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    • 3. 发明授权
    • Method of loading instructions into an instruction cache by repetitively
using a routine containing a mispredicted branch instruction
    • 通过重复使用包含错误预测的分支指令的例程将指令加载到指令高速缓存中的方法
    • US5642493A
    • 1997-06-24
    • US345043
    • 1994-11-25
    • Bradley Burgess
    • Bradley Burgess
    • G06F9/38G06F12/08G06F12/06
    • G06F9/3802G06F12/0875G06F9/3846G06F12/0862
    • A method of loading a particular block of instructions into the instruction cache (14) of a Harvard architecture data processor (10) involves repetitively mis-predicting a branch instruction in a loop. The branch instruction is conditioned upon an instruction whose execution is contrived to output a sequential fetch address. However, the instruction's result is not available until after the branch instruction begins executing. Therefore, the data processor speculatively executes or predicts the branch instruction. In this case, the branch instruction predicts that it will branch to the particular block of instructions. The data processor then loads the instructions into its instruction cache. Later, the data processor determines that it mis-predicted the branch instruction, returning to the loop for another iteration.
    • 将特定指令块加载到哈佛架构数据处理器(10)的指令高速缓存(14)中的方法涉及重复地错误地预测循环中的分支指令。 分支指令基于执行被输出以输出顺序取出地址的指令。 但是,在分支指令开始执行之后,指令的结果是不可用的。 因此,数据处理器推测地执行或预测分支指令。 在这种情况下,分支指令预测它将分支到特定的指令块。 然后,数据处理器将指令加载到其指令高速缓存中。 之后,数据处理器确定它错误地预测了分支指令,返回到循环进行另一次迭代。
    • 4. 发明授权
    • Programmable bit cell
    • 可编程位单元
    • US5408428A
    • 1995-04-18
    • US176811
    • 1994-01-03
    • Bradley BurgessJeffrey Slaton
    • Bradley BurgessJeffrey Slaton
    • G11C17/10H01L27/02G11C17/00
    • H01L23/544G11C17/10H01L2223/5444H01L2223/54473H01L27/02H01L2924/0002
    • A mask-programmable read only memory bit cell (16) has a pair of conductive elements for each conductive layer in the integrated device but the last layer (30 and 34, 38 and 42, 46 and 50) and single conductive element in the last layer (54). The first and second elements in the first pair of elements receive a first and a second voltage supply (V.sub.DD and V.sub.GND), respectively. The single element outputs a voltage corresponding to the logic state stored by the bit cell. A plurality of pairs of conductive vias couple particular ones of the elements in each layer to particular ones of the elements in adjacent layers. The logic state stored by the bit cell may be reversed by reversing the connection of any one pair of elements and its associated vias. This makes the bit cell suitable for use in a processor version register.
    • 掩模可编程只读存储器位单元(16)具有用于集成器件中的每个导电层的一对导电元件,但是最后一层(30和34,38,42,46和50)和最后一层中的单个导电元件 层(54)。 第一对元件中的第一和第二元件分别接收第一和第二电压源(VDD和VGND)。 单个元件输出与位单元存储的逻辑状态对应的电压。 多对导电通孔将每个层中的特定元件与相邻层中的特定元件相结合。 由位单元存储的逻辑状态可以通过反转任何一对元件及其相关联的通孔的连接来反转。 这使得位单元适用于处理器版本寄存器。