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1. 发明授权

US07992426B2 Apparatus and method for increasing the selectivity of FET-based gas sensors 有权
标题翻译：提高基于FET的气体传感器选择性的装置和方法
公开(公告)号：US07992426B2
公开(公告)日：2011-08-09
申请号：US11587171
申请日：2005-04-21
申请人： Maximilian Fleischer , Uwe Lampe , Hans Meixner , Roland Pohle , Ralf Schneider , Elfriede Simon
发明人： Maximilian Fleischer , Uwe Lampe , Hans Meixner , Roland Pohle , Ralf Schneider , Elfriede Simon
IPC分类号： G01N33/00 , G01N27/414
CPC分类号： G01N33/0014 , G01N27/4143
摘要： A FET gas sensor having a relatively low operating temperature, for example, room temperature, is free from cross sensitivities from interfering gases by a preceding in-line filter. The sensor's service life is substantially stabilizable by using fabric-like activated charcoal filters which can be regenerated by a moderate temperature increase, and by limiting the diffusion of the analyte gas, which is made possible by the relatively small amount of gas detectable on the sensitive layer of the sensor. This substantially increases the service life of the filters. The gas sensor eliminates cross sensitivities to thereby increase the detection reliability thereof. Also, the gas sensor has relative long term stability and is economical to build. The gas sensor can read relatively weak signals generated by gas-sensitive layers, for example, without other stronger gas signals interfering with the weak signals.
摘要翻译：具有较低工作温度（例如室温）的FET气体传感器不受前面的在线过滤器的干扰气体的交叉敏感性。传感器的使用寿命通过使用织物样的活性炭过滤器可以基本上稳定，该过滤器可以通过适度的温度升高再生，并且通过限制分析物气体的扩散，这是通过敏感的可检测的相对少量的气体传感器层。这大大增加了过滤器的使用寿命。气体传感器消除了交叉敏感度，从而提高了其检测可靠性。此外，气体传感器具有相对的长期稳定性并且构建经济。气体传感器可以读取由气体敏感层产生的相对较弱的信号，例如，没有其他较强气体信号干扰弱信号。

2. 发明授权

US07772617B2 Gas sensitive field-effect-transistor 有权
标题翻译：气体敏感场效应晶体管
公开(公告)号：US07772617B2
公开(公告)日：2010-08-10
申请号：US11393371
申请日：2006-03-30
申请人： Maximilian Fleischer , Hans Meixner , Uwe Lampe , Roland Pohle , Ralf Schneider , Elfriede Simon
发明人： Maximilian Fleischer , Hans Meixner , Uwe Lampe , Roland Pohle , Ralf Schneider , Elfriede Simon
IPC分类号： G01N27/414
CPC分类号： G01N27/4143
摘要： A gas sensitive field effect transistor comprises a semiconductor substrate that includes a capacitance well, and source and drain regions of a field effect transistor. A gate of the field effect transistor is separated from the semiconductor substrate by an insulator, and a gas sensitive layer separated from the gate by an air gap. The field effect transistor provides an output signal indicative of the presence of a target gas within the air gap to an amplifier, which provides an amplified output signal that is electrically coupled to the capacitance well.
摘要翻译：气体敏感场效应晶体管包括包括电容阱的半导体衬底以及场效应晶体管的源极和漏极区。场效应晶体管的栅极通过绝缘体与半导体衬底分离，气敏层由气隙与栅极分离。场效应晶体管提供指示空气间隙内存在目标气体到放大器的输出信号，放大器提供与电容阱电耦合的放大输出信号。

3. 发明申请

US20070235773A1 Gas-sensitive field-effect transistor for the detection of hydrogen sulfide 审中-公开
标题翻译：用于检测硫化氢的气敏场效应晶体管
公开(公告)号：US20070235773A1
公开(公告)日：2007-10-11
申请号：US11396276
申请日：2006-03-31
申请人： Ignaz Eisele , Maximilian Fleischer , Gunter Freitag , Thorsten Knittel , Uwe Lampe , Hans Meixner , Roland Pohle , Elfriede Simon
发明人： Ignaz Eisele , Maximilian Fleischer , Gunter Freitag , Thorsten Knittel , Uwe Lampe , Hans Meixner , Roland Pohle , Elfriede Simon
IPC分类号： H01L23/58
CPC分类号： G01N27/4143
摘要： A gas-sensitive field-effect transistor (GasFET) for the detection or measurement of an amount of hydrogen sulfide present in ambient air includes a raised gate electrode and a transistor structure. The raised gate electrode may be formed from or coated with a gas-sensitive material such as tin oxide, or silver, silver oxide or mixtures thereof. An insulator layer may be disposed on top of the transistor structure. An air gap is formed between the gas-sensitive layer of the raised gate electrode and the insulator layer on top of the transistor structure.
摘要翻译：用于检测或测量环境空气中存在的硫化氢的量的气体敏感场效应晶体管（GasFET）包括升高的栅电极和晶体管结构。升高的栅电极可以由气体敏感材料如氧化锡或银，氧化银或其混合物形成或涂覆。绝缘体层可以设置在晶体管结构的顶部。在凸极栅电极的气体敏感层和晶体管结构顶部的绝缘体层之间形成气隙。

4. 发明申请

US20070220954A1 Fet-Based Gas Sensor 有权
标题翻译：基于FET的气体传感器
公开(公告)号：US20070220954A1
公开(公告)日：2007-09-27
申请号：US11587172
申请日：2005-04-21
申请人： Maximilian Fleischer , Hans Meixner , Elfriede Simon , Uwe Lampe , Roland Pohle
发明人： Maximilian Fleischer , Hans Meixner , Elfriede Simon , Uwe Lampe , Roland Pohle
IPC分类号： B01L5/00 , G01N33/00
CPC分类号： G01N33/0013 , G01N27/4143
摘要： The invention relates to an FET-based gas sensor comprising a gas channel for diffusing a measuring gas to a gas-sensitive layer which is actively connected to a FET for signal readout. According to the invention, an electrochemical element is at least partially inserted into the gas channel for the electrochemical conversion of interfering gases. The arrangement is permeable to the target gas.
摘要翻译：本发明涉及一种基于FET的气体传感器，其包括用于将测量气体扩散到气敏层的气体通道，气敏层主动连接到用于信号读出的FET。根据本发明，电化学元件至少部分地插入气体通道中用于干扰气体的电化学转化。该装置对目标气体是可渗透的。

5. 发明申请

US20060278528A1 Method of effecting a signal readout on a gas-sensitive field-effect transistor 有权
标题翻译：在气敏场效应晶体管上实现信号读出的方法
公开(公告)号：US20060278528A1
公开(公告)日：2006-12-14
申请号：US11393371
申请日：2006-03-30
申请人： Maximilian Fleischer , Hans Meixner , Uwe Lampe , Roland Pohle , Ralf Schneider , Elfriede Simon
发明人： Maximilian Fleischer , Hans Meixner , Uwe Lampe , Roland Pohle , Ralf Schneider , Elfriede Simon
IPC分类号： G01N27/26 , H01L23/58
CPC分类号： G01N27/4143
摘要： Method of effecting a readout of a gas-sensitive field-effect transistor having an air gap between a gate electrode with a gas-sensitive layer and the readout transistor, in which a potential occurring on the gas-sensitive layer in the presence of a target gas is passed through a noncontacting floating gate electrode to the transistor, wherein the potential of a reference electrode, which together with the floating gate electrode generates a capacitance Cw, is tracked to the potential of the floating gate electrode in order to eliminate the capacitance Cw during the measurement.
摘要翻译：在具有气体敏感层的栅电极和读出晶体管之间进行气体敏感场效应晶体管的读出的方法，其中在存在目标的情况下在气敏层上发生电位气体通过非接触式浮栅电极到达晶体管，其中参考电极的电位与浮动栅电极一起产生电容C w i被追踪到浮置栅极的电位电极，以便在测量期间消除电容C 。

6. 发明授权

US07946153B2 Method for measuring gases and/or minimizing cross sensitivity in FET-based gas sensors 有权
标题翻译：在基于FET的气体传感器中测量气体和/或最小化交叉灵敏度的方法
公开(公告)号：US07946153B2
公开(公告)日：2011-05-24
申请号：US11587173
申请日：2005-04-22
申请人： Maximilian Fleischer , Uwe Lampe , Hans Meixner , Roland Pohle , Elfriede Simon
发明人： Maximilian Fleischer , Uwe Lampe , Hans Meixner , Roland Pohle , Elfriede Simon
IPC分类号： G01N7/00
CPC分类号： G01N27/4143 , G01N33/006
摘要： A gas sensor based on a field effect transistor (“FET”) evaluates both a change in work function of a gas-sensitive layer of the FET and a change in the capacitance of the layer. Thus, two physically independent signals are read from the gas-sensitive layer, each signal representing a sensitivity to a different gas. This reduces the effect of cross-sensitivities; that is, of one gas on the target gas. The underlying physical mechanisms, the first causing a change in the work function in a reaction with gases and the second causing a change in the capacitance of the sensitive layer, are widely different. Because of this, the two parameters demonstrate different gas sensitivities. If the reactions to both gases are known, the effect of the interfering gas on the sensor signal can be compensated for, and with this the concentration of the target gas can be determined.
摘要翻译：基于场效应晶体管（“FET”）的气体传感器评估FET的气敏层的功函数变化和层的电容变化。因此，从气体敏感层读取两个物理独立的信号，每个信号表示对不同气体的敏感性。这降低了交叉敏感性的影响; 也就是目标气体上的一种气体。潜在的物理机制，首先引起与气体反应的功函数的变化，第二个导致敏感层的电容变化的物理机制是不同的。因此，这两个参数表现出不同的气体敏感性。如果对两种气体的反应是已知的，则可以补偿干扰气体对传感器信号的影响，并且可以确定目标气体的浓度。

7. 发明申请

US20090211437A1 Apparatus and Method for increasing the selectivity of fet-based gas sensors 审中-公开
标题翻译：用于增加基于胎面的气体传感器的选择性的装置和方法
公开(公告)号：US20090211437A1
公开(公告)日：2009-08-27
申请号：US11587171
申请日：2005-04-21
申请人： Maximilian Fleischer , Uwe Lampe , Hans Meixner , Roland Pohle , Ralf Schneider , Elfriede Simon
发明人： Maximilian Fleischer , Uwe Lampe , Hans Meixner , Roland Pohle , Ralf Schneider , Elfriede Simon
IPC分类号： G01N27/414
CPC分类号： G01N33/0014 , G01N27/4143
摘要： A FET gas sensor having a relatively low operating temperature, for example, room temperature, is free from cross sensitivities from interfering gases by a preceding in-line filter. The sensor's service life is substantially stabilizable by using fabric-like activated charcoal filters which can be regenerated by a moderate temperature increase, and by limiting the diffusion of the analyte gas, which is made possible by the relatively small amount of gas detectable on the sensitive layer of the sensor. This substantially increases the service life of the filters. The gas sensor eliminates cross sensitivities to thereby increase the detection reliability thereof. Also, the gas sensor has relative long term stability and is economical to build. The gas sensor can read relatively weak signals generated by gas-sensitive layers, for example, without other stronger gas signals interfering with the weak signals.
摘要翻译：具有较低工作温度（例如室温）的FET气体传感器不受前面的在线过滤器的干扰气体的交叉敏感性。传感器的使用寿命通过使用织物样的活性炭过滤器可以基本上稳定，该过滤器可以通过适度的温度升高再生，并且通过限制分析物气体的扩散，这是通过敏感的可检测的相对少量的气体传感器层。这大大增加了过滤器的使用寿命。气体传感器消除了交叉敏感度，从而提高了其检测可靠性。此外，气体传感器具有相对的长期稳定性并且构建经济。气体传感器可以读取由气体敏感层产生的相对较弱的信号，例如，没有其他较强气体信号干扰弱信号。

8. 发明授权

US07707869B2 FET-based gas sensor 有权
标题翻译：基于FET的气体传感器
公开(公告)号：US07707869B2
公开(公告)日：2010-05-04
申请号：US11587172
申请日：2005-04-21
申请人： Maximilian Fleischer , Hans Meixner , Elfriede Simon , Uwe Lampe , Roland Pohle
发明人： Maximilian Fleischer , Hans Meixner , Elfriede Simon , Uwe Lampe , Roland Pohle
IPC分类号： G01N33/00 , B01L5/00
CPC分类号： G01N33/0013 , G01N27/4143
摘要： An operating method is disclosed for the selective detection of a target gas in a gas mixture to be measured by a field effect transistor with a gas-sensitive layer disposed on a carrier substrate, wherein the gas mixture to be measured is prepared by an electrochemical element such that the measured gas mixture includes minimal amounts of interfering gases that interfere with the measurement of the target gas, and/or at least one target gas is activated such that it is detected by the gas-sensitive layer.
摘要翻译：公开了一种操作方法，用于选择性地检测待由气体敏感层设置在载体基底上的场效应晶体管测量的气体混合物中的目标气体，其中待测量的气体混合物由电化学元素使得测量的气体混合物包括干扰目标气体测量的最小量的干扰气体，和/或至少一个目标气体被激活，使得其被气敏层检测到。

9. 发明授权

US07459732B2 Gas-sensitive field-effect transistor with air gap 失效
标题翻译：具有气隙的气敏场效应晶体管
公开(公告)号：US07459732B2
公开(公告)日：2008-12-02
申请号：US11396243
申请日：2006-03-31
申请人： Maximilian Fleischer , Uwe Lampe , Hans Meixner , Roland Pohle , Ralf Schneider , Elfriede Simon
发明人： Maximilian Fleischer , Uwe Lampe , Hans Meixner , Roland Pohle , Ralf Schneider , Elfriede Simon
IPC分类号： H01L27/108
CPC分类号： G01N27/002 , G01N27/414
摘要： A gas-sensitive field-effect transistor may be formed from a substrate with a gas-sensitive layer and a transistor processed separately and then assembled. The substrate may be patterned to form spacers by which the height of an air gap between the transistor and the sensitive layer may be adjustable to a relatively precise degree. Formation of the spacers can be achieved by patterning the substrate using material-removal techniques. The height of the spacers may be adjusted in the layer thickness of the gas-sensitive layer and for the transistor fabricated using a CMOS process. Suitable techniques for producing recesses between the spacers include, for example, polishing, cutting, sandblasting, lithographic dry etching, or wet-chemical etching. Suitable materials for the substrate may include, for example, glass, ceramic, aluminum oxide, silicon, or a dimensionally stable polymer. Following preparation of the substrate and the transistor, the two elements of the transistor are joined, for example, using flip-chip methods or adhesive-bonding technology.
摘要翻译：气体敏感场效应晶体管可以由具有气体敏感层的衬底和分开处理的晶体管形成，然后组装。衬底可以被图案化以形成间隔物，通过该间隔物，晶体管和敏感层之间的气隙的高度可以相对精确地调节。可以通过使用材料去除技术对衬底进行图案化来实现间隔物的形成。间隔物的高度可以在气敏层的层厚度和使用CMOS工艺制造的晶体管中进行调整。用于在间隔件之间产生凹槽的合适技术包括例如抛光，切割，喷砂，光刻干蚀刻或湿法化学蚀刻。用于基材的合适材料可以包括例如玻璃，陶瓷，氧化铝，硅或尺寸稳定的聚合物。在准备衬底和晶体管之后，晶体管的两个元件例如使用倒装芯片方法或粘接技术连接。

10. 发明申请

US20060260737A1 Gas-sensitive field-effect transistor with air gap 失效
标题翻译：具有气隙的气敏场效应晶体管
公开(公告)号：US20060260737A1
公开(公告)日：2006-11-23
申请号：US11396243
申请日：2006-03-31
申请人： Maximilian Fleischer , Uwe Lampe , Hans Meixner , Roland Pohle , Ralf Schneider , Elfriede Simon
发明人： Maximilian Fleischer , Uwe Lampe , Hans Meixner , Roland Pohle , Ralf Schneider , Elfriede Simon
IPC分类号： B32B37/00
CPC分类号： G01N27/002 , G01N27/414
摘要： A gas-sensitive field-effect transistor may be formed from a substrate with a gas-sensitive layer and a transistor processed separately and then assembled. The substrate may be patterned to form spacers by which the height of an air gap between the transistor and the sensitive layer may be adjustable to a relatively precise degree. Formation of the spacers can be achieved by patterning the substrate using material-removal techniques. The height of the spacers may be adjusted in the layer thickness of the gas-sensitive layer and for the transistor fabricated using a CMOS process. Suitable techniques for producing recesses between the spacers include, for example, polishing, cutting, sandblasting, lithographic dry etching, or wet-chemical etching. Suitable materials for the substrate may include, for example, glass, ceramic, aluminum oxide, silicon, or a dimensionally stable polymer. Following preparation of the substrate and the transistor, the two elements of the transistor are joined, for example, using flip-chip methods or adhesive-bonding technology.
摘要翻译：气体敏感场效应晶体管可以由具有气体敏感层的衬底和分开处理的晶体管形成，然后组装。衬底可以被图案化以形成间隔物，通过该间隔物，晶体管和敏感层之间的气隙的高度可以相对精确地调节。可以通过使用材料去除技术对衬底进行图案化来实现间隔物的形成。间隔物的高度可以在气敏层的层厚度和使用CMOS工艺制造的晶体管中进行调整。用于在间隔件之间产生凹槽的合适技术包括例如抛光，切割，喷砂，光刻干蚀刻或湿法化学蚀刻。用于基材的合适材料可以包括例如玻璃，陶瓷，氧化铝，硅或尺寸稳定的聚合物。在准备衬底和晶体管之后，晶体管的两个元件例如使用倒装芯片方法或粘接技术连接。

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