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1. 发明申请

US20070052104A1 Grafted seed layer for electrochemical plating 有权
标题翻译：用于电化学电镀的接枝种子层
公开(公告)号：US20070052104A1
公开(公告)日：2007-03-08
申请号：US11404058
申请日：2006-04-13
申请人： Michael Yang , Aron Rosenfeld , Hooman Hafezi , Zhi-Wen Sun , John Dukovic
发明人： Michael Yang , Aron Rosenfeld , Hooman Hafezi , Zhi-Wen Sun , John Dukovic
IPC分类号： H01L23/48
CPC分类号： H01L23/53238 , H01L21/76855 , H01L21/76873 , H01L2924/0002 , H01L2924/00
摘要： Generally, the process includes depositing a barrier layer and seed layer on a feature formed in a dielectric layer, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects described herein have desirable adhesion properties to a barrier and seed layers formed on a semiconductor substrate and demonstrate enhanced electromigration and stress migration results in the fabricated devices formed on the substrate.
摘要翻译：通常，该方法包括在形成在电介质层中的特征上沉积阻挡层和种子层，执行接枝过程，引发铜层，然后通过使用大量铜填充工艺来填充该特征。根据本文描述的方面形成的铜特征对于形成在半导体衬底上的阻挡层和种子层具有期望的粘合性能，并且证明增强的电迁移和应力迁移导致形成在衬底上的制造器件。

2. 发明授权

US07504335B2 Grafted seed layer for electrochemical plating 有权
标题翻译：用于电化学电镀的接枝种子层
公开(公告)号：US07504335B2
公开(公告)日：2009-03-17
申请号：US11404058
申请日：2006-04-13
申请人： Michael Yang , Aron Rosenfeld , Hooman Hafezi , Zhi-Wen Sun , John Dukovic
发明人： Michael Yang , Aron Rosenfeld , Hooman Hafezi , Zhi-Wen Sun , John Dukovic
IPC分类号： H01L21/44
CPC分类号： H01L23/53238 , H01L21/76855 , H01L21/76873 , H01L2924/0002 , H01L2924/00
摘要： Generally, the process includes depositing a barrier layer and seed layer on a feature formed in a dielectric layer, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects described herein have desirable adhesion properties to a barrier and seed layers formed on a semiconductor substrate and demonstrate enhanced electromigration and stress migration results in the fabricated devices formed on the substrate.
摘要翻译：通常，该方法包括在形成在电介质层中的特征上沉积阻挡层和种子层，执行接枝过程，引发铜层，然后通过使用大量铜填充工艺来填充该特征。根据本文描述的方面形成的铜特征对于形成在半导体衬底上的阻挡层和种子层具有期望的粘附性能，并且证明增强的电迁移和应力迁移导致形成在衬底上的制造器件。

3. 发明申请

US20070125657A1 Method of direct plating of copper on a substrate structure 审中-公开
标题翻译：在基板结构上直接电镀铜的方法
公开(公告)号：US20070125657A1
公开(公告)日：2007-06-07
申请号：US11255368
申请日：2005-10-21
申请人： Zhi-Wen Sun , Renren He , Nicolay Kovarsky , John Dukovic , Aron Rosenfeld , Lei Zhu
发明人： Zhi-Wen Sun , Renren He , Nicolay Kovarsky , John Dukovic , Aron Rosenfeld , Lei Zhu
IPC分类号： C25D5/34 , C25D3/38
CPC分类号： C25D3/38 , C25D5/10 , C25D5/34 , C25D5/54 , H01L21/2885 , H01L21/76846 , H01L21/76868 , H01L21/76873 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The present invention teaches a method for depositing a copper seed layer onto a substrate surface, generally onto a barrier layer. The barrier layer may include a refractory metal and/or a group 8, 9 or 10 metal. The method includes cathodically pre-treating the substrate in an acid-containing solution. The substrate is then placed into a copper solution (pH≧7.0) that includes complexed copper ions and a current or bias is applied across the substrate surface. The complexed copper ions are reduced to deposit a copper seed layer onto the barrier layer. In one aspect, a complex alkaline bath is then used to electrochemically plate a gapfill layer on the substrate surface, followed by overfill in the same bath. In another aspect, an acidic bath ECP gapfill process and overfill process follow the alkaline seed layer process.
摘要翻译：本发明教导了一种将铜籽晶层沉积到基底表面上的方法，通常在阻挡层上。阻挡层可以包括难熔金属和/或第8,9或10族金属。该方法包括在含酸溶液中阴极预处理底物。然后将衬底放入包括络合的铜离子的铜溶液（pH> = 7.0）中，并且在衬底表面上施加电流或偏压。络合的铜离子被还原以将铜籽晶层沉积在阻挡层上。在一个方面，然后使用复杂的碱性浴来电化学地在衬底表面上印刷间隙填充层，然后在相同的浴中过量填充。另一方面，酸性浴ECP间隙填充过程和过度填充过程遵循碱性种子层过程。

4. 发明申请

US20100120191A1 Method of forming front contacts to a silicon solar cell wiithout patterning 失效
标题翻译：在没有图案化的情况下将前触点形成到硅太阳能电池的方法
公开(公告)号：US20100120191A1
公开(公告)日：2010-05-13
申请号：US12291917
申请日：2008-11-13
申请人： Peter Borden , John Dukovic , Li Xu
发明人： Peter Borden , John Dukovic , Li Xu
IPC分类号： H01L31/0232 , C23C14/34 , C25D7/12
CPC分类号： H01L31/02168 , C25D5/02 , C25D7/126 , H01L31/022425 , H01L31/0236 , Y02E10/50
摘要： A method for forming front contacts on a silicon solar cell which includes texture etching the front surface of the solar cell, forming an antireflective layer over the face, diffusing a doping material into the face to form a heavily doped region in valleys formed during the texture-etching of the face, depositing an electrically conductive material on the heavily doped regions in the valleys and annealing the solar cell.
摘要翻译：一种用于在硅太阳能电池上形成前触点的方法，其包括纹理蚀刻太阳能电池的前表面，在该表面上形成抗反射层，将掺杂材料扩散到面中以在纹理中形成的谷中形成重掺杂区域刻蚀表面，在谷中的重掺杂区域上沉积导电材料并退火太阳能电池。

5. 发明申请

US20060017169A1 Electroplated interconnection structures on integrated circuit chips 审中-公开
标题翻译：集成电路芯片上的电镀互连结构
公开(公告)号：US20060017169A1
公开(公告)日：2006-01-26
申请号：US11168559
申请日：2005-06-29
申请人： Panayotis Andricacos , Hariklia Deligianni , John Dukovic , Daniel Edelstein , Wilma Horkans , Chao-Kun Hu , Jeffrey Hurd , Kenneth Rodbell , Cyprian Uzoh , Kwong-Hon Wong
发明人： Panayotis Andricacos , Hariklia Deligianni , John Dukovic , Daniel Edelstein , Wilma Horkans , Chao-Kun Hu , Jeffrey Hurd , Kenneth Rodbell , Cyprian Uzoh , Kwong-Hon Wong
IPC分类号： H01L23/48 , H01L21/44
CPC分类号： C25D3/38 , C25D5/022 , H01L21/2885 , H01L21/76877 , H01L21/76885
摘要： A process is described for the fabrication of submicton interconnect structures for integrated circuit chips. Void-free and seamless conductors are obtained by electroplating Cu from baths that contain additives and are conventionally used to deposit level, bright, ductile, and low-stress Cu metal. The capability of this method to superfill features without leaving voids or seams is unique and superior to that of other deposition approaches. The electromigration resistance of structures making use of CU electroplated in this manner is superior to the electromigration resistance of AlCu structures or structures fabricated using Cu deposited by methods other than electroplating.
摘要翻译：描述了用于集成电路芯片的亚微米互连结构的制造的过程。通过从包含添加剂的浴中电镀Cu获得无空隙和无缝导体，并且通常用于沉积水平，光亮，延展性和低应力Cu金属。这种方法在不留下空隙或接缝的情况下超滤特征的能力是独一无二的，优于其他沉积方法。以这种方式电镀Cu的结构的电迁移阻力优于AlCu结构或使用不是电镀方法沉积的Cu制造的结构的电迁移电阻。

6. 发明授权

US07820472B2 Method of forming front contacts to a silicon solar cell without patterning 失效
标题翻译：在没有图案化的情况下将前触点形成到硅太阳能电池的方法
公开(公告)号：US07820472B2
公开(公告)日：2010-10-26
申请号：US12291917
申请日：2008-11-13
申请人： Peter Borden , John Dukovic , Li Xu
发明人： Peter Borden , John Dukovic , Li Xu
IPC分类号： H01L21/00
CPC分类号： H01L31/02168 , C25D5/02 , C25D7/126 , H01L31/022425 , H01L31/0236 , Y02E10/50
摘要： A method for forming front contacts on a silicon solar cell which includes texture etching the front surface of the solar cell, forming an antireflective layer over the face, diffusing a doping material into the face to form a heavily doped region in valleys formed during the texture-etching of the face, depositing an electrically conductive material on the heavily doped regions in the valleys and annealing the solar cell.
摘要翻译：一种用于在硅太阳能电池上形成前触点的方法，其包括纹理蚀刻太阳能电池的前表面，在该表面上形成抗反射层，将掺杂材料扩散到面中以在纹理中形成的谷中形成重掺杂区域刻蚀表面，在谷中的重掺杂区域上沉积导电材料并退火太阳能电池。

7. 发明申请

US20050284755A1 Substrate support element for an electrochemical plating cell 失效
标题翻译：用于电化学电镀单元的基板支撑元件
公开(公告)号：US20050284755A1
公开(公告)日：2005-12-29
申请号：US10879668
申请日：2004-06-28
申请人： You Wang , Anzhong Chang , John Dukovic
发明人： You Wang , Anzhong Chang , John Dukovic
IPC分类号： C25D5/00 , C25D7/12 , C25D17/06
CPC分类号： H01L21/6723 , C25D17/001 , C25D17/06
摘要： A contact ring for an electrochemical plating system is provided. The contact ring includes an annular substrate supporting member, a plurality of radially positioned conductive substrate contact pins extending from the substrate supporting member, an annular conductive thief element attached to the substrate supporting member, and at least one source of electrical power in electrical communication with the contact pins and the conductive thief element.
摘要翻译：提供了用于电化学电镀系统的接触环。所述接触环包括环形基板支撑构件，从所述基板支撑构件延伸的多个径向定位的导电基板接触销，附接到所述基板支撑构件的环形导电小窃贼元件以及与所述基板支撑构件电连接的至少一个电力源触针和导电小窃贼元件。

8. 发明申请

US20050274620A1 Copper replenishment system for interconnect applications 审中-公开
标题翻译：用于互连应用的铜补充系统
公开(公告)号：US20050274620A1
公开(公告)日：2005-12-15
申请号：US11006051
申请日：2004-12-06
申请人： Nicolay Kovarsky , John Dukovic
发明人： Nicolay Kovarsky , John Dukovic
IPC分类号： C25D3/38 , C25D3/58 , C25D17/00 , C25D21/12 , C25D21/18
CPC分类号： C25D21/18 , C25D3/38 , C25D21/12
摘要： In one example, an apparatus for dispensing copper into a plating solution is provided which includes a cartridge containing an inlet and an outlet and comprising a copper metal source therein, a dosing device containing an oxidizing agent in fluid communication with the inlet, a tank for containing the plating solution in fluid communication with the outlet, a pH electrode adapted to contact the plating solution, and a system controller which receives input from the pH electrode and sends output to the dosing device. In another example, a method for replenishing copper in a plating solution is provided which includes flowing the plating solution from a plating cell to a replenishing system comprising a dosing device and a cartridge, dosing an oxidizing agent from the dosing device to the plating solution, exposing the plating solution to a copper metal source contained in the cartridge, enriching the plating solution with copper ions derived from the copper metal source, and flowing the enriched plating solution to the plating cell.
摘要翻译：在一个示例中，提供了一种用于将铜分配到电镀液中的装置，其包括：包含入口和出口的盒，其中包括铜金属源，含有与入口流体连通的氧化剂的配量装置，包含与出口流体连通的电镀溶液，适于接触电镀溶液的pH电极，以及接收来自pH电极的输入并将输出发送到计量装置的系统控制器。在另一个实例中，提供了一种用于在电镀溶液中补充铜的方法，其包括将电镀液从电镀池流动到包括计量装置和药筒的补充系统，将计量装置的氧化剂计量给电镀溶液，将电镀溶液暴露于盒内所含的铜金属源，用铜金属源的铜离子对电镀溶液进行富集，并使富集的电镀液流到电镀槽。

9. 发明申请

US20050145499A1 Plating of a thin metal seed layer 审中-公开
标题翻译：电镀薄金属种子层
公开(公告)号：US20050145499A1
公开(公告)日：2005-07-07
申请号：US11072473
申请日：2005-03-03
申请人： Nicolay Kovarsky , You Wang , John Dukovic , Ivan Rodriguez
发明人： Nicolay Kovarsky , You Wang , John Dukovic , Ivan Rodriguez
IPC分类号： C25D5/18
CPC分类号： C25D17/10 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/007 , H01L21/2885 , H01L21/76843 , H01L21/76873 , H01L21/76877
摘要： A method and apparatus for plating a metal layer onto a substrate is provided. The plating apparatus includes two or more segments of an anode and an auxiliary electrode. The plating method includes a first stage of plating a thin metal seed uniformly in the center of the substrate and near the edges of the substrate before metal gap filling and bulk metal plating are performed. The thin metal seed is plated on the substrate surface by applying a current pulse provided by a first power supply and a second power supply which are in electrical communication in reverse polarity with one segment of the anode and the auxiliary electrode. Thereafter, gap filling of features is performed by applying a second current pulse where current is provided to all segments of the anode.
摘要翻译：提供了一种用于将金属层电镀到基底上的方法和装置。电镀装置包括阳极和辅助电极的两个或更多个区段。电镀方法包括在执行金属间隙填充和块状金属电镀之前，在基板的中心和基板的边缘附近均匀地电镀薄金属种子的第一阶段。通过施加由与阳极和辅助电极的一个部分相反极性电连通的第一电源和第二电源提供的电流脉冲，将薄金属种子电镀在基板表面上。此后，通过施加第二电流脉冲来执行特征的间隙填充，其中电流被提供给阳极的所有段。

10. 发明申请

US20060102467A1 Current collimation for thin seed and direct plating 审中-公开
标题翻译：目前准种子为薄种子和直接电镀
公开(公告)号：US20060102467A1
公开(公告)日：2006-05-18
申请号：US10988646
申请日：2004-11-15
申请人： Harald Herchen , John Dukovic , Lily Pang
发明人： Harald Herchen , John Dukovic , Lily Pang
IPC分类号： C25C3/16 , C25B9/00 , C25D17/00
CPC分类号： C25D17/008 , C25D7/123 , C25D17/001 , C25D17/007
摘要： A method and apparatus for plating a conductive material onto a substrate is provided. The apparatus includes a fluid processing cell having a fluid basin configured to contain an electrolyte solution and having an opening configured to receive a substrate for processing, an anode assembly positioned in the fluid basin, and a collimator positioned in the fluid basin between the anode assembly and the opening.
摘要翻译：提供了一种用于将导电材料电镀到基底上的方法和装置。该装置包括流体处理池，流体池被配置为容纳电解质溶液，并且具有构造成接收用于处理的基板的开口，定位在流体池中的阳极组件和位于阳极组件之间的流体池中的准直器和开幕。

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