductor substrate, including the steps of: a) thinning the substrate from its rear surface; b) depositing, on the rear surface of the thinned substrate, an amorphous silicon layer of same conductivity type as the substrate but of higher doping level; and c) annealing at a temperature enabling to recrystallized the amorphous silicon to stabilize it.
摘要翻译：一种用于从半导体衬底形成背面照明图像传感器的方法，包括以下步骤：a）从其后表面减薄衬底; b）在薄化衬底的后表面上沉积与衬底相同导电类型但具有较高掺杂水平的非晶硅层; 和c）在能够使非晶硅重结晶以使其稳定的温度下进行退火。

4. 发明申请

US20080064174A1 METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT WITH FULLY DEPLETED AND PARTIALLY DEPLETED TRANSISTORS 有权
标题翻译：用完整的部分放置的晶体管制造集成电路的方法
公开(公告)号：US20080064174A1
公开(公告)日：2008-03-13
申请号：US11846622
申请日：2007-08-29
申请人： Philippe Coronel , Michel Marty
发明人： Philippe Coronel , Michel Marty
IPC分类号： H01L21/336
CPC分类号： H01L21/84
摘要： A method for manufacturing an integrated circuit containing fully and partially depleted MOS transistors, including the steps of forming similar MOS transistors on a thin silicon layer formed on a silicon-germanium layer resting on a silicon substrate; attaching the upper surface of the structure to a support wafer; eliminating the substrate; depositing a mask and opening this mask at the locations of the fully-depleted transistors; oxidizing the silicon-germanium at the locations of the fully-depleted transistors in conditions such that a condensation phenomenon occurs; and eliminating the oxidized portion and the silicon-germanium portion, whereby there remain transistors with a thinned silicon layer.
摘要翻译：一种用于制造包含完全和部分耗尽的MOS晶体管的集成电路的方法，包括以下步骤：在沉积在硅衬底上的硅锗层上形成的薄硅层上形成类似的MOS晶体管; 将所述结构的上表面附接到支撑晶片; 消除基板; 在完全耗尽的晶体管的位置处沉积掩模并打开该掩模; 在发生冷凝现象的条件下，在完全耗尽的晶体管的位置氧化硅 - 锗; 并且消除氧化部分和硅 - 锗部分，由此保留具有薄化硅层的晶体管。

5. 发明申请

US20070278469A1 Component containing a baw filter 有权
标题翻译：含有过滤器的组分
公开(公告)号：US20070278469A1
公开(公告)日：2007-12-06
申请号：US11807491
申请日：2007-05-29
申请人： Michel Marty , Jean-Christophe Giraudin , Philippe Coronel
发明人： Michel Marty , Jean-Christophe Giraudin , Philippe Coronel
IPC分类号： H01L47/00 , H01L29/00
CPC分类号： H03H9/0547
摘要： A monolithic assembly of electronic components including a semiconductor substrate, at a first level above the substrate, at least one bulk acoustic wave resonator, at a second level above the resonator, a single-crystal semiconductor layer in which are formed semiconductor components, and recesses under the semiconductor layer portions arranged above the resonators.
摘要翻译：包括半导体衬底的电子部件的单体组件包括在衬底上方的第一级，在谐振器上方的第二级上的至少一个体声波谐振器，形成半导体部件的单晶半导体层，以及凹部在布置在谐振器上方的半导体层部分下方。

6. 发明申请

US20070041680A1 Process for assembling passive and active components and corresponding integrated circuit 审中-公开
标题翻译：用于组装无源和有源组件的过程以及相应的集成电路
公开(公告)号：US20070041680A1
公开(公告)日：2007-02-22
申请号：US11504216
申请日：2006-08-15
申请人： Jean-Christophe Giraudin , Michel Marty
发明人： Jean-Christophe Giraudin , Michel Marty
IPC分类号： G02B6/12 , H01L23/52
CPC分类号： H01L21/6835 , H01L21/2007 , H01L21/8221 , H01L23/5389 , H01L25/16 , H01L27/0688 , H01L2924/0002 , H01L2924/19041 , H01L2924/00
摘要： An integrated circuit includes at least two subassemblies: a first subassembly of active components and a second subassembly of passive components. The second subassembly of passive components is bonded beneath the first subassembly of active components. Interconnects are formed which pass through the first subassembly of active components, and the interconnects extend from the first subassembly of active components to the second subassembly of passive components.
摘要翻译：集成电路包括至少两个子组件：有源部件的第一子组件和无源组件的第二子组件。无源部件的第二子组件被结合在有源部件的第一子组件的下方。形成穿过有源部件的第一子组件的互连件，并且互连从有源部件的第一子组件延伸到无源部件的第二子组件。

7. 发明授权

US07115465B2 Method for manufacturing a bipolar transistor 有权
标题翻译：制造双极晶体管的方法
公开(公告)号：US07115465B2
公开(公告)日：2006-10-03
申请号：US10838860
申请日：2004-05-03
申请人： Michel Marty , Bertrand Martinet , Cyril Fellous
发明人： Michel Marty , Bertrand Martinet , Cyril Fellous
IPC分类号： H01L21/8249
CPC分类号： H01L29/66287 , H01L29/66242
摘要： A method for manufacturing a bipolar transistor, comprising the steps of: growing on the substrate a first semiconductor; depositing an encapsulation layer etchable with respect to the first semiconductor, forming a sacrificial block at the location of the base-emitter junction; exposing the first semiconductor around spacers formed around said block; forming a second semiconductor, then a third semiconductor etchable with respect to the second semiconductor layer, the encapsulation layer, and the spacers, the sum of the thicknesses of the second semiconductor and the sacrificial layer being substantially equal to the sum of the thicknesses of the encapsulation layer and of the sacrificial block; removing the block and the encapsulation layer; depositing a fourth semiconductor; removing the third semiconductor; and etching an insulating layer to maintain it on the emitter walls and between said emitter and the second semiconductor.
摘要翻译：一种制造双极晶体管的方法，包括以下步骤：在衬底上生长第一半导体; 沉积相对于第一半导体可蚀刻的封装层，在基极 - 发射极结的位置处形成牺牲块; 将第一半导体暴露在围绕所述块形成的间隔件周围; 形成第二半导体，然后可蚀刻相对于第二半导体层，封装层和间隔物的第三半导体，第二半导体和牺牲层的厚度之和基本上等于封装层和牺牲块; 去除块和封装层; 沉积第四半导体; 去除第三半导体; 并蚀刻绝缘层以将其保持在发射极壁上和所述发射极与第二半导体之间。

8. 发明申请

US20060118897A1 Semiconductor component comprising a buried mirror 有权
标题翻译：半导体元件包括掩埋反射镜
公开(公告)号：US20060118897A1
公开(公告)日：2006-06-08
申请号：US11297973
申请日：2005-12-08
申请人： Sebastien Jouan , Michel Marty
发明人： Sebastien Jouan , Michel Marty
IPC分类号： H01L21/00 , H01L31/0232
CPC分类号： H01L31/1804 , H01L31/02327 , H01L31/105 , H01L31/1085 , Y02E10/547 , Y02P70/521
摘要： A method for forming a buried mirror in a semiconductor component includes the steps of forming a structure comprising a semiconductor layer laid on an insulating layer covering a substrate; forming one or several openings in the semiconductor layer emerging at the surface of the insulating layer; eliminating a portion of the insulating layer, whereby a recess is formed; forming a second thin insulating layer against the wall of the recess; and forming a metal layer in the recess against the second insulating layer.
摘要翻译：在半导体部件中形成掩模反射镜的方法包括以下步骤：形成包括覆盖在基板上的绝缘层上的半导体层的结构; 在半导体层中形成在绝缘层的表面出现的一个或几个开口; 消除绝缘层的一部分，由此形成凹部; 在所述凹部的壁上形成第二薄绝缘层; 以及在所述凹部中在所述第二绝缘层上形成金属层。

9. 发明申请

US20060054998A1 Bipolar transistor with high dynamic performances 有权
标题翻译：具有高动态性能的双极晶体管
公开(公告)号：US20060054998A1
公开(公告)日：2006-03-16
申请号：US10942165
申请日：2004-09-16
申请人： Alain Chantre , Bertrand Martinet , Michel Marty , Pascal Chevalier
发明人： Alain Chantre , Bertrand Martinet , Michel Marty , Pascal Chevalier
IPC分类号： H01L27/082
CPC分类号： H01L29/66242 , H01L21/8249 , H01L29/0817 , H01L29/36 , H01L29/41708 , H01L29/42304 , H01L29/456 , H01L29/7378
摘要： A novel bipolar transistor with very high dynamic performances, usable in an integrated circuit. This bipolar transistor comprises a single-crystal silicon emitter region with a thickness smaller than 50 nm. The base of the bipolar transistor is made of an SiGe alloy.
摘要翻译：一种具有非常高动态性能的新型双极晶体管，可用于集成电路。该双极晶体管包括厚度小于50nm的单晶硅发射极区域。双极晶体管的基极由SiGe合金制成。

10. 发明授权

US06902970B2 Integrated circuit including, and fabrication method for producing, bipolar and MOSFET transistors 有权
标题翻译：集成电路包括双极晶体管和MOSFET晶体管的制造方法
公开(公告)号：US06902970B2
公开(公告)日：2005-06-07
申请号：US10352376
申请日：2003-01-27
申请人： Michel Marty , Alain Chantre
发明人： Michel Marty , Alain Chantre
IPC分类号： H01L21/8249 , H01L21/8238
CPC分类号： H01L21/8249
摘要： Production of an insulated-gate field-effect transistor is begun and interrupted at an uncompleted point. Then, a bipolar transistor is almost completely produced. At that point, a return is made to the production of the insulated-gate field-effect transistor. Lastly, a finishing step common to both transistors and including common thermal annealing and common siliciding is performed.
摘要翻译：绝缘栅场效应晶体管的制造在未完成的点开始和中断。然后，双极晶体管几乎完全产生。此时，对绝缘栅场效应晶体管的制造进行了回归。最后，执行两个晶体管共同的包括普通热退火和普通硅化的完成步骤。

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