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    • 6. 发明授权
    • Enhanced silicon all-optical modulator
    • 增强硅全光调制器
    • US08270778B2
    • 2012-09-18
    • US12866666
    • 2010-08-06
    • Michael J. HochbergThomas W. Baehr-Jones
    • Michael J. HochbergThomas W. Baehr-Jones
    • G02F1/035G02F1/295
    • G02F1/025G02F1/2257G02F2001/0152
    • A single-photon absorption all-optical signal-processing device, systems employing the same, and methods of making and using the same. Illustrative examples are provided based on silicon semiconductor technology that employs rectangular waveguides fabricated on SOI wafers. In some embodiments, it is observed that the waveguides have surface state density, σ, of not less than 1.5×1018 cm−1s−1mW−1 to provide a single-photon absorption operation mode. In some embodiments, some portion of the ridge waveguide structure has a surface to volume ratio of at least 18 μm−1, computed using a unit length of 1 μm of the waveguide, with the width and depth dimensions of the waveguide being measured in units of microns.
    • 单光子吸收全光信号处理装置,采用其的系统及其制造和使用方法。 提供了基于在SOI晶片上制造的矩形波导的硅半导体技术的示例性实例。 在一些实施例中,观察到波导具有不小于1.5×1018cm-1s-1mW-1的表面状态密度和sgr,以提供单光子吸收操作模式。 在一些实施例中,脊波导结构的一部分具有至少18μm-1的表面与体积比,使用波导的1μm的单位长度计算,波导的宽度和深度尺寸以单位 的微米。
    • 7. 发明申请
    • ENHANCED SILICON ALL-OPTICAL MODULATOR
    • 增强硅全光调制器
    • US20110164843A1
    • 2011-07-07
    • US12866666
    • 2010-08-06
    • Michael J. HochbergThomas W. Baehr-Jones
    • Michael J. HochbergThomas W. Baehr-Jones
    • G02F1/035
    • G02F1/025G02F1/2257G02F2001/0152
    • A single-photon absorption all-optical signal-processing device, systems employing the same, and methods of making and using the same. Illustrative examples are provided based on silicon semiconductor technology that employs rectangular waveguides fabricated on SOI wafers. In some embodiments, it is observed that the waveguides have surface state density, σ, of not less than 1.5×1018 cm−1s−1mW−1 to provide a single-photon absorption operation mode. In some embodiments, some portion of the ridge waveguide structure has a surface to volume ratio of at least 18 μm−1, computed using a unit length of 1 μm of the waveguide, with the width and depth dimensions of the waveguide being measured in units of microns.
    • 单光子吸收全光信号处理装置,采用其的系统及其制造和使用方法。 提供了基于在SOI晶片上制造的矩形波导的硅半导体技术的示例性实例。 在一些实施例中,观察到波导具有不小于1.5×1018cm-1s-1mW-1的表面状态密度和sgr,以提供单光子吸收操作模式。 在一些实施例中,脊波导结构的一部分具有至少18μm-1的表面与体积比,使用波导的1μm的单位长度计算,波导的宽度和深度尺寸以单位 的微米。