专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06928723B2 Method for making a magnetoresistive sensor having a cobalt-ferrite pinning layer 失效
标题翻译：制造具有钴铁氧体钉扎层的磁阻传感器的方法
公开(公告)号：US06928723B2
公开(公告)日：2005-08-16
申请号：US10746021
申请日：2003-12-23
申请人： Matthew Joseph Carey , Hoa Van Do , Robin Frederick Charles Farrow , Bruce Alvin Gurney , David Thomas Margulies , Ronald Franklin Marks , Philip Milton Rice , Ren Xu
发明人： Matthew Joseph Carey , Hoa Van Do , Robin Frederick Charles Farrow , Bruce Alvin Gurney , David Thomas Margulies , Ronald Franklin Marks , Philip Milton Rice , Ren Xu
IPC分类号： G01R33/09 , G11B5/012 , G11B5/39 , H01F10/32 , H01F41/30 , G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/012 , G11B5/3932 , G11B5/3967 , H01F10/3268 , H01F41/302 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49071
摘要： An exchange-coupled magnetic structure of a cobalt-ferrite layer adjacent a magnetic metal layer is used in magnetorestive sensors, such as spin valves or tunnel junction valves. The exchange-coupled magnetic structure is used in a pinning structure pinning the magnetization of a ferromagnetic pinned layer, or in an AP pinned layer. A low coercivity ferrite may be used in an AP free layer. Cobalt-ferrite layers may be formed by co-sputtering of Co and Fe in an oxygen/argon gas mixture, or by sputtering of a CoFe2 composition target in an oxygen/argon gas mixture. Alternatively, the cobalt-ferrite layer may be formed by evaporation of Co and Fe from an alloy source or separate sources along with a flux of oxygen atoms from a RF oxygen atom beam source. Magnetoresistive sensors including cobalt-ferrite layers have small read gaps and produce large signals with high efficiency.
摘要翻译：邻近磁性金属层的钴铁氧体层的交换耦合磁性结构被用于诸如自旋阀或隧道结阀的磁力回转传感器中。交换耦合磁结构用于钉扎铁磁钉扎层或AP钉扎层的磁化的钉扎结构。低矫顽力铁氧体可用于AP自由层。钴 - 铁氧体层可以通过在氧/氩气混合物中共同溅射Co和Fe，或者通过在氧/氩气混合物中溅射CoFe 2 N 2组合物靶来形成。或者，钴 - 铁素体层可以通过从合金源蒸发Co和Fe以及来自RF氧原子束源的氧原子束的分离源来形成。包括钴 - 铁氧体层的磁阻传感器具有小的读取间隙，并产生高效率的大信号。

2. 发明授权

US06721144B2 Spin valves with co-ferrite pinning layer 有权
标题翻译：自旋阀与共铁氧体钉扎层
公开(公告)号：US06721144B2
公开(公告)日：2004-04-13
申请号：US09755556
申请日：2001-01-04
申请人： Matthew Joseph Carey , Hoa Van Do , Robin Frederick Charles Farrow , Bruce Alvin Gurney , David Thomas Margulies , Ronald Franklin Marks , Philip Milton Rice , Ren Xu
发明人： Matthew Joseph Carey , Hoa Van Do , Robin Frederick Charles Farrow , Bruce Alvin Gurney , David Thomas Margulies , Ronald Franklin Marks , Philip Milton Rice , Ren Xu
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/012 , G11B5/3932 , G11B5/3967 , H01F10/3268 , H01F41/302 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49071
摘要： An exchange-coupled magnetic structure of a cobalt-ferrite layer adjacent a magnetic metal layer is used in magnetorestive sensors, such as spin valves or tunnel junction valves. The exchange-coupled magnetic structure is used in a pinning structure pinning the magnetization of a ferromagnetic pinned layer, or in an AP pinned layer. A low coercivity ferrite may be used in an AP free layer. Cobalt-ferrite layers may be formed by co-sputtering of Co and Fe in an oxygen/argon gas mixture, or by sputtering of a CoFe2 composition target in an oxygen/argon gas mixture. Alternatively, the cobalt-ferrite layer may be formed by evaporation of Co and Fe from an alloy source or separate sources along with a flux of oxygen atoms from a RF oxygen atom beam source. Magnetoresistive sensors including cobalt-ferrite layers have small read gaps and produce large signals with high efficiency.
摘要翻译：邻近磁性金属层的钴铁氧体层的交换耦合磁性结构被用于诸如自旋阀或隧道结阀的磁力回转传感器中。交换耦合磁结构用于钉扎铁磁钉扎层或AP钉扎层的磁化的钉扎结构。低矫顽力铁氧体可用于AP自由层。钴 - 铁氧体层可以通过在氧/氩气混合物中共同溅射Co和Fe，或者通过在氧/氩气混合物中溅射CoFe 2组合物靶来形成。或者，钴 - 铁素体层可以通过从合金源蒸发Co和Fe以及来自RF氧原子束源的氧原子束的分离源来形成。包括钴 - 铁氧体层的磁阻传感器具有小的读取间隙，并产生高效率的大信号。

3. 发明授权

US07116532B2 Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems 失效
公开(公告)号：US07116532B2
公开(公告)日：2006-10-03
申请号：US10985195
申请日：2004-11-09
申请人： Matthew Joseph Carey , Eric Edward Fullerton , Bruce Alvin Gurney , Thai Le , Stefan Maat , Philip Milton Rice
发明人： Matthew Joseph Carey , Eric Edward Fullerton , Bruce Alvin Gurney , Thai Le , Stefan Maat , Philip Milton Rice
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/3967 , H01F10/3277
摘要： An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide underlayer, such as cobalt-oxide, in proximity to the coercive ferrite layer. The oxide underlayer has a lattice structure of either rock salt or a spinel and exhibits no magnetic moment at room temperature. The underlayer affects the structure of the coercive ferrite layer and therefore its magnetic properties, providing increased coercivity and enhanced thermal stability. As a result, the coercive ferrite layer is thermally stable at much smaller thicknesses than without the underlayer. The exchange-coupled structure is used in spin valve and magnetic tunnel junction magnetoresistive sensors in read heads of magnetic disk drive systems. Because the coercive ferrite layer can be made as thin as 1 nm while remaining thermally stable, the sensor satisfies the narrow gap requirements of high recording density systems.

4. 发明授权

US06836392B2 Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems 有权
标题翻译：用于交换耦合磁性结构的稳定性增强型底层，磁阻传感器和磁盘驱动系统
公开(公告)号：US06836392B2
公开(公告)日：2004-12-28
申请号：US09841942
申请日：2001-04-24
申请人： Matthew Joseph Carey , Eric Edward Fullerton , Bruce Alvin Gurney , Thai Le , Stefan Maat , Philip Milton Rice
发明人： Matthew Joseph Carey , Eric Edward Fullerton , Bruce Alvin Gurney , Thai Le , Stefan Maat , Philip Milton Rice
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/3967 , H01F10/3277
摘要： An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide underlayer, such as cobalt-oxide, in proximity to the coercive ferrite layer. The oxide underlayer has a lattice structure of either rock salt or a spinel and exhibits no magnetic moment at room temperature. The underlayer affects the structure of the coercive ferrite layer and therefore its magnetic properties, providing increased coercivity and enhanced thermal stability. As a result, the coercive ferrite layer is thermally stable at much smaller thicknesses than without the underlayer. The exchange-coupled structure is used in spin valve and magnetic tunnel junction magnetoresistive sensors in read heads of magnetic disk drive systems. Because the coercive ferrite layer can be made as thin as 1 nm while remaining thermally stable, the sensor satisfies the narrow gap requirements of high recording density systems.
摘要翻译：交换耦合磁性结构包括强磁性层，用于偏置铁磁性层的磁化的钴铁氧体的矫顽铁氧体层以及邻近矫顽铁氧体层的氧化钴底层，例如氧化钴。氧化物底层具有岩盐或尖晶石的晶格结构，并且在室温下不显示磁矩。底层影响矫顽铁氧体层的结构，因此影响其磁特性，提供增强的矫顽力和增强的热稳定性。结果，矫顽铁氧体层的热稳定性比没有底层要小得多的厚度。交换耦合结构用于磁盘驱动系统读磁头中的自旋阀和磁隧道结磁阻传感器。由于矫顽铁氧体层可以制成1nm的薄而保持热稳定性，所以传感器满足高记录密度系统的窄间隙要求。

5. 发明授权

US06992866B2 Exchange-coupled magnetoresistive sensor with a coercive ferrite layer and an oxide underlayer having a spinal lattice structure 失效
标题翻译：具有矫顽铁氧体层和具有脊椎晶格结构的氧化物底层的交换耦合磁阻传感器
公开(公告)号：US06992866B2
公开(公告)日：2006-01-31
申请号：US10931315
申请日：2004-08-31
申请人： Matthew Joseph Carey , Eric Edward Fullerton , Bruce Alvin Gurney , Thai Le , Stefan Maat , Philip Milton Rice
发明人： Matthew Joseph Carey , Eric Edward Fullerton , Bruce Alvin Gurney , Thai Le , Stefan Maat , Philip Milton Rice
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/3967 , H01F10/3277
摘要： An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide underlayer, such as cobalt-oxide, in proximity to the coercive ferrite layer. The oxide underlayer has a lattice structure of either rock salt or a spinel and exhibits no magnetic moment at room temperature. The underlayer affects the structure of the coercive ferrite layer and therefore its magnetic properties, providing increased coercivity and enhanced thermal stability. As a result, the coercive ferrite layer is thermally stable at much smaller thicknesses than without the underlayer. The exchange-coupled structure is used in spin valve and magnetic tunnel junction magnetoresistive sensors in read heads of magnetic disk drive systems. Because the coercive ferrite layer can be made as thin as 1 nm while remaining thermally stable, the sensor satisfies the narrow gap requirements of high recording density systems.
摘要翻译：交换耦合磁性结构包括强磁性层，用于偏置铁磁性层的磁化的钴铁氧体的矫顽铁氧体层以及邻近矫顽铁氧体层的氧化钴底层，例如氧化钴。氧化物底层具有岩盐或尖晶石的晶格结构，并且在室温下不显示磁矩。底层影响矫顽铁氧体层的结构，因此影响其磁特性，提供增强的矫顽力和增强的热稳定性。结果，矫顽铁氧体层的热稳定性比没有底层要小得多的厚度。交换耦合结构用于磁盘驱动系统读磁头中的自旋阀和磁隧道结磁阻传感器。由于矫顽铁氧体层可以制成1nm的薄而保持热稳定性，所以传感器满足高记录密度系统的窄间隙要求。

6. 发明授权

US06452761B1 Magneto-resistive and spin-valve sensor gap with reduced thickness and high thermal conductivity 失效
标题翻译：磁阻和自旋阀传感器间隙具有减小的厚度和高导热性
公开(公告)号：US06452761B1
公开(公告)日：2002-09-17
申请号：US09483087
申请日：2000-01-14
申请人： Matthew Joseph Carey , Jeffrey Robinson Childress , Robert Edward Fontana, Jr. , Bruce Alvin Gurney , Stuart Stephen Papworth-Parkin , Ren Xu
发明人： Matthew Joseph Carey , Jeffrey Robinson Childress , Robert Edward Fontana, Jr. , Bruce Alvin Gurney , Stuart Stephen Papworth-Parkin , Ren Xu
IPC分类号： G11B533
CPC分类号： B82Y10/00 , G11B5/3103 , G11B5/3106 , G11B5/3133 , G11B5/3903 , G11B5/40 , Y10T29/49043
摘要： The current invention provides for magnetic sensor devices with reduced gap thickness and improved thermal conductivity. Gap structures of the current invention are integrated in laminated Magneto-Resistive and Spin-Valve sensors used in magnetic data storage systems. The gap structures are produced by depositing metal layers and oxidizing portions of or all of the metal layers to form thin high quality oxidized metal dielectric separator layers. The oxidized metal layer provides for excellent electrical insulation of the sensor element and any remaining metallic portions of the metal layers provide a thermally conducting pathway to assist the dissipation of heat generated by the sensor element. Because of the combined qualities of electrical insulation and thermal conductivity, magnetic sensor devices of this invention can be made with thinner gap structures and operated at higher drive currents. Further, oxidized metal layers provide suitable surfaces to growing oxidized metal gap insulator layers of any thickness.
摘要翻译：本发明提供了具有减小的间隙厚度和改善的导热性的磁传感器装置。本发明的间隙结构集成在磁数据存储系统中使用的层压磁阻和旋转阀传感器中。通过沉积金属层和氧化金属层的全部或全部以形成薄的高质量的氧化金属介电隔离层来产生间隙结构。氧化的金属层提供传感器元件的优异的电绝缘性，并且金属层的任何剩余的金属部分提供导热通路，以帮助消散由传感器元件产生的热量。由于电绝缘和导热性的综合特性，本发明的磁传感器装置可以用较薄的间隙结构制成，并在较高的驱动电流下工作。此外，氧化的金属层为任何厚度的生长的氧化金属间隙绝缘体层提供合适的表面。

7. 发明授权

US06594100B2 Method for recording magnetic transitions on recording layer having antiferromagnetically coupled ferromagnetic films 失效
标题翻译：在具有反铁磁耦合铁磁膜的记录层上记录磁转变的方法
公开(公告)号：US06594100B2
公开(公告)日：2003-07-15
申请号：US09903959
申请日：2001-07-11
申请人： Matthew Joseph Carey , Eric Edward Fullerton , Bruce Alvin Gurney , Hal Jervis Rosen , Manfred Ernst Schabes
发明人： Matthew Joseph Carey , Eric Edward Fullerton , Bruce Alvin Gurney , Hal Jervis Rosen , Manfred Ernst Schabes
IPC分类号： G11B503
CPC分类号： C23C28/021 , C23C28/00 , C23C28/023 , C23C28/42 , G11B5/66
摘要： A method for writing data on a magnetic recording medium includes providing a magnetic recording layer having at least two ferromagnetic films antiferromagnetically coupled together across a nonferromagnetic spacer film, with one of the ferromagnetic films having a greater magnetic moment than the other. A positive write field is applied to a first region to align the moments of both ferromagnetic films with the positive field, and then a negative write field is applied to an adjacent region to align the moments of both ferromagnetic films with the negative field. When the medium is moved away from the write fields, the moment of the ferromagnetic film with the lesser moment in each region flips to be antiparallel to the moment of the other ferromagnetic film in its region. The result is that the adjacent regions become adjacent magnetized domains with the transition between the domains representative of the written data.
摘要翻译：一种在磁记录介质上写入数据的方法包括提供具有至少两个铁磁膜的磁记录层，所述至少两个铁磁膜在非铁磁隔离膜上反铁磁耦合在一起，其中一个铁磁膜具有比另一个更大的磁矩。将正写入场施加到第一区域以将两个铁磁膜的力矩与正场对准，然后将负写入场施加到相邻区域以将两个铁磁膜的力矩与负场对准。当介质从写入场移动时，每个区域中具有较小力矩的铁磁膜的力矩翻转成与其区域中的另一个铁磁膜的时刻反平行。结果是相邻区域变成相邻的磁化域，其中代表写入数据的域之间的转变。

8. 发明授权

US06542341B1 Magnetic sensors having an antiferromagnetic layer exchange-coupled to a free layer 失效
标题翻译：具有与自由层交换耦合的反铁磁层的磁性传感器
公开(公告)号：US06542341B1
公开(公告)日：2003-04-01
申请号：US09443039
申请日：1999-11-18
申请人： Matthew Joseph Carey , Jeffrey Robinson Childress , Bruce Alvin Gurney
发明人： Matthew Joseph Carey , Jeffrey Robinson Childress , Bruce Alvin Gurney
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996
摘要： A magnetic sensor which detects an external magnetic field with the aid of a ferromagnetic free layer having a magnetic moment responsive to the external magnetic field. The magnetic sensor has an antiferromagnetic layer which is magnetically exchange-coupled to the free layer to produce an exchange bias field He which acts on the free layer to bias its magnetic moment along a certain orientation such as the transverse direction. The additional exchange bias field He is used in balancing a total transverse internal magnetic field Ht which is due to other fields generated by the sensor itself. The value of exchange bias field He is set, e.g., by selecting a certain thickness and a certain composition of the antiferromagnetic layer. The magnetic sensor of the invention can also have a non-magnetic spacer layer interposed between the free layer and the antiferromagnetic layer or be in contact with the free layer. The sensor can be a spin valve sensor, a tunnel valve sensor, or any magnetic sensor using the free layer and the magnetoresistive effect to detect the external magnetic field.
摘要翻译：借助于具有响应于外部磁场的磁矩的铁磁自由层来检测外部磁场的磁传感器。磁传感器具有反铁磁层，其与自由层磁交换耦合，以产生交替偏置场He，其作用于自由层以沿着诸如横向方向的某个取向偏置其磁矩。额外的交换偏置场He用于平衡由传感器本身产生的其他场产生的总横向内部磁场Ht。交换偏置场He的值例如通过选择反铁磁性层的一定厚度和一定的组成来设定。本发明的磁传感器还可以具有介于自由层和反铁磁性层之间或与自由层接触的非磁性间隔层。传感器可以是自旋阀传感器，隧道阀传感器或使用自由层的磁传感器和磁阻效应来检测外部磁场。

9. 发明授权

US06280813B1 Magnetic recording media with antiferromagnetically coupled ferromagnetic films as the recording layer 有权
标题翻译：具有反铁磁耦合铁磁膜的磁记录介质作为记录层
公开(公告)号：US06280813B1
公开(公告)日：2001-08-28
申请号：US09416364
申请日：1999-10-08
申请人： Matthew Joseph Carey , Eric Edward Fullerton , Bruce Alvin Gurney , Hal Jervis Rosen , Manfred Ernst Schabes
发明人： Matthew Joseph Carey , Eric Edward Fullerton , Bruce Alvin Gurney , Hal Jervis Rosen , Manfred Ernst Schabes
IPC分类号： B32B302
CPC分类号： C23C28/021 , C23C28/00 , C23C28/023 , C23C28/42 , G11B5/66
摘要： A magnetic recording medium for data storage uses a magnetic recording layer having at least two ferromagnetic films antiferromagnetically coupled together across a nonferromagnetic spacer film. The magnetic moments of the two antiferromagnetically-coupled films are oriented antiparallel, and thus the net remanent magnetization-thickness product (Mrt) of the recording layer is the difference in the Mrt values of the two ferromagnetic films. This reduction in Mrt is accomplished without a reduction in the thermal stability of the recording medium because the volumes of the grains in the antiferromagnetically-coupled films add constructively. In a magnetic recording rigid disk application, the magnetic layer comprises two ferromagnetic films, each a granular film of a sputter deposited CoPtCrB alloy, separated by a Ru spacer film having a thickness to maximize the antiferromagnetic exchange coupling between the two CoPtCrB films. One of the ferromagnetic films is made thicker than the other, but the thicknesses are chosen so that the net moment in zero applied magnetic field is low, but nonzero.
摘要翻译：用于数据存储的磁记录介质使用具有至少两个铁磁膜的磁记录层，其通过非铁磁间隔膜反铁磁耦合在一起。两个反铁磁耦合薄膜的磁矩定向反平行，因此记录层的净残磁强度 - 厚度积（Mrt）是两个铁磁膜的Mrt值之差。由于反铁磁耦合膜中的晶粒的体积增加，所以Mrt的这种减少是在记录介质的热稳定性降低的情况下完成的。在磁记录刚性盘应用中，磁性层包括两个铁磁膜，每个是由溅射沉积的CoPtCrB合金的粒状膜，由具有厚度的Ru隔离膜隔开，以使两个CoPtCrB膜之间的反铁磁交换耦合最大化。其中一个铁磁膜比另一个更厚，但是选择厚度使得零施加磁场的净力矩低，但非零。

10. 发明授权

US06548186B1 High resistivity films for AP layers in spin valves 失效
标题翻译：自旋阀中AP层的高电阻率膜
公开(公告)号：US06548186B1
公开(公告)日：2003-04-15
申请号：US09574301
申请日：2000-05-19
申请人： Matthew Joseph Carey , Bruce Alvin Gurney , Robert John Wilson
发明人： Matthew Joseph Carey , Bruce Alvin Gurney , Robert John Wilson
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B32B15/01 , B82Y10/00 , G11B5/3903 , H01F10/3268 , Y10T428/1171 , Y10T428/12465 , Y10T428/12861 , Y10T428/12937 , Y10T428/12986
摘要： In a spin valve, at least one AP pinned sublayer and/or one AP free sublayer comprise high resistivity alloys of the type AB, wherein A is selected from the group consisting of CoFe, NiFe, and CoFeNi, and B is selected from the group consisting of B, Ta, Nb, Zr, and/or Hf. The resistivity value of the highly resistive layer is typically between about 30 &mgr;&OHgr;-cm and 100 &mgr;&OHgr;-cm. The highly resistive layers reduce the shunting of the sense current away from the rest of the structure, and prevent electrons from being shunted away from the active region of the spin valve and, thus, reducing &Dgr;R/R. The spin valve of this layered structure can increase the overall sheet resistance and optimize the &Dgr;R/R value of the spin valve.
摘要翻译：在自旋阀中，至少一个AP钉扎子层和/或一个AP自由子层包括AB型的高电阻率合金，其中A选自CoFe，NiFe和CoFeNi，B选自由B，Ta，Nb，Zr和/或Hf组成。高电阻层的电阻率值通常在约30μOMEGA-cm和100μOMEGA-cm之间。高电阻层减少了感测电流与结构的其余部分的分流，并且防止电子被分流离开自旋阀的有源区域，从而减少DELTAR / R。这种分层结构的自旋阀可以增加整体薄层电阻并优化自旋阀的DELTAR / R值。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式