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1. 发明授权

US08710533B2 Multicolored light converting LED with minimal absorption 失效
标题翻译：多彩多姿的光转换LED具有最小的吸收
公开(公告)号：US08710533B2
公开(公告)日：2014-04-29
申请号：US13701145
申请日：2011-05-31
申请人： Michael A. Haase , Junqing Xie , Thomas J. Miller , Xiaoguang Sun
发明人： Michael A. Haase , Junqing Xie , Thomas J. Miller , Xiaoguang Sun
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L25/0756 , H01L33/50 , H01L2924/0002 , H01L2924/00
摘要： Light emitting systems are disclosed. More particularly light emitting systems that utilize wavelength converting semiconductor layer stacks, and preferred amounts of potential well types in such stacks to achieve more optimal performance are disclosed.
摘要翻译：公开了发光系统。更具体地，公开了利用波长转换半导体层堆叠的发光系统以及这种堆叠中的优选量的潜在阱类型以实现更优化的性能。

2. 发明申请

US20130075775A1 Multicolored Light Converting LED With Minimal Absorption 失效
标题翻译：多彩多姿的光转换LED具有最小的吸收
公开(公告)号：US20130075775A1
公开(公告)日：2013-03-28
申请号：US13701145
申请日：2011-05-31
申请人： Michael A. Haase , Junqing Xie , Thomas J. Miller , Xiaoguang Sun
发明人： Michael A. Haase , Junqing Xie , Thomas J. Miller , Xiaoguang Sun
IPC分类号： H01L33/08
CPC分类号： H01L33/08 , H01L25/0756 , H01L33/50 , H01L2924/0002 , H01L2924/00
摘要： Light emitting systems are disclosed. More particularly light emitting systems that utilize wavelength converting semiconductor layer stacks, and preferred amounts of potential well types in such stacks to achieve more optimal performance are disclosed
摘要翻译：公开了发光系统。更具体地，公开了利用波长转换半导体层堆叠的发光系统以及这些堆叠中的优选量的潜在阱类型以获得更优化的性能

3. 发明申请

US20130069038A1 LIGHT CONVERTING AND EMITTING DEVICE WITH SUPPRESSED DARK-LINE DEFECTS 有权
标题翻译：具有抑制性暗线缺陷的光转换和发光装置
公开(公告)号：US20130069038A1
公开(公告)日：2013-03-21
申请号：US13698384
申请日：2011-05-31
申请人： Michael A. Haase , Thomas J. Miller , Terry L. Smith , Xiaoguang Sun , Junqing Xie
发明人： Michael A. Haase , Thomas J. Miller , Terry L. Smith , Xiaoguang Sun , Junqing Xie
IPC分类号： H01L33/50
CPC分类号： H01L33/504 , H01L21/02477 , H01L21/0256 , H01L21/02568 , H01L33/08 , H01L33/50
摘要： Light emitting systems are described. Particularly, light emitting systems and light converting components utilized within these systems are described. The light emitting system and components are formed such that dark-line defects do not interfere with the light emitting system efficiency.
摘要翻译：描述发光系统。特别地，描述了在这些系统中使用的发光系统和光转换组件。发光系统和部件形成为使得暗线缺陷不会影响发光系统的效率。

4. 发明授权

US09431584B2 Light converting and emitting device with suppressed dark-line defects 有权
标题翻译：具有抑制黑线缺陷的光转换和发射装置
公开(公告)号：US09431584B2
公开(公告)日：2016-08-30
申请号：US13698384
申请日：2011-05-31
申请人： Michael A. Haase , Thomas J. Miller , Terry L. Smith , Xiaoguang Sun , Junqing Xie
发明人： Michael A. Haase , Thomas J. Miller , Terry L. Smith , Xiaoguang Sun , Junqing Xie
IPC分类号： H01L33/50 , H01L33/08 , H01L21/02
CPC分类号： H01L33/504 , H01L21/02477 , H01L21/0256 , H01L21/02568 , H01L33/08 , H01L33/50
摘要： Light emitting systems are described. Particularly, light emitting systems and light converting components utilized within these systems are described. The light emitting system and components are formed such that dark-line defects do not interfere with the light emitting system efficiency.
摘要翻译：描述发光系统。特别地，描述了在这些系统中使用的发光系统和光转换组件。发光系统和部件形成为使得暗线缺陷不会影响发光系统的效率。

5. 发明授权

US07700939B2 Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission 失效
标题翻译：适应短波长的LED用于多色，宽带或“白色”发射
公开(公告)号：US07700939B2
公开(公告)日：2010-04-20
申请号：US12174087
申请日：2008-07-16
申请人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
IPC分类号： H01L29/06
CPC分类号： H01L33/08 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/14 , H01L2224/05541 , H01L2224/05005
摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.
摘要翻译：提供了一种适配的LED，其包括短波长LED和再发射半导体结构，其中再发射半导体结构包括不位于pn结内的至少一个势阱。势阱通常是量子阱。适配的LED可以是白色或近白色的LED灯。再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。此外，提供了包括根据本发明的适配LED的图形显示装置和照明装置。

6. 发明授权

US07119377B2 II-VI/III-V layered construction on InP substrate 有权
标题翻译： InP衬底上的II-VI / III-V分层结构
公开(公告)号：US07119377B2
公开(公告)日：2006-10-10
申请号：US11275237
申请日：2005-12-20
申请人： Xiaoguang Sun , Thomas J. Miller , Michael A. Haase
发明人： Xiaoguang Sun , Thomas J. Miller , Michael A. Haase
IPC分类号： H01L33/00
CPC分类号： H01L31/1032 , H01L31/0296 , H01L31/03046 , H01L31/1035 , H01L33/10 , H01S5/183 , Y02E10/544
摘要： A layered construction is provided comprising an InP substrate and alternating layers of II-VI and III-V materials. The alternating layers of II-VI and III-V materials are typically lattice-matched or pseudomorphic to the InP substrate. Typically the II-VI material is selected from the group consisting of ZnSe, CdSe, BeSe, MgSe, ZnTe, CdTe, BeTe, MgTe, ZnS, CdS, BeS, MgS and alloys thereof, more typically selected from the group consisting of CdZnSe, CdMgZnSe, BeZnTe, and BeMgZnTe alloys, and is most typically CdxZn1−xSe where x is between 0.47 and 0.57. Typically the III-V material is selected from the group consisting of InAs, AlAs, GaAs, InP, AlP, GaP, InSb, AlSb, GaSb, and alloys thereof, more typically selected from the group consisting of InP, InAlAs, GaInAs, AlInGaAs and GaInAsP alloys, and is most typically InP or InyAl1−yAs where y is between 0.47 and 0.57. In one embodiment, the layered construction forms one or more distributed Bragg reflectors (DBR's). In another aspect, the present invention provides a layered construction comprising: an InP substrate and a distributed Bragg reflector (DBR) having a reflectivity of 95% or greater which comprises no more than 15 layer pairs of epitaxial semiconductor materials. In another aspect, the present invention provides a laser comprising a layered construction according to the present invention. In another aspect, the present invention provides a photodetector comprising a layered construction according to the present invention.
摘要翻译：提供了包括InP衬底和II-VI和III-V材料的交替层的分层结构。 II-VI和III-V材料的交替层通常与InP衬底晶格匹配或伪构。通常，II-VI材料选自ZnSe，CdSe，BeSe，MgSe，ZnTe，CdTe，BeTe，MgTe，ZnS，CdS，BeS，MgS及其合金，更典型地选自CdZnSe， CdMgZnSe，BeZnTe和BeMgZnTe合金，并且最典型的是Cd x 1-x Se Se，其中x在0.47和0.57之间。通常，III-V材料选自InAs，AlAs，GaAs，InP，AlP，GaP，InSb，AlSb，GaSb及其合金，更典型地选自InP，InAlAs，GaInAs，AlInGaAs 和GaInAsP合金，并且最典型地是InP或In y y 1 y y，其中y在0.47和0.57之间。在一个实施例中，分层结构形成一个或多个分布式布拉格反射器（DBR）。另一方面，本发明提供了一种分层结构，其包括：InP衬底和具有95％或更大的反射率的分布式布拉格反射器（DBR），其包括不超过15层的外延半导体材料。另一方面，本发明提供一种包括根据本发明的分层结构的激光器。另一方面，本发明提供了一种包括根据本发明的分层结构的光电检测器。

7. 发明授权

US08488641B2 II-VI MQW VSEL on a heat sink optically pumped by a GaN LD 失效
标题翻译： II-VI MQW VSEL在由GaN LD光学泵浦的散热器上
公开(公告)号：US08488641B2
公开(公告)日：2013-07-16
申请号：US13060554
申请日：2009-08-18
申请人： Michael A. Haase , Thomas J. Miller , Xiaoguang Sun
发明人： Michael A. Haase , Thomas J. Miller , Xiaoguang Sun
IPC分类号： H01S3/14 , H01S5/00
CPC分类号： H01S5/041 , B82Y20/00 , H01S5/0215 , H01S5/0217 , H01S5/024 , H01S5/1039 , H01S5/14 , H01S5/18308 , H01S5/2009 , H01S5/2022 , H01S5/2027 , H01S5/309 , H01S5/347 , H01S5/423 , H01S2301/18
摘要： Light sources are disclosed. A disclosed light source includes a III-V based pump light source (170) that includes nitrogen and emits light at a first wavelength. The light source further includes a vertical cavity surface emitting laser (VCSEL) that converts at least a portion of the first wavelength light (174) emitted by the pump light source (170) to at least a partially coherent light at a second wavelength (176). The VCSEL includes first and second mirrors (120, 160) that form an optical cavity for light at the second wavelength. The first mirror (120) is substantially reflective at the second wavelength and includes a first multilayer stack. The second mirror (160) is substantially transmissive at the first wavelength and partially reflective and partially transmissive and the second wavelength. The second mirror includes a second multilayer stack. The VCSEL further includes a semiconductor multilayer stack (130) that is disposed between the first and second mirrors and converts at least a portion of the first wavelength light to the second wavelength light. The semiconductor multilayer stack (130) includes a quantum well that includes a Cd(Mg)ZnSe alloy.
摘要翻译：公开了光源。所公开的光源包括包含氮并发射第一波长的光的基于III-V的泵浦光源（170）。光源还包括垂直腔表面发射激光器（VCSEL），其将由泵浦光源（170）发射的第一波长光（174）的至少一部分转换成第二波长的至少部分相干光（176 ）。 VCSEL包括为第二波长的光形成光腔的第一和第二反射镜（120,160）。第一反射镜（120）在第二波长处基本上是反射性的并且包括第一多层叠层。第二反射镜（160）在第一波长处基本上是透射的，并且在第二波长处是部分反射和部分透射的。第二反射镜包括第二多层叠层。 VCSEL还包括设置在第一和第二反射镜之间并将第一波长光的至少一部分转换成第二波长光的半导体多层堆叠（130）。半导体多层堆叠（130）包括包含Cd（Mg）ZnSe合金的量子阱。

8. 发明申请

US20120037957A1 SEMICONDUCTOR DEVICES GROWN ON INDIUM-CONTAINING SUBSTRATES UTILIZING INDIUM DEPLETION MECHANISMS 有权
标题翻译：使用印刷机构的含有底物的底物上的半导体器件
公开(公告)号：US20120037957A1
公开(公告)日：2012-02-16
申请号：US13264509
申请日：2010-04-30
申请人： Thomas J. Miller , Michael A. Haase , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Xiaoguang Sun
IPC分类号： H01L29/06 , H01L29/22
CPC分类号： H01L33/0087 , H01L21/02392 , H01L21/02463 , H01L21/02466 , H01L21/02469 , H01L21/0256 , H01L21/02568 , H01L21/02576 , H01L21/02631 , H01L33/08 , H01L33/28 , H01L33/502
摘要： We have observed anomalous behavior of II-VI semiconductor devices grown on certain semiconductor substrates, and have determined that the anomalous behavior is likely the result of indium atoms from the substrate migrating into the II-V layers during growth. The indium can thus become an unintended dopant in one or more of the II-VI layers grown on the substrate, particularly layers that are close to the growth substrate, and can detrimentally impact device performance. We describe a variety of semiconductor constructions and techniques effective to deplete the migrating indium within a short distance in the growth layers, or to substantially prevent indium from migrating out of the substrate, or to otherwise substantially isolate functional II-VI layers from the migrating indium, so as to maintain good device performance.
摘要翻译：我们已经观察到在某些半导体衬底上生长的II-VI半导体器件的异常行为，并且已经确定异常行为可能是在生长期间从衬底中的铟原子迁移到II-V层的结果。因此，铟可以成为在衬底上生长的一个或多个II-VI层中的非预期掺杂剂，特别是靠近生长衬底的层，并且可能不利地影响器件性能。我们描述了在生长层中短时间内有效去除迁移铟的各种半导体结构和技术，或者基本上防止铟从衬底迁移出来，或以其他方式实质上将功能性II-VI层与迁移铟，以保持良好的设备性能。

9. 发明申请

US20100155694A1 ADAPTING SHORT-WAVELENGTH LED'S FOR POLYCHROMATIC, BROADBAND, OR "WHITE" EMISSION 有权
标题翻译：适应短波长LED，用于多色，宽带或“白色”排放
公开(公告)号：US20100155694A1
公开(公告)日：2010-06-24
申请号：US12715957
申请日：2010-03-02
申请人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
IPC分类号： H01L33/04
CPC分类号： H01L33/08 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/14 , H01L2224/05541 , H01L2224/05005
摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.
摘要翻译：提供了一种适配的LED，其包括短波长LED和再发射半导体结构，其中再发射半导体结构包括不位于pn结内的至少一个势阱。势阱通常是量子阱。适配的LED可以是白色或近白色的LED灯。再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。此外，提供了包括根据本发明的适配LED的图形显示装置和照明装置。

10. 发明申请

US20080272387A1 ADAPTING SHORT-WAVELENGTH LED'S FOR POLYCHROMATIC, BROADBAND, OR "WHITE" EMISSION 失效
标题翻译：适应短波长LED，用于多色，宽带或“白色”排放
公开(公告)号：US20080272387A1
公开(公告)日：2008-11-06
申请号：US12174087
申请日：2008-07-16
申请人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/14 , H01L2224/05541 , H01L2224/05005
摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.
摘要翻译：提供了一种适配的LED，其包括短波长LED和再发射半导体结构，其中再发射半导体结构包括不位于pn结内的至少一个势阱。势阱通常是量子阱。适配的LED可以是白色或近白色的LED灯。再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。此外，提供了包括根据本发明的适配LED的图形显示装置和照明装置。

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