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1. 发明授权

US5658440A Surface image transfer etching 失效
标题翻译：表面图像转印蚀刻
公开(公告)号：US5658440A
公开(公告)日：1997-08-19
申请号：US553966
申请日：1995-11-06
申请人： Michael K. Templeton , Subhash Gupta
发明人： Michael K. Templeton , Subhash Gupta
IPC分类号： G03F7/40 , H01J37/32 , H01L21/3213 , C23C14/34
CPC分类号： H01J37/32192 , G03F7/40 , H01J37/32678 , H01L21/32137
摘要： A process called surface image transfer etching (SITE) is used to etch patterned photoresist so as to more completely transfer a well-defined pattern formed in the top surface (10a) of a material to the bulk of the material (12). The process uses no mask, but employs only a sputter etching process where the etching rates of surfaces not normal to the ion trajectories are greatly enhanced over the etching rates of surfaces normal to the ion trajectories.
摘要翻译：使用称为表面图像转移蚀刻（SITE）的工艺来蚀刻图案化的光致抗蚀剂，以便将形成在材料的顶表面（10a）中的良好限定的图案更完全地转移到材料（12）的主体上。该方法不使用掩模，而仅使用溅射蚀刻工艺，其中不垂直于离子轨迹的表面的蚀刻速率比垂直于离子轨迹的表面的蚀刻速率大大增强。

2. 发明授权

US5308740A Electrical measurement of sidewall angle 失效
标题翻译：侧壁角度的电气测量
公开(公告)号：US5308740A
公开(公告)日：1994-05-03
申请号：US947242
申请日：1992-09-18
申请人： Michael K. Templeton , Subhash Gupta
发明人： Michael K. Templeton , Subhash Gupta
IPC分类号： G03F7/26 , G03C5/00 , B44C1/22
CPC分类号： G03F7/26
摘要： A method for measuring the sidewall angle of patterned photoresist (16), as well as wall angles of other materials, is provided. The method comprises forming two copies of the patterned photoresist feature for which the sidewall measurement is to be obtained on a conducting substrate (14). The first copy is processed via conventional techniques for linewidth measurement, which consists of a pattern transfer etch of the first copy into the underlying conductive substrate, followed by electrical measurement of the conductor linewidth to yield linewidth 1 (LW1). The second copy is processed such that there is a shape altering etch prior to the pattern transfer etch. A linewidth 2 (LW2) is obtained. The angle is then extracted from the two linewidth measurements.
摘要翻译：提供了用于测量图案化光致抗蚀剂（16）的侧壁角以及其它材料的壁角的方法。该方法包括在导电衬底（14）上形成要获得侧壁测量的图案化光致抗蚀剂特征的两个拷贝。通过用于线宽测量的常规技术来处理第一个拷贝，该技术包括将第一拷贝的图案转移蚀刻到下面的导电衬底中，随后电导体线宽的线性测量以产生线宽1（LW1）。处理第二拷贝使得在图案转移蚀刻之前存在改变蚀刻的形状。得到线宽2（LW2）。然后从两个线宽测量中提取角度。

3. 发明授权

US07452808B2 Method of copper/copper surface bonding using a conducting polymer for application in IC chip bonding 失效
标题翻译：使用导电聚合物铜/铜表面键合方法应用于IC芯片接合
公开(公告)号：US07452808B2
公开(公告)日：2008-11-18
申请号：US10988768
申请日：2004-11-15
申请人： Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Sudijono , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
发明人： Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Sudijono , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
IPC分类号： H01L21/44
CPC分类号： H01L24/13 , H01L24/11 , H01L24/81 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/1147 , H01L2224/1308 , H01L2224/13083 , H01L2224/13147 , H01L2224/1319 , H01L2224/1329 , H01L2224/133 , H01L2224/81801 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2924/15747 , H01L2924/00014 , H01L2224/13099 , H01L2924/00
摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.
摘要翻译：提供了具有暴露的金属端接垫的半导体芯片，以及在其上具有对应的暴露的金属凸块的单独的基板。在暴露的金属端接垫上形成导电聚合物塞。在导电聚合物塞上形成一个符合标准的界面层。半导体芯片的导电聚合物插塞与相应的金属凸块对准。导电聚合物塞上的一致界面层与相应的金属凸块配合。一致的界面层被热分解，粘附和永久地附着导电聚合物塞与相应的金属凸块。还公开了形成和图案化羰基镍层的方法。

4. 发明申请

US20060280698A1 System for treating conditions of the periodontium 审中-公开
标题翻译：治疗牙周膜病变的系统
公开(公告)号：US20060280698A1
公开(公告)日：2006-12-14
申请号：US11152499
申请日：2005-06-14
申请人： Subhash Gupta , Dennis Flanagan
发明人： Subhash Gupta , Dennis Flanagan
IPC分类号： A61K8/96 , A61K36/18
CPC分类号： A61Q11/00 , A61K8/97 , A61K36/18
摘要： A system for treating conditions of the periodontium, such as gingivitis and periodontitis, includes an Ayurvedic medicinal solution and an applicator for delivering the solution to the periodontium. The Ayurvedic medicinal solution utilizes herbal extracts to break-down bacteria which can inflame gum tissue. In one embodiment, the solution comprises approximately 1 gram of triphala extract for every 10 ml of glycerine. In another embodiment, the solution comprises approximately 1 gram of amla extract for every 10 ml of glycerine. The applicator for delivering the solution to the periodontium may either be in the form of a cotton swab-type wand, a pipette or a spray dispenser.
摘要翻译：用于治疗牙周病例如牙龈炎和牙周炎的系统包括阿育吠陀药用溶液和用于将溶液递送到牙周膜的施用器。阿育吠陀药用溶液利用草药提取物分解可以使牙龈组织发炎的细菌。在一个实施方案中，该溶液包含每10ml甘油约1克的三菌属提取物。在另一个实施方案中，该溶液包含每10ml甘油约1克的amla提取物。用于将溶液递送到牙周组织的施用器可以是棉签式棒，移液管或喷雾分配器的形式。

5. 发明授权

US06967162B2 Method of copper/copper surface bonding using a conducting polymer for application in IC chip bonding 有权
公开(公告)号：US06967162B2
公开(公告)日：2005-11-22
申请号：US10988769
申请日：2004-11-15
申请人： Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Sudijono , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
发明人： Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Sudijono , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
IPC分类号： H01L21/44 , H01L21/50 , H01L21/60 , H01L23/48 , H01L23/485 , H01L23/52 , H01L29/40
CPC分类号： H01L24/13 , H01L24/11 , H01L24/81 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/1147 , H01L2224/1308 , H01L2224/13083 , H01L2224/13147 , H01L2224/1319 , H01L2224/1329 , H01L2224/133 , H01L2224/81801 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2924/15747 , H01L2924/00014 , H01L2224/13099 , H01L2924/00
摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.

6. 发明申请

US20050181081A1 Anti-dermatophytic preparation and use thereof 失效
标题翻译：抗皮肤真菌制剂及其用途
公开(公告)号：US20050181081A1
公开(公告)日：2005-08-18
申请号：US10761804
申请日：2004-01-21
申请人： Suman Khanuja , Pushplata Chaturvedi , Anil Singh , Ajit Shasany , Vinay Agarwal , Vivek Gupta , Subhash Gupta , Arun Tripathy , Anirban Pal , Dharmendra Saikia , Mahendra Darokar , Krishna Aggarwal , Ravi Bansal
发明人： Suman Khanuja , Pushplata Chaturvedi , Anil Singh , Ajit Shasany , Vinay Agarwal , Vivek Gupta , Subhash Gupta , Arun Tripathy , Anirban Pal , Dharmendra Saikia , Mahendra Darokar , Krishna Aggarwal , Ravi Bansal
IPC分类号： A61K36/00 , A61K36/534 , A61K36/54 , A61K36/8962 , A61K35/78
CPC分类号： A61K36/54 , A61K36/534 , A61K36/8962 , A61K2300/00
摘要： The present invention provides an improved preparation based on the synergistic action of garlic extract and essential oil of M. spicata var. Ganga or cinnamon oil against dermatophytic fungus. More particularly, the present invention relates to the synergistic enhancement of activity of a combination by menthyl acetate or Geraniol. The invention also provides a method of preparation of the synergistic combination and the shelf life observed to be more than one year. The cream based preparation is a potent anti-dermatophytic as described and illustrated by in vitro and in vivo evaluations.
摘要翻译：本发明提供了一种改进的制剂，其基于大蒜提取物和M.spicata var。的精油的协同作用。甘草或肉桂油抗皮肤真菌。更具体地，本发明涉及通过乙酸薄荷酯或香叶醇组合的协同增强活性。本发明还提供了一种制备协同组合的方法和观察到的一年以上的保质期。基于乳膏的制剂是有效的抗皮肤真菌病，如通过体外和体内评价所描述和说明的。

7. 发明申请

US20050100610A1 Use of bioactive fraction from cow urine distillate ('Go-mutra'} as a bio-enhancer of anti-infective, anti-cancer agents and nutrients 失效
$Use of bioactive fraction from cow urine distillate ('Go-mutra'} as a bio-enhancer of anti-infective, anti-cancer agents and nutrients$
标题翻译：使用来自牛尿馏分（“Go-mutra”）的生物活性成分作为抗感染，抗癌剂和营养物质的生物增强剂
公开(公告)号：US20050100610A1
公开(公告)日：2005-05-12
申请号：US10822790
申请日：2004-04-13
申请人： Suman Khanuja , Sushil Kumar , Ajit Shasany , Jai Arya , Mahendra Darokar , Monika Singh , Prachi Sinha , Soumya Awasthi , Subhash Gupta , Vivek Gupta , Madan Gupta , Ram Verma , Sweta Agarwal , Sunil Mansinghka , Suresh Dawle
发明人： Suman Khanuja , Sushil Kumar , Ajit Shasany , Jai Arya , Mahendra Darokar , Monika Singh , Prachi Sinha , Soumya Awasthi , Subhash Gupta , Vivek Gupta , Madan Gupta , Ram Verma , Sweta Agarwal , Sunil Mansinghka , Suresh Dawle
IPC分类号： A61K35/22 , A61K45/06 , A61P31/00 , A61P35/00 , A61K33/40 , A61K31/4965 , A61K31/4709 , A61K31/496 , A61K31/65
CPC分类号： A61K45/06 , A61K35/22 , A61K2300/00
摘要： The invention relates to a novel pharmaceutical composition comprising an effective amount of bio-active fraction from cow urine distillate as a bioavailability facilitator and pharmaceutically acceptable additives selected from anticancer compounds, antibiotics, drugs, therapeutic and nutraceutic agents, ions and similar molecules which are targeted to the living systems.
摘要翻译：本发明涉及一种新型药物组合物，其包含有效量的来自牛尿馏分的生物活性级分作为生物利用度促进剂和选自抗癌化合物，抗生素，药物，治疗和营养药物，离子和类似分子的药学上可接受的添加剂到生活系统。

8. 发明申请

US20050090102A1 Method of copper/copper surface bonding using a conducting polymer for application in IC chip bonding 有权
标题翻译：使用导电聚合物铜/铜表面键合方法应用于IC芯片接合
公开(公告)号：US20050090102A1
公开(公告)日：2005-04-28
申请号：US10988769
申请日：2004-11-15
申请人： Simon Chooi , Yakub Aliyu , Mei Zhou , John Sudijono , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
发明人： Simon Chooi , Yakub Aliyu , Mei Zhou , John Sudijono , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
IPC分类号： H01L21/44 , H01L21/50 , H01L21/60 , H01L23/48 , H01L23/485 , H01L23/52 , H01L29/40
CPC分类号： H01L24/13 , H01L24/11 , H01L24/81 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/1147 , H01L2224/1308 , H01L2224/13083 , H01L2224/13147 , H01L2224/1319 , H01L2224/1329 , H01L2224/133 , H01L2224/81801 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2924/15747 , H01L2924/00014 , H01L2224/13099 , H01L2924/00
摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.
摘要翻译：提供了具有暴露的金属端接垫的半导体芯片，以及在其上具有对应的暴露的金属凸块的单独的基板。在暴露的金属端接垫上形成导电聚合物塞。在导电聚合物塞上形成一个符合标准的界面层。半导体芯片的导电聚合物插塞与相应的金属凸块对准。导电聚合物塞上的一致界面层与相应的金属凸块配合。一致的界面层被热分解，粘附和永久地附着导电聚合物塞与相应的金属凸块。还公开了形成和图案化羰基镍层的方法。

9. 发明授权

US06531390B2 Non-metallic barrier formations for copper damascene type interconnects 有权
公开(公告)号：US06531390B2
公开(公告)日：2003-03-11
申请号：US09925819
申请日：2001-08-10
申请人： Simon Chooi , Subhash Gupta , Mei-Sheng Zhou , Sangki Hong
发明人： Simon Chooi , Subhash Gupta , Mei-Sheng Zhou , Sangki Hong
IPC分类号： H01L218222
CPC分类号： H01L21/76832 , H01L21/76801 , H01L21/76807 , H01L21/76826 , H01L21/76831
摘要： A method for forming dual-damascene type conducting interconnects with non-metallic barriers that protect said interconnects from fluorine out-diffusion from surrounding low-k, fluorinated dielectric materials. One embodiment of the method is particularly suited for forming such interconnects in microelectronics fabrications of the sub 0.15 micron generation.

10. 发明授权

US06489233B2 Non-metallic barrier formations for copper damascene type interconnects 有权
标题翻译：铜镶嵌型互连的非金属阻挡层
公开(公告)号：US06489233B2
公开(公告)日：2002-12-03
申请号：US09925821
申请日：2001-08-10
申请人： Simon Chooi , Subhash Gupta , Mei-Sheng Zhou , Sangki Hong
发明人： Simon Chooi , Subhash Gupta , Mei-Sheng Zhou , Sangki Hong
IPC分类号： H01L214763
CPC分类号： H01L21/76832 , H01L21/76801 , H01L21/76807 , H01L21/76826 , H01L21/76831
摘要： A method for forming dual-damascene type conducting interconnects with non-metallic barriers that protect said interconnects from fluorine out-diffusion from surrounding low-k, fluorinated dielectric materials. One embodiment of the method is particularly suited for forming such interconnects in microelectronics fabrications of the sub 0.15 micron generation.
摘要翻译：用于形成具有非金属屏障的双镶嵌型导电互连的方法，其保护所述互连免受氟周围的低k，氟化介电材料的氟扩散。该方法的一个实施例特别适用于在0.15微米级的微电子制造中形成这种互连。

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