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1. 发明授权

US08349307B2 Polymer conjugates of opioid antagonists 有权
公开(公告)号：US08349307B2
公开(公告)日：2013-01-08
申请号：US12574335
申请日：2009-10-06
申请人： Michael David Bentley , Michael James Roberts , Xiaoming Shen , Lin Cheng
发明人： Michael David Bentley , Michael James Roberts , Xiaoming Shen , Lin Cheng
IPC分类号： A61K31/74
CPC分类号： A61K47/60
摘要： The invention provides polymer conjugates of opioid antagonists comprising a polymer, such as poly(ethylene glycol), covalently attached to an opioid antagonist. The linkage between the polymer and the opioid antagonist is preferably hydrolytically stable. The invention also includes a method of treating one or more side effects associated with the use of opioid analgesics, such as constipation, nausea, or pruritus, by administering a polymer conjugate of the invention.

2. 发明授权

US07056500B2 Polymer conjugates of opioid antagonists 有权
公开(公告)号：US07056500B2
公开(公告)日：2006-06-06
申请号：US10274296
申请日：2002-10-18
申请人： Michael David Bentley , Michael James Roberts , Xiaoming Shen , Lin Cheng
发明人： Michael David Bentley , Michael James Roberts , Xiaoming Shen , Lin Cheng
IPC分类号： A81K31/74
CPC分类号： A61K47/60
摘要： The invention provides polymer conjugates of opioid antagonists comprising a polymer, such as poly(ethylene glycol), covalently attached to an opioid antagonist. The linkage between the polymer and the opioid antagonist is preferably hydrolytically stable. The invention also includes a method of treating one or more side effects associated with the use of opioid analgesics, such as constipation, nausea, or pruritus, by administering a polymer conjugate of the invention.

3. 发明授权

US07662365B2 Polymer conjugates of opioid antagonists 有权
标题翻译：阿片样物质拮抗剂的聚合物共轭物
公开(公告)号：US07662365B2
公开(公告)日：2010-02-16
申请号：US11332964
申请日：2006-01-17
申请人： Michael David Bentley , Michael James Roberts , Xiaoming Shen , Lin Cheng
发明人： Michael David Bentley , Michael James Roberts , Xiaoming Shen , Lin Cheng
IPC分类号： A81K31/74
CPC分类号： A61K47/60
摘要： The invention provides polymer conjugates of opioid antagonists comprising a polymer, such as poly(ethylene glycol), covalently attached to an opioid antagonist. The linkage between the polymer and the opioid antagonist is preferably hydrolytically stable. The invention also includes a method of treating one or more side effects associated with the use of opioid analgesics, such as constipation, nausea, or pruritus, by administering a polymer conjugate of the invention.
摘要翻译：本发明提供了阿片样物质拮抗剂的聚合物缀合物，其包含与阿片样物质拮抗剂共价连接的聚合物，例如聚（乙二醇）。聚合物和阿片样物质拮抗剂之间的连接优选是水解稳定的。本发明还包括通过施用本发明的聚合物缀合物来治疗与使用阿片样镇痛药如便秘，恶心或瘙痒相关的一种或多种副作用的方法。

4. 发明申请

US20100105715A1 POLYMER CONJUGATES OF OPIOID ANTAGONISTS 有权
标题翻译：聚合物对阿片类拮抗剂的结合
公开(公告)号：US20100105715A1
公开(公告)日：2010-04-29
申请号：US12574335
申请日：2009-10-06
申请人： Michael David Bentley , Michael James Roberts , Xiaoming Shen , Lin Cheng
发明人： Michael David Bentley , Michael James Roberts , Xiaoming Shen , Lin Cheng
IPC分类号： A61K31/485 , A61P1/08 , A61P1/10
CPC分类号： A61K47/60
摘要： The invention provides polymer conjugates of opioid antagonists comprising a polymer, such as poly(ethylene glycol), covalently attached to an opioid antagonist. The linkage between the polymer and the opioid antagonist is preferably hydrolytically stable. The invention also includes a method of treating one or more side effects associated with the use of opioid analgesics, such as constipation, nausea, or pruritus, by administering a polymer conjugate of the invention.
摘要翻译：本发明提供了阿片样物质拮抗剂的聚合物缀合物，其包含与阿片样物质拮抗剂共价连接的聚合物，例如聚（乙二醇）。聚合物和阿片样物质拮抗剂之间的连接优选是水解稳定的。本发明还包括通过施用本发明的聚合物缀合物来治疗与使用阿片样镇痛药如便秘，恶心或瘙痒相关的一种或多种副作用的方法。

5. 发明申请

US20060105046A1 Polymer conjugates of opioid antagonists 有权
公开(公告)号：US20060105046A1
公开(公告)日：2006-05-18
申请号：US11332964
申请日：2006-01-17
申请人： Michael Bentley , Michael Roberts , Xiaoming Shen , Lin Cheng
发明人： Michael Bentley , Michael Roberts , Xiaoming Shen , Lin Cheng
IPC分类号： A61K31/485 , A61K9/14
CPC分类号： A61K47/60
摘要： The invention provides polymer conjugates of opioid antagonists comprising a polymer, such as poly(ethylene glycol), covalently attached to an opioid antagonist. The linkage between the polymer and the opioid antagonist is preferably hydrolytically stable. The invention also includes a method of treating one or more side effects associated with the use of opioid analgesics, such as constipation, nausea, or pruritus, by administering a polymer conjugate of the invention.

6. 发明授权

US10736969B2 Multi-arm polymeric prodrug conjugates of pemetrexed-based compounds 有权
公开(公告)号：US10736969B2
公开(公告)日：2020-08-11
申请号：US13995415
申请日：2011-12-21
申请人： Lin Cheng , Jennifer Riggs-Sauthier
发明人： Lin Cheng , Jennifer Riggs-Sauthier
IPC分类号： A61K47/60
摘要： Among other aspects, provided herein are multi-arm polymeric prodrug conjugates of pemetrexed-based compounds. Methods of preparing such conjugates as well as methods of administering the conjugates are also provided. Upon administration to a patient, release of the pemetrexed-based compound is achieved.

7. 发明授权

US10403722B2 Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device 有权
公开(公告)号：US10403722B2
公开(公告)日：2019-09-03
申请号：US13610993
申请日：2012-09-12
申请人： Michael John O'Loughlin , Lin Cheng , Albert Augustus Burk, Jr. , Anant Kumar Agarwal
发明人： Michael John O'Loughlin , Lin Cheng , Albert Augustus Burk, Jr. , Anant Kumar Agarwal
IPC分类号： H01L29/16 , H01L21/02 , H01L21/322 , H01L21/265
摘要： A semiconductor die and a process for fabricating the semiconductor die are disclosed. The semiconductor die has a substrate and a silicon carbide (SiC) epitaxial structure on the substrate. The SiC epitaxial structure includes at least a first N-type SiC layer, at least a first P-type SiC layer, and carbon vacancy reduction material, which has been implanted into a surface of the SiC epitaxial structure. Further, the SiC epitaxial structure has been annealed to mobilize the carbon vacancy reduction material to diffuse carbon atoms substantially throughout the SiC epitaxial structure, thereby increasing an average carrier lifetime in the SiC epitaxial structure.

8. 发明授权

US08722732B2 Oligomer-calcimimetic conjugates and related compounds 有权
标题翻译：低聚物拟钙化偶联物和相关化合物
公开(公告)号：US08722732B2
公开(公告)日：2014-05-13
申请号：US13433100
申请日：2012-03-28
申请人： Jennifer Riggs-Sauthier , Lin Cheng , David Martin
发明人： Jennifer Riggs-Sauthier , Lin Cheng , David Martin
IPC分类号： A61P5/10 , A61K31/137 , A61K31/27 , C07C271/14
CPC分类号： A61K47/48215 , A61K47/60 , C07B2200/11 , C07C211/30 , C07C271/14
摘要： The invention relates to (among other things) oligomer-calcimimetic conjugates and related compounds. A conjugate of the invention, when administered by any of a number of administration routes, exhibits advantages over previously administered compounds.
摘要翻译：本发明涉及（尤其是）低聚物 - 拟拟共轭物和相关化合物。本发明的缀合物当通过任何多种施用途径施用时，显示出优于先前施用的化合物的优点。

9. 发明申请

US20120223330A1 SEMICONDUCTOR DEVICE HAVING HIGH PERFORMANCE CHANNEL 有权
标题翻译：具有高性能通道的半导体器件
公开(公告)号：US20120223330A1
公开(公告)日：2012-09-06
申请号：US13039441
申请日：2011-03-03
申请人： Sarit Dhar , Sei-Hyung Ryu , Lin Cheng , Anant Agarwal
发明人： Sarit Dhar , Sei-Hyung Ryu , Lin Cheng , Anant Agarwal
IPC分类号： H01L29/161 , H01L21/22
CPC分类号： H01L29/107 , H01L21/225 , H01L29/1608 , H01L29/66068 , H01L29/66477 , H01L29/66568
摘要： Semiconductor devices having a high performance channel and method of fabrication thereof are disclosed. Preferably, the semiconductor devices are Metal-Oxide-Semiconductor (MOS) devices, and even more preferably the semiconductor devices are Silicon Carbide (SiC) MOS devices. In one embodiment, a semiconductor device includes a SiC substrate of a first conductivity type, a first well of a second conductivity type, a second well of the second conductivity type, and a surface diffused channel of the second conductivity type formed at the surface of semiconductor device between the first and second wells. A depth and doping concentration of the surface diffused channel are controlled to provide increased carrier mobility for the semiconductor device as compared to the same semiconductor device without the surface diffused channel region when in the on-state while retaining a turn-on, or threshold, voltage that provides normally-off behavior.
摘要翻译：公开了具有高性能通道的半导体器件及其制造方法。优选地，半导体器件是金属氧化物半导体（MOS）器件，并且甚至更优选半导体器件是碳化硅（SiC）MOS器件。在一个实施例中，半导体器件包括第一导电类型的SiC衬底，第二导电类型的第一阱，第二导电类型的第二阱以及形成在第二导电类型的表面处的第二导电类型的表面扩散沟道半导体器件在第一和第二阱之间。控制表面扩散通道的深度和掺杂浓度，以便在处于导通状态同时保持导通状态或阈值时，与没有表面扩散沟道区的相同半导体器件相比，为半导体器件提供增加的载流子迁移率，电压提供常态动作。

10. 发明授权

US07831097B2 System and method for image reconstruction 有权
标题翻译：图像重建系统和方法
公开(公告)号：US07831097B2
公开(公告)日：2010-11-09
申请号：US11682013
申请日：2007-03-05
申请人： Yunqiang Chen , Lin Cheng , Tong Fang , Jason Jenn-Kwei Tyan
发明人： Yunqiang Chen , Lin Cheng , Tong Fang , Jason Jenn-Kwei Tyan
IPC分类号： G06K9/46 , G06K9/00 , G06K9/36
CPC分类号： G01N23/046 , G01N2223/419 , G06T11/006 , G06T2211/421 , G06T2211/424
摘要： A system and method for image reconstruction is disclosed. The method divides iterative image reconstruction into two stages, in the image and Radon space, respectively. In the first stage, filtered back projection and adaptive filtering in the image space are combined to generate a refined reconstructed image of a sinogram residue. This reconstructed image represents an update direction in the image space. In the second stage, the update direction is transformed to the Radon space, and a step size is determined to minimize a difference between the sinogram residue and a Radon transform of the refined reconstructed image of the sinogram residue in the Radon space. These stages are repeated iteratively until the solution converges.
摘要翻译：公开了一种用于图像重建的系统和方法。该方法分别在图像和氡空间中将迭代图像重建分为两个阶段。在第一阶段，滤波反投影和图像空间中的自适应滤波被组合以产生正弦图残差的精细重建图像。该重建图像表示图像空间中的更新方向。在第二阶段中，将更新方向转换为Radon空间，并且确定步长以最小化Radon空间中的正弦图残差的精细重建图像的正弦图残差和Radon变换之间的差异。迭代重复这些阶段，直到解得到收敛。

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