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1. 发明授权

US5557409A Characterization of an external silicon interface using optical second harmonic generation 失效
标题翻译：使用光二次谐波产生的外部硅接口的表征
公开(公告)号：US5557409A
公开(公告)日：1996-09-17
申请号：US322324
申请日：1994-10-13
申请人： Michael Downer , Jerry I. Dadap , John K. Lowell
发明人： Michael Downer , Jerry I. Dadap , John K. Lowell
IPC分类号： G01B11/30
CPC分类号： G01B11/30
摘要： A non-destructive, non-intrusive characterization of angstrom-level roughness characteristics of subsurface interfaces is performed by applying femtosecond light pulses from a laser onto a surface, and analyzing the contents of the reflected pulses. After impinging on the surface being analyzed, the pulses pass through optical filters, which attenuate the fundamental and third harmonic frequencies of the pulses, but keep a substantial portion of the second harmonic. Analysis of the second harmonic signals provides rapid, non-contact, interface-specific characterization of the angstrom-level interfacial microroughness of the subsurface. For semiconductor devices, the second harmonic signals can be used to detect strain, contamination, and trapped charges in the Si/Si(O.sub.2) interface.
摘要翻译：通过将来自激光的飞秒光脉冲施加到表面上，并分析反射脉冲的内容来执行地下界面的埃氏平面粗糙度特性的非破坏性，非侵入性表征。在撞击在被分析的表面上之后，脉冲通过滤光器，这会衰减脉冲的基波和三次谐波频率，但保持二次谐波的很大一部分。二次谐波信号的分析提供了地下水平面微观粗糙度的快速，非接触，界面特异性表征。对于半导体器件，二次谐波信号可用于检测Si / Si（O 2）界面中的应变，污染和俘获电荷。

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