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1. 发明申请

US20130193540A1 Apparatus and Method for Reducing Dark Current in Image Sensors 有权
标题翻译：降低图像传感器暗电流的装置和方法
公开(公告)号：US20130193540A1
公开(公告)日：2013-08-01
申请号：US13436364
申请日：2012-03-30
申请人： Miao-Cheng Liao , Jinn-Kwei Liang , Wen-Chieh Hsieh , Shiu-Ko JangJian , Hsiang Hsiang Ko , Ying-Lang Wang
发明人： Miao-Cheng Liao , Jinn-Kwei Liang , Wen-Chieh Hsieh , Shiu-Ko JangJian , Hsiang Hsiang Ko , Ying-Lang Wang
IPC分类号： H01L31/0232 , H01L31/0216
CPC分类号： H01L31/1804 , H01L27/1462 , H01L27/1464 , H01L31/103 , Y02E10/547 , Y02P70/521
摘要： A method for reducing dark current in image sensors comprises providing a backside illuminated image sensor wafer, depositing a first passivation layer on a backside of the backside illuminated image sensor wafer, depositing a plasma enhanced passivation layer on the first passivation layer and depositing a second passivation layer on the plasma enhanced passivation layer.
摘要翻译：一种用于减小图像传感器中的暗电流的方法包括提供背面照射的图像传感器晶片，在背面照射的图像传感器晶片的背面上沉积第一钝化层，在第一钝化层上沉积等离子体增强的钝化层并沉积第二钝化层层上的等离子体增强钝化层。

2. 发明授权

US09379275B2 Apparatus and method for reducing dark current in image sensors 有权
标题翻译：降低图像传感器暗电流的装置和方法
公开(公告)号：US09379275B2
公开(公告)日：2016-06-28
申请号：US13436364
申请日：2012-03-30
申请人： Miao-Cheng Liao , Jinn-Kwei Liang , Wen-Chieh Hsieh , Shiu-Ko JangJian , Hsiang Hsiang Ko , Ying-Lang Wang
发明人： Miao-Cheng Liao , Jinn-Kwei Liang , Wen-Chieh Hsieh , Shiu-Ko JangJian , Hsiang Hsiang Ko , Ying-Lang Wang
IPC分类号： H01L31/18 , H01L31/103 , H01L27/146
CPC分类号： H01L31/1804 , H01L27/1462 , H01L27/1464 , H01L31/103 , Y02E10/547 , Y02P70/521
摘要： A method for reducing dark current in image sensors comprises providing a backside illuminated image sensor wafer, depositing a first passivation layer on a backside of the backside illuminated image sensor wafer, depositing a plasma enhanced passivation layer on the first passivation layer and depositing a second passivation layer on the plasma enhanced passivation layer.
摘要翻译：一种用于减小图像传感器中的暗电流的方法包括提供背面照射的图像传感器晶片，在背面照射的图像传感器晶片的背面上沉积第一钝化层，在第一钝化层上沉积等离子体增强的钝化层并沉积第二钝化层层上的等离子体增强钝化层。

3. 发明申请

US20050074554A1 Method of forming inter-metal dielectric layer structure 审中-公开
标题翻译：形成金属间介电层结构的方法
公开(公告)号：US20050074554A1
公开(公告)日：2005-04-07
申请号：US10679764
申请日：2003-10-06
申请人： Shiu-Ko Jangjian , Sheng-Wen Chen , Miao-Cheng Liao , Hung-Jui Chang , Ming-Hui Lin , Ying-Lang Wang
发明人： Shiu-Ko Jangjian , Sheng-Wen Chen , Miao-Cheng Liao , Hung-Jui Chang , Ming-Hui Lin , Ying-Lang Wang
IPC分类号： B32B17/06 , C23C16/26 , C23C16/40 , C23C16/56 , H01L21/316
CPC分类号： H01L21/02126 , C23C16/401 , C23C16/56 , H01L21/02167 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02271 , H01L21/31629 , H01L21/31633
摘要： A inter-metal dielectric layer structure and the method of the same are provided. The method includes the following steps. A process gas is introduced to form a low-k dielectric layer over the substrate. A reactant gas is in situ introduced to etch the low-k dielectric layer back and to react with the process gas to form a dielectric layer containing an extra element on the low-k dielectric layer. The extra element is provided by the reactant gas. A volume ratio of the reactant gas to the process gas is larger than about 2. The reactant gas may be a nitrogen fluoride (NF3) gas for providing extra nitrogen (N) or a carbon fluoride (CxFy) gas for providing extra carbon (C).
摘要翻译：提供金属间介电层结构及其方法。该方法包括以下步骤。引入工艺气体以在衬底上形成低k电介质层。原位引入反应气体以将低k电介质层回蚀刻并与工艺气体反应，形成在低k电介质层上含有额外元素的电介质层。额外的元素由反应物气体提供。反应气体与工艺气体的体积比大于约2.反应气体可以是用于提供额外的氮（N）或氟化碳（C x F y）气体的氮氟化物（NF 3）气体，用于提供额外的碳（C ）。

4. 发明申请

US20120292639A1 STRESSED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING 有权
标题翻译：应力半导体器件及其制造方法
公开(公告)号：US20120292639A1
公开(公告)日：2012-11-22
申请号：US13111732
申请日：2011-05-19
申请人： Miao-Cheng Liao , Min Hao Hong , Hsiang Hsiang Ko , Kei-Wei Chen , Ying-Lang Wang
发明人： Miao-Cheng Liao , Min Hao Hong , Hsiang Hsiang Ko , Kei-Wei Chen , Ying-Lang Wang
IPC分类号： H01L29/06 , H01L29/24 , H01L21/762
CPC分类号： H01L21/823807 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/0262
摘要： A semiconductor device and method of manufacturing a semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate and forming a dielectric layer over the substrate. The method further includes forming a first trench within the dielectric layer, wherein the first trench extends through the dielectric layer and epitaxially (epi) growing a first active layer within the first trench and selectively curing with a radiation energy the dielectric layer adjacent to the first active layer.
摘要翻译：公开了一种制造半导体器件的半导体器件和方法。用于制造半导体器件的示例性半导体器件和方法增强载流子迁移率。该方法包括提供衬底并在衬底上形成电介质层。该方法还包括在电介质层内形成第一沟槽，其中第一沟槽延伸穿过电介质层并且外延（epi）在第一沟槽内生长第一有源层，并用辐射能选择性地固化与第一沟槽相邻的介电层活动层

5. 发明授权

US08455883B2 Stressed semiconductor device and method of manufacturing 有权
标题翻译：强调半导体器件及其制造方法
公开(公告)号：US08455883B2
公开(公告)日：2013-06-04
申请号：US13111732
申请日：2011-05-19
申请人： Miao-Cheng Liao , Min Hao Hong , Hsiang Hsiang Ko , Kei-Wei Chen , Ying-Lang Wang
发明人： Miao-Cheng Liao , Min Hao Hong , Hsiang Hsiang Ko , Kei-Wei Chen , Ying-Lang Wang
IPC分类号： H01L29/15 , H01L31/052 , H01L21/331
CPC分类号： H01L21/823807 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/0262
摘要： A semiconductor device and method of manufacturing a semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate and forming a dielectric layer over the substrate. The method further includes forming a first trench within the dielectric layer, wherein the first trench extends through the dielectric layer and epitaxially (epi) growing a first active layer within the first trench and selectively curing with a radiation energy the dielectric layer adjacent to the first active layer.
摘要翻译：公开了一种制造半导体器件的半导体器件和方法。用于制造半导体器件的示例性半导体器件和方法增强载流子迁移率。该方法包括提供衬底并在衬底上形成电介质层。该方法还包括在电介质层内形成第一沟槽，其中第一沟槽延伸穿过电介质层并且外延（epi）在第一沟槽内生长第一有源层，并用辐射能选择性地固化与第一沟槽相邻的介电层活动层

6. 发明授权

US08847286B2 Image sensor and method of manufacturing 有权
标题翻译：图像传感器及制造方法
公开(公告)号：US08847286B2
公开(公告)日：2014-09-30
申请号：US13349221
申请日：2012-01-12
申请人： Shiu-Ko Jangjian , Kei-Wei Chen , Szu-An Wu , Ying-Lang Wang
发明人： Shiu-Ko Jangjian , Kei-Wei Chen , Szu-An Wu , Ying-Lang Wang
IPC分类号： H01L27/148
CPC分类号： H01L27/14621 , H01L27/14623 , H01L27/1464
摘要： An image sensor includes a substrate having opposite first and second sides, a multilayer structure on the first side of the substrate, and a photo-sensitive element on the second side of the substrate. The photo-sensitive element is configured to receive light that is incident upon the first side and transmitted through the multilayer structure and the substrate. The multilayer structure includes first and second light transmitting layers. The first light transmitting layer is sandwiched between the substrate and the second light transmitting layer. The first light transmitting layer has a refractive index that is from 60% to 90% of a refractive index of the substrate. The second light transmitting layer has a refractive index that is lower than the refractive index of the first light transmitting layer and is from 40% to 70% of the refractive index of the substrate.
摘要翻译：图像传感器包括具有相对的第一和第二侧的基板，在基板的第一侧上的多层结构和在基板的第二侧上的感光元件。光敏元件被配置为接收入射在第一侧并透过多层结构和基板的光。多层结构包括第一和第二透光层。第一透光层夹在基板和第二透光层之间。第一透光层的折射率为基板折射率的60％至90％。第二透光层的折射率低于第一透光层的折射率，为基板的折射率的40％〜70％。

7. 发明申请

US20130193538A1 Methods and Apparatus for an Improved Reflectivity Optical Grid for Image Sensors 有权
标题翻译：用于图像传感器的改进的反射光学网格的方法和装置
公开(公告)号：US20130193538A1
公开(公告)日：2013-08-01
申请号：US13363280
申请日：2012-01-31
申请人： Shiu-Ko JangJian , Kei-Wei Chen , Ying-Lang Wang
发明人： Shiu-Ko JangJian , Kei-Wei Chen , Ying-Lang Wang
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L31/022441 , H01L27/14623 , H01L27/14629 , H01L27/1464 , H01L31/022433
摘要： An improved reflectivity optical grid for image sensors. In an embodiment, a backside illuminated CIS device includes a semiconductor substrate having a pixel array area comprising a plurality of photosensors formed on a front side surface of the semiconductor substrate, each of the photosensors forming a pixel in the pixel array area; an optical grid material disposed over a backside surface of the semiconductor substrate, the optical grid material patterned to form an optical grid that bounds each of the pixels in the pixel array area and extending above the semiconductor substrate, the optical grid having sidewalls and a top portion; and a highly reflective coating formed over the optical grid, comprising a pure metal coating of a metal that is at least 99% pure, and a high-k dielectric coating over the pure metal coating that has a refractive index of greater than about 2.0. Methods are also disclosed.
摘要翻译：用于图像传感器的改进的反射光栅。在一个实施例中，背面照明的CIS器件包括具有像素阵列区域的半导体衬底，该像素阵列区域包括形成在半导体衬底的前侧表面上的多个光电传感器，每个光电传感器在像素阵列区域中形成像素; 设置在半导体衬底的背侧表面上的光栅格材料，所述光栅格材料被图案化以形成限定像素阵列区域中的每个像素并在半导体衬底上方延伸的光栅，所述光栅具有侧壁和顶部一部分; 以及形成在光栅上的高反射涂层，包括纯金属的纯金属涂层，其纯度至少为99％，纯金属涂层上的高k电介质涂层具有大于约2.0的折射率。还公开了方法。

8. 发明申请

US20130075831A1 METAL GATE STACK HAVING TIALN BLOCKING/WETTING LAYER 审中-公开
标题翻译：金属门盖有天然气阻塞/湿润层
公开(公告)号：US20130075831A1
公开(公告)日：2013-03-28
申请号：US13244355
申请日：2011-09-24
申请人： Shiu-Ko JangJian , Szu-An Wu , Ying-Lang Wang , Chi-Wen Liu
发明人： Shiu-Ko JangJian , Szu-An Wu , Ying-Lang Wang , Chi-Wen Liu
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545
摘要： A metal gate stack having a TiAlN blocking/wetting layer, and methods of manufacturing the same, are disclosed. In an example, an integrated circuit device includes a semiconductor substrate and a gate stack disposed over the semiconductor substrate. The gate stack includes a gate dielectric layer disposed over the semiconductor substrate; a work function layer disposed over the gate dielectric layer; a multi-function wetting/blocking layer disposed over the work function layer, wherein the multi-function wetting/blocking layer is a titanium aluminum nitride layer; and a conductive layer disposed over the multi-function wetting/blocking layer.
摘要翻译：公开了具有TiAlN阻挡/润湿层的金属栅极堆叠及其制造方法。在一个示例中，集成电路器件包括设置在半导体衬底上的半导体衬底和栅极堆叠。栅极堆叠包括设置在半导体衬底上的栅介质层; 设置在所述栅极介电层上的功函数层; 设置在所述功函数层上的多功能润湿/阻挡层，其中所述多功能润湿/阻挡层是氮化铝钛层; 以及设置在多功能润湿/阻挡层上的导电层。

9. 发明授权

US07611589B2 Methods of spin-on wafer cleaning 有权
标题翻译：旋转晶圆清洗方法
公开(公告)号：US07611589B2
公开(公告)日：2009-11-03
申请号：US11072114
申请日：2005-03-04
申请人： Jun Wu , Dong-Xuan Lu , Shih-Chi Lin , Wen-Long Lee , Yi-An Jian , Guang-Cheng Wang , Shiu-Ko JangJian , Chyi-Tsong Ni , Szu-An Wu , Ying-Lang Wang
发明人： Jun Wu , Dong-Xuan Lu , Shih-Chi Lin , Wen-Long Lee , Yi-An Jian , Guang-Cheng Wang , Shiu-Ko JangJian , Chyi-Tsong Ni , Szu-An Wu , Ying-Lang Wang
IPC分类号： B08B3/02 , B08B1/04
CPC分类号： B08B1/04 , B08B3/02 , H01L21/67051
摘要： A method for spin-on wafer cleaning. The method comprises controlling spin speed and vertical water jet pressure. The vertical jet pressure and the spin speed are substantially maintained in inverse proportion. Wafer spin speed is between 50 to 1200 rpm. Vertical wafer jet pressure is between 0.05 to 100 KPa.
摘要翻译：旋转晶片清洗的方法。该方法包括控制旋转速度和垂直喷水压力。垂直喷射压力和旋转速度基本保持成反比例。晶圆转速在50至1200rpm之间。垂直晶片喷射压力为0.05至100KPa。

10. 发明授权

US08772899B2 Method and apparatus for backside illumination sensor 有权
标题翻译：背面照明传感器的方法和装置
公开(公告)号：US08772899B2
公开(公告)日：2014-07-08
申请号：US13409924
申请日：2012-03-01
申请人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Ying-Lang Wang
发明人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Ying-Lang Wang
IPC分类号： H01L31/00 , H01L31/02
CPC分类号： H01L27/1464 , H01L27/14687
摘要： Methods and apparatus for a backside illuminated (BSI) image sensor device are disclosed. A BSI sensor device is formed on a substrate comprising a photosensitive diode. The substrate may be thinned at the backside, then a B doped Epi-Si(Ge) layer may be formed on the backside surface of the substrate. Additional layers may be formed on the B doped Epi-Si(Ge) layer, such as a metal shield layer, a dielectric layer, a micro-lens, and a color filter.
摘要翻译：公开了用于背面照明（BSI）图像传感器装置的方法和装置。在包括感光二极管的基板上形成BSI传感器装置。衬底可以在背面变薄，则可以在衬底的背面上形成B掺杂的Epi-Si（Ge）层。另外的层可以形成在B掺杂的Epi-Si（Ge）层上，例如金属屏蔽层，电介质层，微透镜和滤色器。

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