专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08363188B2 Array substrate of liquid crystal display device and fabricating method thereof 有权
标题翻译：液晶显示装置的阵列基板及其制造方法
公开(公告)号：US08363188B2
公开(公告)日：2013-01-29
申请号：US11321997
申请日：2005-12-29
申请人： Mi Sook Nam , Jong Won Moon , Se June Kim , Ha Young Lee
发明人： Mi Sook Nam , Jong Won Moon , Se June Kim , Ha Young Lee
IPC分类号： G02F1/1333 , G02F1/1337 , G02F1/1343
CPC分类号： G02F1/13363 , G02F2001/133565 , G02F2001/133633 , G02F2001/133638 , G02F2413/09
摘要： An array substrate of an LCD and a fabricating method thereof are provided. A first insulating layer is formed on the substrate. A TFT and a hardened liquid crystal layer are provided in a pixel region of the substrate. A second insulating layer is formed in the pixel region around the hardened liquid crystal layer such that the second insulating layer and the hardened liquid crystal layer are substantially planar. A first alignment layer is formed between the hardened liquid crystal layer and the first insulating layer. A pixel electrode is formed on the second insulating layer and the hardened liquid crystal layer and contacts a drain region of the TFT through a hole in the first insulating layer. A second alignment layer is formed on the entire substrate over the second insulating layer and the hardened liquid crystal layer.
摘要翻译：提供LCD的阵列基板及其制造方法。在基板上形成第一绝缘层。 TFT和硬化液晶层设置在基板的像素区域中。第二绝缘层形成在硬化液晶层周围的像素区域中，使得第二绝缘层和硬化液晶层基本上是平面的。在硬化液晶层和第一绝缘层之间形成第一取向层。在第二绝缘层和硬化液晶层上形成像素电极，并且通过第一绝缘层中的孔与TFT的漏极区域接触。在第二绝缘层和硬化液晶层上的整个基板上形成第二取向层。

2. 发明授权

US06239468B1 Sensor thin film transistor for an optical detecting sensor 有权
标题翻译：用于光学检测传感器的传感器薄膜晶体管
公开(公告)号：US06239468B1
公开(公告)日：2001-05-29
申请号：US09456389
申请日：1999-12-08
申请人： Youn Gyoung Chang , Jeong Hyun Kim , Se June Kim , Jae Kyun Lee , Jong Hoon Yi
发明人： Youn Gyoung Chang , Jeong Hyun Kim , Se June Kim , Jae Kyun Lee , Jong Hoon Yi
IPC分类号： H01L2701
CPC分类号： H01L29/78696 , H01L29/41733 , H01L29/458
摘要： A sensor TFT includes a substrate, a gate electrode formed on the substrate, a semiconductor layer patterned on the insulating layer to generate an optical current using received light, source and drain electrodes formed on the semiconductor layer, the source and drain electrodes being spaced apart from each other, and a conductive channel defined by an area between the source and drain electrodes, wherein the conductive channel is not rectangular-shaped, such that the channel width is increased for a fixed channel length.
摘要翻译：传感器TFT包括基板，形成在基板上的栅极电极，在绝缘层上图案化的半导体层，使用接收的光产生光电流，形成在半导体层上的源极和漏极，源极和漏极间隔开以及由源极和漏极之间的区域限定的导电沟道，其中导电沟道不是矩形的，使得沟道宽度在固定沟道长度上增加。

3. 发明授权

US06953978B2 Thin film transistor type optical sensor 有权
标题翻译：薄膜晶体管型光学传感器
公开(公告)号：US06953978B2
公开(公告)日：2005-10-11
申请号：US10867823
申请日：2004-06-16
申请人： Youn Gyoung Chang , Jeong Hyun Kim , Se June Kim
发明人： Youn Gyoung Chang , Jeong Hyun Kim , Se June Kim
IPC分类号： G01J1/02 , G06K9/00 , H01L29/04 , H01L31/0232 , H01L31/036 , H01L31/113
CPC分类号： G06K9/00107 , G06K9/0004 , G06K9/0012 , H01L31/1136
摘要： A image detector comprises a light source for radiating light in accordance with a predetermined signal; a window for transmitting the light from the light source; a thin film phototransistor for generating an optical current in accordance with the intensity of external light; a storage capacitor for storing charge information transmitted from the thin film phototransistor; a thin film switching transistor for outputting the information stored in the storage capacitor in accordance with an external control signal; an insulating layer for covering the window, the thin film phototransistor, the storage capacitor, and the thin film switching transistor; a protecting layer formed on the insulating layer; and a conductive object detection pattern formed on the protecting layer to apply an electrical power supply signal to the light source when a conductive living object contacts the conductive objecting detecting pattern.
摘要翻译：图像检测器包括用于根据预定信号照射光的光源; 用于从光源透射光的窗口; 用于根据外部光的强度产生光电流的薄膜光电晶体管; 用于存储从薄膜光电晶体管传送的电荷信息的存储电容器; 薄膜开关晶体管，用于根据外部控制信号输出存储在存储电容器中的信息; 用于覆盖窗户的绝缘层，薄膜光电晶体管，存储电容器和薄膜开关晶体管; 形成在绝缘层上的保护层; 以及形成在所述保护层上的导电物体检测图案，以在导电性物体接触所述导电性物体检测图案时向所述光源施加电力供应信号。

4. 发明授权

US06242769B1 Thin film transistor type photo sensor 有权
标题翻译：薄膜晶体管型光电传感器
公开(公告)号：US06242769B1
公开(公告)日：2001-06-05
申请号：US09453299
申请日：1999-12-03
申请人： Youn Gyoung Chang , Jeong Hyun Kim , Se June Kim , Jae Kyun Lee , Jong Hoon Yi
发明人： Youn Gyoung Chang , Jeong Hyun Kim , Se June Kim , Jae Kyun Lee , Jong Hoon Yi
IPC分类号： H01L31062
CPC分类号： H01L27/14678 , H01L29/78633
摘要： A TFT type optical detecting sensor includes a sensor TFT for generating optical current by detecting light reflected from an object, a storage capacitor for storing charges of the optical current, and a switching TFT for controlling releasing of the charges stored in the storage capacitor. The storage capacitor is made of a transparent conductive material, such that light is transmitted from a light source through the storage capacitor to the object.
摘要翻译： TFT型光检测传感器包括用于通过检测从物体反射的光产生光电流的传感器TFT，用于存储光电流的电荷的存储电容器，以及用于控制存储在存储电容器中的电荷释放的开关TFT。存储电容器由透明导电材料制成，使得光从光源通过存储电容器传输到物体。

5. 发明授权

US07256842B2 Array substrate of liquid crystal display and fabricating method thereof 有权
标题翻译：液晶显示阵列基板及其制造方法
公开(公告)号：US07256842B2
公开(公告)日：2007-08-14
申请号：US10183683
申请日：2002-06-28
申请人： Kwang Jo Hwang , Woo Hyun Kim , Se June Kim
发明人： Kwang Jo Hwang , Woo Hyun Kim , Se June Kim
IPC分类号： G02F1/1343
CPC分类号： G02F1/136213 , G02F2001/13629
摘要： An array substrate of a liquid crystal display being capable of increasing the electrostatic capacitance of a storage capacitor without decreasing the aperture ratio of the LCD. In the array substrate, the gate line is formed a disposed material of a first and a second metal layer. The first metal layer of the gate line is extended on the pixel area.
摘要翻译：液晶显示器的阵列基板能够在不降低LCD的开口率的情况下增加存储电容器的静电电容。在阵列基板中，栅极线形成第一和第二金属层的设置材料。栅极线的第一金属层在像素区域上延伸。

6. 发明授权

US06774396B1 Thin film transistor type optical sensor 有权
标题翻译：薄膜晶体管型光学传感器
公开(公告)号：US06774396B1
公开(公告)日：2004-08-10
申请号：US09487173
申请日：2000-01-19
申请人： Youn Gyoung Chang , Jeong Hyun Kim , Se June Kim
发明人： Youn Gyoung Chang , Jeong Hyun Kim , Se June Kim
IPC分类号： H01L2904
CPC分类号： G06K9/00107 , G06K9/0004 , G06K9/0012 , H01L31/1136
摘要： A image detector comprises a light source for radiating light in accordance with a predetermined signal; a window for transmitting the light from the light source; a thin film phototransistor for generating an optical current in accordance with the intensity of external light; a storage capacitor for storing charge information transmitted from the thin film phototransistor; a thin film switching transistor for outputting the information stored in the storage capacitor in accordance with an external control signal; an insulating layer for covering the window, the thin film phototransistor, the storage capacitor, and the thin film switching transistor, a protecting layer formed on the insulating layer; and a conductive object detection pattern formed on the protecting layer to apply an electrical power supply signal to the light source when a conductive living object contacts the conductive objecting detecting pattern.
摘要翻译：图像检测器包括用于根据预定信号照射光的光源; 用于从光源透射光的窗口; 用于根据外部光的强度产生光电流的薄膜光电晶体管; 用于存储从薄膜光电晶体管传送的电荷信息的存储电容器; 薄膜开关晶体管，用于根据外部控制信号输出存储在存储电容器中的信息; 用于覆盖窗口的绝缘层，薄膜光电晶体管，存储电容器和薄膜开关晶体管，形成在绝缘层上的保护层; 以及形成在所述保护层上的导电物体检测图案，以在导电性物体接触所述导电性物体检测图案时向所述光源施加电力供应信号。

7. 发明授权

US06445003B1 Thin film transistor (TFT) type optical detecting sensor 有权
标题翻译：薄膜晶体管（TFT）型光学检测传感器
公开(公告)号：US06445003B1
公开(公告)日：2002-09-03
申请号：US09562446
申请日：2000-05-01
申请人： Youn Gyoung Chang , Jeong Hyun Kim , Se June Kim , Jae Kyun Lee
发明人： Youn Gyoung Chang , Jeong Hyun Kim , Se June Kim , Jae Kyun Lee
IPC分类号： H01L2904
CPC分类号： H01L29/78696 , H01L27/14609 , H01L27/14623 , H01L27/14692
摘要： A TFT type optical detecting sensor includes a capacitor, a sensor TFT, and a switching TFT each having an active layer with a channel having an elongated width. The width of the channel of the sensor TFT is substantially defined by a distance of a side of the pixel excluding the switching source wire and sensor drain wire. The first electrode of the capacitor of the optical detecting sensor is electrically connected to the sensor gate electrode of the sensor TFT.
摘要翻译： TFT型光检测传感器包括电容器，传感器TFT和开关TFT，每个TFT具有具有细长宽度的通道的有源层。传感器TFT的通道的宽度基本上由除开关源极线和传感器漏极线之外的像素的一侧的距离限定。光检测传感器的电容器的第一电极电连接到传感器TFT的传感器栅电极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式