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    • 2. 发明申请
    • Optical information recording medium and production method therefor
    • 光信息记录介质及其制作方法
    • US20050253210A1
    • 2005-11-17
    • US10525296
    • 2003-09-17
    • Mayumi UnoKenichi NishiuchiRie KojimaNoboru Yamada
    • Mayumi UnoKenichi NishiuchiRie KojimaNoboru Yamada
    • G11B7/00G11B7/24G11B7/243G11B7/26H01L31/0232
    • G11B7/24038G11B7/243G11B7/2534G11B7/258G11B7/266G11B2007/24306G11B2007/24316G11B2007/2432
    • An optical information recording medium of the present invention includes at least m (m is an integer of 2 or more) information layers, and each of the information layers includes a recording layer that changes irreversibly between a state A and a state B that are optically different from each other. In the case where the m information layers are taken as the first through m-th information layers in the order from a laser beam incidence side, when a recording layer included in the j-th information layer (j is an integer satisfying 1≦j≦m−1) is taken as the j-th recording layer, and when a transmittance of the j-th information layer at the time when the j-th recording layer is in the state A is TAj (%) and a transmittance of the j-th information layer at the time when the j-th recording layer is in the state B is TBj (%), the following relationship is satisfied in the j-th information layer: 0≦|TAj−TBj|/(TAj,TBj)max≦0.10 where (TAj,TBj)max is a larger value of TAj and TBj. Furthermore, at least one recording layer of the first through (m−1)th recording layers is formed of a material having a complex index of refraction (n−ik, where n is a refractive index and k is an extinction coefficient) that is different from that of the m-th recording layer.
    • 本发明的光信息记录介质至少包括m(m是2以上的整数)信息层,并且每个信息层包括在光学上的状态A和状态B之间不可逆地改变的记录层 彼此不同。 在以激光束入射侧的顺序将m个信息层作为第1〜第m个信息层的情况下,当第j个信息层(j为1〜 j = m-1)为第j个记录层,当第j个记录层处于状态A时的第j个信息层的透射率为TAj(%)和 在第j个记录层处于状态B时的第j个信息层的透射率为TBj(%),在第j个信息层中满足以下关系:<β在线公式描述 =“在线公式”end =“lead”?> 0 <= | TAj-TBj | /(TAj,TBj)max <= 0.10 <?in-line-formula description =“In-line Formulas”end = 尾部“?>其中(TAj,TBj)max是TAj和TBj的较大值。 此外,第一至第(m-1)记录层的至少一个记录层由具有复折射率(n-ik,其中n是折射率,k是消光系数)的材料形成,即 与第m记录层不同。
    • 3. 发明申请
    • Information recording medium, method of manufacturing the same, and sputtering target
    • 信息记录介质,其制造方法和溅射靶
    • US20050082162A1
    • 2005-04-21
    • US10947187
    • 2004-09-23
    • Mayumi UnoRie KojimaNoboru Yamada
    • Mayumi UnoRie KojimaNoboru Yamada
    • C23C14/00C23C14/08C23C14/34G11B7/243G11B7/26B32B3/02G11B7/24
    • C23C14/3414C23C14/0036C23C14/08G11B7/243G11B7/26G11B2007/24316G11B2007/2432
    • When manufacturing a write-once recording medium which contains an oxide having a lower oxygen content as a main component, if film formation of a recording layer is performed by introducing a large amount of oxygen into the film forming gas and the sputtering target does not contain oxygen, each medium produced has different properties, because a variation of oxygen flow in the gas easily occurs and the composition ratio of oxygen which is contained in the recording layer easily varies. To solve the problems above, an information recording medium, having at least a recording layer on a substrate and being able to record and reproduce information, contains an oxide A-O or A-O-M (A is a material which contains at least any one of Te, Sb, Ge, Sn, In, Zn, Mo and W, and M is a material which contains at least any one of a metal element, a semi-metal element, and a semiconductor-metal element), and a sputtering target used in the process of producing the layer contains at least A-O and, A and/or M. In this way, a recording layer having high reproducibility and stable properties can be produced, even in a mass production line.
    • 当制造含有氧含量较低的氧化物作为主要成分的一次写入记录介质时,如果通过向成膜气体中引入大量的氧而进行记录层的成膜,并且溅射靶不含有 氧,每种产生的介质具有不同的性质,因为气体中的氧气流的变化容易发生,并且包含在记录层中的氧的组成比容易变化。 为了解决上述问题,在基板上至少具有记录层并且能够记录和再现信息的信息记录介质包含氧化物AO或AOM(A是包含Te,Sb中的至少一种的材料 ,Ge,Sn,In,Zn,Mo和W中的至少任一种的材料,M是含有金属元素,半金属元素和半导体金属元素中的至少任一种的材料),以及用于 生产该层的方法至少包含AO和A和/或M.这样,即使在大规模生产线中也可以生产具有高重现性和稳定性能的记录层。
    • 9. 发明授权
    • Transistor with source/drain electrodes on pedestals and organic semiconductor on source/drain electrodes, and method for manufacturing same
    • 晶体管与基极上的源极/漏极电极和源极/漏极上的有机半导体及其制造方法
    • US09153789B2
    • 2015-10-06
    • US14237055
    • 2012-07-18
    • Junichi TakeyaTakafumi UemuraMayumi Uno
    • Junichi TakeyaTakafumi UemuraMayumi Uno
    • H01L51/05H01L51/10H01L29/778H01L29/16
    • H01L51/0545H01L29/1606H01L29/778H01L51/0516H01L51/105
    • An organic transistor is provided with: an insulating substrate; a pair of insulating pedestals (2, 3) that are arranged spaced apart from each other on the substrate and that form respectively raised flat surfaces; a source electrode (4) provided on the raised flat surface formed on one of the pedestals; a drain electrode (5) provided on the raised flat surface formed on the other pedestal; a gate electrode (6) provided on the substrate between the pair of pedestals; and an organic semiconductor layer (7) arranged in contact with the upper surfaces of the source electrode and the drain electrode. The gate electrode and the lower surface of the organic semiconductor layer vertically oppose each other across a gap region (8), and the side surfaces of the pedestals facing the gap region are shaped such that the lower side edges recede apart from the gate electrode with respect to the upper side edges. A contact resistance between the source and drain electrodes and the organic semiconductor layer is reduced, high-speed response performance is enhanced by shortening the channel, and short-circuits between the source and drain electrodes and the gate electrode, which accompany shortening of the channel, can be avoided.
    • 有机晶体管具有:绝缘基板; 一对绝缘基座(2,3),其在所述基板上彼此间隔开并形成分别升高的平坦表面; 设置在形成在一个基座上的凸起平坦表面上的源电极(4) 设置在形成在另一基座上的凸起平坦表面上的漏电极(5) 设置在所述一对基座之间的所述基板上的栅电极(6) 和与源电极和漏电极的上表面接触的有机半导体层(7)。 栅电极和有机半导体层的下表面跨越间隙区域(8)垂直相对,并且面对间隙区域的基座的侧表面成形为使得下侧边缘与栅极电极分离, 相对于上边缘。 源电极和漏电极与有机半导体层之间的接触电阻降低,通过缩短沟道而增加了高速响应性能,并且伴随着沟道的缩短引起源极和漏极和栅电极之间的短路 ,可以避免。
    • 10. 发明申请
    • ORGANIC TRANSISTOR AND METHOD FOR MANUFACTURING SAME
    • 有机晶体管及其制造方法
    • US20140191224A1
    • 2014-07-10
    • US14237055
    • 2012-07-18
    • Junichi TakeyaTakafumi UemuraMayumi Uno
    • Junichi TakeyaTakafumi UemuraMayumi Uno
    • H01L51/05
    • H01L51/0545H01L29/1606H01L29/778H01L51/0516H01L51/105
    • An organic transistor is provided with: an insulating substrate; a pair of insulating pedestals (2, 3) that are arranged spaced apart from each other on the substrate and that form respectively raised flat surfaces; a source electrode (4) provided on the raised flat surface formed on one of the pedestals; a drain electrode (5) provided on the raised flat surface formed on the other pedestal; a gate electrode (6) provided on the substrate between the pair of pedestals; and an organic semiconductor layer (7) arranged in contact with the upper surfaces of the source electrode and the drain electrode. The gate electrode and the lower surface of the organic semiconductor layer vertically oppose each other across a gap region (8), and the side surfaces of the pedestals facing the gap region are shaped such that the lower side edges recede apart from the gate electrode with respect to the upper side edges. A contact resistance between the source and drain electrodes and the organic semiconductor layer is reduced, high-speed response performance is enhanced by shortening the channel, and short-circuits between the source and drain electrodes and the gate electrode, which accompany shortening of the channel, can be avoided.
    • 有机晶体管具有:绝缘基板; 一对绝缘基座(2,3),其在所述基板上彼此间隔开并形成分别升高的平坦表面; 设置在形成在一个基座上的凸起平坦表面上的源电极(4) 设置在形成在另一基座上的凸起平坦表面上的漏电极(5) 设置在所述一对基座之间的所述基板上的栅电极(6) 和与源电极和漏电极的上表面接触的有机半导体层(7)。 栅电极和有机半导体层的下表面跨越间隙区域(8)垂直相对,并且面对间隙区域的基座的侧表面成形为使得下侧边缘与栅极电极分离, 相对于上边缘。 源电极和漏电极与有机半导体层之间的接触电阻降低,通过缩短沟道而增加了高速响应性能,并且伴随着沟道的缩短引起源极和漏极和栅电极之间的短路 ,可以避免。