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1. 发明申请

US20120248458A1 VERTICALLY STRUCTURED GROUP III NITRIDE SEMICONDUCTOR LED CHIP AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：垂直结构化III族氮化物半导体LED芯片及其制造方法
公开(公告)号：US20120248458A1
公开(公告)日：2012-10-04
申请号：US13503582
申请日：2009-11-05
申请人： Meoung Whan Cho , Seog Woo Lee , Pil Guk Jang , Ryuichi Toba , Tatsunori Toyota , Yoshitaka Kadowaki
发明人： Meoung Whan Cho , Seog Woo Lee , Pil Guk Jang , Ryuichi Toba , Tatsunori Toyota , Yoshitaka Kadowaki
IPC分类号： H01L33/40 , H01L33/08
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： A method for manufacturing vertically structured Group III nitride semiconductor LED chips includes a step of forming a light emitting laminate on a growth substrate; a step of forming a plurality of separate light emitting structures by partially removing the light emitting laminate to partially expose the growth substrate; a step of forming a conductive support on the plurality of light emitting structures; a step of lifting off the growth substrate from the plurality of light emitting structures; and a step of cutting the conductive support thereby singulating a plurality of LED chips each having the light emitting structure. The step of partially removing the light emitting laminate is performed such that each of the plurality of light emitting structures has a top view shape of a circle or a 4n-gon en” is a positive integer) having rounded corners.
摘要翻译：一种用于制造垂直结构的III族氮化物半导体LED芯片的方法包括在生长衬底上形成发光层压体的步骤; 通过部分去除所述发光层压体以部分地暴露所述生长衬底来形成多个分离的发光结构的步骤; 在所述多个发光结构上形成导电支撑体的步骤; 从多个发光结构剥离生长衬底的步骤; 以及切割导电支撑件的步骤，从而将每个具有发光结构的多个LED芯片分离。执行部分去除发光层压体的步骤，使得多个发光结构中的每一个具有圆角的顶视图形状或具有圆角的4n-gon en为正整数）。

2. 发明授权

US08962362B2 Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same 有权
标题翻译： III组氮化物半导体LED芯片及其制造方法
公开(公告)号：US08962362B2
公开(公告)日：2015-02-24
申请号：US13503582
申请日：2009-11-05
申请人： Meoung Whan Cho , Seog Woo Lee , Pil Guk Jang , Ryuichi Toba , Tatsunori Toyota , Yoshitaka Kadowaki
发明人： Meoung Whan Cho , Seog Woo Lee , Pil Guk Jang , Ryuichi Toba , Tatsunori Toyota , Yoshitaka Kadowaki
IPC分类号： H01L33/40 , H01L33/08 , H01L33/32 , H01L33/00 , H01L33/62
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： A method for manufacturing vertically structured Group III nitride semiconductor LED chips includes a step of forming a light emitting laminate on a growth substrate; a step of forming a plurality of separate light emitting structures by partially removing the light emitting laminate to partially expose the growth substrate; a step of forming a conductive support on the plurality of light emitting structures; a step of lifting off the growth substrate from the plurality of light emitting structures; and a step of cutting the conductive support thereby singulating a plurality of LED chips each having the light emitting structure. The step of partially removing the light emitting laminate is performed such that each of the plurality of light emitting structures has a top view shape of a circle or a 4n-gon (“n” is a positive integer) having rounded corners.
摘要翻译：一种用于制造垂直结构的III族氮化物半导体LED芯片的方法包括在生长衬底上形成发光层压体的步骤; 通过部分去除所述发光层压体以部分地暴露所述生长衬底来形成多个分离的发光结构的步骤; 在所述多个发光结构上形成导电支撑体的步骤; 从多个发光结构剥离生长衬底的步骤; 以及切割导电支撑件的步骤，从而将每个具有发光结构的多个LED芯片分离。执行部分去除发光层压体的步骤，使得多个发光结构中的每一个具有圆形的顶视图形状或具有圆角的4n-gon（“n”是正整数）。

3. 发明申请

US20120061683A1 GROUP III NITRIDE SEMICONDUCTOR GROWTH SUBSTRATE, GROUP III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, GROUP III NITRIDE SEMICONDUCTOR ELEMENT AND GROUP III NITRIDE SEMICONDUCTOR FREE-STANDING SUBSTRATE, AND METHOD OF PRODUCING THE SAME 有权
标题翻译： III族氮化物半导体生长衬底，III族氮化物半导体外延衬底，III族氮化物半导体元件和III族氮化物半导体自由基底座及其制造方法
公开(公告)号：US20120061683A1
公开(公告)日：2012-03-15
申请号：US13259788
申请日：2010-03-25
申请人： Ryuichi Toba , Masahito Miyashita , Tatsunori Toyota , Yoshitaka Kadowaki
发明人： Ryuichi Toba , Masahito Miyashita , Tatsunori Toyota , Yoshitaka Kadowaki
IPC分类号： H01L29/16 , H01L21/20 , H01L29/20
CPC分类号： H01L21/02365 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/0254 , H01L21/02664
摘要： An object of the present invention is to provide a Group III nitride semiconductor epitaxial substrate, a Group III nitride semiconductor element, and a Group III nitride semiconductor free-standing substrate, which have good crystallinity, with not only AlGaN, GaN, and GaInN the growth temperature of which is 1050° C. or less, but also with AlxGa1-xN having a high Al composition, the growth temperature of which is high; a Group III nitride semiconductor growth substrate used for producing these, and a method for efficiently producing those. The present invention provides a Group III nitride semiconductor growth substrate comprising a crystal growth substrate including a surface portion composed of a Group III nitride semiconductor which contains at least Al, and a scandium nitride film formed on the surface portion are provided.
摘要翻译：本发明的目的是提供具有良好结晶性的III族氮化物半导体外延衬底，III族氮化物半导体元件和III族氮化物半导体独立衬底，不仅AlGaN，GaN和GaInN 其生长温度为1050℃以下，同时也具有Al生成温度高的Al组分的Al x Ga 1-x N; 用于制造它们的III族氮化物半导体生长衬底及其有效生产方法。本发明提供了一种III族氮化物半导体生长衬底，其包括晶体生长衬底，该晶体生长衬底包括由至少含有Al的III族氮化物半导体构成的表面部分和在表面部分上形成的钪氮化物膜。

4. 发明授权

US08878189B2 Group III nitride semiconductor growth substrate, group III nitride semiconductor epitaxial substrate, group III nitride semiconductor element and group III nitride semiconductor free-standing substrate, and method of producing the same 有权
标题翻译： III族氮化物半导体生长衬底，III族氮化物半导体外延衬底，III族氮化物半导体元件和III族氮化物半导体自支撑衬底及其制造方法
公开(公告)号：US08878189B2
公开(公告)日：2014-11-04
申请号：US13259788
申请日：2010-03-25
申请人： Ryuichi Toba , Masahito Miyashita , Tatsunori Toyota , Yoshitaka Kadowaki
发明人： Ryuichi Toba , Masahito Miyashita , Tatsunori Toyota , Yoshitaka Kadowaki
IPC分类号： H01L29/15 , H01L21/02
CPC分类号： H01L21/02365 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/0254 , H01L21/02664
摘要： An object of the present invention is to provide a Group III nitride semiconductor epitaxial substrate, a Group III nitride semiconductor element, and a Group III nitride semiconductor free-standing substrate, which have good crystallinity, with not only AlGaN, GaN, and GaInN the growth temperature of which is 1050° C. or less, but also with AlxGa1-xN having a high Al composition, the growth temperature of which is high; a Group III nitride semiconductor growth substrate used for producing these, and a method for efficiently producing those. The present invention provides a Group III nitride semiconductor growth substrate comprising a crystal growth substrate including a surface portion composed of a Group III nitride semiconductor which contains at least Al, and a scandium nitride film formed on the surface portion are provided.
摘要翻译：本发明的目的是提供具有良好结晶性的III族氮化物半导体外延衬底，III族氮化物半导体元件和III族氮化物半导体独立衬底，不仅AlGaN，GaN和GaInN 其生长温度为1050℃以下，同时也具有Al生成温度高的Al组分的Al x Ga 1-x N; 用于制造它们的III族氮化物半导体生长衬底及其有效生产方法。本发明提供了一种III族氮化物半导体生长衬底，其包括晶体生长衬底，该晶体生长衬底包括由至少含有Al的III族氮化物半导体构成的表面部分和在表面部分上形成的钪氮化物膜。

5. 发明申请

US20110254135A1 III-NITRIDE SEMICONDUCTOR GROWTH SUBSTRATE, III-NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, III-NITRIDE SEMICONDUCTOR ELEMENT, III-NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE, AND METHOD FOR FABRICATING THESE 有权
标题翻译： III型氮化物半导体生长衬底，III型氮化物半导体外延衬底，III型氮化物半导体元件，III型氮化物半导体激光器衬底及其制造方法
公开(公告)号：US20110254135A1
公开(公告)日：2011-10-20
申请号：US13142115
申请日：2009-12-25
申请人： Ryuichi Toba , Masahito Miyashita , Tatsunori Toyota
发明人： Ryuichi Toba , Masahito Miyashita , Tatsunori Toyota
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/02491 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02631
摘要： An object of the present invention is to address the problems described herein and to provide a III-nitride semiconductor epitaxial substrate, a III-nitride semiconductor element, and a III-nitride semiconductor freestanding substrate, which have good crystallinity, not only with AlGaN, GaN, or GaInN, the growth temperature of which is at or below 1050° C., but also with AlxGa1-xN, the growth temperature of which is high and which has a high Al composition, as well as a III-nitride semiconductor growth substrate for fabricating these and a method for efficiently fabricating these. The invention is characterized by being equipped with: a crystal growth substrate, at least the surface portion of which substrate includes a III-nitride semiconductor containing Al; and a single metallic layer formed on the surface portion, the single metallic layer being made from Zr or Hf.
摘要翻译：本发明的一个目的是解决本文所描述的问题，并提供具有良好结晶度的III族氮化物半导体外延衬底，III族氮化物半导体元件和III族氮化物半导体独立衬底，不仅与AlGaN， GaN或GaInN，其生长温度为或低于1050℃，而且还具有Al x Ga 1-x N，其生长温度高并且具有高Al组成，以及III族氮化物半导体生长用于制造这些的基板和用于有效地制造这些的方法。本发明的特征在于配备有：晶体生长衬底，至少其表面部分包括含有Al的III族氮化物半导体; 以及形成在表面部分上的单一金属层，该单一金属层由Zr或Hf制成。

6. 发明授权

US08736025B2 III-nitride semiconductor growth substrate, III-nitride semiconductor epitaxial substrate, III-nitride semiconductor element, III-nitride semiconductor freestanding substrate all having improved crystallinity 有权
标题翻译： III族氮化物半导体生长衬底，III族氮化物半导体外延衬底，III族氮化物半导体元件，III族氮化物半导体独立式衬底，均具有改善的结晶度
公开(公告)号：US08736025B2
公开(公告)日：2014-05-27
申请号：US13142115
申请日：2009-12-25
申请人： Ryuichi Toba , Masahito Miyashita , Tatsunori Toyota
发明人： Ryuichi Toba , Masahito Miyashita , Tatsunori Toyota
IPC分类号： H01L29/20
CPC分类号： H01L21/02491 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02631
摘要： An object of the present invention is to address the problems described herein and to provide a III-nitride semiconductor epitaxial substrate, a III-nitride semiconductor element, and a III-nitride semiconductor freestanding substrate, which have good crystallinity, not only with AlGaN, GaN, or GaInN, the growth temperature of which is at or below 1050° C., but also with AlxGa1-xN, the growth temperature of which is high and which has a high Al composition, as well as a III-nitride semiconductor growth substrate for fabricating these and a method for efficiently fabricating these. The invention is characterized by being equipped with: a crystal growth substrate, at least the surface portion of which substrate includes a III-nitride semiconductor containing Al; and a single metallic layer formed on the surface portion, the single metallic layer being made from Zr or Hf.
摘要翻译：本发明的一个目的是解决本文所描述的问题，并提供具有良好结晶度的III族氮化物半导体外延衬底，III族氮化物半导体元件和III族氮化物半导体独立衬底，不仅与AlGaN， GaN或GaInN，其生长温度为或低于1050℃，而且还具有Al x Ga 1-x N，其生长温度高并且具有高Al组成，以及III族氮化物半导体生长用于制造这些的基板和用于有效地制造这些的方法。本发明的特征在于配备有：晶体生长衬底，至少其表面部分包括含有Al的III族氮化物半导体; 以及形成在表面部分上的单一金属层，该单一金属层由Zr或Hf制成。

7. 发明授权

US08765584B2 Semiconductor device and manufacturing method therefor 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08765584B2
公开(公告)日：2014-07-01
申请号：US13516889
申请日：2011-07-26
申请人： Yoshitaka Kadowaki , Tatsunori Toyota
发明人： Yoshitaka Kadowaki , Tatsunori Toyota
IPC分类号： H01L21/28 , H01L21/44
CPC分类号： H01L33/0079 , B82Y20/00 , H01L2924/0002 , H01S5/0216 , H01S5/0217 , H01S5/34333 , H01L2924/00
摘要： A semiconductor device and a manufacturing method therefor, wherein, during lift-off, no cracks due to internal stresses occur in the compound semiconductor layer. A method for manufacturing a semiconductor device having a structure in which a semiconductor layer is bonded on a supporting substrate, including: a device region formation step of forming a device region including the semiconductor layer on a growth substrate through a lift-off layer; a columnar member formation step of forming a columnar member on the growth substrate; a bonding step of bonding the tops of the semiconductor layer and the columnar member to a supporting substrate; a lift-off step of separating the bottom face of the semiconductor layer from the growth substrate by removing the lift-off layer, and not separating the columnar member from the growth substrate; and a step of separating the columnar member from the supporting substrate.
摘要翻译：一种半导体器件及其制造方法，其中，在剥离期间，在化合物半导体层中不产生由于内部应力引起的裂纹。一种半导体器件的制造方法，其具有将半导体层接合在支撑基板上的结构，包括：器件区域形成步骤，通过剥离层在生长衬底上形成包括半导体层的器件区域; 在所述生长基板上形成柱状部件的柱状部件形成工序; 键合步骤，将半导体层和柱状构件的顶部粘合到支撑衬底; 剥离步骤，通过去除剥离层将半导体层的底面与生长衬底分离，并且不将柱状构件与生长衬底分离; 以及将柱状构件与支撑基板分离的工序。

8. 发明授权

US09082893B2 Luminescent device and manufacturing method for luminescent device and semiconductor device 有权
标题翻译：发光装置及发光装置及半导体装置的制造方法
公开(公告)号：US09082893B2
公开(公告)日：2015-07-14
申请号：US13978677
申请日：2012-01-11
申请人： Yoshitaka Kadowaki , Tatsunori Toyota
发明人： Yoshitaka Kadowaki , Tatsunori Toyota
IPC分类号： H01L27/15 , H01L33/00 , H01L33/02 , H01L33/46 , H01S5/042 , H01S5/323
CPC分类号： H01L33/12 , H01L33/007 , H01L33/0079 , H01L33/0095 , H01L33/025 , H01L33/10 , H01L33/32 , H01L33/46 , H01S5/0425 , H01S5/32341 , H01S2301/176
摘要： A luminescent device and a manufacturing method for the luminescent device and a semiconductor device which are free from occurrence of cracks in a compound semiconductor layer due to the internal stress in the compound semiconductor layer at the time of chemical lift-off. The luminescent device manufacturing method includes forming a device region on part of an epitaxial substrate through a lift-off layer; forming a sacrificing portion, being not removed in a chemical lift-off step, around device region on epitaxial substrate; covering epitaxial substrate and semiconductor layer and forming a covering layer such that level of surface thereof in the region away from device region is lower than luminescent layer surface; removing covering layer on semiconductor layer, and that on sacrificing portion surface; forming a reflection layer on covering layer surface and semiconductor layer surface; and forming a supporting substrate by providing plating on reflection layer.
摘要翻译：一种用于发光器件和半导体器件的发光器件和制造方法，其在化学品剥离时由于化合物半导体层中的内部应力而不会在化合物半导体层中产生裂纹。发光器件制造方法包括通过剥离层在外延衬底的一部分上形成器件区域; 在外延衬底上的器件区域周围形成在化学剥离步骤中不被去除的牺牲部分; 覆盖外延衬底和半导体层并形成覆盖层，使得其远离器件区域的区域中的表面的水平低于发光层表面; 去除半导体层上的覆盖层，牺牲部分表面上的覆盖层; 在覆盖层表面和半导体层表面上形成反射层; 以及通过在反射层上提供电镀形成支撑衬底。

9. 发明申请

US20120256327A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120256327A1
公开(公告)日：2012-10-11
申请号：US13516889
申请日：2011-07-26
申请人： Yoshitaka Kadowaki , Tatsunori Toyota
发明人： Yoshitaka Kadowaki , Tatsunori Toyota
IPC分类号： H01L29/02 , H01L21/762
CPC分类号： H01L33/0079 , B82Y20/00 , H01L2924/0002 , H01S5/0216 , H01S5/0217 , H01S5/34333 , H01L2924/00
摘要： A semiconductor device and a manufacturing method therefor, wherein, during lift-off, no cracks due to internal stresses occur in the compound semiconductor layer. A method for manufacturing a semiconductor device having a structure in which a semiconductor layer is bonded on a supporting substrate, including: a device region formation step of forming a device region including the semiconductor layer on a growth substrate through a lift-off layer; a columnar member formation step of forming a columnar member on the growth substrate; a bonding step of bonding the tops of the semiconductor layer and the columnar member to a supporting substrate; a lift-off step of separating the bottom face of the semiconductor layer from the growth substrate by removing the lift-off layer, and not separating the columnar member from the growth substrate; and a step of separating the columnar member from the supporting substrate.
摘要翻译：一种半导体器件及其制造方法，其中，在剥离期间，在化合物半导体层中不产生由于内部应力引起的裂纹。一种半导体器件的制造方法，其具有将半导体层接合在支撑基板上的结构，包括：器件区域形成步骤，通过剥离层在生长衬底上形成包括半导体层的器件区域; 在所述生长基板上形成柱状部件的柱状部件形成工序; 键合步骤，将半导体层和柱状构件的顶部粘合到支撑衬底; 剥离步骤，通过去除剥离层将半导体层的底面与生长衬底分离，并且不将柱状构件与生长衬底分离; 以及将柱状构件与支撑基板分离的工序。

10. 发明授权

US08860294B2 Light emitting element and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08860294B2
公开(公告)日：2014-10-14
申请号：US13513015
申请日：2010-12-08
申请人： Tatsunori Toyota , Yutaka Ohta
发明人： Tatsunori Toyota , Yutaka Ohta
IPC分类号： H05B33/12 , H05B33/10 , H01L33/38 , H01L33/20
CPC分类号： H01L33/382 , H01L33/20 , H01L33/385
摘要： To provide a light emitting element, having: a lamination structure including a first conductive layer and a second conductive layer with a light emitting layer interposed between them; a groove structure in which the second conductive layer and the light emitting layer are divided into large and small two parts; a second conductive electrode pad that is electrically connected to the second conductive layer on the divided larger second conductive layer, a first conductive electrode pad on the divided smaller second conductive layer, and two or more electrical contacts connected to the first conductive layer so as to be independent from each other, by a conductive wiring extending to the first conductive layer, with the first conductive electrode pad as a start point.
摘要翻译：为了提供一种发光元件，具有：具有第一导电层和第二导电层的叠层结构，其间插入有发光层; 沟槽结构，其中第二导电层和发光层被分成大的和小的两部分; 第二导电电极焊盘，其在分割的较大的第二导电层上电连接到第二导电层，在分割的较小的第二导电层上的第一导电电极焊盘，以及连接到第一导电层的两个或更多个电触点，以便通过延伸到第一导电层的导电布线彼此独立，以第一导电电极焊盘为起始点。

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