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    • 1. 发明授权
    • Light emitting device and transistor
    • 发光元件和晶体管
    • US06829278B1
    • 2004-12-07
    • US09445991
    • 1999-12-17
    • Michael B AllensonStephen G AylingDavid R Wight
    • Michael B AllensonStephen G AylingDavid R Wight
    • H01S500
    • H01S5/4025H01S5/02276H01S5/0262H01S5/4018
    • A light emitting device for generating at least one beam of output radiation from an input current of electrons comprises at least two p-n junction devices for converting the input current of electrons into photons, wherein the p-n junction devices are electrically connected in series such that the input impedance of the light emitting device is substantially equal to the sum of the individual impedance of the p-n junction devices. Hence the quantum efficiency of the light emitting device is substantially equal to the sum of the individual quantum efficiencies of the p-n junction devices. In a preferred embodiment, the light emitting device comprises a plurality of p-n junction devices connected in series such that the input impedance of the light emitting device is equal to 50 &OHgr; without the need for additional circuitry or impedance matching elements. The device may therefore have a 50 &OHgr; impedance over a broad frequency band, limited by the modulation frequency limit of the individual p-n junctions. Typically, the p-n junctions may be AlGaAs, AlGaInP, AlGaInAs or AlGaInAsp laser diode devices. The invention also relates to an optically coupled bipolar transistor device.
    • 用于从电子的输入电流产生至少一束输出辐射的发光器件包括用于将电子的输入电流转换成光子的至少两个pn结器件,其中pn结器件串联电连接,使得输入 发光器件的阻抗基本上等于pn结器件的单独阻抗的总和。 因此,发光器件的量子效率基本上等于p-n结器件的各个量子效率之和。 在优选实施例中,发光器件包括串联连接的多个p-n结器件,使得发光器件的输入阻抗等于50Ω,而不需要额外的电路或阻抗匹配元件。 因此,器件可能在宽频带上具有50Ω的阻抗,受到各个p-n结的调制频率限制的限制。 通常,p-n结可以是AlGaAs,AlGaInP,AlGaInAs或AlGaInAsp激光二极管器件。 本发明还涉及一种光耦合双极晶体管器件。