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1. 发明申请

US20060264043A1 Electroless deposition process on a silicon contact 有权
标题翻译：硅触点上的无电沉积工艺
公开(公告)号：US20060264043A1
公开(公告)日：2006-11-23
申请号：US11385043
申请日：2006-03-20
申请人： Michael Stewart , Timothy Weidman , Arulkumar Shanmugasundram , David Eaglesham
发明人： Michael Stewart , Timothy Weidman , Arulkumar Shanmugasundram , David Eaglesham
IPC分类号： H01L21/44
CPC分类号： C23C18/1893 , B82Y30/00 , C23C18/1651 , C23C18/32 , C23C18/34 , H01L21/02063 , H01L21/28518 , H01L21/288 , H01L21/76802 , H01L21/76814 , H01L21/76843 , H01L21/76847 , H01L21/76855 , H01L21/76856 , H01L21/76867 , H01L21/76874 , H01L21/76879 , H01L21/76889
摘要： Embodiments as described herein provide methods for depositing a material on a substrate during electroless deposition processes, as well as compositions of the electroless deposition solutions. In one embodiment, the substrate contains a contact aperture having an exposed silicon contact surface. In another embodiment, the substrate contains a contact aperture having an exposed silicide contact surface. The apertures are filled with a metal contact material by exposing the substrate to an electroless deposition process. The metal contact material may contain a cobalt material, a nickel material, or alloys thereof. Prior to filling the apertures, the substrate may be exposed to a variety of pretreatment processes, such as preclean processes and activations processes. A preclean process may remove organic residues, native oxides, and other contaminants during a wet clean process or a plasma etch process. Embodiments of the process also provide the deposition of additional layers, such as a capping layer.
摘要翻译：本文所述的实施方案提供了在无电沉积工艺期间在基材上沉积材料的方法以及无电沉积溶液的组合物。在一个实施例中，衬底包含具有暴露的硅接触表面的接触孔。在另一个实施例中，衬底包含具有暴露的硅化物接触表面的接触孔。通过将基板暴露于无电镀沉积工艺，用金属接触材料填充孔。金属接触材料可以包含钴材料，镍材料或其合金。在填充孔之前，衬底可以暴露于各种预处理工艺，例如预清洗工艺和激活工艺。预清洗方法可以在湿式清洁工艺或等离子体蚀刻工艺期间去除有机残余物，天然氧化物和其它污染物。该方法的实施方案还提供附加层的沉积，例如覆盖层。

2. 发明申请

US20080121276A1 SELECTIVE ELECTROLESS DEPOSITION FOR SOLAR CELLS 审中-公开
标题翻译：选择性电沉积太阳能电池
公开(公告)号：US20080121276A1
公开(公告)日：2008-05-29
申请号：US11564812
申请日：2006-11-29
申请人： Sergey Lopatin , Arulkumar Shanmugasundram , Robert Z. Bachrach , Charles Gay , David Eaglesham
发明人： Sergey Lopatin , Arulkumar Shanmugasundram , Robert Z. Bachrach , Charles Gay , David Eaglesham
IPC分类号： H01L31/00
CPC分类号： H01L31/022425 , H01L31/022433 , H01L31/02245 , Y02E10/50
摘要： A metal contact structure of a solar cell substrate includes a contact with a conductive layer or a capping layer that is formed using an electroless plating process. The contact may be disposed within a hole formed through the solar cell substrate or on a non-light-receiving surface of the solar cell substrate. The electroless plating process for the conductive layer uses a seed layer that includes an activation layer for electroless plating.
摘要翻译：太阳能电池基板的金属接触结构包括与使用无电解电镀工艺形成的导电层或覆盖层的接触。接触可以设置在通过太阳能电池基板形成的孔内或太阳能电池基板的非光接收表面上。用于导电层的化学镀处理使用包括用于无电镀的活化层的晶种层。

3. 发明申请

US20140106214A1 LAYERED MATERIALS WITH IMPROVED MAGNESIUM INTERCALATION FOR RECHARGEABLE MAGNESIUM ION CELLS 有权
标题翻译：具有改进的可充电镁离子电池的磁性介质的层状材料
公开(公告)号：US20140106214A1
公开(公告)日：2014-04-17
申请号：US13794440
申请日：2013-03-11
申请人： Robert Ellis Doe , Craig Michael Downie , Christopher Fischer , George Hamilton Lane , Dane Morgan , Josh Nevin , Gerbrand Ceder , Kristin Aslaug Persson , David Eaglesham
发明人： Robert Ellis Doe , Craig Michael Downie , Christopher Fischer , George Hamilton Lane , Dane Morgan , Josh Nevin , Gerbrand Ceder , Kristin Aslaug Persson , David Eaglesham
IPC分类号： H01M10/054 , H01M4/583 , H01M4/36
CPC分类号： H01M10/054 , H01M4/366 , H01M4/381 , H01M4/583
摘要： Electrochemical devices which incorporate cathode materials that include layered crystalline compounds for which a structural modification has been achieved which increases the diffusion rate of multi-valent ions into and out of the cathode materials. Examples in which the layer spacing of the layered electrode materials is modified to have a specific spacing range such that the spacing is optimal for diffusion of magnesium ions are presented. An electrochemical cell comprised of a positive intercalation electrode, a negative metal electrode, and a separator impregnated with a nonaqueous electrolyte solution containing multi-valent ions and arranged between the positive electrode and the negative electrode active material is described.
摘要翻译：包含阴极材料的电化学装置，其包括已经实现结构改性的层状结晶化合物，其增加了多价离子进出阴极材料的扩散速率。提出了层状电极材料的层间距被修改为具有特定的间隔范围的实例，使得间隔对于镁离子的扩散是最佳的。描述了由正插层电极，负极金属电极和浸渍有含有多价离子的非水电解质溶液并且布置在正极和负极活性材料之间的隔膜的电化学电池。

4. 发明授权

US08294303B2 Photovoltaic grounding 有权
标题翻译：光伏接地
公开(公告)号：US08294303B2
公开(公告)日：2012-10-23
申请号：US12722315
申请日：2010-03-11
申请人： David Eaglesham , Christopher Thompson , Michael Schenck
发明人： David Eaglesham , Christopher Thompson , Michael Schenck
IPC分类号： H01H71/08
CPC分类号： H01L31/02021 , H02S99/00 , Y02E10/50 , Y10T307/50 , Y10T307/74
摘要： Embodiments disclosed include photovoltaic power systems and methods for manufacturing the same. A photovoltaic power system can include a photovoltaic array, a DC to AC inverter, a positive conductor electrically connecting a positive inverter terminal of the DC to AC inverter to the positive array terminal and a negative conductor electrically connecting a negative inverter terminal of the DC to AC inverter to the negative array terminal, a positive-conductor ground electrically connected by a switch to the positive conductor, and a negative-conductor ground electrically connected by a switch to the negative conductor.
摘要翻译：公开的实施例包括光伏发电系统及其制造方法。光伏发电系统可以包括光伏阵列，直流到交流逆变器，将直流正逆变器端子与交流逆变器电连接到正极端子的正导体以及将直流负逆变器端子电连接到负极的负极 AC逆变器连接到负极端子，通过开关与正导体电连接的正导体地线，以及通过开关与负极导体电连接的负极导体接地。

5. 发明申请

US20090078318A1 Photovoltaic Devices Including An Interfacial Layer 审中-公开
标题翻译：包括界面层的光伏器件
公开(公告)号：US20090078318A1
公开(公告)日：2009-03-26
申请号：US12236730
申请日：2008-09-24
申请人： Peter Meyers , Akhlesh Gupta , David Eaglesham
发明人： Peter Meyers , Akhlesh Gupta , David Eaglesham
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/073 , H01L31/072 , Y02E10/543 , Y02P70/521
摘要： A photovoltaic cell can include an interfacial layer in contact with a semiconductor layer.
摘要翻译：光伏电池可以包括与半导体层接触的界面层。

6. 发明申请

US20070240631A1 Epitaxial growth of compound nitride semiconductor structures 审中-公开
标题翻译：复合氮化物半导体结构的外延生长
公开(公告)号：US20070240631A1
公开(公告)日：2007-10-18
申请号：US11404516
申请日：2006-04-14
申请人： Sandeep Nijhawan , David Bour , Lori Washington , Jacob Smith , Ronald Stevens , David Eaglesham
发明人： Sandeep Nijhawan , David Bour , Lori Washington , Jacob Smith , Ronald Stevens , David Eaglesham
IPC分类号： C30B15/00 , C30B23/00 , G06F7/00 , C30B28/14
CPC分类号： C30B25/14 , C30B29/403 , C30B35/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/67155
摘要： Apparatus and methods are described for fabricating a compound nitride semiconductor structure. Group-III and nitrogen precursors are flowed into a first processing chamber to deposit a first layer over a substrate with a thermal chemical-vapor-deposition process. The substrate is transferred from the first processing chamber to a second processing chamber. Group-III and nitrogen precursors are flowed into the second processing chamber to deposit a second layer over the first layer with a thermal chemical-vapor-deposition process. The first and second group-III precursors have different group-III elements.
摘要翻译：描述了用于制造复合氮化物半导体结构的装置和方法。 III族和氮气前体流入第一处理室，以通过热化学气相沉积工艺在衬底上沉积第一层。衬底从第一处理室转移到第二处理室。 III族和氮气前体流入第二处理室以通过热化学气相沉积工艺在第一层上沉积第二层。第一和第二III族前体具有不同的III族元素。

7. 发明申请

US20070079866A1 System and method for making an improved thin film solar cell interconnect 审中-公开
标题翻译：用于制造改进的薄膜太阳能电池互连的系统和方法
公开(公告)号：US20070079866A1
公开(公告)日：2007-04-12
申请号：US11245620
申请日：2005-10-07
申请人： Peter Borden , David Eaglesham
发明人： Peter Borden , David Eaglesham
IPC分类号： H02N6/00 , H01L31/00
CPC分类号： H01L31/046 , H01L31/0465 , Y02E10/50
摘要： In a module of photovoltaic cells, a method of forming the module interconnects includes a single cutting process after the deposition of all active layers. This simplifies the overall process to a set of vacuum steps followed by a set of interconnect steps, and may significantly module quality and yield. According to another aspect, an interconnect forming method includes self-aligned deposition of an insulator. This simplifies the process because no alignment is required. According to another aspect, an interconnect forming method includes a scribing process that results in a much narrower interconnect which may significantly boost cell efficiency, and allow for narrower cell sizes. According to another aspect, an interconnect includes an insulator layer that greatly reduces shunt current through the active layer, which can greatly improve cell efficiency.
摘要翻译：在光伏电池的模块中，形成模块互连的方法包括在沉积所有有源层之后的单个切割工艺。这将整个过程简化为一组真空步骤，随后是一组互连步骤，并且可以显着地模块质量和产量。根据另一方面，互连形成方法包括绝缘体的自对准沉积。这简化了过程，因为不需要对齐。根据另一方面，互连形成方法包括划线过程，其导致更窄的互连，其可以显着提高电池效率，并且允许更窄的电池尺寸。根据另一方面，互连包括绝缘体层，其大大减少了通过有源层的分流电流，这可以大大提高电池效率。

8. 发明授权

US08951680B2 Rechargeable magnesium ion cell components and assembly 有权
标题翻译：可充电镁离子电池组件和组装
公开(公告)号：US08951680B2
公开(公告)日：2015-02-10
申请号：US13724057
申请日：2012-12-21
申请人： Robert Ellis Doe , Kristin A. Persson , David Eaglesham , Andrew Gmitter
发明人： Robert Ellis Doe , Kristin A. Persson , David Eaglesham , Andrew Gmitter
IPC分类号： H01M4/66 , H01M10/056 , H01M4/13 , H01M10/054
CPC分类号： H01M4/66 , H01M4/13 , H01M4/661 , H01M4/663 , H01M4/667 , H01M10/054 , H01M10/056 , Y02E60/122
摘要： A magnesium battery electrode assembly is described, including a current collector comprising a metal, an overlayer material on the metal and an electrode layer comprising an electrode active material disposed on the current collector. The overlayer material passivates the metal, or inhibits a corrosion reaction that would occur between the metal and an electrolyte in the absence of the overlayer material.
摘要翻译：描述了一种镁电池电极组件，其包括集电器，其包括金属，金属上的覆盖材料和包括设置在集电器上的电极活性材料的电极层。覆盖材料钝化金属，或者抑制在没有覆盖材料的情况下在金属和电解质之间发生的腐蚀反应。

9. 发明申请

US20130260225A1 LAYERED MATERIALS WITH IMPROVED MAGNESIUM INTERCALATION FOR RECHARGEABLE MAGNESIUM ION CELLS 有权
标题翻译：具有改进的可充电镁离子电池的磁性介质的层状材料
公开(公告)号：US20130260225A1
公开(公告)日：2013-10-03
申请号：US13794508
申请日：2013-03-11
申请人： Robert Ellis Doe , Craig Michael Downie , Christopher Fischer , George Hamilton Lane , Dane Morgan , Josh Nevin , Gerbrand Ceder , Kristin Aslaug Persson , David Eaglesham
发明人： Robert Ellis Doe , Craig Michael Downie , Christopher Fischer , George Hamilton Lane , Dane Morgan , Josh Nevin , Gerbrand Ceder , Kristin Aslaug Persson , David Eaglesham
IPC分类号： H01M4/38
CPC分类号： H01M10/054 , H01M4/366 , H01M4/381 , H01M4/583
摘要： Electrochemical devices which incorporate cathode materials that include layered crystalline compounds for which a structural modification has been achieved which increases the diffusion rate of multi-valent ions into and out of the cathode materials. Examples in which the layer spacing of the layered electrode materials is modified to have a specific spacing range such that the spacing is optimal for diffusion of magnesium ions are presented. An electrochemical cell comprised of a positive intercalation electrode, a negative metal electrode, and a separator impregnated with a nonaqueous electrolyte solution containing multi-valent ions and arranged between the positive electrode and the negative electrode active material is described.
摘要翻译：包含阴极材料的电化学装置，其包括已经实现结构改性的层状结晶化合物，其增加了多价离子进出阴极材料的扩散速率。提出了层状电极材料的层间距被修改为具有特定的间隔范围的实例，使得间隔对于镁离子的扩散是最佳的。描述了由正插层电极，负极金属电极和浸渍有含有多价离子的非水电解质溶液并且布置在正极和负极活性材料之间的隔膜的电化学电池。

10. 发明授权

US08525021B2 Photovoltaic devices including heterojunctions 有权
标题翻译：包括异质结的光伏器件
公开(公告)号：US08525021B2
公开(公告)日：2013-09-03
申请号：US12236759
申请日：2008-09-24
申请人： David Eaglesham
发明人： David Eaglesham
IPC分类号： H01L31/00
CPC分类号： H01L31/0336 , H01L31/072 , H01L31/1828 , H01L31/184 , Y02E10/543 , Y02E10/544 , Y02P70/521
摘要： A photovoltaic cell can include a heterojunction between semiconductor layers. The first semiconductor layer can include a III-V compound semiconductor, the first semiconductor layer positioned over a transparent conductive layer. A second semiconductor layer can include a II-VI compound semiconductor, the second semiconductor layer positioned between the first semiconductor layer and a back metal contact.
摘要翻译：光伏电池可以包括半导体层之间的异质结。第一半导体层可以包括III-V族化合物半导体，第一半导体层位于透明导电层之上。第二半导体层可以包括II-VI化合物半导体，第二半导体层位于第一半导体层和背面金属接触之间。

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