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    • 5. 发明申请
    • Gas Sensor for Determining Ammonia
    • 气体传感器用于测定氨
    • US20080274559A1
    • 2008-11-06
    • US11629550
    • 2005-06-13
    • Maximilian FleischerHans MeixnerRoland PohleKerstin Wiesner
    • Maximilian FleischerHans MeixnerRoland PohleKerstin Wiesner
    • G01N27/00B01J19/00
    • G01N33/0054Y02A50/246Y10T436/175383
    • The invention relates to a gas sensor which is used to detect ammonia by detecting and evaluating conductivity variations on semi-conductive metal oxides, comprising: a substrate, a gas sensitive layer made of a semi-conductive metal oxide, a catalytic filter which is disposed in front of the metal oxide, said filter being used to convert ammonia, contained in the measuring gas, into a NO/NO2 mixture or to only NO2, measuring electrodes which are arranged on the surface of the substrate in order to detect conductivity variations in the semi-conductive metal oxide which is at least sensitive to NO/NO2, a controllable electric heating device which is used to adjust predetermined temperatures at least for the semi-conductive metal oxide, whereby the formed NO/NO2 can be guided to the metal oxide and the content of ammonia in the measuring gas can be determined from the NO/NO2-measurement by means of the semi-conductive metal oxide.
    • 本发明涉及一种用于通过检测和评估半导电金属氧化物的导电率变化来检测氨的气体传感器,包括:基板,由半导体金属氧化物制成的气敏层,设置在催化过滤器 在金属氧化物的前面,所述过滤器用于将包含在测量气体中的氨转化为NO / NO 2混合物或仅将NO2测量电极设置在衬底的表面上,以便检测电导率变化 至少对NO / NO2敏感的半导体金属氧化物,至少用于半导体金属氧化物调节预定温度的可控电加热装置,由此所形成的NO / NO 2可被引导到金属 氧化物,测定气体中的氨的含量可以通过半导体金属氧化物从NO / NO 2测定中求出。