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    • 1. 发明授权
    • Yttrium iron garnet disks on gadolinium gallium substrates for microwave
applications
    • 用于微波应用的钆镓衬底上的钇铁石榴石盘
    • US4060448A
    • 1977-11-29
    • US763964
    • 1977-01-28
    • Michael NemiroffHong Jun YueWilliam Russell Schevey
    • Michael NemiroffHong Jun YueWilliam Russell Schevey
    • C04B35/40H01F1/34H01F10/24H01F41/14H01F41/34H01P11/00B44C1/00C03C15/00C23F1/02
    • H01F41/34H01P11/00
    • A process is disclosed for fabricating narrow line-width yttrium iron garnet (YIG) disks suitable for microwave applications. The process comprises forming an epitaxial thin film of yttrium iron garnet, containing from about 0.5 to 1.5 atom percent trivalent lanthanum ions on the dodecahedral sites, on a substrate such as gadolinium gallium garnet (GGG), forming a thin layer of SiO.sub.2 on the YIG film, forming a photoresist mask layer on the SiO.sub.2 layer, removing portions of the photoresist mask layer to expose portions of the underlying SiO.sub.2 layer, removing portions of the SiO.sub.2 layer to expose portions of the underlying YIG layer and removing the exposed portions of the YIG layers to form isolated La:YIG disks supported on the GGG substrate. The substrate is then further processed, as by dicing, to provide individual La:YIG disks for fabrication into microwave devices. Linewidths of about 0.45 Oe are obtained by the process.
    • 公开了用于制造适用于微波应用的窄线宽钇铁石榴石(YIG)盘的方法。 该方法包括在诸如钆镓石榴石(GGG)的基底上形成在十二面体位置上含有约0.5至1.5原子百分数的三价镧离子的钇铁石榴石外延薄膜,在YIG上形成薄层的SiO 2 在SiO 2层上形成光致抗蚀剂掩模层,去除光致抗蚀剂掩模层的部分以暴露下面的SiO 2层的部分,去除SiO 2层的部分以暴露下面的YIG层的部分并除去YIG的暴露部分 层以形成在GGG衬底上支撑的隔离的La:YIG盘。 然后通过切割进一步处理衬底,以提供用于制造成微波器件的单独的La:YIG盘。 通过该方法获得约0.45Oe的线宽。