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1. 发明授权

US07724098B2 Gyromagnetic precession oscillator 有权
标题翻译：磁性进动振荡器
公开(公告)号：US07724098B2
公开(公告)日：2010-05-25
申请号：US12192311
申请日：2008-08-15
申请人： Michael C. Scott , Steve E. Calico , David S. Hidinger , Chris E. Williams
发明人： Michael C. Scott , Steve E. Calico , David S. Hidinger , Chris E. Williams
IPC分类号： H03B5/18 , H01P7/04
CPC分类号： H03B5/40
摘要： The present invention is, in one aspect, a radio frequency source, comprising a gyromagnetic precession oscillator. In a second aspect, the gyromagnetic precession oscillator comprises a closed, non-magnetic, cylindrical outer conductor defining a cavity therein; an axial field solenoid wound about the outer conductor; a non-magnetic, cylindrical inner conductor disposed within the cavity and coaxially aligned with the outer conductor; a plurality of cylindrical ferrite precessors, each defining a respective bore through which the inner conductor runs; a plurality of dividers disposed within and defining a resonant chamber in the cavity; and a dielectric material filling the cavity. In a third aspect, the radio frequency source is actively tunable. In a fourth aspect, the radio frequency source that is tunable pulse-to-pulse.
摘要翻译：本发明在一个方面是一种射频源，包括一个回旋振动进动振荡器。在第二方面，回旋振动进动振荡器包括在其中限定空腔的封闭的非磁性的圆柱形外部导体; 围绕外部导体缠绕的轴向磁场电磁阀; 一个非磁性的，圆柱形的内部导体，设置在腔体内并与外部导体同轴对准; 多个圆柱形铁氧体进给器，每个圆柱形铁氧体进给器限定内部导体穿过的孔; 设置在所述空腔内并在所述空腔中限定谐振室的多个分隔件; 以及填充空腔的电介质材料。在第三方面，射频源是可主动调谐的。在第四方面中，可调脉冲脉冲的射频源。

2. 发明申请

US20080304549A1 HYBRID BAND DIRECTED ENERGY TARGET DISRUPTION 有权
标题翻译：混合指带能量目标的破坏
公开(公告)号：US20080304549A1
公开(公告)日：2008-12-11
申请号：US11758455
申请日：2007-06-05
申请人： Steve E. Calico , David S. Hidinger , Michael C. Scott
发明人： Steve E. Calico , David S. Hidinger , Michael C. Scott
IPC分类号： H04B1/00
CPC分类号： H04B1/04 , F41H13/0075 , H04B15/00
摘要： A technique for disrupting the operation of a target containing nonlinear electronic devices generally includes generating a high frequency signal; generating a low frequency signal; modulating the high frequency signal with the low frequency signal; and emitting the modulated high frequency signal at the target.
摘要翻译：一种用于中断包含非线性电子设备的目标的操作的技术通常包括产生高频信号; 产生低频信号; 用低频信号调制高频信号; 并且在目标处发射调制的高频信号。

3. 发明授权

US08564385B2 Coaxial concentric nonlinear transmission line 有权
标题翻译：同轴同心非线性传输线
公开(公告)号：US08564385B2
公开(公告)日：2013-10-22
申请号：US12192290
申请日：2008-08-15
申请人： Michael C. Scott , Steve E. Calico , Chris E. Williams
发明人： Michael C. Scott , Steve E. Calico , Chris E. Williams
IPC分类号： H01P3/00 , H01P3/06
CPC分类号： H01P3/06
摘要： A radio frequency source includes a coaxial non-linear transmission line. The coaxial non-linear transmission line may include a closed, non-magnetic, cylindrical outer conductor defining a cavity therein; and a plurality of stages enclosed by the outer conductor. Each stage may then includes an axial field solenoid wound about the outer conductor; a non-magnetic, cylindrical inner conductor disposed within the cavity and coaxially aligned with the outer conductor; a plurality of cylindrical ferrite switch elements, each defining a respective bore through which the inner conductor runs; and a plurality of inner and outer cups coaxially aligned with the inner and outer conductors, each defining a respective bore through which the inner conductor runs.
摘要翻译：射频源包括同轴非线性传输线。同轴非线性传输线可以包括在其中限定空腔的封闭的，非磁性的圆柱形外部导体; 以及由外导体包围的多个台阶。然后每个阶段可以包括围绕外部导体缠绕的轴向磁场电磁阀; 一个非磁性的，圆柱形的内部导体，设置在腔体内并与外部导体同轴对准; 多个圆柱形铁氧体开关元件，每个圆柱形铁氧体开关元件限定内部导体穿过的相应的孔; 以及与内导体和外导体同轴对准的多个内杯和外杯，每个限定了内导体穿过的孔。

4. 发明申请

US20090051468A1 COAXIAL CONCENTRIC NONLINEAR TRANSMISSION LINE 有权
标题翻译：同轴中心非线性传输线
公开(公告)号：US20090051468A1
公开(公告)日：2009-02-26
申请号：US12192290
申请日：2008-08-15
申请人： Michael C. Scott , Steve E. Calico , Chris E. Williams
发明人： Michael C. Scott , Steve E. Calico , Chris E. Williams
IPC分类号： H01P3/00
CPC分类号： H01P3/06
摘要： A radio frequency source includes a coaxial non-linear transmission line. The coaxial non-linear transmission line may include a closed, non-magnetic, cylindrical outer conductor defining a cavity therein; and a plurality of stages enclosed by the outer conductor. Each stage may then includes an axial field solenoid wound about the outer conductor; a non-magnetic, cylindrical inner conductor disposed within the cavity and coaxially aligned with the outer conductor; a plurality of cylindrical ferrite switch elements, each defining a respective bore through which the inner conductor runs; and a plurality of inner and outer cups coaxially aligned with the inner and outer conductors, each defining a respective bore through which the inner conductor runs.
摘要翻译：射频源包括同轴非线性传输线。同轴非线性传输线可以包括在其中限定空腔的封闭的，非磁性的圆柱形外部导体; 以及由外导体包围的多个台阶。然后每个阶段可以包括围绕外部导体缠绕的轴向磁场电磁阀; 一个非磁性的，圆柱形的内部导体，设置在腔体内并与外部导体同轴对准; 多个圆柱形铁氧体开关元件，每个圆柱形铁氧体开关元件限定内部导体穿过的相应的孔; 以及与内导体和外导体同轴对准的多个内杯和外杯，每个限定了内导体穿过的孔。

5. 发明授权

US08600290B2 Hybrid band directed energy target disruption 有权
标题翻译：混合频带定向能量目标中断
公开(公告)号：US08600290B2
公开(公告)日：2013-12-03
申请号：US11758455
申请日：2007-06-05
申请人： Steve E. Calico , David (Dave) S. Hidinger , Michael C. Scott
发明人： Steve E. Calico , David (Dave) S. Hidinger , Michael C. Scott
IPC分类号： H04K3/00 , H04B1/00
CPC分类号： H04B1/04 , F41H13/0075 , H04B15/00
摘要： A technique for disrupting the operation of a target containing nonlinear electronic devices generally includes generating a high frequency signal; generating a low frequency signal; modulating the high frequency signal with the low frequency signal; and emitting the modulated high frequency signal at the target.
摘要翻译：一种用于中断包含非线性电子设备的目标的操作的技术通常包括产生高频信号; 产生低频信号; 用低频信号调制高频信号; 并且在目标处发射调制的高频信号。

6. 发明授权

US6133050A UV radiation process for making electronic devices having low-leakage-current and low-polarization fatigue 失效
标题翻译：用于制造具有低漏电流和低极化疲劳的电子器件的UV辐射过程
公开(公告)号：US6133050A
公开(公告)日：2000-10-17
申请号：US405885
申请日：1995-03-17
申请人： Masamichi Azuma , Larry D. McMillan , Carlos A. Paz de Araujo , Michael C. Scott
发明人： Masamichi Azuma , Larry D. McMillan , Carlos A. Paz de Araujo , Michael C. Scott
IPC分类号： C30B29/30 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C30B7/00 , C30B29/68 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/3205 , H01L27/108 , H01L27/115 , H01L21/31
CPC分类号： H01L21/31691 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C18/14 , C30B29/68 , C30B7/00 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L28/55
摘要： A precursor solution formed of a liquid polyoxyalkylated metal complex in as solvent is applied to a substrate in the formation of a metal oxide thin film. The liquid thin film is baked in air to a temperature up to 500.degree. C. while UV radiation having a wavelength ranging from 180 nm to 300 nm is applied. The thin film can be twice-baked at increasing temperatures while UV radiation is applied at one or both bakings. The film is then annealed at temperature ranging from about 700.degree. C. to 850.degree. C. to produce a thin-film solid metal oxide product. Alternatively, the UV radiation may be applied to the liquid precursor, the thin film may be annealed with UV radiation, or combinations of such applications of UV radiation to the precursor, to the thin film before or after baking, and/or UV annealing may be used. The use of UV radiation significantly reduces the leakage current and carbon impurity content of the final metal oxide.
摘要翻译：将作为溶剂的液态聚氧化烷基化金属络合物形成的前体溶液施加到基板上，形成金属氧化物薄膜。将液体薄膜在空气中烘烤至高达500℃的温度，同时施加波长为180nm至300nm的UV辐射。该薄膜可以在增加的温度下进行两次烘烤，同时在一个或两个烘烤处施加UV辐射。然后将膜在约700℃至850℃的温度范围内退火，以产生薄膜固体金属氧化物产物。或者，可以将UV辐射施加到液体前体，该薄膜可以在紫外辐射或UV辐射的这种应用的组合与前体之间或在烘烤之前或之后对薄膜进行退火，和/或UV退火使用。使用紫外线辐射显着降低了最终金属氧化物的漏电流和碳杂质含量。

7. 发明授权

US5814849A Thin films of ABO.sub.3 with excess B-site modifiers and method of fabricating integrated circuits with same 失效
标题翻译：具有过量B位修饰剂的ABO3薄膜及其制造集成电路的方法
公开(公告)号：US5814849A
公开(公告)日：1998-09-29
申请号：US788229
申请日：1997-01-27
申请人： Masamichi Azuma , Carlos A. Paz De Araujo , Michael C. Scott
发明人： Masamichi Azuma , Carlos A. Paz De Araujo , Michael C. Scott
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H01L29/76
CPC分类号： C04B35/4682 , C04B35/47 , C04B35/6264 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1275 , C23C18/1295 , C23C18/14 , C30B29/68 , C30B7/00 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , C04B2235/32 , C04B2235/3201 , C04B2235/3203 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3217 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3234 , C04B2235/3241 , C04B2235/3243 , C04B2235/3251 , C04B2235/3262 , C04B2235/3268 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/3289 , C04B2235/441 , C04B2235/449 , C04B2235/6585 , C04B2235/72 , C04B2235/79 , H01L28/55
摘要： A method for fabricating an integrated circuit capacitor having a dielectric layer comprising BST with excess B-site material, such as titanium, added. A polyoxyalkylated metal liquid precursor solution is prepared comprising a stock solution of BST of greater then 99.999% purity blended with excess B-site material such as titanium such that the titanium is in the range of 0-100 mol %. A xylene exchange is then performed to adjust the viscosity of the solution for spin-on application to a substrate. The precursor is spun on a first electrode, dried at 400.degree. C. for 2 minutes, then annealed at 650.degree. C. to 800.degree. C. for about an hour to form a layer of BST with excess titanium. A second electrode is deposited, patterned, and annealed at between 650.degree. C. to 800.degree. C. for about 30 minutes. The resultant capacitor exhibits an enlarged dielectric constant with only a small increase in leakage current.
摘要翻译：一种制造集成电路电容器的方法，该集成电路电容器具有包含BST的介电层，该BST具有过量的B位材料，例如钛。制备聚氧化烷基化金属液体前体溶液，其包含与过量的B位材料如钛混合的大于99.999％纯度的BST的储备溶液，使得钛在0-100摩尔％的范围内。然后进行二甲苯交换以调节溶液的粘度，以便旋涂到基底上。将前体在第一电极上旋转，在400℃下干燥2分钟，然后在650℃至800℃退火约1小时，以形成具有过量钛的BST层。在650℃至800℃下沉积，图案化和退火第二电极约30分钟。所得到的电容器的介电常数增大，泄漏电流只有小的增加。

8. 发明授权

US5690727A Thin films of ABO.sub.3 with excess B-site modifiers and method of fabricating integrated circuits with same 失效
标题翻译：具有过量B位修饰剂的ABO3薄膜及其制造集成电路的方法
公开(公告)号：US5690727A
公开(公告)日：1997-11-25
申请号：US789469
申请日：1997-01-27
申请人： Masamichi Azuma , Carlos A. Paz de Araujo , Michael C. Scott
发明人： Masamichi Azuma , Carlos A. Paz de Araujo , Michael C. Scott
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , C04B35/46 , C07F3/00 , C07F7/28
CPC分类号： C04B35/4682 , C04B35/47 , C04B35/6264 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1275 , C23C18/1295 , C23C18/14 , C30B29/68 , C30B7/00 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , C04B2235/32 , C04B2235/3201 , C04B2235/3203 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3217 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3234 , C04B2235/3241 , C04B2235/3243 , C04B2235/3251 , C04B2235/3262 , C04B2235/3268 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/3289 , C04B2235/441 , C04B2235/449 , C04B2235/6585 , C04B2235/72 , C04B2235/79 , H01L28/55
摘要： A method for fabricating an integrated circuit capacitor having a dielectric layer comprising BST with excess B-site material, such as titanium, added. A polyoxyalkylated metal liquid precursor solution is prepared comprising a stock solution of BST of greater then 99.999% purity blended with excess B-site material such as titanium such that the titanium is in the range of 0-100 mol %. A xylene exchange is then performed to adjust the viscosity of the solution for spin-on application to a substrate. The precursor is spun on a first electrode, dried at 400.degree. C. for 2 minutes, then annealed at 650.degree. C. to 800.degree. C. for about an hour to form a layer of BST with excess titanium. A second electrode is deposited, patterned, and annealed at between 650.degree. C. to 800.degree. C. for about 30 minutes. The resultant capacitor exhibits an enlarged dielectric constant with only a small increase in leakage current.
摘要翻译：一种制造集成电路电容器的方法，该集成电路电容器具有包含BST的介电层，该BST具有过量的B位材料，例如钛。制备聚氧化烷基化金属液体前体溶液，其包含与过量的B位材料如钛混合的大于99.999％纯度的BST的储备溶液，使得钛在0-100摩尔％的范围内。然后进行二甲苯交换以调节溶液的粘度，以便旋涂到基底上。将前体在第一电极上旋转，在400℃下干燥2分钟，然后在650℃至800℃退火约1小时，以形成具有过量钛的BST层。在650℃至800℃下沉积，图案化和退火第二电极约30分钟。所得到的电容器的介电常数增大，泄漏电流只有小的增加。

9. 发明授权

US5601869A Metal polyoxyalkylated precursor solutions in an octane solvent and method of making the same 失效
标题翻译：金属聚氧烷基化前体溶液在辛烷溶剂中及其制备方法
公开(公告)号：US5601869A
公开(公告)日：1997-02-11
申请号：US478399
申请日：1995-06-07
申请人： Michael C. Scott , Carlos A. Paz de Araujo
发明人： Michael C. Scott , Carlos A. Paz de Araujo
IPC分类号： C23C18/12 , C30B7/00 , H01C7/10 , H01C7/112 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , B05D5/12
CPC分类号： C30B7/00 , C23C16/45561 , C23C18/1216 , C23C18/1225 , C30B29/68 , C30B7/005 , H01C7/1013 , H01C7/112 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/55
摘要： A liquid precursor solution for use according to a method of manufacturing metal oxide electronic components includes a polyoxyalkylated metal complex dispersed in an alkane solvent. The alkane solvent is preferably n-octane.
摘要翻译：根据制造金属氧化物电子部件的方法使用的液体前体溶液包括分散在烷烃溶剂中的聚氧化烷基化金属络合物。烷烃溶剂优选为正辛烷。

10. 发明授权

US5508226A Low temperature process for fabricating layered superlattice materialsand making electronic devices including same 失效
标题翻译：用于制造分层超晶格材料的低温工艺和制造包括其的电子器件
公开(公告)号：US5508226A
公开(公告)日：1996-04-16
申请号：US407760
申请日：1995-03-21
申请人： Takeshi Ito , Carlos A. Paz de Araujo , Hitoshi Watanabe , Michael C. Scott
发明人： Takeshi Ito , Carlos A. Paz de Araujo , Hitoshi Watanabe , Michael C. Scott
IPC分类号： H01L21/28 , C23C18/12 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108 , H01L27/115 , H01L29/15
CPC分类号： C23C18/1295 , C23C16/45561 , C23C18/1216 , C23C18/1225 , C30B29/68 , C30B7/00 , C30B7/005 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L28/55
摘要： A liquid precursor containing a metal is applied to a first electrode, RTP baked at a temperature of 700.degree. C., and annealed at the same temperature for from 3 to 5 hours to form a layered superlattice material. A second electrode is formed to form a capacitor, and a second anneal is performed at a temperature of 700.degree. C. If the material is strontium bismuth tantalate, the precursor contains u mole-equivalents of strontium, v mole-equivalents of bismuth, and w mole-equivalents of tantalum, where 0.8.ltoreq.u.ltoreq.1.0, 2.0 v.ltoreq.2.3, and 1.9.ltoreq.w.ltoreq.2.1.
摘要翻译：将包含金属的液体前体施加到第一电极，RTP在700℃的温度下烘烤，并在相同温度下退火3至5小时以形成层状超晶格材料。形成第二电极以形成电容器，并且在700℃的温度下进行第二次退火。如果该材料是钽酸铋锶，则该前体包含铀的锶摩尔当量，铋的摩尔当量铋和 w摩尔当量的钽，其中0.8≤i≤2.0v≤2.3和1.9≤w≤2.1。

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